A01001 Search Results
A01001 Price and Stock
Kingston Technology Company EMMC32G-TS0A-01001IC FLASH 256GBIT EMMC 153WFBGA |
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EMMC32G-TS0A-01001 | Tray | 71 | 1 |
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EMMC32G-TS0A-01001 | Tray | 6 Weeks | 1 |
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EMMC32G-TS0A-01001 |
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EMMC32G-TS0A-01001 | 13 Weeks | 152 |
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Amphenol Sine Systems TA0100146TOOL HAND CRIMPER 16-26AWG SIDE |
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TA0100146 | Bulk | 3 | 1 |
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Amphenol Communications Solutions MDT320A01001CONN M.2 FMALE 67POS 0.020 GOLD |
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MDT320A01001 | 1,766 | 900 |
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Amphenol Communications Solutions MDT180A01001CONN M.2 FMALE 67POS 0.020 GOLD |
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MDT180A01001 | Cut Tape |
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MDT180A01001 | Reel | 7,500 |
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Amphenol Communications Solutions MDT420A01001CONN M.2 FMALE 67POS 0.020 GOLD |
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MDT420A01001 | Reel | 4,000 |
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A01001 Datasheets Context Search
Catalog Datasheet | Type | Document Tags | |
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Contextual Info: W94AD6KB / W94AD2KB 1Gb Mobile LPDDR Table of Contents1. 2. 3. 4. 5. 6. 7. 8. GENERAL DESCRIPTION . 4 FEATURES . 4 |
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W94AD6KB W94AD2KB A01-004 | |
w989d2kb
Abstract: smd 6ac
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W989D6KB W989D2KB 512Mb 304-words 166MHz. A01-002 w989d2kb smd 6ac | |
W641GG2KB
Abstract: gddr3 schematic WBGA-136 W641GG2
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W641GG2KB A01-001 W641GG2KB gddr3 schematic WBGA-136 W641GG2 | |
Contextual Info: W988D6FB / W988D2FB 256Mb Mobile LPSDR 1. GENERAL DESCRIPTION The Winbond 256Mb Low Power SDRAM is a low power synchronous memory containing 268,435,456 memory cells fabricated with Winbond high performance process technology. It is designed to consume less power than the ordinary SDRAM with low power features essential |
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W988D6FB W988D2FB 256Mb 166MHz. A01-004 | |
Contextual Info: Operating and Service Manual Agilent 346A/B/C Noise Source Including Options 001, 002, and 004 Serial Numbers Instruments with serial prefixes 4124A and above are supplied with the noise source ENR data preloaded on diskette -see Chapters 3 & 4. Manufacturing Part Number: 00346-90148 |
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46A/B/C | |
W989D6KBGX
Abstract: W989D2KBJX
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W989D6KB W989D2KB 512Mb 304-words 166MHz. A01-003 W989D6KBGX W989D2KBJX | |
PEC 4179 DIODE
Abstract: 327879-001US
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327879-001US LK100 PEC 4179 DIODE 327879-001US | |
HCCPHPE24BKA90F
Abstract: FCI sicma 24 HCCPHPE24BGYB90F HCCPHPE24BCN90F HCCPHPE24 PC249S0005 211PC249S8005 210 A010019 sicma PBT connector Sicma
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HCCPHPE24BCN90F* HCCPHPE24BCN90F HCCPHPE24BCN90F HCCPHPE24BKA90F HCCPHPE24BGYB90F PC249S0005 PC249S1005 PC249S8005 FCI sicma 24 HCCPHPE24 211PC249S8005 210 A010019 sicma PBT connector Sicma | |
PC063S0003Contextual Info: Coupling connectors SICMA-2 6 way sealed coupling housings for 2.8 mm terminals Features • Double row 5 x 6 mm pitch • Circumferential interface seal • Waterproof application with single wire seal • Corrugated tube locking device • Plastic locking feature |
OCR Scan |
063S0003 PC063S1003 063S8003 PL063S0003 PL063S1003 PL063S8003 A010019 210S045 210S047 PC063S0003 | |
Contextual Info: W957D6HB 128Mb Async./Burst/Sync./A/D MUX 1. GENERAL DESCRIPTION Winbond x16 ADMUX products are high-speed, CMOS pseudo-static random access memory developed for lowpower, portable applications. The device has a DRAM core organized. These devices are a variation of the industrystandard Flash control interface, with a multiplexed address/data bus. The multiplexed address and data functionality |
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W957D6HB 128Mb A01-004 | |
Contextual Info: W94AD6KB / W94AD2KB 1Gb Mobile LPDDR 1. GENERAL DESCRIPTION W94AD6KB / W94AD2KB is a high-speed Low Power double data rate synchronous dynamic random access memory LPDDR SDRAM , An access to the LPDDR SDRAM is burst oriented. Consecutive memory location in one page can be accessed at a burst length of 2, 4, 8 and 16 |
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W94AD6KB W94AD2KB W94AD2KB A01-002 | |
Contextual Info: W989D6CB / W989D2CB 512Mb Mobile LPSDR 1. GENERAL DESCRIPTION The Winbond 512Mb Low Power SDRAM is a low power synchronous memory containing 536,870,912 memory cells fabricated with Winbond high performance process technology. It is designed to consume less power than the ordinary SDRAM with low power features essential |
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W989D6CB W989D2CB 512Mb 304-words 166MHz. A01-006 | |
842 317 SO8Contextual Info: Intel Communications Chipset 89xx Series Datasheet June 2013 Order Number: 327879-002US INFORMATION IN THIS DOCUMENT IS PROVIDED IN CONNECTION WITH INTEL® PRODUCTS. NO LICENSE, EXPRESS OR IMPLIED, BY ESTOPPEL OR OTHERWISE, TO ANY INTELLECTUAL PROPERTY RIGHTS IS GRANTED BY THIS DOCUMENT. EXCEPT AS PROVIDED IN INTEL'S TERMS AND CONDITIONS |
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327879-002US LK100 842 317 SO8 | |
w949d6cbh
Abstract: WINBOND cross reference W949D6CB winbond Mobile LPDDR W949D6CBHX5E winbond W949D6CB W949D6
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W949D6CB W949D2CB 512Mb A01-006 w949d6cbh WINBOND cross reference winbond Mobile LPDDR W949D6CBHX5E winbond W949D6CB W949D6 | |
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Contextual Info: W987D6HB / W987D2HB 128Mb Mobile LPSDR 1. GENERAL DESCRIPTION The Winbond 128Mb Low Power SDRAM is a low power synchronous memory containing 134,217,728 memory cells fabricated with Winbond high performance process technology. It is designed to consume less power than the ordinary SDRAM with low power features essential |
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W987D6HB W987D2HB 128Mb 166MHz. A01-004 | |
W989D2KB
Abstract: smd 6ac W989D6 W989D2K
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W989D6KB W989D2KB 512Mb 304-words 166MHz. A01-001 W989D2KB smd 6ac W989D6 W989D2K | |
W989
Abstract: W989D2CB W989D6CB
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W989D6CB W989D2CB 512Mb A01-004 W989 W989D2CB | |
6822 n9
Abstract: 700TC gddr3 schematic cmd transistor marking cy SEN 1327 W641GG2JB CY 6152
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W641GG2JB A01-002 6822 n9 700TC gddr3 schematic cmd transistor marking cy SEN 1327 W641GG2JB CY 6152 | |
w949d6cbh
Abstract: A01-007 winbond W949D6CB W949D2CBJX WINBOND cross reference winbond 2301
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W949D6CB W949D2CB 512Mb A01-007 w949d6cbh A01-007 winbond W949D6CB W949D2CBJX WINBOND cross reference winbond 2301 | |
W948D2F
Abstract: winbond Mobile LPDDR W948D2FBJX6E
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W948D6FB W948D2FB 256Mb A01-003 W948D2F winbond Mobile LPDDR W948D2FBJX6E | |
W988D6F
Abstract: W988D2F
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W988D6FB W988D2FB 256Mb A01-002 W988D6F W988D2F | |
A01-005
Abstract: W989D2CBJX7E winbond mobile dram
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W989D6CB W989D2CB 512Mb A01-005 A01-005 W989D2CBJX7E winbond mobile dram | |
Contextual Info: W949D6DB / W949D2DB 512Mb Mobile LPDDR Table of Contents1. GENERAL DESCRIPTION . 4 2. FEATURES . 4 |
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W949D6DB W949D2DB 512Mb A01-001 | |
Contextual Info: W94AD6KB / W94AD2KB 1Gb Mobile LPDDR 1. GENERAL DESCRIPTION W94AD6KB / W94AD2KB is a high-speed Low Power double data rate synchronous dynamic random access memory LPDDR SDRAM , An access to the LPDDR SDRAM is burst oriented. Consecutive memory location in one page can be accessed at a burst length of 2, 4, 8 and 16 |
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W94AD6KB W94AD2KB W94AD2KB A01-003 |