A102 DIODE Search Results

LM-101-A102

Contextual Info: LM-101-A102 650nm Diode Line Laser Module Multi purpose, high quality, low cost red laser diode line generating module. Driver electronics already included. Laser class II device Specifications 25°C Min. Optical CW Output Power PO Center Wavelength λC

High Flux RGB LED

Abstract: "Deep Red Led" LED FLUX UV 400nm 740nm zener diode color codes rgb led 4.4mm x 4.4mm 1XXXXX rgbw VIOLET
Contextual Info: High Luminous Efficacy Deep Red LED Emitter LZ1-00R200 Key Features • High Efficacy 5W Deep Red LED • Ultra-small foot print – 4.4mm x 4.4mm  Surface mount ceramic package with integrated glass lens  Very high Radiant Flux density  Autoclave complaint JEDEC JESD22-A102-C

a106 diode

Abstract: diode A106 ADA750F 178289-5 ada1000f-24 A-102 AC264V ADA750F-24 ada750 A102
Contextual Info: Instruction Manual Unit type 1 2 3 Function A-102 1.1 Input voltage range A-102 1.2 Inrush current limiting A-102 1.3 Overcurrent protection A-102 1.4 Peakcurrent protection A-102 1.5 Thermal protection A-102 1.6 Overvoltage protection A-102 1.7 Output voltage adjustment range

inverter welding machine circuit board

Abstract: CPF00 JVOP-160 yaskawa inverter contactors yaskawa A70P900 yaskawa dynamic braking unit diagram MC 1200 Motor Control Board H3 OMRON 2.5 kva inverter history references
Contextual Info: Spain Tel: +34 913 777 900 www.omron.es Belgium Tel: +32 0 2 466 24 80 www.omron.be Germany Tel: +49 (0) 2173 680 00 www.omron.de Norway Tel: +47 (0) 22 65 75 00 www.omron.no Sweden Tel: +46 (0) 8 632 35 00 www.omron.se Czech Republic Tel: +420 234 602 602

Contextual Info: D IO D E M O D U L E DD200HB Power Diode Module D D 200H B series are designed for various rectifier circuits. D D 200H B has two diode chips connected in series and the mounting base is electrically isolated from elements for simple heatsink construction. Wide voltage rating up to 1,600 V

SDP02S60

Abstract: SWITCHING DIODE 600V 2A A102 diode sdp02s
Contextual Info: Preliminary SIDC00D60SIC2 Silicon Carbide Schottky Diode FEATURES: • Worlds first 600V Schottky diode • Revolutionary semiconductor material Silicon Carbide • Switching behavior benchmark • No reverse recovery • No temperature influence on the switching

ANPEC

Abstract: A102 APX9031 J-STD-020A ED-7500A EIAJ ED-7500A
Contextual Info: APX9031 Hall Effect Sensor IC Features General Description • • The APX9031 is an integrated Hall Effect Sensor IC designed for electric commutation of DC brushless motor applications. Even with a reverse voltage protection diode, the APX9031 still can operate at as

Contextual Info: APX9145 High Sensitivity Hall Effect Sensor IC with FG Output Features General Description • On-chip Hall Sensor The APX9145 is an integrated Hall Effect Sensor IC • Build-in Output Zener Diodes to Clamp the Peak with f requency generation output for electric

A101

Abstract: A102 EN60747-5-2 KTLP160J
Contextual Info: cosmo KTLP160J High Reliability Photocoupler UL 1577 File NO.E169586 Features VDE EN60747-5-2 (File No.40009235) Outside Dimension:Unit (mm) 1. Opaque type, mini-flat package. 2. Subminiature type cosmo (The volume is smaller than that of our \ 160J ' XXX -

hall elements dc fan

Abstract: 2505 hall ic B2 marking code Zener A102 APX9145 marking ifg TO-92M4 905H2
Contextual Info: APX9145 High Sensitivity Hall Effect Sensor IC with FG Output Features General Description • On-chip Hall Sensor The APX9145 is an integrated Hall Effect Sensor IC • Build-in Output Zener Diodes to Clamp the Peak wit h frequenc y generat ion out put for elec t ric

APM2800B

Abstract: STD-020C SOT-23-5 MARKING VF
Contextual Info: APM2800B N-Channel Enhancement Mode MOSFET with Schottky Diode Pin Description Features MOSFET • 20V/3A , RDS ON =50mΩ(typ.) @ VGS=4.5V RDS(ON)=90mΩ(typ.) @ VGS=2.5V • • • Super High Dense Cell Design Top View of SOT-25 Reliable and Rugged (5)

MARKING B4 SOT-25

Abstract: SOT-23-5 MARKING VF APM2801B STD-020C mosfet b4 C145M
Contextual Info: APM2801B P-Channel Enhancement Mode MOSFET with Schottky Diode Pin Description Features MOSFET • -20V/-1.5A , RDS ON =145mΩ(typ.) @ VGS=-4.5V RDS(ON)=180mΩ(typ.) @ VGS=-2.5V • • • Super High Dense Cell Design Top View of SOT-25 Reliable and Rugged

MIP0224SY

Abstract: 2SK1937 t201 transformer M51995AFP mip0224 ZUP-200 Nemic-Lambda CN d1fl20u 0134G ZUP20
Contextual Info: ZUP-200 SERIES RELIABILITY DATA DWG: 1A548-79-01 QA APPD APPD CHK DWG ç> ^ ^ A WR/llMAQciifltfi,Do^ovv PeUl c.y. ’hi/ ji j ci ‘I &3. S/ ÜOV-l-Lô<i fjn/~ &NEMIC-LAMBDA LTD. INDEX 1.MTBF; Calculated Value of MTBF R-1 2.Component Derating R-2-12 3.Main Components Temperature Rise

apm28

Abstract: A104 diode
Contextual Info: APM2804QA P-Channel Enhancement Mode MOSFET with Schottky Diode Pin Description Features C8 MOSFET • C7 D6 D5 -20V/-2.6A, RDS ON = 85mΩ(typ.) @ VGS= -4.5V A1 RDS(ON)= 120mΩ(typ.) @ VGS= -2.5V • • A2 S3 G4 Super High Dense Cell Design Reliable and Rugged

APM2807QB

Abstract: ANPEC APM2807 B102 JESD-22 J-STD-020D
Contextual Info: APM2807QB P-Channel Enhancement Mode MOSFET with Schottky Diode Features Pin Description MOSFET • C G A S NC D -20V/-2.3A, RDS ON = 85mΩ(typ.) @ VGS= -4.5V D C RDS(ON)= 120mΩ(typ.) @ VGS= -2.5V • • • Super High Dense Cell Design A NC SBD G S (3)

M2805

Contextual Info: APM2805QA P-Channel Enhancement Mode MOSFET with Schottky Diode Pin Description Features MOSFET • C8 A1 RDS ON = 120mΩ(typ.) @ VGS= -2.5V A2 S3 Super High Dense Cell Design Reliable and Rugged G4 Top View of DFN3x2-8 D (5, 6) C (7, 8) S (3) A (1, 2) VF=0.45V (typ.) @ If=500mA.

M2805

Abstract: APM2805 APM2805QA JESD-22 MO-229 ANPEC c125t
Contextual Info: APM2805QA P-Channel Enhancement Mode MOSFET with Schottky Diode Pin Description Features C8 MOSFET • C7 D6 D5 -20V/-2.6A, RDS ON = 85mΩ(typ.) @ VGS= -4.5V A1 RDS(ON)= 120mΩ(typ.) @ VGS= -2.5V • • A2 S3 G4 Super High Dense Cell Design Reliable and Rugged

APM2803

Abstract: APM2803CG STD-020C
Contextual Info: APM2803CG P-Channel Enhancement Mode MOSFET with Schottky Diode Pin Description Features D MOSFET NC • -20V/-1.5A, C RDS ON =145mΩ(typ.) @ VGS=-4.5V G RDS(ON)=180mΩ(typ.) @ VGS=-2.5V • • • S A Super High Dense Cell Design Reliable and Rugged Top View of JSOT-6

DIODE marking S4 23a

Contextual Info: APM2807QB P-Channel Enhancement Mode MOSFET with Schottky Diode Pin Description Features C G S MOSFET • -20V/-2.3A, RDS ON = 85mΩ(typ.) @ VGS= -4.5V RDS(ON)= 120mΩ(typ.) @ VGS= -2.5V • • • Super High Dense Cell Design A Reliable and Rugged NC D

STD-020C

Abstract: APM2803 APM2803CG
Contextual Info: APM2803CG P-Channel Enhancement Mode MOSFET with Schottky Diode Pin Description Features D MOSFET NC • -20V/-1.5A, C RDS ON =145mΩ(typ.) @ VGS=-4.5V G RDS(ON)=180mΩ(typ.) @ VGS=-2.5V • • • S A Super High Dense Cell Design Reliable and Rugged Top View of JSOT-6

APM2802CG

Abstract: APM2802 STD-020C
Contextual Info: APM2802CG N-Channel Enhancement Mode MOSFET with Schottky Diode Pin Description Features D MOSFET NC • C 20V/3A, RDS ON =50mΩ(typ.) @ VGS=4.5V G S RDS(ON)=80mΩ(typ.) @ VGS=2.5V • • • A Super High Dense Cell Design Reliable and Rugged Top View of JSOT-6

APM2802CG

Abstract: APM2802
Contextual Info: APM2802CG N-Channel Enhancement Mode MOSFET with Schottky Diode Features Pin Description MOSFET D NC • C 20V/3A, G RDS ON =50mΩ(typ.) @ VGS=4.5V S RDS(ON)=80mΩ(typ.) @ VGS=2.5V • • • A Super High Dense Cell Design Top View of JSOT-6 Reliable and Rugged

marking 6AC sot23

Contextual Info: Datasheet P-Channel Enhancement Mode MOSFET Features TDM3415S Pin Description -20V/-1.5A , RDS ON =130mΩ(typ.) @ VGS=-4.5V RDS(ON)=170mΩ(typ.) @ VGS=-2.5V Top View of SOT23-3L Super High Dense Cell Design Reliable and Rugged Lead Free Available (RoHS Compliant)

Contextual Info: Datasheet N-Channel Enhancement Mode MOSFET Features TDM2302S Pin Description 20V/3A , RDS ON =50mΩ(typ.) @ VGS=4.5V RDS(ON)=90mΩ(typ.) @ VGS=2.5V Top View of SOT23-3L Super High Dense Cell Design Reliable and Rugged Lead Free Available (RoHS Compliant)