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    FM16W08

    Contextual Info: Preliminary FM16W08 64Kb Wide Voltage Bytewide F-RAM Features 64Kbit Ferroelectric Nonvolatile RAM • Organized as 8,192 x 8 bits • High Endurance 100 Trillion 1014 Read/Writes • 38 year Data Retention (@ +75C) • NoDelay Writes • Advanced High-Reliability Ferroelectric Process


    Original     		FM16W08 64Kbit FM16W08, 00002G FM16W08-SG A103700002G FM16W08 PDF

    Contextual Info: Pre-Production FM16W08 64Kb Wide Voltage Bytewide F-RAM Features 64Kbit Ferroelectric Nonvolatile RAM • Organized as 8,192 x 8 bits  High Endurance 100 Trillion 1014 Read/Writes  38 year Data Retention (@ +75C)  NoDelay Writes  Advanced High-Reliability Ferroelectric Process


    Original     		FM16W08 64Kbit FM16W08 64-kilobit FM16W08, 00002G FM16W08-SG A103700002G PDF

    FM1608B-SG

    Abstract: AEC-Q100-002 MS-013 FM1608B
    Contextual Info: Preliminary FM1608B 64Kb Bytewide 5V F-RAM Memory Features 64Kbit Ferroelectric Nonvolatile RAM • Organized as 8,192 x 8 bits • High Endurance 1 Trillion 1012 Read/Writes • 38 year Data Retention (@ +75°C) • NoDelay Writes • Advanced High-Reliability Ferroelectric Process


    Original     		FM1608B 64Kbit FM1608B 64-kilobit MS-013 FM1608B, 00002G FM1608B-SG A103700002G FM1608B-SG AEC-Q100-002 PDF

    Contextual Info: Pre-Production FM1608B 64Kb Bytewide 5V F-RAM Memory Features 64Kbit Ferroelectric Nonvolatile RAM Organized as 8,192 x 8 bits High Endurance 1 Trillion 1012 Read/Writes 38 year Data Retention (@ +75 C) NoDelay Writes Advanced High-Reliability Ferroelectric Process


    Original     		FM1608B 64Kbit 28-pin PDF

    Contextual Info: Pre-Production FM16W08 64Kb Wide Voltage Bytewide F-RAM Features 64Kbit Ferroelectric Nonvolatile RAM Organized as 8,192 x 8 bits High Endurance 100 Trillion 1014 Read/Writes 38 year Data Retention (@ +75C) NoDelay Writes Advanced High-Reliability Ferroelectric Process


    Original     		FM16W08 64Kbit PDF

    Contextual Info: Preliminary FM1608B 64Kb Bytewide 5V F-RAM Memory Features 64Kbit Ferroelectric Nonvolatile RAM • Organized as 8,192 x 8 bits • High Endurance 1 Trillion 1012 Read/Writes • 38 year Data Retention (@ +75°C) • NoDelay Writes • Advanced High-Reliability Ferroelectric Process


    Original     		FM1608B 64Kbit 28-pin MS-013 FM1608B, 00002G FM1608B-SG A103700002G PDF

    Contextual Info: Pre-Production FM1608B 64Kb Bytewide 5V F-RAM Memory Features 64Kbit Ferroelectric Nonvolatile RAM • Organized as 8,192 x 8 bits  High Endurance 1 Trillion 1012 Read/Writes  38 year Data Retention (@ +75C)  NoDelay Writes  Advanced High-Reliability Ferroelectric Process


    Original     		FM1608B 64Kbit 28-pin FM1608B, 00002G FM1608B-SG A103700002G PDF

    Contextual Info: Pre-Production FM18W08 256Kb Wide Voltage Bytewide F-RAM Features 256Kbit Ferroelectric Nonvolatile RAM • Organized as 32,768 x 8 bits  High Endurance 100 Trillion 1014 Read/Writes  38 year Data Retention  NoDelay Writes  Advanced High-Reliability Ferroelectric Process


    Original     		FM18W08 256Kb 256Kbit 32Kx8 FM18W08, 00002G FM18W08-SG A103700002G PDF

    Contextual Info: Pre-Production FM18W08 256Kb Wide Voltage Bytewide F-RAM Features 256Kbit Ferroelectric Nonvolatile RAM • Organized as 32,768 x 8 bits  High Endurance 100 Trillion 1014 Read/Writes  38 year Data Retention  NoDelay Writes  Advanced High-Reliability Ferroelectric Process


    Original     		FM18W08 256Kb 256Kbit 32Kx8 FM18W08, 00002G FM18W08-SG A103700002G PDF

    Contextual Info: Preliminary FM18W08 256Kb Wide Voltage Bytewide F-RAM Features 256Kbit Ferroelectric Nonvolatile RAM • Organized as 32,768 x 8 bits • High Endurance 100 Trillion 1014 Read/Writes • 38 year Data Retention • NoDelay Writes • Advanced High-Reliability Ferroelectric Process


    Original     		FM18W08 256Kb 256Kbit 32Kx8 FM18W08, 00002G FM18W08-SG A103700002G PDF

    Contextual Info: Pre-Production FM1608B 64Kb Bytewide 5V F-RAM Memory Features 64Kbit Ferroelectric Nonvolatile RAM • Organized as 8,192 x 8 bits  High Endurance 1 Trillion 1012 Read/Writes  38 year Data Retention (@ +75C)  NoDelay Writes  Advanced High-Reliability Ferroelectric Process


    Original     		FM1608B 64Kbit FM1608B 64-kilobit FM1608B, 00002G FM1608B-SG A103700002G PDF

    FM18W08

    Abstract: FM18W08-SG FM18W08-S AEC-Q100-002 MS-013 fm18w08sg cmos disadvantages
    Contextual Info: Preliminary FM18W08 256Kb Wide Voltage Bytewide F-RAM Features 256Kbit Ferroelectric Nonvolatile RAM • Organized as 32,768 x 8 bits • High Endurance 100 Trillion 1014 Read/Writes • 38 year Data Retention • NoDelay Writes • Advanced High-Reliability Ferroelectric Process


    Original     		FM18W08 256Kb 256Kbit FM18W08 256-kilobit 28-pin MS-013 FM18W08, 00002G FM18W08-SG FM18W08-S AEC-Q100-002 fm18w08sg cmos disadvantages PDF

    FM16W08

    Abstract: FM16W08-SG AEC-Q100-002 MS-013
    Contextual Info: Preliminary FM16W08 64Kb Wide Voltage Bytewide F-RAM Features 64Kbit Ferroelectric Nonvolatile RAM • Organized as 8,192 x 8 bits • High Endurance 100 Trillion 1014 Read/Writes • 38 year Data Retention (@ +75C) • NoDelay Writes • Advanced High-Reliability Ferroelectric Process


    Original     		FM16W08 64Kbit FM16W08 64-kilobit 28-pin MS-013 FM16W08, 00002G FM16W08-SG FM16W08-SG AEC-Q100-002 PDF

    Contextual Info: Pre-Production FM1808B 256Kb Bytewide 5V F-RAM Memory Features 256Kbit Ferroelectric Nonvolatile RAM Organized as 32,768 x 8 bits High Endurance 1 Trillion 1012 Read/Writes 38 year Data Retention (@ 75°C) NoDelay Writes Advanced High-Reliability Ferroelectric Process


    Original     		FM1808B 256Kb 256Kbit 32Kx8 28-pin PDF

    Contextual Info: Preliminary FM1808B 256Kb Bytewide 5V F-RAM Memory Features 256Kbit Ferroelectric Nonvolatile RAM • Organized as 32,768 x 8 bits • High Endurance 1 Trillion 1012 Read/Writes • 38 year Data Retention (@ +75°C) • NoDelay Writes • Advanced High-Reliability Ferroelectric Process


    Original     		FM1808B 256Kb 256Kbit 32Kx8 28-piV 28-pin MS-013 FM1808B, 00002G FM1808B-SG PDF

    fm16w08

    Abstract: fm16w08-sg
    Contextual Info: Pre-Production FM16W08 64Kb Wide Voltage Bytewide F-RAM Features 64Kbit Ferroelectric Nonvolatile RAM • Organized as 8,192 x 8 bits  High Endurance 100 Trillion 1014 Read/Writes  38 year Data Retention (@ +75C)  NoDelay Writes  Advanced High-Reliability Ferroelectric Process


    Original     		FM16W08 64Kbit Temperature10 FM16W08, 00002G FM16W08-SG A103700002G fm16w08 PDF

    FM1808B

    Abstract: FM1808B-SG
    Contextual Info: Pre-Production FM1808B 256Kb Bytewide 5V F-RAM Memory Features 256Kbit Ferroelectric Nonvolatile RAM • Organized as 32,768 x 8 bits  High Endurance 1 Trillion 1012 Read/Writes  38 year Data Retention (@ +75C)  NoDelay Writes  Advanced High-Reliability Ferroelectric Process


    Original     		FM1808B 256Kb 256Kbit 32Kx8 28-pin FM1808B, 00002G FM1808B-SG A103700002G FM1808B PDF

    Contextual Info: Pre-Production FM1608B 64Kb Bytewide 5V F-RAM Memory Features 64Kbit Ferroelectric Nonvolatile RAM Organized as 8,192 x 8 bits High Endurance 1 Trillion 1012 Read/Writes 38 year Data Retention (@ +75 C) NoDelay Writes Advanced High-Reliability Ferroelectric Process


    Original     		FM1608B 64Kbit 28-pin PDF

    Contextual Info: Pre-Production FM18W08 256Kb Wide Voltage Bytewide F-RAM Features 256Kbit Ferroelectric Nonvolatile RAM Organized as 32,768 x 8 bits High Endurance 100 Trillion 1014 Read/Writes 38 year Data Retention NoDelay Writes Advanced High-Reliability Ferroelectric Process


    Original     		FM18W08 256Kb 256Kbit 32Kx8 28-piness PDF

    Contextual Info: Preliminary FM1608B 64Kb Bytewide 5V F-RAM Memory Features 64Kbit Ferroelectric Nonvolatile RAM • Organized as 8,192 x 8 bits • High Endurance 1 Trillion 1012 Read/Writes • 38 year Data Retention (@ +75°C) • NoDelay Writes • Advanced High-Reliability Ferroelectric Process


    Original     		FM1608B 64Kbit 28-pin FM1608B, 00002G FM1608B-SG A103700002G PDF

    FM1808B-SG

    Contextual Info: Preliminary FM1808B 256Kb Bytewide 5V F-RAM Memory Features 256Kbit Ferroelectric Nonvolatile RAM • Organized as 32,768 x 8 bits • High Endurance 1 Trillion 1012 Read/Writes • 38 year Data Retention (@ +75°C) • NoDelay Writes • Advanced High-Reliability Ferroelectric Process


    Original     		FM1808B 256Kb 256Kbit 32Kx8 28-pi FM1808B, 00002G FM1808B-SG A103700002G PDF

    Contextual Info: Preliminary FM16W08 64Kb Wide Voltage Bytewide F-RAM Features 64Kbit Ferroelectric Nonvolatile RAM • Organized as 8,192 x 8 bits • High Endurance 100 Trillion 1014 Read/Writes • 38 year Data Retention (@ +75C) • NoDelay Writes • Advanced High-Reliability Ferroelectric Process


    Original     		FM16W08 64Kbit FM16W08 28-pin MS-013 FM16W08, 00002G FM16W08-SG A103700002G PDF

    Contextual Info: Pre-Production FM18W08 256Kb Wide Voltage Bytewide F-RAM Features 256Kbit Ferroelectric Nonvolatile RAM • Organized as 32,768 x 8 bits  High Endurance 100 Trillion 1014 Read/Writes  38 year Data Retention  NoDelay Writes  Advanced High-Reliability Ferroelectric Process


    Original     		FM18W08 256Kb 256Kbit FM18W08 256-kilobit FM18W08, 00002G FM18W08-SG A103700002G PDF

    Contextual Info: Pre-Production FM1808B 256Kb Bytewide 5V F-RAM Memory Features 256Kbit Ferroelectric Nonvolatile RAM • Organized as 32,768 x 8 bits  High Endurance 1 Trillion 1012 Read/Writes  38 year Data Retention (@ +75C)  NoDelay Writes  Advanced High-Reliability Ferroelectric Process


    Original     		FM1808B 256Kb 256Kbit FM1808B 256-kilobit FM1808B, 00002G FM1808B-SG A103700002G PDF