A 798 TRANSISTOR Search Results

Contextual Info: ACPM-5013 3 x 3 mm Power Amplifier Module LTE Band13/14 777-798 MHz Data Sheet Description Features The ACPM-5013 is a fully matched 10-pin surface mount module developed for LTE Band 13 and Band 14, operating in the 777-798 MHz bandwidth. The ACPM-5013 meets

NL8060BC31-02

Contextual Info: DATA SHEET TFT COLOR LCD MODULE NL8060BC31-02 31 cm 12.1 type , 800 x 600 pixels, 262144 colors, incorporated one lamp/edge-light type backlight DESCRIPTION NL8060BC31-02 is a TFT (thin film transistor) active matrix color liquid crystal display (LCD) module comprising

Contextual Info: DATA SHEET TFT COLOR LCD MODULE NL8060BC31-09 31 cm 12.1 type , 800 x 600 pixels, 262144 colors, incorporated one lamp/edge-light type backlight DESCRIPTION NL8060BC31-09 is a TFT (thin film transistor) active matrix color liquid crystal display (LCD) module comprising

zo 103 ma

Abstract: BFT66 BFt 65 BFT 24 045912E Q62702-F456 RI-60 Q62702-F457 BFt 66 BFT67
Contextual Info: BFT 66 BFT 67 Extrem rauscharm e N P N -S iliziu m -B re itb a n d tra n s is to re n BFT 66 und BFT 67 sind epitaktische NPN-Silizium-Planar-UHF-Transistoren im Gehäuse 18 A4 DIN 41 876 T O -7 2 für Vorstufenanwendungen in extrem rauscharmen Breitband­

j521

Contextual Info: 3135GN-170M Rev 2 3135GN – 170M 170 Watts - 60 Volts, 300 s, 10% 3100 - 3500 MHz GENERAL DESCRIPTION CASE OUTLINE 55-QP Common Source The 3135GN-170M is an internally matched, COMMON SOURCE, class AB GaN on SiC transistor capable of providing 11dB gain, 170 Watts of pulsed RF

2731GN

Contextual Info: 2731GN-200M Rev 1 2731GN – 200M 200 Watts - 60 Volts, 200 s, 10% 2700 - 3100 MHz GENERAL DESCRIPTION CASE OUTLINE 55-QP Common Source The 2731GN-200M is an internally matched, COMMON SOURCE, class AB GaN on SiC transistor capable of providing 12dB gain, 200 Watts of pulsed RF

Contextual Info: 2729GN-270 Rev 2 2729GN – 270 270 Watts - 60 Volts, 100 s, 10% Radar 2700 - 2900 MHz GENERAL DESCRIPTION CASE OUTLINE 55-QP Common Source The 2729GN-270 is an internally matched, COMMON SOURCE, class AB GaN on SiC transistor capable of providing 14dB gain, 280 Watts of pulsed RF

Contextual Info: 2730GN-100L Rev 1 2730GN – 100L 100 Watts, 3 mS , 30%, +55 Volts 2700 - 3000 MHz GENERAL DESCRIPTION CASE OUTLINE 55-QP Common Source The 2730GN-100M is an internally matched, COMMON SOURCE, class AB GaN on SiC transistor capable of providing 11dB gain, 100 Watts of pulsed RF

BFW92

Abstract: philips bfw92 vk200 philips vk200.10 g04b030
Contextual Info: Philips Semiconductors Product specification 7 NPN 1 GHz wideband transistor PHILIPS BFW92 INTERNATIONAL DESCRIPTION NPN transistor in a plastic SOT37 envelope. It has a low noise over a wide current range, a very high power gain and good intermodulation properties. It is primarily intended for

2SK2332

Abstract: SHF 0088 Z166
Contextual Info: TOSHIBA 2SK2332 TOSHIBA FIELD EFFECT TRANSISTOR GaAs N CHANNEL SINGLE GATE MODULATION DOPE TYPE 2SK2332 Unit in mm SHF BAND LO W NOISE AM PLIFIER APPLICATIONS • • Low Noise Figure : NF = 0.65dB f=12GHz High Gain : Ga = lldB (f=12GHz) 2.16±0.2 M A X IM U M RATINGS (Ta = 25°C)

Contextual Info: TFT COLOR LCD MODULE NL8060BC31-20 30.8cm 12.1 Type SVGA DATA SHEET (3rd edition) All information is subject to change without notice. Document Number: EN0551EJ3V0DS00 (3rd edition) Published date: March 2002 N CP(N) ã NEC Corporation 2002 All rights reserved.

TBD CABLE

Abstract: NL8060BC26-27 DF9A-41P-1V SM03 BHR-03VS-1 DF9-41S-1V DOD-PD-0685
Contextual Info: Gleichmann & Co. Electronics GmbH Product Marketing Displays & Systems Industriestr. 16, D- 76297 Stutensee Tel :07249-910-0, Fax: 07249-910-559 http://www.msc-ge.com TFT COLOR LCD MODULE NL8060BC26-27 26.0cm 10.4 Type SVGA PRELIMINARY DATA SHEET DOD-PD-0685 (2nd edition)

25SI

Contextual Info: TN2524 Supertexinc. Low Threshold N-Channel Enhancement-Mode Vertical DMOS FETs Orderina Informâtion RdS ON (max) VûS(th) (max) 240V 6.0ft 2.0V Order Numb e r / Package If BVoss / BVcxss TO-243AA* Diet 1.0A TN2524N8 TN2524ND * Same as SOT-89. Product supplied on 2000 piece carrier tape reels,

d768 transistor

Abstract: 3-pin D128 transistor transistor D128 transistor D586 D1515 ne32584c application note transistor d436 d388 transistor D832 transistor transistor D442
Contextual Info: DATA DATA SHEET SHEET HETERO JUNCTION FIELD EFFECT TRANSISTOR NE32584C C to Ku BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET DESCRIPTION The NE32584C is a Hetero Junction FET that utilizes the PACKAGE DIMENSIONS Unit: mm hetero junction to create high mobility electrons. Its excellent

ZO 103 MA 75 623

Abstract: ZO 103 MA 75 542 1 928 405 767 NEC C 3568 TD-2433 2SC5008 2SC5008-T1 4557 nec 518 1149 0 44 111 1 928 405 452
Contextual Info: DATA SHEET SILICON TRANSISTOR 2SC5008 NPN SILICON EPITAXIAL TRANSISTOR 3 PINS ULTRA SUPER MINI MOLD DESCRIPTION The 2SC5008 is an NPN epitaxial silicon transistor designed for use PACKAGE DIMENSIONS in millimeters in low noise and small signal amplifiers from VHF band to L band. Low

2SC5006

Abstract: 2SC5006-T1 "Small Signal Amplifiers" P1038 TD-2399
Contextual Info: DATA SHEET SILICON TRANSISTOR 2SC5006 NPN SILICON EPITAXIAL TRANSISTOR 3 PINS ULTRA SUPER MINI MOLD DESCRIPTION The 2SC5006 is an NPN epitaxial silicon transistor designed for use in low noise and small signal amplifiers from VHF band to UHF band. Low noise figure, high gain, and high current capability achieve a very wide dynamic range

Contextual Info: Doc No. TT4-EA-14461 Revision. 3 Product Standards MOS FET SK8603140L SK8603140L Silicon N-channel MOS FET Unit : mm 5.1 For Load-switching / For DC-DC Converter 4.9 0.22 8 7 6 5 1 2 3 4 • Features  Marking Symbol : 14 5.9 6.15  Low Drain-source On-state Resistance : RDS on typ = 1.8 m  (VGS = 4.5 V)

NE32584C-T1

Abstract: nec 3435 transistor am 4428
Contextual Info: DATA SHEET HETERO JUNCTION FIELD EFFECT TRANSISTOR NE32584C C to Ku BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET DESCRIPTION PACKAGE DIMENSIONS Unit: mm T h e N E 3 25 84C is a H etero Jun ction F ET th a t utilizes the hetero ju n ctio n to crea te high m obility e lectron s.

IC SEM 2105

Abstract: 3771 nec
Contextual Info: DATA SHEET NEC SILICON TRANSISTOR 2SC5008 NPN SILICON EPITAXIAL TRANSISTOR 3 PINS ULTRA SUPER MINI MOLD DESCRIPTION PACKAGE DIMENSIONS The 2SC5008 is an NPN epitaxial silicon transistor designed for use in millimeters in low noise and small signal amplifiers from VHF band to L band. Low

MB3763PF

Contextual Info: FUJITSU SEMICONDUCTOR DATA SHEET DS04-29101-4E ASSP Bidirectional Motor Driver MB3763 • DESCRIPTION Fujitsu’s MB3763 Motor Driver with forward/reverse control capability, is used in applications such as the frontloading mechanism in video tape, or the auto-reverse tape deck, driven by a TTL signal. The MB3763 has 300

Contextual Info: TPS65310A-Q1 www.ti.com SLVSC15A – MAY 2013 – REVISED JUNE 2013 High Voltage Power Management IC for Automotive Safety Applications Check for Samples: TPS65310A-Q1 FEATURES 1 • • 2 • • • • • • Qualified for Automotive Applications AEC-Q100 Test Guidance with the Following

Contextual Info: TPS65310A-Q1 www.ti.com SLVSC15B – MAY 2013 – REVISED DECEMBER 2013 High-Voltage Power-Management IC for Automotive Safety Applications Check for Samples: TPS65310A-Q1 FEATURES • • • • 1 2 • • • • • • • • • • • • • Qualified for Automotive Applications

D1D1

Contextual Info: Doc No. TT4-EA-14212 Revision. 5 Product Standards MOS FET SC8673040L SC8673040L Unit : mm 5.1 Asymmetric Dual Silicon N-ch Power MOS FET 4.9 0.22 8 7 6 5 1 2 3 4 5.9 6.15 For DC-DC Converter • Features  Low Drain-source On-state Resistance : RDS on typ.

NTC 1000

Abstract: NTC 10k ntc 5.0 10 k ntc thermistor 48 volt circuit diagram Battery charger MARKING NTC RESISTOR temperature to resistance of 10k ntc resistor thermistor ntc 10k thermistor ntc r1 SC804
Contextual Info: SC804 Fully Integrated Lithium-Ion Battery Charger System with Timer PRELIMINARY POWER MANAGEMENT Description Features Fully integrated charger with FET pass transistor, reverse-blocking diode, sense resistor, timer, and thermal protection The SC804 is a fully integrated full-feature, single cell