A0 SOT-23 MOSFET Search Results

Contextual Info: LESHAN RADIO COMPANY, LTD. Power MOSFET 200 mAmps, 50 Volts LBSS138LT1G N–Channel SOT–23 3 Typical applications are dc–dc converters, power management in portable and battery–powered products such as computers, printers, PCMCIA cards, cellular and cordless telephones.

Contextual Info: LESHAN RADIO COMPANY, LTD. Power MOSFET 130 mAmps, 50 Volts P–Channel SOT–23 These miniature surface mount MOSFETs reduce power loss conserve energy, making this device ideal for use in small power management circuitry. Typical applications are dc–dc converters, load

Contextual Info: LESHAN RADIO COMPANY, LTD. 20V N-Channel Enhancement-Mode MOSFET LN2302LT1G VDS= 20V RDS ON , Vgs@4.5V, Ids@2.8A = 60m Ω RDS(ON), Vgs@2.5V, Ids@2.0A = 115mΩ 3 1 2 Features SOT– 23 (TO–236AB) High Density Cell Design For Ultra Low On-Resistance Improved Shoot-Through FOM

Contextual Info: LESHAN RADIO COMPANY, LTD. Power MOSFET 750 mAmps, 20 Volts LMGSF1N02LT1G N–Channel SOT–23 These miniature surface mount MOSFETs low RDS on assure minimal power loss and conserve energy, making these devices ideal for use in space sensitive power management circuitry. Typical

Contextual Info: LESHAN RADIO COMPANY, LTD. Small Signal MOSFET 115 mAmps, 60 Volts L2N7002LT1G N–Channel SOT–23 3 • Pb−Free Package is Available. 1 2 MAXIMUM RATINGS Rating Symbol Value Unit Drain–Source Voltage VDSS 60 Vdc Drain–Gate Voltage RGS = 1.0 MΩ

sot-23 single diode mark PD

Abstract: LN2302LT1G SC-75 LN2302LT3G mark 642 sot 6 mark 642 sot 363 single diode sot-23 mark pd SOT23 MARKING N02 MARK LTRA SOT23
Contextual Info: LESHAN RADIO COMPANY, LTD. 20V N-Channel Enhancement-Mode MOSFET LN2302LT1G VDS= 20V RDS ON , Vgs@4.5V, Ids@2.8A = 60m Ω RDS(ON), Vgs@2.5V, Ids@2.0A = 115mΩ 3 1 2 Features SOT– 23 (TO–236AB) High Density Cell Design For Ultra Low On-Resistance Improved Shoot-Through FOM

LP4101LT1G

Abstract: P41 sot-23 mark 642 sot 363 MARKING d1 sot-723 SC-75 SOT-353 MARKING 8v sot-23 single diode mark PD
Contextual Info: LESHAN RADIO COMPANY, LTD. 20V P-Channel Enhancement-Mode MOSFET LP4101LT1G VDS= -20V RDS ON , Vgs@-4.5V, Ids@-2.8A = 100 mΩ RDS(ON), Vgs@-2.5V, Ids@-2.0A = 150 mΩ 3 Features Advanced trench process technology 1 High Density Cell Design For Ultra Low On-Resistance

LP2301LT1G

Abstract: SC-75 SOT-353 MARKING 8v 619 SOT 23 sot-23 single diode mark PD
Contextual Info: LESHAN RADIO COMPANY, LTD. 20V P-Channel Enhancement-Mode MOSFET LP2301LT1G VDS= -20V RDS ON , Vgs@-4.5V, Ids@-2.8A = 100 mΩ RDS(ON), Vgs@-2.5V, Ids@-2.0A = 150 mΩ 3 Features Advanced trench process technology 1 High Density Cell Design For Ultra Low On-Resistance

ln2312

Contextual Info: LESHAN RADIO COMPANY, LTD. 20V N-Channel Enhancement-Mode MOSFET VDS= 20V RDS ON , Vgs@4.5V, Ids@5.0A = 41mΩ RDS(ON), Vgs@2.5V, Ids@4.5A = 47mΩ Features LN2312LT1G 3 Advanced trench process technology 1 High Density Cell Design For Ultra Low On-Resistance

LN2312LT1G

Abstract: LN2312LT3G mark 642 sot 363 SC-75 SOT-353 MARKING 8v SOT-353 vg
Contextual Info: LESHAN RADIO COMPANY, LTD. 20V N-Channel Enhancement-Mode MOSFET VDS= 20V RDS ON , Vgs@4.5V, Ids@5.0A = 41mΩ RDS(ON), Vgs@2.5V, Ids@4.5A = 47mΩ Features LN2312LT1G 3 Advanced trench process technology 1 High Density Cell Design For Ultra Low On-Resistance

SOT-353 MARKING 8v

Abstract: diode SM 88A MOSFET SC-59 power gs 069 SC-75 sot marking a1 353 marking 118 sot-323 marking 25 SOD-323 6C t marking code sot 23
Contextual Info: LESHAN RADIO COMPANY, LTD. Small Signal MOSFET 115 mA, 60 V L2N7002WT1G N–Channel SOT–323 • 3 We declare that the material of product compliance with RoHS requirements. 1 2 MAXIMUM RATINGS Rating Symbol Value Unit Drain–Source Voltage VDSS 60 Vdc Drain–Gate Voltage RGS = 1.0 MΩ

Contextual Info: LESHAN RADIO COMPANY, LTD. N-CHANNEL POWER MOSFET LBSS123LT1G LBSS123LT1G FEATURE 3 ƽ Pb-Free Package is available. 1 2 DEVICE MARKING AND ORDERING INFORMATION Device SOT-23 Marking Shipping LBSS123LT1G SA 3000/Tape&Reel LBSS123LT3G SA 10000/Tape&Reel 1 Gate

Contextual Info: LESHAN RADIO COMPANY, LTD. N-CHANNEL POWER MOSFET LMBF170LT1G LMBF170LT1G 3 FEATURE 1 ƽ Pb-Free Package is available. 2 SOT-23 DEVICE MARKING AND ORDERING INFORMATION Device Marking Drain 3 Shipping LMBF170LT1G 6Z 3000/Tape&Reel LMBF170LT3G 6Z 10000/Tape&Reel

SC-75

Abstract: sod-323 kn MARKING kn SOd323 SOD-323 marking KN sot-23 single diode mark PD L2SK3019LT1G code marking 2M sot-23 MOSFET l2sk3019
Contextual Info: LESHAN RADIO COMPANY, LTD. Silicon N-Channel MOSFET L2SK3019LT1G Applications 3 Interfacing,switching 30V,100mA 1 Features 2 Low on-resistance SOT– 23 Fast switching speed Low voltage drive(2.5V) makes this ideal for portable equipment Equivalent circuit

Contextual Info: LESHAN RADIO COMPANY, LTD. Power MOSFET 200 mAmps, 50 Volts LBSS138WT1G N–Channel SC-70 3 Typical applications are dc–dc converters, power management in portable and battery–powered products such as computers, printers, PCMCIA cards, cellular and cordless telephones.

LBSS138WT1G

Abstract: LBSS138WT3G SC-75 LBSS138
Contextual Info: LESHAN RADIO COMPANY, LTD. Power MOSFET 200 mAmps, 50 Volts LBSS138WT1G N–Channel SC-70 Typical applications are dc–dc converters, power management in portable and battery–powered products such as computers, printers, PCMCIA cards, cellular and cordless telephones.

LBSS138WT1G

Contextual Info: LESHAN RADIO COMPANY, LTD. LBSS138WT1G S-LBSS138WT1G Power MOSFET 200 mAmps, 50 Volts N–Channel SC-70 3 Typical applications are dc–dc converters, power management in portable and battery–powered products such as computers, printers, PCMCIA cards, cellular and cordless telephones.

2N16

Abstract: BC237 BCY72
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA  MGSF1P02ELT1 Preliminary Information Motorola Preferred Device Low rDS on Small-Signal MOSFETs TMOS Single P-Channel Field Effect Transistors Part of the GreenLine Portfolio of devices with energy– conserving traits.

BC237

Abstract: MARKING CODE diode sod123 W1 K 2056 transistor
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA  MGSF3455XT1 Preliminary Information Motorola Preferred Device Low rDS on Small-Signal MOSFETs TMOS Single P-Channel Field Effect Transistors  Part of the GreenLine Portfolio of devices with energy– conserving traits.

2n2222 h 331 transistors

Abstract: 2n2222 -331 transistors 2n2222 331 transistors BC237 2n2222 h 331 MARKING CODE diode sod123 W1
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA  MGSF3442XT1 Preliminary Information Motorola Preferred Device Low rDS on Small-Signal MOSFETs TMOS Single N-Channel Field Effect Transistors  Part of the GreenLine Portfolio of devices with energy– conserving traits.

BC237

Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA  MGSF1N02LT1 Motorola Preferred Device Low rDS on Small-Signal MOSFETs TMOS Single N-Channel Field Effect Transistors Part of the GreenLine Portfolio of devices with energy– conserving traits. N–CHANNEL ENHANCEMENT–MODE

BC237

Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA  MGSF1N03LT1 Motorola Preferred Device Low rDS on Small-Signal MOSFETs TMOS Single N-Channel Field Effect Transistors Part of the GreenLine Portfolio of devices with energy– conserving traits. N–CHANNEL ENHANCEMENT–MODE

BC237

Abstract: marking CODE N3 SOT223 marking N3
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA  MGSF1N03LT1 Motorola Preferred Device Low rDS on Small-Signal MOSFETs TMOS Single N-Channel Field Effect Transistors Part of the GreenLine Portfolio of devices with energy– conserving traits. N–CHANNEL ENHANCEMENT–MODE

BC237

Abstract: 31 MOSFET sot-323
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA  Low rDS on Small-Signal MOSFETs TMOS Single N-Channel Field Effect Transistors Part of the GreenLine Portfolio of devices with energy–conserving traits.  These miniature surface mount MOSFETs utilize Motorola’s