A103 ATE Search Results

A103

Abstract: A104 EN60747-5-2 KTLP161G
Contextual Info: cosmo KTLP161G High Reliability Photocoupler UL 1577 File No.E169586 Features VDE EN60747-5-2 (File No.40009235) Outside Dimension:Unit ( m m ) 1. Opaque type, mini-flat package. 2. Subminiature type cosmo (The volume is smaller than that of our 6 1 G

prior H101

Abstract: HDSP-A801 equivalent DPA801
Contextual Info: Whpì H E W LE TT m L'Hâ PACKARD Low Current Seven Segment Displays Technical D ata Features D escription • • • • These low current seven segment displays are designed for applications requiring low power consumption. They are tested and selected for their

TC57H1025AD-70

Abstract: A-102 kcs2
Contextual Info: 1 M EG A BIT 65,536 W O R D x 16 BIT HIGH SPEED CM O S U .V . E R A SA B LE AN D E LE C T R IC A LLY P R O G R A M M A B LE REA D O N LY M EM O R Y DESCRIPTION The TC57H1025AD is a 65,536 word X 16 bit high speed CMOS ultraviolet lig h t erasable and electrically program m able read

Contextual Info: Pm37LV512 512 Kbit 64K X 8 Dual-Voltage Multiple-Cycle-Programmable ROM FEATURES • Low Power Consumption - Typical 5 mA active read current - Typical 18 µA CMOS standby current • Low Voltage Operation - Dual read VCC ranges: 2.7 V to 3.6 V or 4.5 V to

Contextual Info: 4,194,304 W O R D x PRELIMINARY 1 BIT D Y N A M I C R A M D E S C R IP T IO N The TC514100AF/AJ/ASJ/AZ is the new generation dynamic RAM organized 4,194,304 words by 1 bit. The TC514100AP/AJ/ASJ/AZ utilizes TOSHIBA’S CMOS Silicon gate process technology as well as

TDC1001

Abstract: 74LS04 ttl 1001b8c TDC1025 Marking A103 low noise TMC12441 SMD CAPACITOR CODE b7 SMD marking A67 LS161 TDC1038
Contextual Info: A /D Converters T R in i TRW offers a line o f high performance A /D converters that addresses applications from 50kHz to 100MHz. For video bandwidths on the order o f 10MHz , w e have converters with resolutions o f 4 to 10 bits and conversion rates from 18Msps to lOOMsps. W e pioneered the monolithic video A /D converter in 1977,

Contextual Info: TOSHIBA TC51V4400ASJL/AFTL80 1,048,576 WORD X 4 BIT DYNAMIC RAM DESCRIPTION The TC51V 4400ASJL/AFTL is the new generation dynam ic RAM organized 1,048,576 w ord by 4 bit. The TC51V 4400A SJL/AFTL utilizes T oshiba's CM OS silicon gate process technology as w ell as advanced

sn10020

Abstract: A101 A801 A901 HDSP-335X HDSP-751X HDSP-A10X HDSP-A80X HDSP-A90X HDSP-K12X
Contextual Info: W EWLETT mL'hSÌ HM H PACKARD Low Current Seven Segment Displays Technical Data Features • Low Power Consumption • Industry Standard Size • Industry Standard Pinout • Choice of Character Size 7.6 mm 0.30 in , 10 mm (0.40 in), 10.9 mm (0.43 in), 14.2

A-102

Abstract: TC57 TC57H1025AD-70 TC57h1025 A106 tvs A12o
Contextual Info: r t f'fTJoiriit’ r ii tf ln r î » TC57H1 1 M EG A BIT 65,536 W O R D x 16 BIT HIGH SPEED CMOS U.V. ERASABLE AND ELECTRICALLY PR O G RAM M A BLE READ ONLY M EM O RY DESCRIPTION T h e TC57H1025AD is a 65,536 word X 16 b it h ig h speed CMOS u ltra v io le t lig h t e rasa b le and

Contextual Info: TOSHIBA LOGIC/MEMORY 4,194,304 W O R D X 42E » ^ 7 2 4 0 0 Q 2 0 ci7b T B 1 T 0 S 2 PRELIMINARY 1 "BIT D Y N A M IC R A M 7 - ji. - 2 3 - lS r DESCRIPTION The TC514100AP/AJ/ASJ/AZ is the new generation dynamic RAM organized 4,194,304 words by 1 bit. The TC514100AP/AJ/ASJ/AZ utilizes TOSHIBA’S CMOS Silicon gate process technology as well as

39f010

Abstract: 39f020 39F040 PM39F010-70JC PM39F040 39f0 555H A103 A114 A115
Contextual Info: PMC Pm39F010 / Pm39F020 / Pm39F040 1 Mbit / 2 Mbit / 4 Mbit 5 Volt-only CMOS Flash Memory FEATURES • Single Power Supply Operation - Low voltage range: 4.5 V - 5.5 V • Automatic Erase and Byte Program - Typical 16 µs/byte programming time - Typical 55 ms sector/block/chip erase time

Contextual Info: Pm39F010 / Pm39F020 / Pm39F040 1 Mbit / 2 Mbit / 4 Mbit 5 Volt-only CMOS Flash Memory FEATURES • Single Power Supply Operation - Low voltage range: 4.5 V - 5.5 V • Automatic Erase and Byte Program - Typical 16 µs/byte programming time - Typical 55 ms sector/block/chip erase time

pcb design seven segment display

Abstract: A101 A801 HDSP-751X HDSP-A90X HDSP-E10X HDSP-F10X HDSP-K12X ANOD01
Contextual Info: m Low Current Seven Segment Displays Technical Data F eatu res D escrip tion • • • • These low current seven segment displays are designed for applications requiring low power consumption. They are tested and selected for their excellent low current character­

pm25lv512

Contextual Info: PMC Pm25LV512 / Pm25LV010 512 Kbit / 1 Mbit 3.0 Volt-only, Serial Flash Memory With 25 MHz SPI Bus Interface FEATURES • Block Write Protection - The Block Protect BP1, BP0 bits allow part or entire of the memory to be configured as read-only. • Single Power Supply Operation

chn 347

Contextual Info: 1 Megabit 128K x 8 SuperFlash MTP SST37VF010 Preliminary Specifications FEATURES: • • 2.7-3.6V Read Operation Fast Programming Operation Superior Reliability - - Features Electrical Erase Endurance: At least 1000 Cycles Greater than 100 years Data Retention

Contextual Info: 512 Kilobit 64K x 8 SuperFlash MTP SST37VF512 Prelim inary Specifications FEATURES: • • 2.7-3.6V Read Operation Fast Programming Operation Superior Reliability - - Features Electrical Erase Endurance: At least 1000 Cycles Greater than 100 years Data Retention

pm25lv512

Contextual Info: Pm25LV512 / Pm25LV010 512 Kbit / 1 Mbit 3.0 Volt-only, Serial Flash Memory With 25 MHz / 33 MHz SPI Bus Interface FEATURES • Block Write Protection - The Block Protect BP1, BP0 bits allow part or entire of the memory to be configured as read-only. • Single Power Supply Operation

1/CHN 326

Contextual Info: 21Ü 2 Megabit 256K x 8 Multi-Purpose Flash SST39SF020 Data Sheet FEATURES: • • • Organized as 256 K X 8 Fast Sector Erase and Byte Program: Single 5.0V Read and Write Operations - Superior Reliability - • • Active Current: 20 mA (typical) Standby Current: 10 |iA (typical)

Contextual Info: 4 Megabit 512K x 8-Bit Multi-Purpose Flash SST39VF040Q Advance Information FEATURES: • Organized as 512 K x 8 • • Single 2.7-3.6V Read and Write Operations • • V • Superior Reliability - • Uniform 4 KByte sectors Block Erase Capability (8 blocks)

amd athlon II PIN LAYOUT voltage ground

Abstract: D-K7600M block diagram of amd Athlon II D-K7650M STPCLK amd athlon II PIN LAYOUT voltage ground 64 AMD Athlon II ddr ic a109
Contextual Info: aa/y/ttfonnati0n AMD Athl Processor Data Sheet AM DÎI 0557555 0 0 b 7170 m Preliminary Information 1999 Advanced Micro Devices, Inc A ll rights reserved. The contents of this docum ent are provided in connection w ith Advanced Micro D evices, Inc. “AM D” products. AMD m akes no representations or

PM25LV020

Abstract: Pm25LV010
Contextual Info: PMC Pm25LV010 / 020 / 040 1 Mbit / 2 Mbit / 4 Mbit 3.0 Volt-only, Serial Flash Memory With 33 MHz SPI Bus Interface FEATURES • Sector, Block or Chip Erase Operation - Typical 40 ms sector, block or chip erase • Single Power Supply Operation - Low voltage range: 2.7 V - 3.6 V

Contextual Info: 21Ü 1 Megabit 128K x 8 Multi-Purpose Flash SST39SF010 Data Sheet FEATURES: • Organized as 128K X 8 • Single 5.0V Read and Write Operations • Superior Reliability - Endurance: 100,000 Cycles (typical) - Greater than 100 years Data Retention Low Power Consumption:

Contextual Info: 512 Kilobit 64K x 8 Page Mode EEPROM SST29EE512A / SST29LE512A / SST29VE512A Data Sheet FEATURES: • Single Voltage Read and Write Operations - 5.0V-only for SST29EE512A - 3.0-3.6V for SST29LE512A - 2.7-3.6V for SST29VE512A • Superior Reliability - Endurance: 100,000 Cycles (typical)

SST39VF400Q

Abstract: 39VF400
Contextual Info: 4 Megabit 256K x 16-Bit Multi-Purpose Flash SST39VF400Q / SST39VF400 A dvance Inform ation FEATURES: • Organized as 256 K X 16 • Latched Address and Data • Single 2.7-3.6V Read and Write Operations • Fast Sector Erase and Word Program: • V ddq