A 564 TRANSISTOR Search Results

Contextual Info: Provisional Data Sheet No. PD - 9.1716 International IO R Rectifier IRFE9130 dv/dt R A TED J ANTX2N6849U HEXFET TRANSISTOR JANTXV2N6849U JANS2N6849U [REF:M IL-PRF-19500/564] R E P E T IT IV E A V A LA N CH E A N D P-CHANNEL Product Summary -1 OOVolt, 0.30Q, HEXFET

2N6849

Contextual Info: Tem ic SU.CO-X_2N6849 P-Channel Enhancement-Mode Transistor Product Summary V BR I)SS (V) r DS(on) (Q ) ID (A) -100 0.30 -6 .5 Parametric limits in accordance with MIL-S-19500/564 where applicable. TO-205AF (TO-39) r O — —if-

DD 127 D transistor

Abstract: 2N6849
Contextual Info: 2N6849 Qualified Levels: JAN, JANTX, JANTXV and JANS P-CHANNEL MOSFET Available on commercial versions Qualified per MIL-PRF-19500/564 DESCRIPTION This 2N6849 switching transistor is military qualified up to the JANS level for high-reliability applications. This device is also available in a low profile U surface mount package.

Contextual Info: 2N6849U Qualified Levels: JAN, JANTX, JANTXV and JANS P-CHANNEL MOSFET Compliant Qualified per MIL-PRF-19500/564 DESCRIPTION This 2N6849U switching transistor is military qualified up to the JANS level for high-reliability applications. This device is also available in a thru hole TO-205AF package. Microsemi also

DD 127 D TRANSISTOR

Abstract: transistor DD 127 D 2N6849 2N6849 JANTX u18 transistor
Contextual Info: 2N6849U Qualified Levels: JAN, JANTX, JANTXV and JANS P-CHANNEL MOSFET Compliant Qualified per MIL-PRF-19500/564 DESCRIPTION This 2N6849U switching transistor is military qualified up to the JANS level for high-reliability applications. This device is also available in a thru hole TO-205AF package. Microsemi also

2N6849

Contextual Info: 2N6849 Siliconix PĆChannel EnhancementĆMode Transistor Product Summary V BR DSS (V) rDS(on) (W) ID (A) -100 0.30 -6.5 Parametric limits in accordance with MILĆSĆ19500/564 where applicable. S TOĆ205AF (TOĆ39) S G 1 2 3 G D D Top View PĆChannel MOSFET

2N6851

Abstract: ON950
Contextual Info: 2N6851 Siliconix PĆChannel EnhancementĆMode Transistor Product Summary V BR DSS (V) rDS(on) (W) ID (A) -200 0.80 -4.0 Parametric limits in accordance with MILĆSĆ19500/564 where applicable. S TOĆ205AF (TOĆ39) S G 1 2 3 G D D Top View PĆChannel MOSFET

Contextual Info: Provisional Data Sheet No. PD - 9.1716 In t e r n a t io n a l IOR Rectifier ir f e 913o dv/dt RATED JANTX2N6849U HEXFET TRANSISTOR JANTXV2N6849U JANS2N6849U [REF:MIL-PRF-19500/564] R EPETITIVE AVALANCHE AND -100Volt,0.30Q , HEXFET T he le a d le ss c h ip c a rrie r LC C p a cka g e re p re se n ts

Contextual Info: P D - 9.1717 International Rectifier I R IRFE9230 JANTX2N6851 U R E P E T I T I V E A V A L A N C H E A N D dv/dt R A T E D JANTXV2N6851 U HEXFET TRANSISTOR JANS2N6851 U [REF:MIL-PRF-19500/564] P -C H A N N E L Product Summary B V dss Part Number -200Volt, 0.80ft, HEXFET

2N6849

Abstract: W41A
Contextual Info: 2N6849 N-Channel Enhancement-Mode Transistor Product Summary V BR DSS (V) rDS(on) (W) ID (A) –100 0.30 –6.5 Parametric limits in accordance with MIL-S-19500/564 where applicable. S TO-205AF (TO-39) S G 1 2 3 G D Top View D P-Channel MOSFET Absolute Maximum Ratings (TC = 25_C Unless Otherwise Noted)

2N6851

Contextual Info: 2N6851 P-Channel Enhancement-Mode Transistor Product Summary V BR DSS (V) rDS(on) (W) ID (A) –200 0.80 –4.0 Parametric limits in accordance with MIL-S-19500/564 where applicable. S TO-205AF (TO-39) S G 1 2 3 G D Top View D P-Channel MOSFET Absolute Maximum Ratings (TC = 25_C Unless Otherwise Noted)

Contextual Info: m Mtm RF Premia'is « M ic r o s e m i 140 Commerce Drive Montgomeryville, PA 18936-1013 Tei; <215} 631-9840 SOI 564 RF & MICROWAVE TRANSISTORS UHF PUI SE POWER « DESIGNED FOR HSGH P0VV6R PULSE A P P L I­ CATIONS » 400VV AT 60ys PU LS 6 W IDTH, 2% O.F » CHEATER THAN 7.5rfB GAIN

Contextual Info: H M -65642C /883 HARRIS 8K x 8 Asynchronous CMOS StStlC RAM J u n e 19 89 F eatures D escription • This Circuit is Processed in Accordance to Mil-Std883 and is Fully Conformant Under the Provisions of The H M -6 564 2C /88 3 is a CMOS 8192 x 8 -b it Static

Contextual Info: HARRIS SEMICOND SECTOR IbE D 430EH71 33 H A R R I S RCA BE 3 • FCT Interface Logic S E M I C O N D U C T O R HARRIS 0014414 T -ib -W -l I INTERSIL CD54/74FCT564, CD54/74FCT574 Advance Information 574 564 D O - - QO <50 Octal D-Type Flip-Flop, 3-State

Contextual Info: Int rnQt iOnQI Provisional Data Sheet No. PD-9.550B IQ R Rectifier JANTX2N6849 HEXFET POWER MOSFET JANTXV2N6849 [REF:MIL-PRF-19500/564] [GENERIC:IRFF9130] P -C H A N N E L -100 Volt, 0.300 HEXFET H E X F E T techn o lo g y is the key to International R ectifier’s advanced line of power M O S F E T transis­

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Contextual Info: £D HARRIS H M - 6 5 6 4 2 /8 8 3 8K x 8 Asynchronous CMOS Static RAM June 1989 Features D escrip tio n • This Circuit is Processed in Accordance to M il-S td 88 3 and is Fully Conform ant Under th e Provisions of Paragraph 1.2.1. The H M -6 564 2/88 3 is a CMOS 8192 x 8 -b it Static

transistor A 564

Abstract: transistor am s20 T06 transistor transistor t06 19 transistor t06
Contextual Info: Transistor Arrays gtECTRICAL CHARACTERISTICS <7> * 2SX! • fr Mm SLt * ; UPA101G1 UPA1Q2G2 UPA103G3 hFE Ces CCS: mA) CcB tpF) (pF) (pF) MAX MAX TYP TYP TYP TYP 1.0 1.0 1.0 1.0 100 - 1.0 1.0 100 100 0.9 1.4 1.4 1.4 •:1.4 iCBO (GHz) TYP MAX 9 40 40 40

2N6901 JANTX

Abstract: 2N6901 2N6901 JANTXV 2N6901 JANTX harris 2n6898 transistor h44 2n6800 2N6897 JANTXV 2N6897
Contextual Info: Logic-Level Power MOSFETs File Number 2N6901 1877 N-Channel Logic Level Power MOS Field-Effect Transistors L2FET rDs(on): 1.4 fi Feature*: • Design optimized for 5-voit gate drive ■ Can be driven directly from QMOS, NMOS, TTL circuits ■ Compatible with automotive drive requirements

transistor Arm 3055

Abstract: transistor Arm 3055 equivalent
Contextual Info: Jg} HARRIS HM -65642C/883 8K x 8 Asynchronous CMOS Static RAM Features D escrip tio n • This Circuit is Processed in Accordance to Mil-Std883 and is Fully Conformant Under the Provisions of Paragraph 1.2.1. • Full CMOS Design • Six Transistor Memory Cell

transistor A 564

Abstract: two 2sc2412k A 564 transistor transistor 564 imx1 transistor A 562 imx1 2SC2412K UMx1 dual 2sc2412k NPN Silicon Epitaxial Planar Transistor
Contextual Info: Transistors General purpose transistor dual transistors UMX1N / IMX1 FFeatures 1) Two 2SC2412K chips in a UMT or SMT package. 2) Mounting possible with UMT3 or SMT3 automatic mounting machines. 3) Transistor elements are independent, eliminating interference.

2N6898 JANTX

Abstract: 2N6898 2N6898 JANTXV TRANSISTOR C 557 B QPL-19500
Contextual Info: Standard Power MOSFETs File Number 2N6898 1876 Power MOS Field-Effect Transistors P-Channel Enhancement-Mode Power MOS Field-Effect Transistors 25 A, -1 0 0 V rDs on : 0.20 Cl TERMINAL DIAGRAM Features: • SOA is power-dissipation lim ited ■ Nanosecond switching speeds

QPL-19500

Abstract: 2N6903 2n6901 2N6758 JANTX 2N6903 JANTX 2N6898 JANTX 2N6898 2N6756 2N6758 2N6760
Contextual Info: Logic-Level Power MOSFETs File Number 2N6903 1879 N-Channel Logic Level Power MOS Field-Effect Transistors L2FET rDs(on): 3.65 O N-CHANNEL ENHANCEMENT MODE Features: • Design optimized for S-voit gate drive ■ Can be driven directly from QMOS, NMOS, TTL circuits

IC NE564

Abstract: telephone NT NE554 NE554 NE564 equivalent NE564 ana 618 equivalent KDK TRANSISTOR pll 564
Contextual Info: Application note Philips Semiconductors Linear Products Clock regenerator with crystal-controlled phase-locked loop VCO NE564 INTRODUCTION . “second-order” system . An RC series filter com bination will cause a ie ad-lag condition that w ill perm it dyna m ic selectivity, along with

transistor A 564

Contextual Info: KSE340 NPN EPITAXIAL SILICON TRANSISTOR HIGH COLLECTOR-EMITTER SUSTAINING VOLTAGE HIGH VOLTAGE G EN E R A L PURPO SE APPLICATIONS SUITABLE FOR TR A N SFO RM ER Complement to KSE350 ABSO LUTE MAXIMUM RATINGS Rating Unit Collector- Base Voltage Characteristic