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    Part ECAD Model Manufacturer Description Download Buy
    G846A10000C1EU Amphenol Communications Solutions Board mount - Header Plug - Wire to Board 1.0mm Pitch Vertical SMT,1x10Pin,Matte Tin,NY46 Visit Amphenol Communications Solutions
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    A10000 Price and Stock

    Cree, Inc. MLBAWT-A1-0000-000WE3

    LED XLAMP COOL WHITE 5000K SMD
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey MLBAWT-A1-0000-000WE3 Digi-Reel 6,128 1
    • 1 $0.28
    • 10 $0.266
    • 100 $0.238
    • 1000 $0.20272
    • 10000 $0.20272
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    MLBAWT-A1-0000-000WE3 Cut Tape 6,128 1
    • 1 $0.28
    • 10 $0.266
    • 100 $0.238
    • 1000 $0.20272
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    MLBAWT-A1-0000-000WE3 Reel 4,200 1,400
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    Avnet Silica MLBAWT-A1-0000-000WE3 8 Weeks 1,400
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    Maritex MLBAWT-A1-0000-000WE3 198
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    • 1000 $0.156
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    Cree, Inc. MLBAWT-A1-0000-000W51

    LED XLAMP COOL WHITE 6500K SMD
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    DigiKey MLBAWT-A1-0000-000W51 Digi-Reel 1,690 1
    • 1 $0.26
    • 10 $0.247
    • 100 $0.221
    • 1000 $0.18824
    • 10000 $0.18824
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    MLBAWT-A1-0000-000W51 Cut Tape 1,690 1
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    • 10 $0.247
    • 100 $0.221
    • 1000 $0.18824
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    MLBAWT-A1-0000-000W51 Reel 1,400 1,400
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    Avnet Silica MLBAWT-A1-0000-000W51 8 Weeks 1,400
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    Cree, Inc. MLBAWT-A1-0000-000VE8

    LED XLAMP WARM WHT 2700K SMD
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    DigiKey MLBAWT-A1-0000-000VE8 Digi-Reel 1,390 1
    • 1 $0.28
    • 10 $0.266
    • 100 $0.238
    • 1000 $0.20272
    • 10000 $0.20272
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    MLBAWT-A1-0000-000VE8 Cut Tape 1,390 1
    • 1 $0.28
    • 10 $0.266
    • 100 $0.238
    • 1000 $0.20272
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    Maritex MLBAWT-A1-0000-000VE8 1,195
    • 1 $0.17
    • 10 $0.17
    • 100 $0.146
    • 1000 $0.134
    • 10000 $0.122
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    Cree, Inc. MLEAMB-A1-0000-000W01

    LED XLAMP MLE AMB 590NM SMD
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    DigiKey MLEAMB-A1-0000-000W01 Cut Tape 598 1
    • 1 $0.9
    • 10 $0.855
    • 100 $0.765
    • 1000 $0.6516
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    MLEAMB-A1-0000-000W01 Digi-Reel 598 1
    • 1 $0.9
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    • 100 $0.765
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    Avnet Silica MLEAMB-A1-0000-000W01 8 Weeks 1,400
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    Cree, Inc. MLBAWT-A1-0000-000WE5

    LED XLAMP NEUTRAL WHT 4000K SMD
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    DigiKey MLBAWT-A1-0000-000WE5 Digi-Reel 520 1
    • 1 $0.3
    • 10 $0.285
    • 100 $0.255
    • 1000 $0.2172
    • 10000 $0.2172
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    Maritex MLBAWT-A1-0000-000WE5 1,378
    • 1 $0.102
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    • 100 $0.087
    • 1000 $0.078
    • 10000 $0.075
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    Find more A10000 price and stock on Findchips.com

    A10000 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    electronic parts dictionary

    Abstract: SRA10000 A1000 AD85S 640X480 HC10 genius sra100
    Text: KMJ1H83AA このたびは「電子辞書 SR-A10000 / SL790A」をお買上げいただきまして、 まことにありがとうございます。 ご使用になる前に、 「安全上のご注意」をよくお読みのうえ、正しくお使いください。


    Original     		PDF KMJ1H83AA SR-A10000 SL790A electronic parts dictionary SRA10000 A1000 AD85S 640X480 HC10 genius sra100

    SA6954

    Abstract: S29WS064N S29WS128N S29WS256N WS128N FFC00
    Text: S29WSxxxN MirrorBit Flash Family S29WS256N, S29WS128N, S29WS064N 256/128/64 Megabit 16/8/4 M x 16-Bit CMOS 1.8 Volt-only Simultaneous Read/Write, Burst Mode Flash Memory PRELIMINARY Distinctive Characteristics Architectural Advantages „ Single 1.8 volt read, program and erase (1.70 to


    Original     		PDF S29WSxxxN S29WS256N, S29WS128N, S29WS064N 16-Bit) SA6954 S29WS064N S29WS128N S29WS256N WS128N FFC00

    C000H-DFFFH

    Abstract: 24Blocks FB0000h-FBFFFFh 9F0000h-9FFFFFh C10000h-C1FFFFh FF4000h-FF5FFFh 8a0000h8affffh
    Text: ADVANCED INFORMATION MX29LW128T/B/U/D 128M-BIT [16M x 8 / 8M x 16] SINGLE VOLTAGE 3V ONLY PAGE MODE FLASH MEMORY FEATURES GENERAL • 8M word x 16 Bit /16M Byte x 8 Bit switchable Power Supply Voltage - VCC=2.7V to 3.6V for read, erase and program operation


    Original     		PDF MX29LW128T/B/U/D 128M-BIT JAN/27/2003 MAR/28/2003 MAY/16/2003 MAY/29/2003 C000H-DFFFH 24Blocks FB0000h-FBFFFFh 9F0000h-9FFFFFh C10000h-C1FFFFh FF4000h-FF5FFFh 8a0000h8affffh

    JESD97

    Abstract: M29DW128F TSOP56 6C80
    Text: M29DW128F 128 Mbit 16Mb x8 or 8Mb x16, Multiple Bank, Page, Boot Block 3V supply Flash memory Feature summary • Supply voltage – VCC = 2.7V to 3.6V for Program, Erase and Read – VPP =12V for Fast Program (optional) ■ Asynchronous Random/Page Read


    Original     		PDF M29DW128F TSOP56 32-Word 16Mbit 48Mbit 16Mbit TBGA64 JESD97 M29DW128F TSOP56 6C80

    SA452

    Abstract: SA336 SA424 120R S29GL512N SA487 EE8000 a78000a7ffff c58000c5ffff SA4871
    Text: Am29LV2562M Data Sheet RETIRED PRODUCT This product has been retired and is not available for designs. For new and current designs, S29GL512N supersedes Am29LV2562M and is the factory-recommended migration path. Please refer to the S29GL512N Data Sheet for specifications and ordering information. Availability of this


    Original     		PDF Am29LV2562M S29GL512N S29GL512N SA452 SA336 SA424 120R SA487 EE8000 a78000a7ffff c58000c5ffff SA4871

    S29WS256N

    Abstract: S71WS512NE0BFWZZ
    Text: S71WS512NE0BFWZZ Stacked Multi-Chip Product MCP Flash Memory and pSRAM CMOS 1.8 Volt, Simultaneous Operation, Burst Mode Flash Memory and Pseudo-Static RAM ADVANCE INFORMATION DISTINCTIVE CHARACTERISTICS GENERAL DESCRIPTION MCP Features The S71WS512 Series is a product line of stacked Multi-Chip


    Original     		PDF S71WS512NE0BFWZZ S71WS512 S29WS256N 54MHz 128Mb 96-ball S71WS512NE0BFWZZ S29WS256N

    M29W128FL

    Abstract: Memory Protection Devices M29W128FH JESD97 M29W128F TSOP56
    Text: M29W128FH M29W128FL 128 Mbit 8Mb x 16 or 16Mb x 8, Page, Uniform Block 3V Supply Flash Memory Feature summary • Supply voltage – VCC = 2.7 to 3.6V for Program, Erase and Read – VPP =12V for Fast Program (optional) ■ Asynchronous Random/Page Read


    Original     		PDF M29W128FH M29W128FL Words/16 TSOP56 32-Word 64-Bytes) M29W128FL Memory Protection Devices M29W128FH JESD97 M29W128F TSOP56

    FL128P

    Abstract: SPANSION FL128P
    Text: S25FL128P 128 Megabit CMOS 3.0 Volt Flash Memory with 104-MHz SPI Serial Peripheral Interface Bus Data Sheet S25FL128P Cover Sheet Notice to Readers: This document states the current technical specifications regarding the Spansion product(s) described herein. Each product described herein may be designated as Advance Information,


    Original     		PDF S25FL128P 104-MHz S25FL128P FL128P SPANSION FL128P

    samsung electronics ba41

    Abstract: BA175
    Text: Preliminary FLASH MEMORY K8C56 57 15ET(B)M 256Mb M-die MLC NOR Specification INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE. NOTHING IN THIS DOCUMENT SHALL BE CONSTRUED AS GRANTING ANY LICENSE,


    Original     		PDF K8C56 256Mb A0-A23 000000FH 000001FH 000002FH 0000000H samsung electronics ba41 BA175

    BA379

    Abstract: BA377 BA339 BA438 BA429 BA416 ba-302 BA512 BA308 ba324
    Text: K8A5615ET B A NOR FLASH MEMORY Document Title 256M Bit (16M x16) Synchronous Burst , Multi Bank NOR Flash Memory Revision History Revision No. History Draft Date Remark 0.0 Advanced March 15, 2004 Advance 0.1 Revision - Change the speed code 7B : 90ns @54MHz -> 7B : 88.5ns @54MHz


    Original     		PDF K8A5615ET 54MHz 22ECH 22FCH 22EDH 22FDH K8A56156ET 70ns--- BA379 BA377 BA339 BA438 BA429 BA416 ba-302 BA512 BA308 ba324

    NS064N

    Abstract: S29NS128N S29NS256N VDC048 S29NS256
    Text: S29NSxxxN MirrorBitTM Flash Family S29NS256N, S29NS128N, S29NS064N 256/128/64 Megabit 16/8/4M x 16-bit , CMOS 1.8 Volt-only Simultaneous Read/Write, Multiplexed, Burst Mode Flash Memory ADVANCE INFORMATION Distinctive Characteristics „ Single 1.8 volt read, program and erase (1.70


    Original     		PDF S29NSxxxN S29NS256N, S29NS128N, S29NS064N 16/8/4M 16-bit) 32-Word S29NS256/128/64N NS064N S29NS128N S29NS256N VDC048 S29NS256

    JESD97

    Abstract: M29DW128F TSOP56 esn 234 D2578 5PWA
    Text: M29DW128F 128 Mbit 16Mb x8 or 8Mb x16, Multiple Bank, Page, Boot Block 3V supply Flash memory Features summary • Supply Voltage – VCC = 2.7V to 3.6V for Program, Erase and Read – VCCQ= 1.65V to 3.6V for Input/Output – VPP =12V for Fast Program (optional)


    Original     		PDF M29DW128F TSOP56 32-Word TBGA64 16Mbit 48Mbit 16Mbit JESD97 M29DW128F TSOP56 esn 234 D2578 5PWA

    IS29GL256

    Abstract: No abstract text available
    Text: IS29GL256 256 Megabit 32768K x 8-bit / 16384K x 16-bit Flash Memory Page mode Flash Memory, CMOS 3.0 Volt-only FEATURES • Single power supply operation - Full voltage range: 2.7 to 3.6 volts read and write operations • High performance - Access times as fast as 90 ns


    Original     		PDF IS29GL256 32768K 16384K 16-bit) 8-word/16-byte 32-word/64-byte 128-word/256-byte 8-word/16byte IS29GL256 IS29GL256-JTLE

    EN25Q128

    Abstract: cFeon* SPI Flash EN25 C20F Dual Output fast
    Text: EN25Q128 EN25Q128 128 Megabit Serial Flash Memory with 4Kbyte Uniform Sector FEATURES • Software and Hardware Write Protection: - Write Protect all or portion of memory via software - Enable/Disable protection with WP# pin • Single power supply operation


    Original     		PDF EN25Q128 M-bit/16 K-byte/65 104MHz 80MHz 24-ball EN25Q128 cFeon* SPI Flash EN25 C20F Dual Output fast

    S25FL129

    Abstract: S25FL129P s25fl129p0 FL129P footprint WSON S25FL128P SA255 SCK FAB024 footprint WSON-8 reader sa223 FAC024
    Text: S25FL129P 128-Mbit CMOS 3.0 Volt Flash Memory with 104-MHz SPI Serial Peripheral Interface Multi I/O Bus Data Sheet S25FL129P Cover Sheet Notice to Readers: This document states the current technical specifications regarding the Spansion product(s) described herein. Each product described herein may be designated as Advance Information,


    Original     		PDF S25FL129P 128-Mbit 104-MHz S25FL129P S25FL129 s25fl129p0 FL129P footprint WSON S25FL128P SA255 SCK FAB024 footprint WSON-8 reader sa223 FAC024

    asme SA388

    Abstract: gl128m A2113 S29GL256 E78000 S29GL128N TSOP56 S29GL128N sa32sa35 S29GLxxxM BGA-63
    Text: S29GL-M MirrorBitTM フラッシュファミリ S29GL256M，S29GL128M，S29GL064M，S29GL032M 256M ビット，128M ビット，64M ビット，および 32M ビット， 3.0V 単一電源，ページモードフラッシュメモリ 0.23µm MirrorBit プロセステクノロジ


    Original     		PDF S29GL-M S29GL256MS29GL128MS29GL064MS29GL032M S29GL128MS29GL128N S29GL256MS29GL256N S29GLxxxN 00-B-5 S29GL032M LAA064 asme SA388 gl128m A2113 S29GL256 E78000 S29GL128N TSOP56 S29GL128N sa32sa35 S29GLxxxM BGA-63

    h3ba omron timer

    Abstract: omron h3ba timer H3BA timer wiring diagram TRIAC TAG 9105 omron MA415a
    Text: Cat. No. Z901-E1-05 SYSMAC NE1S Series NE1S-CPU01 Programmable Controller OPERATION MANUAL NE1S Series NE1S-CPU01 Programmable Controller Operation Manual Revised December 2006 iv Notice: OMRON products are manufactured for use according to proper procedures by a qualified operator


    Original     		PDF Z901-E1-05 NE1S-CPU01 847-843-7900/Fax: NE1S-CPU01 h3ba omron timer omron h3ba timer H3BA timer wiring diagram TRIAC TAG 9105 omron MA415a

    120R

    Abstract: C8800
    Text: Am29LV2562M Data Sheet July 2003 The following document specifies Spansion memory products that are now offered by both Advanced Micro Devices and Fujitsu. Although the document is marked with the name of the company that originally developed the specification, these products will be offered to customers of both AMD and


    Original     		PDF Am29LV2562M 120R C8800

    DQ141

    Abstract: No abstract text available
    Text: M29DW128F 128 Mbit 16Mb x8 or 8Mb x16, Multiple Bank, Page, Boot Block 3V Supply, Flash Memory PRELIMINARY DATA Features summary • Supply Voltage – VCC = 2.7V to 3.6V for Program, Erase and Read – VCCQ= 1.65V to 3.6V for Input/Output – VPP =12V for Fast Program (optional)


    Original     		PDF M29DW128F 32-Word 16Mbit 48Mbit 16Mbit DQ141

    l256mh113

    Abstract: L256ML123R
    Text: Am29LV256M Data Sheet September 2003 The following document specifies Spansion memory products that are now offered by both Advanced Micro Devices and Fujitsu. Although the document is marked with the name of the company that originally developed the specification, these products will be offered to customers of both AMD and


    Original     		PDF Am29LV256M l256mh113 L256ML123R

    06SEC

    Abstract: BA213 16N10 BA167 BA184 15ET BA244 BA242 K8F5615ETM samsung nor flash
    Text: K8F56 57 15ET(B)M NOR FLASH MEMORY 256Mb M-die MLC NOR Specification INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE. NOTHING IN THIS DOCUMENT SHALL BE CONSTRUED AS GRANTING ANY LICENSE, EXPRESS OR IMPLIED, BY ESTOPPEL OR OTHERWISE,


    Original     		PDF K8F56 256Mb 070000h-07FFFFh 060000h-06FFFFh 050000h-05FFFFh 040000h-04FFFFh 030000h-03FFFFh 020000h-02FFFFh 010000h-01FFFFh 00C000h-00FFFFh 06SEC BA213 16N10 BA167 BA184 15ET BA244 BA242 K8F5615ETM samsung nor flash

    Untitled

    Abstract: No abstract text available
    Text: Am29LV128MH/L Data Sheet July 2003 The following document specifies Spansion memory products that are now offered by both Advanced Micro Devices and Fujitsu. Although the document is marked with the name of the company that originally developed the specification, these products will be offered to customers of both AMD and


    Original     		PDF Am29LV128MH/L

    Untitled

    Abstract: No abstract text available
    Text: S25FL128R 128 Megabit CMOS 3.0 Volt Flash Memory with 104-MHz SPI Serial Peripheral Interface Bus Data Sheet (Advance Information) S25FL128R Cover Sheet Notice to Readers: This document states the current technical specifications regarding the Spansion product(s) described herein. Each product described herein may be designated as Advance Information,


    Original     		PDF S25FL128R 104-MHz S25FL128R

    Untitled

    Abstract: No abstract text available
    Text: CATV - Infrastructure AD A10000 LINEAR AMPLIFIER MMIC Preliminary Rev 2 DESCRIPTION: - j f- r r J- i± . I The A10000 is a monolithic IC intended for use in applications requiring high linearity such as: Cellular Telephone Base Station Driver Amplifiers, CATV


    OCR Scan     		PDF A10000 ADA10000