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    A022 Search Results

    A022 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    DPA02257RGBR
    Texas Instruments Low Input Voltage, 6A Synchronous Step-Down SWIFT™ Converter for DDR Memory Termination 20-VQFN -40 to 85 Visit Texas Instruments Buy
    TPS7A0223PDQNR
    Texas Instruments 200mA, nanopower-IQ (25 nA), low-dropout (LDO) voltage regulator with enable 4-X2SON -40 to 125 Visit Texas Instruments Buy
    TPS7A0228PDQNR
    Texas Instruments 200mA, nanopower-IQ (25 nA), low-dropout (LDO) voltage regulator with enable 4-X2SON -40 to 125 Visit Texas Instruments Buy
    TPS7A0223PDBVR
    Texas Instruments 200mA, nanopower-IQ (25 nA), low-dropout (LDO) voltage regulator with enable 5-SOT-23 -40 to 125 Visit Texas Instruments Buy
    TPS7A0228DQNR
    Texas Instruments 200mA, nanopower-IQ (25 nA), low-dropout (LDO) voltage regulator with enable 4-X2SON -40 to 125 Visit Texas Instruments Buy
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    A022 Price and Stock

    Texas Instruments TPS7A0228PDQNR

    IC REG LINEAR 2.8V 200MA 4-X2SON
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    DigiKey () TPS7A0228PDQNR Digi-Reel 10,973 1
    • 1 $0.67
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    • 100 $0.3711
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    TPS7A0228PDQNR Cut Tape 10,973 1
    • 1 $0.67
    • 10 $0.473
    • 100 $0.3711
    • 1000 $0.3175
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    TPS7A0228PDQNR Reel 9,000 3,000
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    • 10000 $0.265
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    Vyrian TPS7A0228PDQNR 17,986
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    TDK Electronics B32652A0223J189

    CAP FILM 0.022UF 5% 1KVDC RADIAL
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    DigiKey () B32652A0223J189 Cut Tape 5,948 1
    • 1 $0.89
    • 10 $0.605
    • 100 $0.4382
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    B32652A0223J189 Reel 3,900 1,300
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    TME B32652A0223J189 1,275 1
    • 1 $0.698
    • 10 $0.46
    • 100 $0.346
    • 1000 $0.276
    • 10000 $0.184
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    ITT Interconnect Solutions IT04-12PA-022-N

    CONN RCPT HSG 12POS
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    DigiKey IT04-12PA-022-N Bulk 5,000 1
    • 1 $3.31
    • 10 $2.813
    • 100 $2.3907
    • 1000 $2.03221
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    Interstate Connecting Components IT04-12PA-022-N 3,887
    • 1 $0.8142
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    • 100 $0.7745
    • 1000 $0.7056
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    Cornell Dubilier Electronics Inc 381LR681M250A022

    CAP ALUM 680UF 20% 250V SNAP TH
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    DigiKey 381LR681M250A022 Bulk 2,043 1
    • 1 $6.36
    • 10 $4.492
    • 100 $3.54875
    • 1000 $3.3625
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    Cornell Dubilier Electronics Inc BLH505K451A022

    DC LINK, THB, 85/85, AEC-Q200
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    DigiKey BLH505K451A022 Bulk 1,005 1
    • 1 $2.47
    • 10 $1.77
    • 100 $1.4536
    • 1000 $1.1317
    • 10000 $1.075
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    Mouser Electronics BLH505K451A022 3,380
    • 1 $2.47
    • 10 $1.77
    • 100 $1.46
    • 1000 $1.45
    • 10000 $1.07
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    Newark BLH505K451A022 Bulk 382 1
    • 1 $1.34
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    Richardson RFPD BLH505K451A022 150
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    IBS Electronics BLH505K451A022 4,050 80
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    • 1000 $1.6875
    • 10000 $1.2
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    A022 Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    Contextual Info: Advanced Control Com ponents 20 MERIDIAN ROAD EATONTOWN, N.J. 07724 PHONE: 732 460-0212 FAX: (732)460-0214 W W W.ADVANCED-CONTROL.COM Inc. PRODUCT SPECIFICATION PART NUMBER: ACDL-A022 DESCRIPTION: DETECTOR LOG VIDEO AMPLIFIER, DC COUPLED & CW IMMUNE FREQUENCY RANGE:


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    ACDL-A022 ACDL-A022 PDF

    Contextual Info: Issue No. : 12-SWDW-A022 October 30, 2012 Date of Issue : Classification : • New □ Change For General Distribution PRODUCT SPECIFICATION FOR APPROVAL Product Description Customers Part Number Product Part Number Country of Origin


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    12-SWDW-A022 ESE11MV9T PDF

    Contextual Info: Protection Relays & Controls ARC Detectors A0220 Description Arc Detecting Point Sensor The A0220 Arc Detector is a photo electric sensor. It has a sensitive area of 180˚. Sensor signal is a mA current signal of 0.5 mA / klux. The sensor includes 10 m of shielded


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    A0220 A0220 D0100, D0900, D0910, D0920, D1000 PGR-8800 PDF

    Contextual Info: N AMER PHILIPS/DISCRETE 2SE D • bb53T31 a022b51 fi ■ BYV79 SERIES A 7 1 0 3 - 1 7 ULTRA FAST RECOVERY RECTIFIER DIODES Glass-passivated, high-efficiency epitaxial rectifier diodes in plastic envelopes, featuring low forward voltage drop, ultra fast reverse recovery times with very low stored charge and soft-recovery


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    bb53T31 a022b51 BYV79 T-03-17 PDF

    i800

    Abstract: 97-0008 3069B 27i0
    Contextual Info: 10 N o. OF ENG. No. PART No. CCTS. I0 3069-A02 -A022 -A03 -A032 -A04 -A042 -A05 -A052 -A06 -A062 -A07 -A072 -A08 -A082 -A09 -A092 -A 10 -AI02 -All -A II2 I2 I3 I4 I5 I6 IT I8 I9 20 - AI 2 -AI22 -AI3 -AI32 -AI4 -AI42 -AI5 -AI52 -AI6 -AI62 -AI7 -AI72 - AI 8


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    3069-A02 -A022 -A032 -A042 -A052 -A062 -A072 -A082 -A092 -AI02 i800 97-0008 3069B 27i0 PDF

    7408, 7404, 7486, 7432

    Abstract: RF400U functional diagram of 7400 and cd 4011 ls 7404 180 nm CMOS standard cell library TEXAS INSTRUMENTS 74191 4BITS s273 buffer 74374 7408 CMOS cmos 7404
    Contextual Info: TGC100 Series CMOS Gate Arrays RELEASE 3.0, REVISED JANUARY 1990 • Twelve Arrays with up to 26K Available Gates • Fast Prototype Turnaround Time • Extensive Design Support - Design Libraries Compatible with Daisy, Valid, and Mentor CAE Systems - Tl Regional ASIC Design Centers


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    TGC100 20-mA Sink/12mA TDB10LJ 120LJ TDC11LJ TDN11LJ 100MHz 7408, 7404, 7486, 7432 RF400U functional diagram of 7400 and cd 4011 ls 7404 180 nm CMOS standard cell library TEXAS INSTRUMENTS 74191 4BITS s273 buffer 74374 7408 CMOS cmos 7404 PDF

    Contextual Info: DRAW ING No.: M 4 0 - 4 0 1 IF IN D O U BT - A S K XX 4 6 R X B +0.20— NOT TO S C A LE 1 6 + 0 .0 5 .0+0.05 i LO o o +l LO O +l O CIRCUIT 1 0. 20 PHOSPHOR BRONZE SEMI-GLOSS TIN t LO <o o +1 -X2.Ç 0 .7 + 0 .0 5 - GO r A d 1.2+0.05- PCB LAYOUT ro X d X NO. OR


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    PDF

    M40-4010446R

    Abstract: M40-4012046R 40113 M40-4010346R M40-4010546R M40-4010646R M40-4010746R M40-4010846R M40-4011046R 401104
    Contextual Info: DRAWING No.: M40-401 IF IN DOUBT - ASK XX 46R NOT TO SCALE THIRD ANGLE PROJECTION ALL DIMENSIONS IN mm -1.0±0.05 1.5 REF- -0.6+0.05 SPECIFICATIONS: Y LO o LO MATERIAL: - Y O LO LO MOULDING: NYLON 9T, U L94V-0 CONTACT: PHOSPHOR BRONZE, T=0.2MM o FINISH:—


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    M40-401 UL94V-0 M40-4010446R M40-4012046R 40113 M40-4010346R M40-4010546R M40-4010646R M40-4010746R M40-4010846R M40-4011046R 401104 PDF

    VN10K

    Contextual Info: VN10K Die Specification Pad Layout 1 0,0 2 Backside: Drain Die Specifications Die Dimensions Device Length Width Thickness mils Back Side Metal 30 30 8.0 ± 1.0 Au 1 (mils) VN10K 1 (mils) Back Side Bonding Pad Material Bond Wire Bond Wire Size Drain Al/Cu/Si


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    VN10K VN10K A022009 PDF

    2N7000

    Contextual Info: 2N7000 Die Specification Pad Layout 1 0,0 2 Backside: Drain Die Specifications Die Dimensions Device Length Width Thickness mils Back Side Metal 30 30 8.0 ± 1.0 Au 1 (mils) 2N7000 1 (mils) Back Side Bonding Pad Material Bond Wire Bond Wire Size Drain


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    2N7000 2N7000 A022009 PDF

    TN2124

    Contextual Info: TN2124 Die Specification Pad Layout 1 0,0 2 Backside: Drain Die Specifications Die Dimensions Device Length Width Thickness mils Back Side Metal 30 30 8.0 ± 1.0 Au 1 (mils) TN2124 1 (mils) Back Side Bonding Pad Material Bond Wire Bond Wire Size Drain


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    TN2124 TN2124 A022009 PDF

    R5F5631

    Abstract: R5F563NBDDFP A083H RX631 100-6 p86 A161H ir127 capacitor PMR 202 DM IPR200 c04f
    Contextual Info: Features RX63N Group, RX631 Group Renesas MCUs R01DS0098EJ0100 Rev.1.00 Jun 13, 2012 100-MHz 32-bit RX MCU, on-chip FPU, 165 DMIPS, up to 2-MB flash memory, Ethernet MAC, full-speed USB 2.0 host/function/OTG interface, various communications interfaces including CAN, 10- & 12-bit A/D


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    RX63N RX631 100-MHz 32-bit 12-bit R01DS0098EJ0100 PLQP0176KB-A PLQP0144KA-A R5F5631 R5F563NBDDFP A083H 100-6 p86 A161H ir127 capacitor PMR 202 DM IPR200 c04f PDF

    Contextual Info: NECES001 C P20K 0 .8 -M IC R O N NEC Electronics Inc. fpgas February 1993 Description Figure 1. CP20K FPGAs NEC Electronics Inc. and Crosspoint Solutions, Inc. have joined forces to offer to system designers an expedient way to prototype in Field Programmable Gate Arrays


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    NECES001 CP20K RAM8x16* RAM16x16* RAM32x16* RAM8x32* 16x32* RAM32x4* RAM64x4* PDF

    EM78

    Abstract: UIT660N elan EM78 EM78813 Usb m015 a006 c8051 microcontroller Workout 0X00 EM78815
    Contextual Info: EM78 Series Microcontrollers INTEGRATED DEVELOPMENT ENVIRONMENT USER’S GUIDE Doc. Version 1.0 Applicable to eUIDE Version 1.0 & later ELAN MICROELECTRONICS CORP. October 2009 Trademark Acknowledgments IBM is a registered trademark and PS/2 is a trademark of IBM.


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    UIT660N UIT660N, IT660N IT660N, EM78 UIT660N elan EM78 EM78813 Usb m015 a006 c8051 microcontroller Workout 0X00 EM78815 PDF

    R5F51115AGFL

    Abstract: R5F51113ADNF R5F51113ADFM
    Contextual Info: Datasheet RX111 Group Renesas MCUs 32 MHz 32-bit RX MCUs, 50 DMIPS, up to 512 Kbytes of flash memory, USB 2.0 full-speed host/function/OTG, up to 6 comms channels, 12-bit A/D, 8-bit D/A, RTC R01DS0190EJ0120 Rev.1.20 Sep 29, 2014 Features • 32-bit RX CPU core


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    RX111 32-bit 12-bit R01DS0190EJ0120 64-bit 32-bit R5F51115AGFL R5F51113ADNF R5F51113ADFM PDF

    Contextual Info: User’s Manual 32 Cover RX630 Group User’s Manual: Hardware RENESAS 32-Bit MCU RX Family / RX600 Series All information contained in these materials, including products and product specifications, represents information on the product at the time of publication and is subject to change by


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    RX630 32-Bit RX600 R01UH0040EJ0160 PDF

    Contextual Info: HV20822 16-Channel High Voltage Analog Switch Features ► ► ► ► ► ► ► ► ► General Description HVCMOS technology for high performance 220V operating conditions Output on-resistance typically 22Ω 5.0V and 12.0V CMOS logic compatibility Very low quiescent current consumption 10µA


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    HV20822 16-Channel -45dB HV20822 16-channel, MS-026, A022208 PDF

    IS49NLS18320

    Contextual Info: IS49NLS96400,IS49NLS18320 576Mb x9, x18 Separate I/O RLDRAM 2 Memory ADVANCED INFORMATION FEBRUARY 2012 FEATURES • • • • • • • • • 533MHz DDR operation (1.067 Gb/s/pin data rate) 38.4 Gb/s peak bandwidth (x18 Separate I/O at 533 MHz clock frequency)


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    IS49NLS96400 IS49NLS18320 576Mb 533MHz 533MHz) IS49NLS18320-25BLI IS49NLS96400-33BI IS49NLS96400-33BLI IS49NLS18320-33BI IS49NLS18320-33BLI IS49NLS18320 PDF

    BVA16

    Abstract: BZV15 cx fuse A0420
    Contextual Info: POLYSNAP POWER INLET MODULES C14 Inlet Twin Fuse - Standard Filter EMI FILTER OPTIONS ᔢ For Polysnap modules BZV15, BZV16, BZH13, BZH14, BZH15, BZH16, BZH21, BZH22, BVA15, BVA16, BVB15, BVB16 PF0033 style twin fuse IEC inlet ᔢ Using PS26/A filter


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    BZV15, BZV16, BZH13, BZH14, BZH15, BZH16, BZH21, BZH22, BVA15, BVA16, BVA16 BZV15 cx fuse A0420 PDF

    15nf

    Abstract: PS25 PX0587 PX0588
    Contextual Info: FiltersSection - 2010:FiltersSection - 2010 8/6/10 16:57 Page 142 MAINS FILTERS IEC Power Inlets Flange and Snap Fit Twin Fused PANEL MOUNTING ᔢ 2 or 4 Amp Current Rating ᔢ Twin Fused ᔢ Optional Additional Components ᔢ 2.8 or 6.3mm tabs PS25/A SNAP FIT


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    PS25/A PS26/A PS26/Axx PX0587, PX0587/SE, PX0588 15nf PS25 PX0587 PX0588 PDF

    HY53C464LS

    Abstract: HY53C464F hy53c464 hy53c464lf HY53C464LF70 HY53C464S An-313
    Contextual Info: HY53C464 Seríes " H Y U N D A I 64K X 4-bit CMOS DRAM DESCRIPTION Hie HY53C464 is fast dynamic RAM organized 65,536 x 4-bit. The HY53C464 utilizes Hyundai’s CMOS silicon gate process technology as well as advanced circuit techniques to provide wide operating margins to the users.


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    HY53C464 330mil 18pin CMO442) 335ie P-021 A02-20-MA HY53C464LS HY53C464F hy53c464lf HY53C464LF70 HY53C464S An-313 PDF

    Contextual Info: White Electronic Designs W78M32V-XBX ADVANCED* 8Mx32 Flash 3.3V Page Mode Simultaneous Read/Write Operations Multi-Chip Package FEATURES Access Times of 90, 100, 120ns Unlock Bypass Program command Packaging • 159 PBGA, 13x22mm – 1.27mm pitch • Reduces overall programming time when issuing


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    W78M32V-XBX 8Mx32 120ns 13x22mm PDF

    10001000XXX

    Abstract: PWA with 555 W78M32V-XBX SA139-SA142 SA175-SA178 SA187-SA190 SA163-SA166
    Contextual Info: White Electronic Designs W78M32V-XBX 8Mx32 Flash 3.3V Page Mode Simultaneous Read/Write Operation Multi-Chip Package FEATURES Access Times of 70, 90, 100, 120ns Unlock Bypass Program command Packaging • 159 PBGA, 13x22mm – 1.27mm pitch • Reduces overall programming time when issuing


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    W78M32V-XBX 8Mx32 120ns 13x22mm 10001000XXX PWA with 555 W78M32V-XBX SA139-SA142 SA175-SA178 SA187-SA190 SA163-SA166 PDF

    Contextual Info: TP2435 P-Channel Enhancement Mode Vertical DMOS FETs Features General Description This low threshold enhancement-mode normally-off transistor utilizes a vertical DMOS structure and Supertex’s well-proven silicon-gate manufacturing process. This combination produces a device with the power handling


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    TP2435 DSFP-TP2435 A022309 PDF