A113 FET Search Results

finder 94.74

Abstract: isolierte Steckh Faston finder 94.04 SCHRUMPFSCHLAUCH varistor NS 332 99.01.2.000.00 finder 55.32 Relais 12v DC relais vde 0435 varistor 222 ac
Contextual Info: Serie 55 - Industrie-Relais 7 - 10 A 55.12 55.13 55.14 Miniatur-Industrie-Relais für Leiterplatte oder steckbar • Spulen für AC und DC nach VDE 0435 / EN 61810-1 • Relaisschutzart: RT III waschdicht bei 55.12, 13, 14 erhältlich • Zeitrelais mit dem gleichen Pining wie

Contextual Info: Freescale Semiconductor Technical Data Document Number: MRF9582NT1 Rev. 0, 5/2006 Silicon Lateral FET, N - Channel Enhancement - Mode MOSFET MRF9582NT1 Designed for use in medium voltage, moderate power amplifiers such as portable analog and digital cellular radios and PC RF modems.

Contextual Info: Freescale Semiconductor Technical Data Document Number: MRF9582NT1 Rev. 0, 5/2006 Silicon Lateral FET, N - Channel Enhancement - Mode MOSFET MRF9582NT1 Designed for use in medium voltage, moderate power amplifiers such as portable analog and digital cellular radios and PC RF modems.

A113

Abstract: MRF9582NT1
Contextual Info: Freescale Semiconductor Technical Data Document Number: MRF9582NT1 Rev. 1, 7/2006 Silicon Lateral FET, N - Channel Enhancement - Mode MOSFET MRF9582NT1 Designed for use in medium voltage, moderate power amplifiers such as portable analog and digital cellular radios and PC RF modems.

Case 449-02

Abstract: A113 MRF9582NT1
Contextual Info: Freescale Semiconductor Technical Data Silicon Lateral FET, N - Channel Enhancement - Mode MOSFET MRF9582NT1 Designed for use in medium voltage, moderate power amplifiers such as portable analog and digital cellular radios and PC RF modems. • Typical CW RF Performance @ 849 MHz: VDD = 12.5 Volts, IDQ = 300 mA,

zener diode marking R11

Abstract: 5.1 ch amplifier circuit diagram ZENER MARKING r12 "Amplifier Modules" 5.1 v zener RG4 DIODE jedec 0603
Contextual Info: Freescale Semiconductor Technical Data Rev. 4, 1/2005 Gallium Arsenide CATV Integrated Amplifier Module Features • Specified for 79 - , 112 - and 132 - Channel Loading • Excellent Distortion Performance • Built - in Input Diode Protection • GaAs FET Transistor Technology

A113

Abstract: CTB112 CTB132 XMD112 XMD132
Contextual Info: Freescale Semiconductor Technical Data Document Number: MMG2001NT1 Rev. 6, 3/2007 Features • Specified for 79 - , 112 - and 132 - Channel Loading • Excellent Distortion Performance • Higher Output Capability • Built - in Input Diode Protection • GaAs FET Transistor Technology

Contextual Info: Document Number: MMG2001NT1 Rev. 6, 3/2007 Freescale Semiconductor Technical Data Features • Specified for 79 - , 112 - and 132 - Channel Loading • Excellent Distortion Performance • Higher Output Capability • Built - in Input Diode Protection • GaAs FET Transistor Technology

5.1 ch amplifier circuit diagram

Abstract: ZENER MARKING r12
Contextual Info: Freescale Semiconductor Technical Data MMG1001 Rev. 4, 1/2005 Gallium Arsenide CATV Integrated Amplifier Module Features • Specified for 79−, 112− and 132−Channel Loading • Excellent Distortion Performance • Built−in Input Diode Protection • GaAs FET Transistor Technology

crcw06031000fkta

Abstract: ZENER DIODE t2 CRCW06031200FKTA Chip Resistors Mounting GaAs FET chip HK160822NJ-T A113 CTB112 CRCW06032001FKTA MMG1001NT1
Contextual Info: Freescale Semiconductor Technical Data Document Number: MMG1001NT1 Rev. 8, 3/2007 Features • Specified for 79 - , 112 - and 132 - Channel Loading • Excellent Distortion Performance • Built - in Input Diode Protection • GaAs FET Transistor Technology

crcw06031000fkta

Abstract: CRCW06031200FKTA CRCW06030000FKTA CRCW06032001FKTA GaAs FET chip A113 CTB112 CTB132 MMG1001NT1 XMD112
Contextual Info: Freescale Semiconductor Technical Data Gallium Arsenide CATV Integrated Amplifier Module LIFETIME BUY Features • Specified for 79 - , 112 - and 132 - Channel Loading • Excellent Distortion Performance • Built - in Input Diode Protection • GaAs FET Transistor Technology

1.5SMC27AT3G

Contextual Info: Document Number: MMG1001NT1 Rev. 8, 3/2007 Freescale Semiconductor Technical Data Features • Specified for 79 - , 112 - and 132 - Channel Loading • Excellent Distortion Performance • Built - in Input Diode Protection • GaAs FET Transistor Technology

Contextual Info: Freescale Semiconductor Technical Data Document Number: MRFG35003N6 Rev. 6, 1/2008 MRFG35003N6T1 replaced by MRFG35003N6AT1. MRFG35003N6T1 Gallium Arsenide PHEMT RF Power Field Effect Transistor 3.5 GHz, 3 W, 6 V POWER FET GaAs PHEMT • Typical W - CDMA Performance: - 42 dBc ACPR, 3.55 GHz, 6 Volts,

6 017 03 61

Abstract: A113 MRFG35010ANT1 MRFG35010NT1 Z16C20
Contextual Info: Freescale Semiconductor Technical Data Document Number: MRFG35010N Rev. 7, 1/2008 MRFG35010NT1 replaced by MRFG35010ANT1. MRFG35010NT1 Gallium Arsenide PHEMT RF Power Field Effect Transistor 3.5 GHz, 9 W, 12 V POWER FET GaAs PHEMT • Typical W - CDMA Performance: - 42 dBc ACPR, 3.55 GHz, 12 Volts,

Contextual Info: Freescale Semiconductor Technical Data Document Number: MRFG35010N Rev. 7, 1/2008 MRFG35010NT1 replaced by MRFG35010ANT1. MRFG35010NT1 Gallium Arsenide PHEMT RF Power Field Effect Transistor 3.5 GHz, 9 W, 12 V POWER FET GaAs PHEMT • Typical W - CDMA Performance: - 42 dBc ACPR, 3.55 GHz, 12 Volts,

600S3R9BT

Abstract: GPS2020 4350B A113 A114 A115 AN1955 AN1987 C101 JESD22
Contextual Info: Freescale Semiconductor Technical Data Document Number: MW5IC970NBR1 Rev. 1, 5/2006 RF LDMOS Wideband 2 - Stage Power Amplifiers Designed for broadband commercial and industrial applications with frequencies from 132 MHz to 960 MHz. The high gain and broadband performance of

s 0938

Abstract: 1348 c23
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA This document contains information on a new product. Specifications and information herein are subject to change without notice. MRFG35010MT1 Advance Information The RF GaAs Line Gallium Arsenide PHEMT 3.5 GHz, 9 W, 12 V

3332-G

Contextual Info: Freescale Semiconductor Technical Data Rev. 3, 1/2005 RF LDMOS Wideband Integrated Power Amplifiers The MW4IC2230 wideband integrated circuit is designed for W - CDMA base station applications. It uses Freescale’s newest High Voltage 26 to 28 Volts LDMOS IC technology and integrates a multi - stage structure. Its wideband

TRANSISTOR 0835

Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA This document contains information on a new product. Specifications and information herein are subject to change without notice. MRFG35003M6T1 Advance Information The RF GaAs Line Gallium Arsenide PHEMT 3.5 GHz, 3 W, 6 V

transistor A106

Abstract: transistor PNP A105 transistor pnp a110 TRANSISTOR A107 a69 156 transistor A94 TRANSISTOR A114 TRANSISTOR a105 A107 capacitor TRANSISTOR A98 motorola mosfet
Contextual Info: N LM2639 Evaluation Board V.2 Test Procedures 4/9/99 The LM2639 evaluation board V.2 is designed to handle 20A output current under room temperature with no air flow. Efficiency is around 80% at 2V, 20A. With very little air flow, such as that provided by a typical ATX power supply Muffin fan, the board can handle 25A to 30A

Rogers 4350B

Abstract: GPS2020 ECJ4YF1H106Z surface mounted fuse, moisture sensitivity level 4350B A113 A114 A115 AN1955 AN1987
Contextual Info: Freescale Semiconductor Technical Data Document Number: MW5IC970NBR1 Rev. 0, 4/2006 RF LDMOS Wideband 2 - Stage Power Amplifiers Designed for broadband commercial and industrial applications with frequencies from 132 MHz to 960 MHz. The high gain and broadband performance of

Contextual Info: Freescale Semiconductor Technical Data MMG2001 Rev. 1, 1/2005 Gallium Arsenide CATV Integrated Amplifier Module Features • Specified for 79−, 112− and 132−Channel Loading • Excellent Distortion Performance • Higher Output Capability • Built−in Input Diode Protection

Contextual Info: Freescale Semiconductor Technical Data Document Number: MMG2001NT1 Rev. 5, 10/2006 Gallium Arsenide CATV Integrated Amplifier Module Features • Specified for 79 - , 112 - and 132 - Channel Loading • Excellent Distortion Performance • Higher Output Capability

Contextual Info: Freescale Semiconductor Technical Data Rev. 4, 1/2005 RF LDMOS Wideband Integrated Power Amplifiers The MW4IC915MB/GMB wideband integrated circuit is designed for GSM and GSM EDGE base station applications. It uses Freescale’s newest High Voltage 26 to 28 Volts LDMOS IC technology and integrates a multi - stage