VR61F1 Search Results
VR61F1 Datasheets (2)
Part | ECAD Model | Manufacturer | Description | Datasheet Type | PDF Size | Page count | |
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VR61F1 | Shindengen Electric | Varistor | Original | 285.83KB | 6 | ||
VR-61F1 | Shindengen Electric | Surge Protectors - Varistors (Surface Mount) | Original | 193.47KB | 6 |
VR61F1 Price and Stock
Shindengen Electronic Manufacturing Co Ltd VR-61F1-5053Varistors Varistor |
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VR-61F1-5053 |
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Shindengen Electronic Manufacturing Co Ltd VR-61F1-5103SCRs Surge Absorber Varistor |
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VR-61F1-5103 |
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Shindengen Electronic Manufacturing Co Ltd VR-61F1-5073Varistors Varistor SMD |
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VR-61F1-5073 |
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VR61F1 Datasheets Context Search
Catalog Datasheet | Type | Document Tags | |
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VR61F1
Abstract: VR-61F1
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Original |
VR61F1 100kHz, Ratings10 VR-61F1 VR61F1 VR-61F1 | |
VR61F1
Abstract: VR-61F1 shindengen 1F
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Original |
VR61F1 10/200s, 10/1000s, 100kHz, VR-61F1 VR61F1 VR-61F1 shindengen 1F | |
Contextual Info: TRANKILLER SMD OUTLINE DIMENSIONS VR61F1 • RATINGS Absolute Maximum Ratings Item Symbol Conditions Ratings Units Storage Temperature Tstg -5 5 -1 5 0 •c Junction Temperature Tj 150 -c Ta=25°C Average Rectified Forward Current Io tm ftw 50Hz Peak Surge |
OCR Scan |
VR61F1 S050m 100kH 0DDS001 | |
VR61F1
Abstract: SMD Transistor 1f Substrate alumina VR-61F1
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Original |
VR61F1 10/200s, 10/1000s, 100kHz, VR-61F1 VR61F1 SMD Transistor 1f Substrate alumina VR-61F1 | |
7555-T
Abstract: M1FM3
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Original |
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VR-61BContextual Info: Surge Absorbers Varistors [Features] 1. Bi-directional surge absorption is possible. 2. Low junction capacitance 3. SMD is available. VR-61F1. VRYA6, 15 [Applications} 1. Telephone set surge absorption 2. Digital communications circuit surge absorption 3. ISDN terminal surge absorption |
OCR Scan |
VR-61F1. VR-61FV' VRYA152 STQ2D-170F2 ST03-58F1 ST04-16F1 ST04-27F1 ST50V-27F ST70-27F DL04-18F1© VR-61B | |
st03dContextual Info: Surge Absorbers Varistors [Features 1. Bidirectional surge absorption is possible. 2. Low junction capacitance 3. SMD is available. VR-61F1, VRYA6, 15) [Applications) 1. Telephone set surge absorption 2. Digital communications circuit surge absorption 3. ISDN terminal surge absorption |
OCR Scan |
VR-61F1, VR-60B -60BP ST04-16 ST03-58F1 ST04-16F1 -27F1 ST50V-27F ST70-27F ST02D-82 st03d | |
D1FS4N
Abstract: G1VL8 KP4F12 D3FJ10 KL3Z18 K1VP24 1000cy DL04-18F1 KU4F8 smd 1f
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Original |
84-119e yetking125, 24h85, 30minRT 30min 100cycles 1000h D1FS4N G1VL8 KP4F12 D3FJ10 KL3Z18 K1VP24 1000cy DL04-18F1 KU4F8 smd 1f | |
4311 mosfet transistor
Abstract: 2SK2068 2sc 1027 transistor 4-071 transistor 2SK2067 S2VC 4102 transistor s2ld s4vb bridge rectifier 4072
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OCR Scan |
2SC3164 VR61F1 MA1000 MA2000 4311 mosfet transistor 2SK2068 2sc 1027 transistor 4-071 transistor 2SK2067 S2VC 4102 transistor s2ld s4vb bridge rectifier 4072 | |
Shindengen catalog
Abstract: U181
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Original |
VR-61F1 T125unless Shindengen catalog U181 | |
VD F1 SMD
Abstract: f1 smd marking U181 VR-61F1 smd marking F1 VR61F1
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Original |
VR-61F1 T125unless VD F1 SMD f1 smd marking U181 VR-61F1 smd marking F1 VR61F1 | |
3SBA60
Abstract: D20VT80 TH3J10 TK3L10Z TH3L20 TH3L10 TH3L10 Z D20VT60 a2430 10SC4M
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OCR Scan |
2SC4585 2SC4663 2SC4664 2SC4668 2SK1392 2SK1393 2SK1394 2SK1395 2SK1396 3SBA60 D20VT80 TH3J10 TK3L10Z TH3L20 TH3L10 TH3L10 Z D20VT60 a2430 10SC4M | |
KP4N12Contextual Info: S u r fa c e - M o u n t D e v i c e s Power M O S F E T N-Channel, Enhancement type Parts No. EIAJ No. ☆ ☆ ☆ ☆ ☆ ☆ ☆ ☆ 2SK1861 1931 1194 1195 1672 1533 2062 2063 2064 2065 2005 2006 Electrical Characteristics Absolute Maximum Ratings R s d on |
OCR Scan |
2SK1861 STO-220 KP4L07 KP4N12 KP4R25 KP10L07 KP10N12 KP10R25 KP15L07 KP15N12 | |
Contextual Info: SMD Varistor OUTLINE DIMENSIONS VR-61F1 2.0 1.5 ±0.2 F1 1N 2.5 ±0.3 Package : 1F ロット記号(例) 品名 クラス(略号) 2.0 4.2 ソルダリングパッドの参考パターン 1.2 ±0.3 1.2 ±0.3 0.1±0.1 2.0 ±0.3 0.2 0.9 5.0 ±0.3 単位:mm |
Original |
VR-61F1 100kHz 50mVrms |