VTE1261W Search Results

Contextual Info: V SbE 3a3übOS 000122G GaAIAs Infrared Emitting Diodes VTE1261W, 1262W T-1 3/4 Plastic Package - 880 nm E G & G 7 22 H I V C T T -m VACTE C -i3 PACKAGE DIMENSIONS inch mm 1.00 ( 2 5 .4 ) .2 2 0 ( 5 .5 9 ) •OSO ( 1 .2 7 ) .2 6 (6 .6 ) .0 9 (2 .3 ) .0 3 0 ( 0 .7 6 ) "

VTE1261W

Abstract: VTE1262W
Contextual Info: 5bE D 3030b[n Q001220 GaAIAs Infrared Emitting Diodes 752 • VCT VTE1261W , 1262W T-1 3/4 Plastic Package — 880 nm T - M I -I3 E G & G VACTEC PACKAGE DIMENSIONS inch mm ■OSO ( 1 . 2 7 ) 1 .0 0 ( 2 5 . 4 ) .2 4 0 ( 6 .J 0 ) M INIM UM .2 2 0 ( 5 .5 9 )

Contextual Info: L E D -2 HIGH POWER GaAIAs INFRARED EMITTING DIODES 880 nm VACTEC OPTOELECTRONICS 10900 P AG E BLVD. ST. LO U IS, MO. 63132 U SA PHONE 314-423-4900 TW X 910-764-0811 FEATURES: P R O D U C T DESCRIPTION: •Nine standard packages in herm etic and low-cost epoxy

H0A0872-n55

Abstract: H0A1405-1 H0A0865-L51 h0a1405 HOA708-1 HOA9 til78 phototransistor MOC70T3 ir diode TIL38 H0A1874-12
Contextual Info: Cross Reference Cross Reference Competition P/N Honeywell P/N Code Description Competition P/N 100 H0A0871-N55 B TRANS ASSY. PTX 5082-4205 CALL PHOTODIODES. P P P IN 101 H0A1872-12 BC TRANS ASSY. PTX 5082-4207 CALL PHOTODIODES. T018 TALL PIN 10501 H0A1872-1

VTE3171L

Abstract: T018 VTE1062 VTE1162 VTE1261 VTE1261W VTE3171
Contextual Info: This Material L E D -2 Copyrighted HIGH POWER GaAIAs INFRARED EMITTING DIODES 880 nm J^ E G & G V A C T E C OPTOELECTRONICS By 10900 PAGE BLVD. ST. LOUIS, MO. 63132 USA PHONE 314-423-4900 TWX 910-764-0811 Its Respective FEATU R ES: P R O D U C T D E S C R IP T IO N :