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    A 1046 TRANSISTOR Search Results

    A 1046 TRANSISTOR Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    BLF1046 Rochester Electronics LLC BLF1046 - UHF Power LDMOS Transistor (Ampleon Die) Visit Rochester Electronics LLC Buy
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation

    A 1046 TRANSISTOR Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    2SB919

    Abstract: 2SD123
    Text: Ordering number:1046B PNP/NPN Epitaxial Planar Silicon Transistors 2SB919/2SD1235 30V/8A High-Speed Switching Applications Applications Package Dimensions • Large current switching of relay drivers, high-speed inverters, converters. unit:mm 2010C [2SB919/2SD1235]


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    PDF 1046B 2SB919/2SD1235 2010C 2SB919/2SD1235] O-220AB SC-46 2SB919 2SB919 2SD123

    2SB919

    Abstract: 2SD1235 2SD123
    Text: Ordering number:ENN1046B PNP/NPN Epitaxial Planar Silicon Transistors 2SB919/2SD1235 30V/8A High-Speed Switching Applications Applications Package Dimensions • Large current switching of relay drivers, high-speed inverters, converters. unit:mm 2010C [2SB919/2SD1235]


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    PDF ENN1046B 2SB919/2SD1235 2010C 2SB919/2SD1235] O-220AB 2SB919 2SB919 2SD1235 2SD123

    Maxim date code DS2431

    Abstract: 1046 cmos esd sensitivity JESD22-A114
    Text: 8/26/2011 PRODUCT RELIABILITY REPORT FOR DS2431, Rev C2 Maxim Integrated Products 4401 South Beltwood Parkway Dallas, TX 75244-3292 Prepared by: Don Lipps Manager, Reliability Engineering Maxim Integrated Products 4401 South Beltwood Pkwy. Dallas, TX 75244-3292


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    PDF DS2431, maxim77 WJ945484A WJ046370D DSQ3301-K04+ WW156001E DS2431 ZJ163079AC DS24B33 Maxim date code DS2431 1046 cmos esd sensitivity JESD22-A114

    SILICON TRANSISTOR CORP

    Abstract: No abstract text available
    Text: ShE ]> SILICON TRANSISTOR CORP • B254022 □□00fl‘i2 20b « S T C SILICON TRANSISTOR CORPORATION ^ ^ Katrina Road Chelmsford, Massachusetts 01824 Telephone: 508-256-3321 FAX: 508-250-1046 A POWERHOUSE 500 Volts 0.5 Ohms TECHNICAL DATA SHEET ABSOLUTE MAXIMUM RATINGS


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    PDF B254022 SNF20505 ST102 MIL-S-19500 SILICON TRANSISTOR CORP

    SILICON TRANSISTOR CORP

    Abstract: No abstract text available
    Text: SILICON TRANSISTOR CORP Ô254GE2 G Q G O ' m SbE D TbT « S T C SILICON TRANSISTOR CORPORATION Katrina Road Chelmsford, Massachusetts 01824 Telephone: 508-256-3321 FAX: 508-250-1046 A POWERHOUSE 200 VOLTS 0.11 OHMS QUAD N CHANNEL POWER MOSFET DEVICE TYPE STQ202


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    PDF 254GE2 STQ202 ST102 MIL-S-19500 SILICON TRANSISTOR CORP

    Silicon Transistor Corp

    Abstract: 2950 transistor
    Text: SILICON TRANSISTOR CORP SbE J> WM Ô2S4022 DOGG^fi fll? « S T C SILICON TRANSISTOR CORPORATION I Katrina Road Chelmsford, Massachusetts 01824 Telephone: 508-256-3321 FAX: 508-250-1046 A POWERHOUSE 500 V o lts 0.3 Ohms TECHNICAL DATA SHEET ABSOLUTE MAXIMUM RATINGS


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    PDF 2S4022 SNF40503 BreM0-078 ST102 MIL-S-19500 Silicon Transistor Corp 2950 transistor

    406j transistor

    Abstract: 2N6277 stc TO-59 Package 2n6341 stc 2N6277 JANTX 2N3418 NPN 25 Amps POWER TRANSISTOR to63 2N6277 JANTXV 2n5685 stc 2N3846
    Text: 27 Katrina Road Chelmsford, MA 01824 Tel: 978 256-3321 Fax: (978)250-1046 Web: www.stcsemi.com A PO W ERHO USE STC is one o f few remaining manufacturers o f NPN and PNP power transistors and Darlingtons. We maintain QML status on over 135 bipolar power transistor and


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    PDF 14-PtN 406j transistor 2N6277 stc TO-59 Package 2n6341 stc 2N6277 JANTX 2N3418 NPN 25 Amps POWER TRANSISTOR to63 2N6277 JANTXV 2n5685 stc 2N3846

    ST102

    Abstract: LS38 Y-H8 846 transistor
    Text: SILICON TRANSI STOR CORP SbE D 0254022 OOOQ^TQ 31N « S T C SILICON TRANSISTOR CORPORATION Katrina Road Chelmsford, Massachusetts 01824 Telephone: 508-256-3321 FAX: 508-250-1046 A POWERHOUSE 400 VOLTS 0.33 OHMS QUAD N CHANNEL POWER MOSFET DEVICE TYPE STQ402


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    PDF STQ402 ST102 MIL-S-19500 ST102 LS38 Y-H8 846 transistor

    LS29

    Abstract: TRANSISTOR mosfet
    Text: SILICON TRANSISTOR CORP Ô2S4G25 St.E D DGDG'ì'ìb Ô3 2 « S T C \ 'Z ° \ 'Z n SILICON TRANSISTOh CORPORATION Katrina Road Chelmsford, Massachusetts 01824 Telephone: 508-256-3321 FAX: 508-250-1046 A POWERHOUSE 100 VOLTS 075 OHMS QUAD N CHANNEL POWER MOSFET


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    PDF 2S4G25 STQ102 ST102 MIL-S-19500 LS29 TRANSISTOR mosfet

    SILICON TRANSISTOR CORP

    Abstract: No abstract text available
    Text: SILICON TRANSISTOR CORP fl2S4D22 □□□□‘ìflb <^3 « S T C 5bE D T -3 W S SILICON TRANSISTOR CORPORATION Katrina Road Chelmsford, Massachusetts 01824 Telephone: 508-256-3321 FAX: 508-250-1046 A POWERHOUSE 400 Volts 0.9 Ohms TECHNICAL DATA SHEET ABSOLUTE MAXIMUM RATINGS


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    PDF fl2S4D22 SNF40409 O-258 ST102 MIL-S-19500 SILICON TRANSISTOR CORP

    SILICON TRANSISTOR CORP

    Abstract: h a 431 transistor
    Text: SILICON TRANSISTOR CORP SbE J • 8 as „ü52 0 0 D 0 , „ 01Q M S T C SILICON TRANSISTOR CORPORATION { Katrina Road Chelmsford, Massachusetts 01824 Telephone: 508-256-3321 fax: 508-250-1046 . A POWERHOUSE 400 Volts 0.4 Ohms TECHNICAL DATA SHEET ABSOLUTE MAXIMUM RATINGS


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    PDF SNF40404 ST102 MIL-S-19500 SILICON TRANSISTOR CORP h a 431 transistor

    ST102

    Abstract: No abstract text available
    Text: S I L I CO N T R A N S I S T O R CORP A 2 5 4 G 2 2 OOODTfiG 475 * S T C SbE D SILICON “P S * A S TRANSISTOR CORPORATION Katrina Road Chelmsford, Massachusetts 01824 Telephone: 508-256-3321 FAX: 508-250-1046 A POWERHOUSE 400 Volts 0.3 Ohms TECHNICAL DATA SHEET


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    PDF F40403 M0-078 ST102 MIL-S-19500

    Untitled

    Abstract: No abstract text available
    Text: S I LI CO N T R A N S I S T O R CORP fl2S4D22 OOOOfififi BBS « S T C SbE D SILICON TRANSISTOR CORPORATION I '3 ° M 2 > Katrina Road Chelmsford, Massachusetts 01824 Telephone: 508-256-3321 FAX: 508-250-1046 A POWERHOUSE 400 Volts 0.4 Ohms TECHNICAL DATA SHEET


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    PDF fl2S4D22 SNF20404 ST102 MIL-S-19500

    406J

    Abstract: 10-32 UNF 2 A
    Text: 27 Katrina Road Chelmsford, MA 01824 Tel: 978 256-3321 Fax: (978)250-1046 Web: www.stcsemi.com A POW ERH O USE BipslarPow er Transistors ' C E (S A T ) hpE Package TO -5/TO -39 ia 1r Notes: Part Number 2N3867, S (1) 2N3868, S (1) Bvceo Ic ( v o lt s ) ( am D S )


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    PDF 2N3867, 2N3868, 14-PtN 406J 10-32 UNF 2 A

    406J

    Abstract: JD 1801 irfc230 IRFC430 IRFC9230 IRFC130 2N6756 IRFC110 2N6847 irfc250
    Text: 27 Katrina Road Chelmsford, MA 01824 Tel: 978 256-3321 Fax: (978)250-1046 Web: www.stcsemi.com A POW ERHO USE All devices are available screened to TX, TXV, or S Level equivalent. Reference the High-Reliability Screening table for details. Contact your local Representative or STC


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    PDF 2N6756 2N6758 2N6760 2N6762 2N6768 2N6770 IRFC130 IRFC230 IRFC330 IRFC430 406J JD 1801 IRFC9230 IRFC110 2N6847 irfc250

    Untitled

    Abstract: No abstract text available
    Text: 5bE D SIL I CO N T R A N S I S T O R CORP Ô S 5 4 0 2 2 O O G O ñ T G 433 ISTC SILICON " T 1 TRANSISTOR CORPORATION ~0> Katrina Road Chelmsford, Massachusetts 01824 Telephone: 508-256-3321 FAX: 508-250-1046 A POWERHOUSE 400 Volts 0.3 Ohms TECHNICAL DATA SHEET


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    PDF SNF20403 ST102 MIL-S-19500

    SILICON TRANSISTOR CORP

    Abstract: No abstract text available
    Text: SIL I CO N T R A N S I S T O R CORP SbE D • Ô E 5 4 D 2 2 G G 0 0 T Ì 2 1^7 « S T C SILICON T ' ^ -Z 7 TRANSISTOR CORPORATION Katrina Road Chelmsford, Massachusetts 01824 Telephone: 508-256-3321 FAX: 508-250-1046 A POWERHOUSE 300 0.3 QUAD N CHANNEL POWER MOSFET


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    PDF STQ302 ST102 MIL-S-19500 SILICON TRANSISTOR CORP

    BGY90A

    Abstract: SOT197
    Text: DEVELOPMENT DATA N AflER PH ILIPS/D ISCRETE DbE D This data *h*at eortttJmi « to n e « Informitton and " 11 • BGY90A specifications art tubject to change without notice, I I ; 86D 0 1046 D T - 7 </- a tf~~ o/ U.H.F. POWER MODULE The BGY90A is a two stage u.h.f. power module designed for use in mobile transmitting equipment


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    PDF bb53131 BGY90A 7Z80B39 800MHz 890MHz SOT197

    Untitled

    Abstract: No abstract text available
    Text: 27 K a trin a Road Chelm sford, M A 01824 Tel: 978 256-3321 Fax: (978)250-1046 W eb: www.stcsemi.com A PO W ERHOUSE hFE B vceo TO-3 Â à 41 i VcE(SAT) M ax @ I c/I b (volts) M in-M ax (a m p s/vo lts) (vo lts) (a m p s) 2N6058 80 12 750- 18000 6/3 2.0 6 / .024


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    PDF 2N6058 2N6059 2N6350 2N6351 14-PtN

    2SB919

    Abstract: jo16 2SD123
    Text: Ordering number: EN1046B 2S B 919/2S D 1235 PNP/NPN Epitaxial Planar Silicon Transistors 30V/8A High-Speed Switching Applications Use Large current switching o f relay drivers, high-speed inverters, converters Features • • Low collector-to-em itter saturation voltage: V cE sa t = _ '0 .5V(PNP), 0.4(NPN) max.


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    PDF EN1046B l046B 2SB919/2SD1235 2SB919 2SB919 jo16 2SD123

    TXAL 226 B

    Abstract: RCV144ACFW/SP r6749 RCV144ACFW RCV144 TXAL 226 "MNP 1OEC" 3BL DBM sds relay RCV336ACF/SP
    Text: 4L* R o c k w e l l Sem iconductor Systems RCV336ACF/SP and RCV144ACF/SP Modem Device Designer's Guide Preliminary Order No. 1046 Rev. 3, August 2.1996 RCV336ACF/SP and RCV144ACF/SP Modem Designer’s Guide 1. INTRODUCTION 1.1 SUMMARY The Rockwell RCV336ACF/SP and RCV144ACF/SP Modem Device Families support high speed data, high speed fax,


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    PDF RCV336ACF/SP RCV144ACF/SP TXAL 226 B RCV144ACFW/SP r6749 RCV144ACFW RCV144 TXAL 226 "MNP 1OEC" 3BL DBM sds relay

    5110 draft sensing pin

    Abstract: Rockwell fax modem smd diode lww accelerator rockwell modem rcv144 SPEAKERPHONE transistor smd rjm ce SMD CODE LWW
    Text: ^ R o c k w e ll Semiconductor Systems RCV336ACF/SP and RCV144ACF/SP Modem Device Designer's Guide Preliminary Order No. 1046 Rev. 3, August 2,1996 7Û11D73 0 0 2 ^ 1 fllT RCV336ACF/SP and RCV144ACF/SP Modem Designer’s Guide Table of Contents 1. INTRODUCTION. 1-1


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    PDF RCV336ACF/SP RCV144ACF/SP 11D73 ML144 5110 draft sensing pin Rockwell fax modem smd diode lww accelerator rockwell modem rcv144 SPEAKERPHONE transistor smd rjm ce SMD CODE LWW

    Untitled

    Abstract: No abstract text available
    Text: SIEMENS BCR 533 NPN Silicon Digital Transistor • Switching circuit, inverter, interface circuit, driver circuit • Built in bias resistor R-|=10k£2, R 2=10ki2 Ordering Code Pin Configuration XCs Q62702-C2382 1=B Package II CO o Marking BCR 533 LU II


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    PDF 10ki2) Q62702-C2382 OT-23 Thermal01 fi53SbQS

    BU326s

    Abstract: No abstract text available
    Text: S G S - T H O M S ON D7E » I J 1 2 i 2 3 7 Ü Q 1 7 Q 7 B ^ 1^ 67C 1^9 7 5 D 33 ^ J-Ì BU326S MULTIEPITAXIAL MESA NPN HIGH VO LTAGE POW ER SW ITCH The BU 3 2 6 S is a silicon multiepitaxiai N P N transistor in Jedec TO-3 metal case, par­ ticularly intended for sw itch-m ode C T V applications.


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    PDF BU326S DG17G7S 001707b BU326s