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Catalog Datasheet	MFG & Type	PDF	Document Tags
dual mosfet so8 ic Abstract: No abstract text available Text: GF4936 Dual N-Channel Enhancement-Mode MOSFET i Vds30V R d S ON 37mQ Id 5 .8 A # D1 D1 D2 D2 Mechanical Data_ Features_ Case: SO-8 molded plastic body •Advanced Trench Process Technology Terminals: Leads solderable per MIL-STD-750,	OCR Scan	PDF	GF4936 Vds30V MIL-STD-750, 25CTC/10 dual mosfet so8 ic
RCS035L03 Abstract: rcs035 TSQ0308G-RCS035L03 TSQ03080-RCS035L03 TSZ22111-03 TSZ2211104 Text: PRODUCTS S0P8 TYPE PAGE RCS035L03 1.TYPE RCS035L03 2.STRUCTURE SILICON N-CHANNEL MOS FET 3.APPLICATIONS SWITCHING 1/3 4.ABSOLUTE MAXIMUM RATINGS [Ta=25lC] « IT IS THE SAME RATINGS FOR THE Tri AND Tr2. } DRAIN-SOURCE VOLTAGE VDSS 30V GATE-SOURCE VOLTAGE V GSS	OCR Scan	PDF	RCS035L03 25/JUL/2002 TSQ03080-RCS035L03 TSZ2211104 RCS035LÃ TSZ2211Ã RCS035L03 rcs035 TSQ0308G-RCS035L03 TSQ03080-RCS035L03 TSZ22111-03 TSZ2211104
Untitled Abstract: No abstract text available Text: TOSHIBA FIELD EFFECT TRANSISTOR 2SK1530 SILICON N CHANNEL MOS TYPE HIGH POWER AM PL IF IE R AP PL IC AT IO N Unit in mm . High Breakdown Voltage 20.5MAX : Vd ss 200V MIN. ff 3.3 ±0.2 . High Forward Transfer Admittance : \|Yfs \| 5.0S(TYP.) . Complementary to 2SJ201	OCR Scan	PDF	2SK1530 2SJ201 Tc-25
c 111 transistor Abstract: No abstract text available Text: TOSHIBA FIELD EFFECT TRANSISTOR 2SK1529 SILICON N CHANNEL MOS TYPE HIGH POWER AMPLIFIER APPLICATION Unit in mm 15.9MAX . High Breakdown Voltage 03.2±O.2 : Vj ss“180V MIN.) 7 . High Forward Transfer Admittance : \| Yfs \| “4.OS (TYP.) . Complementary to 2SJ200	OCR Scan	PDF	2SK1529 2SJ200 Ta-25 Tcm25 SC-65 2-16C1B c 111 transistor