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M4200

Contextual Info: WESTCODE SEMICONDUCTORS !“ Capsule Phase Control Thyristor Consists of a diffused silicon element mounted in an hermetic ceramic cold welded capsule, and features an amplifying gate. Available in industry standard and thin housings. Ratings ^DRM v DSM

Contextual Info: r1 MCD40 Thyristor/Diode Module TRMS — •TAVM V RRM — 2x 60 A 2x 38 A 1200-1600 V Preliminary data V RSM V DSM V RRM V DRM V V 1300 1700 1200 1600 / Type A/K G K II SOT-227 B, miniBLOC r I I MCD 40-12io6 MCD 40-16io6 A/K K = Cathode, A = Anode, G = Gate,

tv lg

Abstract: ko 247
Contextual Info: DIXYS Phase Control Thyristor CS 45 ITRM S = 75 A TAVM = 48 A V RRM = 800 -1600 V Advanced Data V RSM V DSM V ’ RRM V v DRM V V TO-247 AD Type A° - ^ G 900 1300 1700 800 1200 1600 CS 45-08io1 CS 45-12io1 CS 45-16io1 TAB C = Cathode, A = Anode, G = Gate

Contextual Info: OIXYS CS 30 Phase Control Thyristor vRRM = 1200-1600 V I T RMS I V RSM V RRM V DSM V DRM V V 1200 1400 1600 1200 1400 1600 = 4 9 A = 3 1 A TO-247 AD Type CS 30-12io1 CS 30-14io1 CS 30-16io1 C = Cathode, A = Anode, G = Gate TAB = Anode Symbol Test Conditions

CS458

Contextual Info: aixYS CS 45 v RRM Phase Control Thyristor V RSM V RRM V DSM V DRM V V T RMS 75 A T(AV)M 48 A TO-247 AD Type Ao ( ^ l ) o C G 800 1200 1600 900 1300 1700 8 0 0 -1600 V CS 45-08io1 CS 45-12io1 CS 45-16io1 C = Cathode, A = Anode, G = Gate TAB = Anode Symbol

M/LT 2146

Abstract: rsm ah 16
Contextual Info: OIXYS CS 45 v RRM Phase Control Thyristor V RSM V RRM V DSM V DRM V V T RMS 75 A T(AV)M 48 A TO-247 AD Type A O -^ T ‘ G 800 1200 1600 900 1300 1700 8 0 0 -1600 V CS 45-08io1 CS 45-12io1 CS 45-16io1 C = Cathode, A = Anode, G = Gate TAB = Anode Symbol Test Conditions

Contextual Info: a ix Y S CS 30 v RRM IT RMS Phase Control Thyristor T(AV)M V RSM V RRM V DSM V DRM V V 1200 1400 1600 1200 1400 1600 12 0 0 -1600 V 49 A 31 A TO-247 AD Type CS 30-12io1 CS 30-14io1 CS 30-16io1 C = Cathode, A = Anode, G = Gate TAB = Anode Maximum Ratings Symbol

pixy

Contextual Info: aixY S CS 20 v RRM Phase Control Thyristor V RSM V RRM V DSM V DRM V V 1200 1400 1600 12 0 0 -1600 V T RMS 30 A T(AV)M 19 A TO-247 AD Type Ao ( ^ l ) o C G 1200 1400 1600 CS 20-12io1 CS 20-14io1 CS 20-16io1 C = Cathode, A = Anode, G = Gate TAB = Anode Maximum Ratings

CY8C27443-24PXI

Abstract: MODULATOR DSM sample project of digital signal processing IOT02 analog Isolator analog multiplier low voltage analog multiplier Single-Bit ADCs in a Nutshell
Contextual Info: Signals-From-Noise Single-Bit ADCs in a Nutshell - Part III by Dave Van Ess, Principal Application Engineer, Cypress Semiconductor In our last installment http://www.analogZONE.com/iot_0205.htm we explored how to build delta-sigma modulators, handy little devices that convert an analog input into

Contextual Info: W FLESSE Y Semiconductors. ZN451 3'k DIGIT DVM 1C WITH EXTERNAL AUTO-ZERO The ZN451 is a complete digital voltmeter fabricated on a monolithic chip. A novel charge-balancing conversion technique ensures good linearity. The auto-zero function is completely digital in operation, thus obviating the need for a

AN1153

Abstract: ADSP-2185N
Contextual Info: DSM2180F3V DSM Digital Signal Processor System Memory for analog devices ADSP-218X family (3.3 V supply) NOT FOR NEW DESIGN FEATURES SUMMARY • Glueless Connection to DSP Figure 1. Packages – Easily add memory, logic, and I/O to DSP ■ 128K Byte Flash Memory

Contextual Info: DSM2180F3 DSM Digital Signal Processor System Memory for analog devices ADSP-218X family (5 V supply) NOT FOR NEW DESIGN FEATURES SUMMARY • Glueless Connection to DSP Figure 1. Packages – Easily add memory, logic, and I/O to DSP ■ 128K Byte Flash Memory

simple ladder motor diagram

Abstract: Different types of PWM techniques DCPWM 1024R advantages of digital pulse counter nuts CY8C27443 One of the simplest ways to generate a duty cycle is to use a PWM Dave Van Ess
Contextual Info: Single Bit DACs in a Nutshell Part I – DAC Basics By Dave Van Ess, Principal Application Engineer, Cypress Semiconductor Many embedded applications require generating analog outputs under digital control. It may be a DC reference voltage or an AC signal to stimulate transducers. It may be a reconstructed voice signal for some

an1171

Abstract: adsp 2186 instruction set transistor 13003 AD11 AD12 AD14 ADSP-218X DSM2180F3 PLCC52 PQFP52
Contextual Info: DSM2180F3 DSM Digital Signal Processor System Memory for analog devices ADSP-218X family (5 V supply) NOT FOR NEW DESIGN FEATURES SUMMARY • Glueless Connection to DSP Figure 1. Packages – Easily add memory, logic, and I/O to DSP ■ 128K Byte Flash Memory

CHN 510

Abstract: CHN 530 vdf displays an1171 PQFP52 PLD 5 AD11 AD12 AD14 ADSP-218X
Contextual Info: DSM2180F3V DSM Digital Signal Processor System Memory for analog devices ADSP-218X family (3.3 V supply) NOT FOR NEW DESIGN FEATURES SUMMARY • Glueless Connection to DSP Figure 1. Packages – Easily add memory, logic, and I/O to DSP 128K Byte Flash Memory

Contextual Info: DSM2180F3 DSM Digital Signal Processor System Memory for analog devices ADSP-218X family (5 V supply) NOT FOR NEW DESIGN FEATURES SUMMARY • Glueless Connection to DSP Figure 1. Packages – Easily add memory, logic, and I/O to DSP ) s ( t c u d o s) r

k941

Abstract: k 941 CMGS nec asic product letter sequential CIRCUIT nec ddr nec cb cell product letter
Contextual Info: ISSP/150 nm ASIC Technology ISSP1 - Standard Family Product Letter Description NEC‘s Instant Silicon Solution Platform ISSP is an ASIC architecture, that offers high system performance – up to 150 MHz system frequency and up to 250 MHz for local areas – in 0.13 µm (drawn) gate length technology at low NRE. ISSP

h13f

Abstract: AN1153
Contextual Info: DSM2180F3V DSM Digital Signal Processor System Memory for analog devices ADSP-218X family (3.3 V supply) NOT FOR NEW DESIGN FEATURES SUMMARY • Glueless Connection to DSP Figure 1. Packages – Easily add memory, logic, and I/O to DSP ) s ( t c u d o s)

TSMC 40nm

Abstract: TSMC 40nm layout issue cascode transistor array 90 nm CMOS Double high-speed switching diode EP4SE530 90-nm-FPGAs transistor gds
Contextual Info: Process-Design Co-Optimization for FPGA Qi Xiang Altera Corporation, 101 Innovation Drive, San Jose, CA 95134 Email: qxiang@altera.com Abstract Advancing field programmable gate array FPGA technology can be very challenging. Some of the major difficulties are power management and high-speed

BTW56

Abstract: BTW55 BTW53 3087 BTW52 BTW54 32917B
Contextual Info: ITT Semiconductors Thyristors Thyristors 5 Am p- -B T W Range PN PN Type R EFER EN CE T A B L E Outline Drawing No. Code V R WM V rsm V dWM VoSM Stock No. BTW 52 BTW 53 BTW 54 BTW 55 B TW 56 60 100 200 400 600 60 110 220 440 660 60 100 200 400 600 80 120

ior e78996

Abstract: IR E78996
Contextual Info: INTERNATIONAL RECTIFIER bSE D m INR MÖ55452 DDlbEL.^ T74 Bulletin E27104 International 1»] Rectifier IRFK4H150.IRFK4J150 Isolated Base Power H E X -p ak Assembly - Parallel Chip Configuration High Current Capability. UL recognised E78996. Electrically Isolated Base Plate.

TF561S

Abstract: TF541S
Contextual Info: THYRISTORS Electrical Characteristics Absolute M axim um Ratings Repetitive Peak Non-Repetitive Off-State Peak Off-State Voltage Voltage T ,= -40°C to T „ s Rgk= 1k£î Mean On-State Current Surge On-State Current 50Hz Half-Cycle N on-Repetitive 50Hz Sinewave

d3000 mosfet

Abstract: analogue ohmmeter circuit diagram ZN490 transistor d3000 d3000 TL091 ZN451 ZN451E d3000 fet ZN451CJ
Contextual Info: ZN451E ZN451CJ 3% digit DVM 1C with external auto-zero FEATURES DESCRIPTION • External circuits may be included in the auto-zero loop • Full-scale reading '1.999mV or lower • Measures sum or difference of two inputs • Digital auto-zero with guaranteed zero

scr C35

Abstract: 2N683 2N690 2N681-2N692 2N688 2n692 2N681 2N682 FREEPORT 2N684
Contextual Info: Semitronics Discrete Semiconductors C35 Series: 2N681-2N692 Description Phase Control SCR 16 Amperes / 25-800 Volts Silicon Controlled Rectifiers SCR are reverse blocking triode thyristor semiconductor devices designed for power switching and phase control