A1015 TRANSISTOR Search Results

A1015 TRANSISTOR Result Highlights (5)

Part	Manufacturer	Description
2SC6026MFV	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / VCEO=50 V / IC=0.15 A / hFE=120~400 / VCE(sat)=0.25 V / SOT-723
TTC5886A	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / VCEO=50 V / IC=5 A / hFE=400~1000 / VCE(sat)=0.22 V / tf=120 ns / New PW-Mold
TTA2097	Toshiba Electronic Devices & Storage Corporation	PNP Bipolar Transistor / VCEO=-50 V / IC=-5 A / hFE=200~500 / VCE(sat)=-0.27 V / tf=60 ns / New PW-Mold
TPCP8515	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / VCEO=12 V / IC=5 A / hFE=250~500 / VCE(sat)=0.14 V / tf=50 ns / PS-8
TTC021	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / VCEO=120 V / IC=3 A / hFE=120~240 / VCE(sat)=0.15 V / tf=170 ns / PW-Mini

A1015 TRANSISTOR Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
transistor A1015 Abstract: A1015 A1015 PNP TRANSISTOR A1015 equivalent transistor pnp a1015 ic a1015 c1815 pnp A1015 DATASHEET c1815 pnp a1015 Contextual Info: A1015 A1015 Silicon PNP Epitaxial Transistor Description: The A1015 is designed for audio frequency general purpose amplifier applications and driver stage amplifier applications Features: ●Excellent hFE Linearity ●Complementary to C1815 Chip Appearance	Original	A1015 A1015 C1815 350um 350um 110um 110um 100um 100um transistor A1015 A1015 PNP TRANSISTOR A1015 equivalent transistor pnp a1015 ic a1015 c1815 pnp A1015 DATASHEET c1815 pnp a1015	PDF
A1015 transistor Abstract: transistor A1015 br a1015 Transistor TO-92 A1015 transistor A1015 GR A1015 A1015 PNP TRANSISTOR A1015 gr A1015 y pnp a1015 Contextual Info: TO-92 Plastic-Encapsulate Transistors PNP A1015 A1015 TRANSISTOR (PNP) TO-92 1. EMITTER FEATURES 2. COLLECTOR Power dissipation 3. BASE PCM: 0.4 W (Tamb=25℃) Collector current ICM: -0.15 A Collector-base voltage -50 V V(BR)CBO: Operating and storage junction temperature range	Original	A1015 -100mA, -10mA 30MHz A1015 transistor transistor A1015 br a1015 Transistor TO-92 A1015 transistor A1015 GR A1015 A1015 PNP TRANSISTOR A1015 gr A1015 y pnp a1015	PDF
transistor A1015 GR Abstract: br a1015 transistor A1015 a1015 transistor A1015 A1015 gr A1015 Y Transistor TO-92 A1015 A1015 equivalent A1015 PNP TRANSISTOR Contextual Info: A1015 A1015 TRANSISTOR PNP TO-92 1. EMITTER FEATURES 2. COLLECTOR Power dissipation 3. BASE PCM: 0.4 W (Tamb=25℃) Collector current ICM: -0.15 A Collector-base voltage -50 V V(BR)CBO: Operating and storage junction temperature range 1 2 3 TJ, Tstg: -55℃ to +150℃	Original	A1015 -100mA, -10mA 30MHz transistor A1015 GR br a1015 transistor A1015 a1015 transistor A1015 A1015 gr A1015 Y Transistor TO-92 A1015 A1015 equivalent A1015 PNP TRANSISTOR	PDF
transistor C1815 Abstract: C1815 A1015 npn c1815 transistor C1815 NPN Transistor NPN C1815 C1815 equivalent ic c1815 c1815 symbol npn TRANSISTOR c1815 Contextual Info: C1815 C1815 Silicon NPN Epitaxial Transistor Description : The C1815 is designed for audio frequency general purpose amplifier applications and driver stage amplifier applications Features: ●Excellent hFE Linearity ●Complementary to A1015 Chip Appearance	Original	C1815 C1815 A1015 350um 350um 110um 110um 100um 100um transistor C1815 A1015 npn c1815 transistor C1815 NPN Transistor NPN C1815 C1815 equivalent ic c1815 c1815 symbol npn TRANSISTOR c1815	PDF
A1015 gr Abstract: transistor A1015 GR A1015 transistor A1015 a1015 transistor Transistor TO-92 A1015 A1015 y A1015 PNP TRANSISTOR A1015 TO92 equivalent transistor A1015 Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO.,LTD TO-92 Plastic-Encapsulate Transistors A1015 TRANSISTOR PNP TO-92 1.EMITTER FEATURES z Power dissipation 2.COLLECTOR MAXIMUM RATINGS (TA=25℃ unless otherwise noted) Symbol Parameter VCBO 3.BASE Value Units	Original	A1015 -100mA, -10mA 30MHz A1015 gr transistor A1015 GR A1015 transistor A1015 a1015 transistor Transistor TO-92 A1015 A1015 y A1015 PNP TRANSISTOR A1015 TO92 equivalent transistor A1015	PDF
Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 A1015 TRANSISTOR Plastic-Encapsulate Transistors PNP SOT-23 FEATURES High voltage and high current Excellent hFE Linearity Low niose Complementary to C1815 z z z z 1. BASE 2. EMITTER 3. COLLECTOR	Original	OT-23 A1015 C1815 -10mA 30MHz	PDF
Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO.,LTD TO-92 Plastic-Encapsulate Transistors A1015 TRANSISTOR（ PNP ） TO—92 1.EMITTER FEATURES 2.COLLECTOR Power dissipation PCM : 0.4 W（Tamb=25℃） Collector current ICM : -0.15 A Collector-base voltage	Original	A1015 30MHz 270TYP 050TYP	PDF
Contextual Info: TO-92 Plastic-Encapsulate Transistors A1015 TRANSISTOR PNP TO—92 1.EMITTER FEATURES Power dissipation 2.COLLECTOR 3.BASE MAXIMUM RATINGS* TA=25℃ unless otherwise noted Symbol VCBO Parameter Value Units Collector-Base Voltage -50 V VCEO Collector-Emitter Voltage	Original	A1015 -100mA, -10mA 30MHz	PDF
Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 A1015 TRANSISTOR Plastic-Encapsulate Transistors SOT-23 PNP FEATURES High voltage and high current VCEO:=-50V(min.),IC=-150mA(max.) z Excellent hFE Linearity hFE (2)=80(Typ.) at VCE=-6V,IC=-150mA	Original	OT-23 A1015 -150mA -150mA C1815 -10mA 30MHz	PDF
a1015 transistor Abstract: transistor A1015 GR transistor A1015 A1015 PNP TRANSISTOR a1015 A1015 gr Transistor TO-92 A1015 transistor pnp a1015 a1015 TRANSISTOR pnp br a1015 Contextual Info: A1015 Transistor PNP TO-92 1.EMITTER 2.COLLECTOR 3.BASE Features Power dissipation MAXIMUM RATINGS (TA=25℃ unless otherwise noted) Symbol Parameter Value Units VCBO Collector-Base Voltage -50 V VCEO Collector-Emitter Voltage -50 V VEBO Emitter-Base Voltage	Original	A1015 -100A, -100mA, -10mA 30MHz a1015 transistor transistor A1015 GR transistor A1015 A1015 PNP TRANSISTOR a1015 A1015 gr Transistor TO-92 A1015 transistor pnp a1015 a1015 TRANSISTOR pnp br a1015	PDF
Contextual Info: A1015 0.4 W, -150 mA, -50 V PNP Plastic Encapsulated Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen and lead free TO-92 FEATURES 1.27 Typ. Power Dissipation 1: Emitter 2: Collector 3: Base 1.25±0.2 14.3±0.2	Original	A1015 -100mA, -10mA 30MHz 01-June-2002	PDF
Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO.,LTD TO-92 Plastic-Encapsulate Transistors A1015 TRANSISTOR PNP TO—92 1.EMITTER FEATURES Power dissipation 2.COLLECTOR 3.BASE MAXIMUM RATINGS* TA=25℃ unless otherwise noted Symbol VCBO Parameter Value Units	Original	A1015 -100mA, -10mA 30MHz	PDF
A1015 sot-23 Contextual Info: WILLAS FM120-M A1015 THRU FM1200-M SOT-23 Plastic-Encapsulate Transistors 1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V Pb Free Produ SOD-123+ PACKAGE Package outline Features process design, excellent power dissipation offers TRANSISTOR• Batch	Original	OT-23 OD-123+ FM120-M A1015 FM1200-M OT-23 OD-123H FM120-MH FM130-MH FM140-MH A1015 sot-23	PDF
A1015 Abstract: A1015GR A1015Y A1015-Y A1015-GR transistor a1015y A1015 gr A1015-GR H transistor A1015 A1015 equivalent Contextual Info: A1015 -0.15A , -50V PNP Plastic-Encapsulated Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free TO-92 FEATURES Power Dissipation G H 1Emitter 2Collector 3Base J CLASSIFICATION OF hFE A Product-Rank	Original	A1015 A1015-O A1015-Y A1015-GR 04-Mar-2011 -100mA, -10mA 30MHz A1015 A1015GR A1015Y A1015-Y A1015-GR transistor a1015y A1015 gr A1015-GR H transistor A1015 A1015 equivalent	PDF

A1015 sot-23 Abstract: A1015 A1015 BA transistor A1015 a1015 transistor C1815 br a1015 c1815 SOT-23 A1015 DATASHEET equivalent transistor A1015 Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 A1015 TRANSISTOR Plastic-Encapsulate Transistors PNP SOT-23 FEATURES High voltage and high current Excellent hFE Linearity Low niose Complementary to C1815 z z z z 1. BASE 2. EMITTER 3. COLLECTOR	Original	OT-23 A1015 C1815 -10mA 30MHz A1015 sot-23 A1015 A1015 BA transistor A1015 a1015 transistor C1815 br a1015 c1815 SOT-23 A1015 DATASHEET equivalent transistor A1015	PDF
A1015 gr Abstract: A1015 y transistor A1015 A1015 A1015 TO92 A1015 equivalent br a1015 A1015 DATASHEET A1015 gr W A1015-pnp Contextual Info: A1015 PNP General Purpose Transistors TO-92 P b Lead Pb -Free 1. EMITTER 2. COLLECTOR 3. BASE 1 2 3 MAXIMUM RATINGS* (TA=25°C unless otherwise noted) Rating Symbol Value Unit Collector-Emitter Voltage VCEO -50 V Collector-Base Voltage VCBO -50 V Emitter-Base Voltage	Original	A1015 30MHz 14-Feb-06 270TYP A1015 gr A1015 y transistor A1015 A1015 A1015 TO92 A1015 equivalent br a1015 A1015 DATASHEET A1015 gr W A1015-pnp	PDF
A1015 Abstract: A1015 gr A1015 Y transistor A1015 GR transistor a1015 br a1015 a1015 transistor A1015 PNP TRANSISTOR A1015 TO92 Contextual Info: Hcmam TO-92 Piasti A1015 Encapsulate Transistors TO-92 TRANSISTOR P N P FEATURES Power dissipation 1,EMITTER P CM • 0,4 Collecto cu ent W (Tamb=25’’C> 2.COLLECTOR lCM : -0.15 A Collecto -base voltage 3.BASE 1 2 3 • -50 V Ope ating and storage junction temperature range	OCR Scan	A1015 A1015 gr A1015 Y transistor A1015 GR transistor a1015 br a1015 a1015 transistor A1015 PNP TRANSISTOR A1015 TO92	PDF
A1015 BA Abstract: A1015 sot-23 c1815 pnp A1015 PNP TRANSISTOR A1015 transistor pnp a1015 marking BA sot-23 a1015 transistor c1815 SOT-23 transistor A1015 Contextual Info: A1015 SOT-23 Transistor PNP SOT-23 1. BASE 2. EMITTER 3. COLLECTOR Features High voltage and high current VCEO:=-50V(min.),IC=-150mA(max.) Excellent hFE Linearity hFE (2)=80(Typ.) at VCE=-6V,IC=-150mA hFE (IC=-0.1mA)/hFE(IC=-2mA)=0.95(Typ.) Low niose: NF=1dB(Typ.) at f=1KHz	Original	A1015 OT-23 OT-23 -150mA C1815 -100u -10mA 30MHz A1015 BA A1015 sot-23 c1815 pnp A1015 PNP TRANSISTOR A1015 transistor pnp a1015 marking BA sot-23 a1015 transistor c1815 SOT-23 transistor A1015	PDF
A1015 Abstract: A1015 equivalent transistor A1015 GR transistor A1015 A1015 y A1015 y equivalent a1015 transistor A1015 PNP TRANSISTOR pnp transistor a1015 A1015 GR Contextual Info: A1015 TO-92 Plastic-Encapsulate Transistors Transistor PNP FEATURES Power dissipation o P CM :0.4 W (Tamb=25 C) Collector current I CM :-0.15 A Collector-base voltage V (BR)CBO :-50 V Operating and storage junction temperature range o o T J ,T stg :-55 C to +150 C	Original	A1015 A1015 A1015 equivalent transistor A1015 GR transistor A1015 A1015 y A1015 y equivalent a1015 transistor A1015 PNP TRANSISTOR pnp transistor a1015 A1015 GR	PDF
A1015 Abstract: A1015 y A1015 PNP TRANSISTOR br a1015 pnp a1015 Contextual Info: M C C TO-92 Plastic-Encapsulate Transistors A1015 TRANSISTOR PNP FEATU R E S P cm; 0.4W (T a m b = 2 5 t) Icm: -0.15A /voltage V(BR)CBO: -5 0 V M S M M i a tofeltetoraga Junction temperature range Tj.Tstg: -55X2- to + 150°C ELECTRICAL CHARACTERISTICS (Tam b=25°C u n l e s s o t h e r w i s e	OCR Scan	A1015 -55X2- A1015 A1015 y A1015 PNP TRANSISTOR br a1015 pnp a1015	PDF
Contextual Info: KSA1015 PNP Epitaxial Silicon Transistor Features • Low-Frequency Amplifier • Collector-Base Voltage: VCBO = -50 V • Complement to KSC1815 1 TO-92 1. Emitter 2. Collector 3. Base Ordering Information Part Number Marking Package Packing Method KSA1015GRTA	Original	KSA1015 KSC1815 KSA1015GRTA A1015 KSA1015YTA	PDF
A1015 gr Abstract: Transistor TO-92 A1015 A1015 A1015 TO92 A10153 pnp transistor a1015 transistor A1015 A1015 equivalent A1015 gr W datasheet A1015 gr W Contextual Info: Spec. No. : C306A3-T Issued Date : 2003.08.26 CYStech Electronics Corp. Revised Date : Page No. : 1/4 General Purpose PNP Epitaxial Planar Transistor BTA1015A3 Description • The BTA1015A3 is designed for use in driver stage of AF amplifier and general purpose amplification.	Original	C306A3-T BTA1015A3 BTA1015A3 -150mA BTC1815A3. UL94V-0 A1015 gr Transistor TO-92 A1015 A1015 A1015 TO92 A10153 pnp transistor a1015 transistor A1015 A1015 equivalent A1015 gr W datasheet A1015 gr W	PDF
transistor cross reference Abstract: transistor c1008 npn transistor c1008 NPN C1008 s8550 npn SS8550 cross reference S9014 cross reference c1008 transistor s9014 equivalent S8050 equivalent Contextual Info: Micro Commercial Components Small Signal Transistor Cross Reference Group by Package FORMALLY MICROSEMI CHATSWORTH SOT-23 PACKAGE MCC PART NUMBER HFE Pc mW Ic (mA) BVcbo (V) BVceo (V) Icb (µ A) vcb(V) Vce(sat) (V) fT (MHz) INDUSTRY STANDARD PART NUMBER	Original	OT-23 S9011 S9012 S9013 S9014 S9015 S9016 S9018 S8050 S8550 transistor cross reference transistor c1008 npn transistor c1008 NPN C1008 s8550 npn SS8550 cross reference S9014 cross reference c1008 transistor s9014 equivalent S8050 equivalent	PDF
IFR-GDC40PW Contextual Info: CONTENTS • LED INDICATOR LAMPS 5 • MINI TYPE LED LAMPS 11 • SPECIAL TYPE LED LAMPS 11 • TWO-COLOR LED LAMPS 13 • BLINKING LED LAMPS 13 •LIG H T BAR LED 13 . ULTRA-BRIGHT LED LAMPS 13 • LED NUMBERIC DISPLAY 15 . DOT MATRIX LED DISPLAY 19 • INFRARED EMITTING DIODE	OCR Scan		PDF

A1015 TRANSISTOR Search Results

A1015 TRANSISTOR Result Highlights (5)

A1015 TRANSISTOR Datasheets Context Search

transistor A1015

A1015 transistor

transistor A1015 GR

transistor C1815

A1015 gr

a1015 transistor

A1015 sot-23

A1015

A1015 sot-23

A1015 gr

A1015

A1015 BA

A1015

A1015

A1015 gr

transistor cross reference

IFR-GDC40PW