A.4 SOT363 Search Results

Contextual Info: £ £ N £ H K F R E E S C A L E SEMICONDUCTOR, A L L R IG H T S RESERVED. INC. MECHANICAL TITLE' OUTLINE DOCUMENT SOT363, 6LD, 0.65MM DITCH CASE PRINT NO' 9 8 A S B 4 2 9 8 5 B NUMBER' 4 1 9 B -0 1 STANBARB VERSIEN NUN-UEBEC NET TE SCALE REV' J 24 MAY

Contextual Info: ESD1P0RF. RF ESD Protection Diodes • ESD / transient protection of RF antenna / interfaces or ultra high speed data lines acc. to: IEC61000-4-2 ESD : ± 20 kV (contact) IEC61000-4-4 (EFT): 40 A (5/50 ns) IEC61000-4-5 (surge): 10 A (8/20 µs) • Ultra low capacitance of 1 pF typ.

Contextual Info: ESD1P0RF. RF ESD Protection Diodes • ESD / transient protection of RF antenna / interfaces or ultra high speed data lines acc. to: IEC61000-4-2 ESD : ± 20 kV (contact) IEC61000-4-4 (EFT): 40 A (5/50 ns) IEC61000-4-5 (surge): 10 A (8/20 µs) • Ultra low capacitance of 1 pF typ.

SOt323 marking code 6X

Abstract: BCR108S BCR108W IEC61000-4-4 marking code INFINEON MARKING CODE 2I ESD1P0RFW
Contextual Info: ESD1P0RF. RF ESD Protection Diodes • ESD / transient protection of RF antenna / interfaces or ultra high speed data lines acc. to: IEC61000-4-2 ESD : ± 20 kV (contact) IEC61000-4-4 (EFT): 40 A (5/50 ns) IEC61000-4-5 (surge): 10 A (8/20 µs) • Ultra low capacitance of 1 pF typ.

BCR108S

Abstract: BCR108W IEC61000-4-4 SOt323 marking code 6X
Contextual Info: ESD1P0RF. RF ESD Protection Diodes • ESD / transient protection of RF antenna / interfaces or ultra high speed data lines acc. to: IEC61000-4-2 ESD : ± 20 kV (contact) IEC61000-4-4 (EFT): 40 A (5/50 ns) IEC61000-4-5 (surge): 10 A (8/20 µs) • Ultra low capacitance of 1 pF typ.

si1428

Contextual Info: New Product Si1428EDH Vishay Siliconix N-Channel 30 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) () ID (A)a 0.045 at VGS = 10 V 4 30 0.049 at VGS = 4.5 V 4 0.060 at VGS = 2.5 V 4 Qg (Typ.) 4 nC • Halogen-free According to IEC 61249-2-21 Definition

sot363 marking DATE code

Abstract: BCR108S IEC61000-4-4 ESD5V0S5US-E6727 ESD5V0S5US
Contextual Info: ESD5V0SxUS Multi-Channel TVS Diode Array • ESD / transient protection of data and power lines in 3.3 V / 5 V application according to: IEC61000-4-2 ESD : ± 30 KV (contact) IEC61000-4-4 (EFT): 80 A (5/50 ns) IEC61000-4-5 (Surge): 10 A (8/20 µs) • Working voltage: 5 V (5.3 V max.)

Contextual Info: ESD5V0SxUS Multi-Channel TVS Diode Array • ESD / transient protection of data and power lines in 3.3 V / 5 V application according to: IEC61000-4-2 ESD : ± 25 KV (contact) IEC61000-4-4 (EFT): 40 A (5/50 ns) IEC61000-4-5 (Lighting): 6 A (8/20 µs) • Max. working voltage: 5 V (5.3 V max.)

Contextual Info: New Product Si1428EDH Vishay Siliconix N-Channel 30 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) () ID (A)a 0.045 at VGS = 10 V 4 30 0.049 at VGS = 4.5 V 4 0.060 at VGS = 2.5 V 4 Qg (Typ.) 4 nC • Halogen-free According to IEC 61249-2-21 Definition

Si1401

Abstract: SI1401EDH-T1-GE3 si1401e
Contextual Info: New Product Si1401EDH Vishay Siliconix P-Channel 12 V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) () ID (A)a 0.034 at VGS = - 4.5 V -4 VDS (V) - 12 0.046 at VGS = - 2.5 V -4 0.070 at VGS = - 1.8 V -4 0.110 at VGS = - 1.5 V -4 • Halogen-free According to IEC 61249-2-21

ESD5V0S5US-E6727

Contextual Info: ESD5V0SxUS Multi-Channel TVS Diode Array • ESD / transient protection of data and power lines in 3.3 V / 5 V application according to: IEC61000-4-2 ESD : ± 30 KV (contact) IEC61000-4-4 (EFT): 80 A (5/50 ns) IEC61000-4-5 (Surge): 10 A (8/20 µs) • Working voltage: 5 V (5.3 V max.)

Contextual Info: New Product Si1401EDH Vishay Siliconix P-Channel 12 V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) () ID (A)a 0.034 at VGS = - 4.5 V -4 VDS (V) - 12 0.046 at VGS = - 2.5 V -4 0.070 at VGS = - 1.8 V -4 0.110 at VGS = - 1.5 V -4 • Halogen-free According to IEC 61249-2-21

Contextual Info: New Product Si1401EDH Vishay Siliconix P-Channel 12 V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) () ID (A)a 0.034 at VGS = - 4.5 V -4 VDS (V) - 12 0.046 at VGS = - 2.5 V -4 0.070 at VGS = - 1.8 V -4 0.110 at VGS = - 1.5 V -4 • Halogen-free According to IEC 61249-2-21

si1401e

Abstract: 70080
Contextual Info: New Product Si1401EDH Vishay Siliconix P-Channel 12 V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) () ID (A)a 0.034 at VGS = - 4.5 V -4 VDS (V) - 12 0.046 at VGS = - 2.5 V -4 0.070 at VGS = - 1.8 V -4 0.110 at VGS = - 1.5 V -4 • Halogen-free According to IEC 61249-2-21

AN815

Contextual Info: New Product Si1428EDH Vishay Siliconix N-Channel 30 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) () ID (A)a 0.045 at VGS = 10 V 4 30 0.049 at VGS = 4.5 V 4 0.060 at VGS = 2.5 V 4 Qg (Typ.) 4 nC • Halogen-free According to IEC 61249-2-21 Definition

Contextual Info: ESD5V0SxUS Multi-Channel TVS Diode Array • ESD / transient protection of data and power lines in 3.3 V / 5 V application according to: IEC61000-4-2 ESD : ± 30 KV (contact) IEC61000-4-4 (EFT): 80 A (5/50 ns) IEC61000-4-5 (Surge): 10 A (8/20 µs) • Working voltage: 5 V (5.3 V max.)

Contextual Info: New Product Si1401EDH Vishay Siliconix P-Channel 12 V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) () ID (A)a 0.034 at VGS = - 4.5 V -4 VDS (V) - 12 0.046 at VGS = - 2.5 V -4 0.070 at VGS = - 1.8 V -4 0.110 at VGS = - 1.5 V -4 • Halogen-free According to IEC 61249-2-21

CE121

Contextual Info: Thal H E W L E T T m iftM P A C K A R D 0.5 - 6 GHz Low Noise GaAs MMIC Amplifier Technical Data MGA-86563 Featu res • Ultra-M iniature Package • Internally Biased, Single +5 V Supply 1 4 mA • 1.6 dB Noise Figure a t 2 .4 GHz • 2 1 .8 dB Gain a t 2 .4 GHz

MARKING d5 SOT363

Contextual Info: SEMICONDUCTOR PF0224US6 TECHNICAL DATA EMI Filtering TVS APPLICATION EMI Filter and line termination for USB upstream ports on. USB Hubs B B1 PC peripherals 1 6 2 5 3 4 DIM A A1 B A C EMI/RFI filtering. A1 C FEATURES ESD Protection to IEC 61000-4-2 Level 4.

PF0314US6

Abstract: MARKING d5 SOT363
Contextual Info: SEMICONDUCTOR PF0314US6 TECHNICAL DATA EMI Filtering TVS APPLICATION EMI Filter and line termination for USB upstream ports on. USB Hubs B B1 PC peripherals 1 6 2 5 3 4 DIM A A1 B A C EMI/RFI filtering. A1 C FEATURES ESD Protection to IEC 61000-4-2 Level 4.

Contextual Info: New Product Si1441EDH Vishay Siliconix P-Channel 20 V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) () ID (A)a 0.041 at VGS = - 4.5 V -4 0.054 at VGS = - 2.5 V -4 0.100 at VGS = - 1.8 V -4 VDS (V) - 20 • Halogen-free According to IEC 61249-2-21 Definition

Contextual Info: New Product Si1441EDH Vishay Siliconix P-Channel 20 V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) () ID (A)a 0.041 at VGS = - 4.5 V -4 0.054 at VGS = - 2.5 V -4 0.100 at VGS = - 1.8 V -4 VDS (V) - 20 • Halogen-free According to IEC 61249-2-21 Definition

CMKTVS5-4

Contextual Info: CMKTVS5-4 w w w. c e n t r a l s e m i . c o m SURFACE MOUNT SILICON LOW CAPACITANCE QUAD TVS/DIODE ARRAY DESCRIPTION: The CENTRAL SEMICONDUCTOR CMKTVS5-4 is a 4-line TVS/Diode array packaged in an ULTRAminiTM surface mount case. With its low capacitance, this

Contextual Info: Si1414DH Vishay Siliconix N-Channel 30 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 30 a RDS(on) () ID (A) 0.046 at VGS = 4.5 V 4 0.050 at VGS = 2.5 V 4 0.057 at VGS = 1.8 V 4 • TrenchFET Power MOSFET • 100 % Rg Tested • Material categorization: