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    A S12068 Search Results

    A S12068 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    74AC11138NSR
    		Texas Instruments 3-Line to 8-Line Decoders/Demultiplexers 16-SO -40 to 85 Visit Texas Instruments
    74ACT11008N
    		Texas Instruments Quadruple 2-Input Positive-AND Gates 16-PDIP -40 to 85 Visit Texas Instruments Buy
    74ACT11030DE4
    		Texas Instruments 8-Input Positive-NAND Gates 14-SOIC -40 to 85 Visit Texas Instruments
    74ACT11240DW
    		Texas Instruments Octal Buffers/Line Drivers With 3-State Outputs 24-SOIC -40 to 85 Visit Texas Instruments Buy
    74ACT11244PWR
    		Texas Instruments Octal Buffers/Drivers With 3-State Outputs 24-TSSOP -40 to 85 Visit Texas Instruments Buy

    A S12068 Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    Contextual Info: SUM90N03-2m2P Vishay Siliconix N-Channel 30 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 30 a, e RDS(on) () ID (A) 0.0022 at VGS = 10 V 90 0.0027 at VGS = 4.5 V 90 Qg (Typ.) 82 nC TO-263 • TrenchFET Power MOSFET • 100 % Rg and UIS Tested • Material categorization:


    Original     		SUM90N03-2m2P O-263 SUM90N03-2m2P-E3 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 PDF

    Contextual Info: SUP90N03-03 Vishay Siliconix N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 30 RDS(on) () ID (A)a, e 0.0029 at VGS = 10 V 90 0.0033 at VGS = 4.5 V 90 Qg (Typ) • TrenchFET Power MOSFET • 100 % Rg and UIS Tested • Compliant to RoHS Directive 2011/65/EU


    Original     		SUP90N03-03 2011/65/EU O-220AB SUP90N03-03-E3 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 PDF

    RG 702 Diode

    Contextual Info: SUP90N03-03 Vishay Siliconix N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) () 30 ID (A)a, e 0.0029 at VGS = 10 V 90 0.0033 at VGS = 4.5 V 90 Qg (Typ) • TrenchFET Power MOSFET • 100 % Rg and UIS Tested • Compliant to RoHS Directive 2011/65/EU


    Original     		SUP90N03-03 2011/65/EU O-220AB SUP90N03-03-E3 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 RG 702 Diode PDF

    74342

    Contextual Info: SUM90N03-2m2P Vishay Siliconix N-Channel 30 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 30 a, e RDS(on) () ID (A) 0.0022 at VGS = 10 V 90 0.0027 at VGS = 4.5 V 90 Qg (Typ.) 82 nC TO-263 • TrenchFET Power MOSFET • 100 % Rg and UIS Tested • Material categorization:


    Original     		SUM90N03-2m2P O-263 SUM90N03-2m2P-E3 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 74342 PDF

    Contextual Info: Si8487DB Vishay Siliconix P-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY ID (A)a, e VDS (V) RDS(on) () Max. 0.031 at VGS = - 10 V - 7.7 - 30 0.035 at VGS = - 4.5 V - 7.3 0.045 at VGS = - 2.5 V - 6.4 TrenchFET Power MOSFET Low-on Resistance Ultra-Small 1.6 mm x 1.6 mm Maximum Outline


    Original     		Si8487DB Si8409DB 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 PDF

    Contextual Info: SUM90N03-2m2P Vishay Siliconix N-Channel 30 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 30 a, e RDS(on) () ID (A) 0.0022 at VGS = 10 V 90 0.0027 at VGS = 4.5 V 90 Qg (Typ.) 82 nC TO-263 • TrenchFET Power MOSFET • 100 % Rg and UIS Tested • Material categorization:


    Original     		SUM90N03-2m2P O-263 SUM90N03-2m2P-E3 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12 PDF

    Contextual Info: SUP90N03-03 Vishay Siliconix N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) () 30 ID (A)a, e 0.0029 at VGS = 10 V 90 0.0033 at VGS = 4.5 V 90 Qg (Typ) • TrenchFET Power MOSFET • 100 % Rg and UIS Tested • Compliant to RoHS Directive 2011/65/EU


    Original     		SUP90N03-03 2011/65/EU O-220AB SUP90N03-03-E3 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12 PDF

    Contextual Info: SUP90N03-03 Vishay Siliconix N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) () 30 ID (A)a, e 0.0029 at VGS = 10 V 90 0.0033 at VGS = 4.5 V 90 Qg (Typ) • TrenchFET Power MOSFET • 100 % Rg and UIS Tested • Compliant to RoHS Directive 2011/65/EU


    Original     		SUP90N03-03 2011/65/EU O-220AB SUP90N03-03-E3 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12 PDF

    SI8487DB-T1-E1

    Abstract: 71990 SI8902 si8487
    Contextual Info: Si8487DB Vishay Siliconix P-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY ID (A)a, e VDS (V) RDS(on) () Max. 0.031 at VGS = - 10 V - 7.7 - 30 0.035 at VGS = - 4.5 V - 7.3 0.045 at VGS = - 2.5 V - 6.4 TrenchFET Power MOSFET Low-on Resistance Ultra-Small 1.6 mm x 1.6 mm Maximum Outline


    Original     		Si8487DB Si8409DB 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 SI8487DB-T1-E1 71990 SI8902 si8487 PDF

    Contextual Info: SUP90N03-03 Vishay Siliconix N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) () 30 ID (A)a, e 0.0029 at VGS = 10 V 90 0.0033 at VGS = 4.5 V 90 Qg (Typ) • TrenchFET Power MOSFET • 100 % Rg and UIS Tested • Compliant to RoHS Directive 2011/65/EU


    Original     		SUP90N03-03 2011/65/EU O-220AB SUP90N03-03-E3 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 PDF

    si1308

    Abstract: SI1308EDL
    Contextual Info: New Product Si1308EDL Vishay Siliconix N-Channel 30 V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) () Max. ID (A)c 0.132 at VGS = 10 V 1.5 0.144 at VGS = 4.5 V 1.4 0.185 at VGS = 2.5 V 1.3 VDS (V) 30 Qg (Typ.) 1.4 nC • Smart Phones, Tablet PC’s - DC/DC Converters


    Original     		Si1308EDL OT-323 SC-70 Si1308EDL-T1-GE3 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 si1308 PDF

    Contextual Info: New Product Si1308EDL Vishay Siliconix N-Channel 30 V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) () Max. ID (A)c 0.132 at VGS = 10 V 1.5 0.144 at VGS = 4.5 V 1.4 0.185 at VGS = 2.5 V 1.3 VDS (V) 30 Qg (Typ.) 1.4 nC • Smart Phones, Tablet PC’s - DC/DC Converters


    Original     		Si1308EDL OT-323 SC-70 Si1308EDL-T1-GE3 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A PDF

    Contextual Info: New Product Si1308EDL Vishay Siliconix N-Channel 30 V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) () Max. ID (A)c 0.132 at VGS = 10 V 1.5 0.144 at VGS = 4.5 V 1.4 0.185 at VGS = 2.5 V 1.3 VDS (V) 30 Qg (Typ.) 1.4 nC S • Smart Phones, Tablet PC’s - DC/DC Converters


    Original     		Si1308EDL OT-323 SC-70 Si1308EDL-T1-GEemarks 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 PDF

    PP1212

    Abstract: AN2010 255D 593D AN2011 C3216X5R IHLP2525 ZL2005 si7406dh si6404
    Contextual Info: ZL2005 Component Selection Guide May 01, 2009 Application Note AN2011.0 T D = on Tsw Eq. [1] 28 29 SGND V25 18 VSEN 30 XTEMP 17 VRTK 31 TACH 16 SS1 32 MGN 13 V1 15 SS0 EN 12 V0 CFG DLY0 11 FC1 14 UVLO PG DLY1 10 FC0 33 The buck converter shown in Figure 1 is a well- known


    Original     		ZL2005 AN2011 PP1212 AN2010 255D 593D C3216X5R IHLP2525 si7406dh si6404 PDF

    Contextual Info: SiHU3N50D www.vishay.com Vishay Siliconix D Series Power MOSFET FEATURES PRODUCT SUMMARY VDS V at TJ max. • Optimal Design - Low Area Specific On-Resistance - Low Input Capacitance (Ciss) 550 RDS(on) max. () at 25 °C VGS = 10 V 3.2 Qg (max.) (nC) 20


    Original     		SiHU3N50D O-251) 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 PDF

    Contextual Info: SiHG17N60D www.vishay.com Vishay Siliconix D Series Power MOSFET FEATURES PRODUCT SUMMARY VDS V at TJ max. • Optimal Design 650 RDS(on) max. at 25 °C () VGS = 10 V Qg (Max.) (nC) 90 Qgs (nC) 14 Qgd (nC) 22 Configuration - Low Area Specific On-Resistance


    Original     		SiHG17N60D O-247AC 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 PDF

    Contextual Info: SiHG17N60D www.vishay.com Vishay Siliconix D Series Power MOSFET FEATURES PRODUCT SUMMARY VDS V at TJ max. • Optimal Design 650 RDS(on) max. at 25 °C () VGS = 10 V Qg (Max.) (nC) 90 Qgs (nC) 14 Qgd (nC) 22 Configuration - Low Area Specific On-Resistance


    Original     		SiHG17N60D O-247AC 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 PDF

    Contextual Info: SiHG17N60D www.vishay.com Vishay Siliconix D Series Power MOSFET FEATURES PRODUCT SUMMARY VDS V at TJ max. • Optimal Design 650 RDS(on) max. at 25 °C () VGS = 10 V Qg (Max.) (nC) 90 Qgs (nC) 14 Qgd (nC) 22 Configuration - Low Area Specific On-Resistance


    Original     		SiHG17N60D O-247AC 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12 PDF

    Contextual Info: SiHD3N50D www.vishay.com Vishay Siliconix D Series Power MOSFET FEATURES PRODUCT SUMMARY VDS V at TJ max. • Optimal Design - Low Area Specific On-Resistance - Low Input Capacitance (Ciss) 550 RDS(on) max. () at 25 °C VGS = 10 V 3.2 Qg (max.) (nC) 20


    Original     		SiHD3N50D O-252) 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 PDF

    Contextual Info: SiHP10N40D www.vishay.com Vishay Siliconix D Series Power MOSFET FEATURES PRODUCT SUMMARY VDS V at TJ max. • Optimal Design - Low Area Specific On-Resistance - Low Input Capacitance (Ciss) 450 RDS(on) max. at 25 °C () VGS = 10 V 0.6 Qg max. (nC) 30


    Original     		SiHP10N40D O-220AB 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12 PDF

    Contextual Info: SiHF6N40D www.vishay.com Vishay Siliconix D Series Power MOSFET FEATURES PRODUCT SUMMARY VDS V at TJ max. • Optimal Design - Low Area Specific On-Resistance - Low Input Capacitance (Ciss) - Reduced Capacitive Switching Losses - High Body Diode Ruggedness


    Original     		SiHF6N40D 2011/65/EU O-220 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 PDF

    forth dimension displays

    Abstract: SIHU3N50D-GE3
    Contextual Info: SiHU3N50D www.vishay.com Vishay Siliconix D Series Power MOSFET FEATURES PRODUCT SUMMARY VDS V at TJ max. • Optimal Design - Low Area Specific On-Resistance - Low Input Capacitance (Ciss) 550 RDS(on) max. () at 25 °C VGS = 10 V 3.2 Qg (max.) (nC) 20


    Original     		SiHU3N50D O-251) 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 forth dimension displays SIHU3N50D-GE3 PDF

    SIHF6N40D-E3

    Contextual Info: SiHF6N40D www.vishay.com Vishay Siliconix D Series Power MOSFET FEATURES PRODUCT SUMMARY VDS V at TJ max. • Optimal Design - Low Area Specific On-Resistance - Low Input Capacitance (Ciss) - Reduced Capacitive Switching Losses - High Body Diode Ruggedness


    Original     		SiHF6N40D O-220 2011/65/EU 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 SIHF6N40D-E3 PDF

    Contextual Info: SiHP10N40D www.vishay.com Vishay Siliconix D Series Power MOSFET FEATURES PRODUCT SUMMARY VDS V at TJ max. • Optimal Design - Low Area Specific On-Resistance - Low Input Capacitance (Ciss) 450 RDS(on) max. at 25 °C () VGS = 10 V 0.6 Qg max. (nC) 30


    Original     		SiHP10N40D O-220AB 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12 PDF