XR1006 Search Results

Contextual Info: XR1006CN Linear ICs Active Low-pass Filter status Military/High-RelN Tech.CMOS Filter TypeChebychev Nominal Clock Frequency Hz 1.5M f(cutoff) Maximum (Hz)40k Cutoff Freq (Min. Hz) Nom. Neg Supp5.0 Nom. Pos. Supp5.0 Minimum Operating Temp (øC)0 Maximum Operating Temp (øC)70

Contextual Info: XR1006CP Linear ICs Active Low-pass Filter status Military/High-RelN Tech.CMOS Filter TypeChebychev Nominal Clock Frequency Hz 1.5M f(cutoff) Maximum (Hz)40k Cutoff Freq (Min. Hz) Nom. Neg Supp5.0 Nom. Pos. Supp5.0 Minimum Operating Temp (øC)0 Maximum Operating Temp (øC)70

Contextual Info: XR1006D Linear ICs Active Low-pass Filter status Military/High-RelN Tech.CMOS Filter TypeChebychev Nominal Clock Frequency Hz 1.5M f(cutoff) Maximum (Hz)40k Cutoff Freq (Min. Hz) Nom. Neg Supp5.0 Nom. Pos. Supp5.0 Minimum Operating Temp (øC)0 Maximum Operating Temp (øC)70

XF1006C

Contextual Info: D im e n s io n s : S c U e m a tic : — 0.01 8 ± 0 . 0 0 2 0 .1 0 0 TYP MAX ? W V PRIMARY I— o OCONDARY o CT 0 .2 8 5 MAX Y XR1006C -2S • YYWW 5 o o o 3 XFMRS 2 1 o 0 .2 5 0 K) O 4 „ Y. E le c tric a @ 25°C 0 .2 0 0 IS O L A T IO N : 0 .3 3 0 Max

ghz hybrid coupler

Abstract: broadband usb MSRX-1823 block diagram for RF RECEIVER "RF Switch" WR42 XR1006 hybrid coupler microwave transceiver 3.5 GHz MSTX-1823
Contextual Info: GaAs MMIC Receiver - NEW MSRX-1823 June 2005 - Rev 01-Jun-05 General Description The MSRX-1823 is a low cost, highly integrated MMIC-based receiver, suitable for use in the 18 GHz and 23 GHz microwave radio bands. The receiver design is based on one MMIC chip from Mimix Broadband, the XR1006 receiver. Features in the MMIC are low

1006CP

Contextual Info: XR-1001/8 P R E LIM IN A R Y General Purpose Low Pass Filter G E N E R A L DESCRIPTION FU N CT IO N AL B LO CK D IAG RAM Each of these devices in the series is a fourth order switched capacitor low pass filter providing 24 dB/octave {Butterworth of roll off outside of the pass band. W ithin this

6 pin 2D 1002

Abstract: 2d 1002 6 pin XR1002CP AX2002 XR1006CP XR-1008 Pin-for-Pin Compatible with the chebyshev 0.5dB AX-19 1002cp
Contextual Info: XR-1001/8 General Purpose Low Pass Filter PIN ASSIGNMENT GENERAL DESCRIPTION Each of these devices in the series is a fourth order switched capacitor low pass filter providing 24dB/octave Butterworth of roll off outside of the pass band, Within this series, Butterworth, Bessel or Chebyshev (0.5 or

qpsk modulation transmitter ghz

Abstract: rf module with qpsk modulation 23GHz transceiver microwave radio transmitter MSRX-1823 XP1013-BD XR1006-BD XU1002-BD ghz hybrid coupler waveguide Transceiver 20 GHz
Contextual Info: Application of the 18/23 GHz Transceiver Modules The 18/23GHz Transceiver Transmitter/Receiver pair has been designed specifically for use in saturated or linear point-topoint microwave radios operating in the 18 GHz and 23 GHz ETSI band plans. The design is well suited for PDH radios

XR1006-BD

Abstract: DM6030HK TS3332LD XR1006 XR1006-BD-000V XR1006-BD-EV1
Contextual Info: 18.0-25.0 GHz GaAs MMIC Receiver August 2007 - Rev 13-Aug-07 Features Chip Device Layout R1006-BD Sub-harmonic Receiver Integrated LNA, LO Buffer, Image Reject Mixer +2.0 dBm LO Drive Level 2.5 dB Noise Figure 15.0 dB Image Rejection 100% On-Wafer RF, DC and Noise Figure Testing

R1006 transistor

Abstract: transistor R1006 r1006 R1006 diode 84-1LMI XR1006
Contextual Info: 18.0-25.0 GHz GaAs MMIC Receiver R1006 May 2005 - Rev 13-May-05 Features Chip Device Layout Sub-harmonic Receiver Integrated LNA, LO Buffer, Image Reject Mixer +2.0 dBm LO Drive Level 2.5 dB Noise Figure 15.0 dB Image Rejection 100% On-Wafer RF, DC and Noise Figure Testing

R1006 transistor

Abstract: transistor R1006 R1006 QFN 7X7 receiver QAM schematic diagram XR1006-QD
Contextual Info: 17.0-25.0 GHz GaAs Receiver QFN, 7x7 mm R1006-QD August 2007 - Rev 30-Aug-07 Features Sub-harmonic Receiver Integrated LNA, LO Buffer, Image Reject Mixer 7x7 mm, QFN +2.0 dBm LO Drive Level 2.5 dB Noise Figure 20.0 dB Image Rejection 100% On-Wafer RF, DC and Noise Figure Testing

R1006 transistor

Abstract: transistor R1006 BPF 1608
Contextual Info: 18.0-25.0 GHz GaAs MMIC Receiver R1006 May 2005 - Rev 13-May-05 Features Chip Device Layout Sub-harmonic Receiver Integrated LNA, LO Buffer, Image Reject Mixer +2.0 dBm LO Drive Level 2.5 dB Noise Figure 15.0 dB Image Rejection 100% On-Wafer RF, DC and Noise Figure Testing

Contextual Info: 17.0-25.0 GHz GaAs Receiver QFN, 7x7 mm R1006-QD November 2006 - Rev 10-Nov-06 Features Sub-harmonic Receiver Integrated LNA, LO Buffer, Image Reject Mixer 7x7 mm, QFN +2.0 dBm LO Drive Level 2.5 dB Noise Figure 20.0 dB Image Rejection 100% On-Wafer RF, DC and Noise Figure Testing

transistor R1006

Abstract: XR1006-QD
Contextual Info: 17.0-25.0 GHz GaAs Receiver QFN, 7x7 mm R1006-QD February 2007 - Rev 16-Feb-07 Features Sub-harmonic Receiver Integrated LNA, LO Buffer, Image Reject Mixer 7x7 mm, QFN +2.0 dBm LO Drive Level 2.5 dB Noise Figure 20.0 dB Image Rejection 100% On-Wafer RF, DC and Noise Figure Testing

xg1015-SE

Abstract: XB1013-qt CMM6001-BD CFP0103-SP CMM6004-BD XZ1003-QT XU1016 QH XP1073-BD XD1008-QH XP1035-BD
Contextual Info: Sales Contact Information NORTH AMERICA COLORADO, UTAH USA ALABAMA, FLORIDA, GEORGIA, MISSISSIPPI, NORTH CAROLINA, SOUTH CAROLINA,TENNESSEE, Electronic Marketing Associates EMA 919-847-8800 rdenny@emarep.com Alabama Office 256-880-8050 djones@emarep.com

r1006

Abstract: R1006 transistor rf 4*4 mm QFN transistor R1006 XR1006-QD
Contextual Info: 17.0-25.0 GHz GaAs Receiver QFN, 7x7 mm R1006-QD July 2008 - Rev 14-Jul-08 Features Sub-harmonic Receiver Integrated LNA, LO Buffer, Image Reject Mixer 7x7 mm, QFN +2.0 dBm LO Drive Level 2.5 dB Noise Figure 20.0 dB Image Rejection 100% On-Wafer RF, DC and Noise Figure Testing

AX995

Abstract: chebyshev 0.5dB yb27 yb20 mf4-100 XR-1003C
Contextual Info: XR-1001/8 General Purpose Low Pass Filter PIN ASSIGNMENT GENERAL DESCRIPTION Each of these devices in the series is a fourth order switched capacitor low pass filter providing 24dB/octave Butterworth of roll off outside of the pass band, Within this series, Butterworth, Bessel or Chebyshev (0.5 or

DM6030HK

Abstract: TS3332LD XR1006 XR1006-BD XR1006-BD-000V XR1006-BD-EV1
Contextual Info: 18.0-25.0 GHz GaAs MMIC Receiver August 2007 - Rev 13-Aug-07 Features Chip Device Layout R1006-BD Sub-harmonic Receiver Integrated LNA, LO Buffer, Image Reject Mixer +2.0 dBm LO Drive Level 2.5 dB Noise Figure 15.0 dB Image Rejection 100% On-Wafer RF, DC and Noise Figure Testing