A 12-15 GHZ HIGH GAIN AMPLIFIER Search Results

tt 18934

Abstract: 30i sot23 5140 SN 74500
Contextual Info: SURFACE MOUNT NPN SILICON HIGH FREQUENCY TRANSISTOR NE686 SERIES FEATURES_ • HIGH GAIN BANDWIDTH PRODUCT: ft of 15 GHz • LOW VOLTAGE/LOW CURRENT OPERATION • HIGH INSERTION POWER GAIN: IS21El2 = 12 dB @ 2 V, 7 mA, 2 GHz IS21EI2 =11 dB @ 1 V, 5m A, 2G H z

Contextual Info: LOW NOISE L TO Ku-BAND GaAs MESFET FEATURES NE76038 NOISE FIGURE & ASSOCIATED GAIN vs. FREQUENCY Vos - 3 V, IDS = 10 m A LOW NOISE FIGURE: 1.8 dB typical at 12 GHz HIGH ASSOCIATED GAIN: 21 7.5 dB typical at 12 GHz 18 ffl 15 < a La s 0.3 |im, Wo = 280 jun LOW COST PLASTIC PACKAGING

LTA 703 S

Abstract: EM 408 gps beta e 555
Contextual Info: GENERAL PURPOSE L TO X-BAND GaAs MESFET OUTLINE DIMENSIONS FEATURES • NE721S01 Units in mm HIGH POWER GAIN: P A C K A G E OUTLINE S 01 7 d B TYP at 12 GHz • HIGH OUTPUT POWER: • Lg = 0.8 |_im, W g = 330 |_im 15 dBm TYP at 12 GHz • LOW PHASE NOISE:

BLM18HD182SN1D

Abstract: RC0402FR-07300RL YAGEO RC0402FR NXP MARKING 11* 3PIN marking code 6w LQG15HS3N9S02D
Contextual Info: SO T8 9 BGA3012 1 GHz 12 dB gain wideband amplifier MMIC Rev. 2 — 15 April 2013 Product data sheet 1. Product profile 1.1 General description The BGA3012 MMIC is a wideband amplifier with internal biasing. It is designed specifically for high linearity CATV line extenders and drop amplifiers over a frequency

CFA0301-A

Abstract: CF003-01 CFB0301-B CFB0301
Contextual Info: GaAs MESFET Transistor CF003-01 July 2008 - Rev 15-Jul-08 Features High Gain: 8 dB at 12 GHz P1dB Power: 22 dBm Wafer Qualification Procedure Customer Wafer Selection Available General Description Mimix CF003-01 GaAs-based transistor is a 600 um gate width, sub-half-micron gate length GaAs device with Silicon

Contextual Info: 43 dB Gain, 1 Watt, 12 GHz to 18 GHz, Broadband High Gain Amplifier, 39 dBm IP3, 6 dB NF, SMA TECHNICAL DATA SHEET PE15A3507 PE15A3507 is a 1W wideband coaxial power amplifier operating in the 12 to 18 GHz frequency range. The amplifier offers 30 dBm min of P1db and high 43 dB typical small signal gain with the gain flatness of ±1.5dB max and an outstanding output

Contextual Info: 41 dB Gain, 1 Watt, 8 GHz to 12 GHz, Medium Power High Gain Amplifier, 3.5 dB NF, SMA TECHNICAL DATA SHEET PE15A4008 PE15A4008 is a 1 W X-band high gain coaxial power amplifier in the 8 to 12 GHz frequency range. The amplifier offers 30 dBm of P1db min and 41 dB (min) small signal gain with the excellent gain flatness of ±1.0 dB. This performance is achieved

Contextual Info: HMC625LP5 / 625LP5E v08.0210 0.5 dB LSB GaAs MMIC 6-BIT DIGITAL VARIABLE GAIN AMPLIFIER, DC - 6 GHz Typical Applications Features The HMC625LP5 E is ideal for: -13.5 to +18 Gain Control in 0.5 dB Steps • Cellular/3G Infrastructure Power-up State Selection

Contextual Info: HMC926LP5E v00.0810 0.5 dB LSB 6-BIT DIGITAL VARIABLE GAIN AMPLIFIER, 700 - 2700 MHz Typical Applications Features The HMC926LP5E is ideal for: Gain Control Range in 0.5 dB Steps : @ 900 MHz, +6.5 to +38 dB @ 1900 MHz, +1 to +32.5 dB @ 2600 MHz, -4 to +27.5 dB

Contextual Info: HMC625LP5 / 625LP5E v09.0410 0.5 dB LSB GaAs MMIC 6-BIT DIGITAL VARIABLE GAIN AMPLIFIER, DC - 6 GHz Typical Applications Features The HMC625LP5 E is ideal for: -13.5 to +18 Gain Control in 0.5 dB Steps • Cellular/3G Infrastructure Power-up State Selection

LNA at 15 GHZ with Ultra high sensitivity

Abstract: MSOP-10 bluetooth transceiver hmc-28 2.4 ghz transmitter radio controlled with seven HBT MMIC Amplifier sot-86 HMC308 HMC310MS8G HMC315 HMC318MS8G
Contextual Info: OFF-THE-SHELF HITTITE MICROWAVE CORPORATION AUTUMN INSIDE. *12 NEW 2000 AMPLIFIERS Hittite HBT Amplifier Product Line Announced! RELEASED!. HBT MMICs Combine High Performance Design Expertise With InGaP GaAs Technology. Hittite has introduced five new InGaP HBT amplifiers

HMC926LP5E

Abstract: H926
Contextual Info: HMC926LP5E v00.0810 0.5 dB LSB 6-BIT DIGITAL VARIABLE GAIN AMPLIFIER, 700 - 2700 MHz Typical Applications Features The HMC926LP5E is ideal for: Gain Control Range in 0.5 dB Steps : • Cellular Infrastructure • WiBro, WiMAX and LTE/4G • Microwave Radio & VSAT

H625

Abstract: HMC625LP5 HMC625LP5E
Contextual Info: HMC625LP5 / 625LP5E v09.0410 0.5 dB LSB GaAs MMIC 6-BIT DIGITAL VARIABLE GAIN AMPLIFIER, DC - 6 GHz Typical Applications Features The HMC625LP5 E is ideal for: -13.5 to +18 Gain Control in 0.5 dB Steps • Cellular/3G Infrastructure Power-up State Selection

Contextual Info: HMC743LP6C / 743LP6CE v05.1011 0.5 dB LSB GaAs MMIC DUAL 6-BIT DIGITAL VARIABLE GAIN AMPLIFIER, DC - 4 GHz Designer’s Kit Available Typical Applications Features The HMC743LP6C E is ideal for: -45 to +18 dB Gain Control in 0.5 dB Steps • Cellular/3G Infrastructure

HMC743

Abstract: ACG12 h743 HMC743LP6
Contextual Info: HMC743LP6C / 743LP6CE v03.0810 0.5 dB LSB GaAs MMIC DUAL 6-BIT DIGITAL VARIABLE GAIN AMPLIFIER, DC - 4 GHz Typical Applications Features The HMC743LP6C E is ideal for: -45 to +18 dB Gain Control in 0.5 dB Steps • Cellular/3G Infrastructure Power-up State Selection

Contextual Info: HMC625LP5 / 625LP5E v09.0410 0.5 dB LSB GaAs MMIC 6-BIT DIGITAL VARIABLE GAIN AMPLIFIER, DC - 6 GHz Typical Applications Features The HMC625LP5 E is ideal for: -13.5 to +18 Gain Control in 0.5 dB Steps • Cellular/3G Infrastructure Power-up State Selection

H743

Contextual Info: HMC743LP6C / 743LP6CE v04.0311 0.5 dB LSB GaAs MMIC DUAL 6-BIT DIGITAL VARIABLE GAIN AMPLIFIER, DC - 4 GHz Typical Applications Features The HMC743LP6C E is ideal for: -45 to +18 dB Gain Control in 0.5 dB Steps • Cellular/3G Infrastructure Power-up State Selection

Contextual Info: HMC743LP6C / 743LP6CE v02.0709 0.5 dB LSB GaAs MMIC 12-BIT DIGITAL VARIABLE GAIN AMPLIFIER, DC - 4 GHz Typical Applications Features The HMC743LP6C E is ideal for: -45 to +18 dB Gain Control in 0.5 dB Steps • Cellular/3G Infrastructure Power-up State Selection

Contextual Info: HMC627LP5 / 627LP5E v10.0410 0.5 dB LSB GaAs MMIC 6-BIT DIGITAL VARIABLE GAIN AMPLIFIER, 50 MHz - 1 GHz Typical Applications Features The HMC627LP5 E is ideal for: -11.5 to 20 dB Gain Control in 0.5 dB Steps • Cellular/3G Infrastructure Power-up State Selection

Contextual Info: HMC627LP5 / 627LP5E v10.0410 0.5 dB LSB GaAs MMIC 6-BIT DIGITAL VARIABLE GAIN AMPLIFIER, 50 MHz - 1 GHz Typical Applications Features The HMC627LP5 E is ideal for: -11.5 to 20 dB Gain Control in 0.5 dB Steps • Cellular/3G Infrastructure Power-up State Selection

HMC627LP5E

Abstract: HMC627LP5
Contextual Info: HMC627LP5 / 627LP5E v10.0410 0.5 dB LSB GaAs MMIC 6-BIT DIGITAL VARIABLE GAIN AMPLIFIER, 50 MHz - 1 GHz Typical Applications Features The HMC627LP5 E is ideal for: -11.5 to 20 dB Gain Control in 0.5 dB Steps • Cellular/3G Infrastructure Power-up State Selection

Contextual Info: 2.4-2.5 GHz / 4.9-5.8 GHz Dual-Band Power Amplifier Module SST13LP05 Preliminary Specifications SST13LP052.4 - 2.5 GHz / 4.9-5.8 GHz Dual-Band Power Amplifier FEATURES: • High Gain: – Typically 29 dB gain across 2.4-2.5 GHz – Typically 29-26 dB gain across 4.9-5.8 GHz

SST13LP05

Abstract: SST13LP05-MLCF SST13LP05-MLCF-K
Contextual Info: 2.4-2.5 GHz / 4.9-5.8 GHz Dual-Band Power Amplifier Module SST13LP05 Preliminary Specifications SST13LP052.4 - 2.5 GHz / 4.9-5.8 GHz Dual-Band Power Amplifier FEATURES: • High Gain: – Typically 29 dB gain across 2.4-2.5 GHz – Typically 29-26 dB gain across 4.9-5.8 GHz

Contextual Info: SBBA-180-43-01-SMA DATA SHEET 12 GHz to 18 GHz, 43 dB Gain Broadband High Gain Amplifier with 1 Watt and SMA SBBA-180-43-01-SMA is a 1W wideband coaxial power amplifier operating in the 12 to 18 GHz frequency range. The amplifier offers 30 dBm min of P1db