A12A 24 Search Results
A12A 24 Result Highlights (1)
Part | ECAD Model | Manufacturer | Description | Download | Buy |
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TPS36BA12ACADDFRQ1 |
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Automotive, nano-quiescent-current, precision supervisor with window-watchdog timer 8-SOT-23-THIN -40 to 125 |
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A12A 24 Price and Stock
Inventus Power MWA150024A-12ADesktop AC Adapters 24V 6.3A 150W 7.56 x 2.45 x 1.52 |
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MWA150024A-12A | 432 |
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Phihong USA PYA12A050240Wall Mount AC Adapters 12W 5V 2.4A US Fix Blade 2.1x5.5 DOE VII Ready |
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PYA12A050240 | 67 |
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Inventus Power MWA220024A-12ADesktop AC Adapters 220W 24V 9.2A - MED CLASS I |
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MWA220024A-12A |
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OTTO Engineering Inc HTWM-1A12A24Industrial Hall Effect / Magnetic Sensors Mini Hall Effect Thumbwheel Switch |
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HTWM-1A12A24 |
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HTWM-1A12A24 | 3 |
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OTTO Engineering Inc HTWF-1A12A24AIndustrial Hall Effect / Magnetic Sensors Thumbwheel +/- 30o 0.5-4.5VDC Pddl |
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HTWF-1A12A24A |
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HTWF-1A12A24A | 3 |
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A12A 24 Datasheets Context Search
Catalog Datasheet | Type | Document Tags | |
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Contextual Info: XS1-A12A-128-FB217 Datasheet 2013/12/09 XMOS 2013, All Rights Reserved Document Number: X9253, XS1-A12A-128-FB217 Datasheet 1 Table of Contents 1 xCORE Multicore Microcontrollers . . 2 XS1-A12A-128-FB217 Features . . . 3 Pin Configuration . . . . . . . . . . . |
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XS1-A12A-128-FB217 X9253, | |
203d6Contextual Info: Bowmar/lHfhite 128K x 8 BIT SRAM C8-M128 SERIES Technology PIN DIAGRAM NC □ 1 A16 C 2 A14 □ A12 □ A7 32 3 V c c 31 □ A 15 3 30 3 N C 4 24 □ W E c 5 6 28 3 A 13 27 □ A 8 A6 c A5 c A4 A3 c 8 c 9 c 10 A1 □ 11 AD □ 12 21 DO □ 13 20 3 D6 D1 □ |
OCR Scan |
C8-M128 120nS 15A14 12A10-- 203d6 | |
Contextual Info: 3ÔE D MICRON TECHNOLOGY INC blllSM'l QGQ3G2Q 1 • MRN r - % - n - ìz aìa r CACHE DATA STATIC RAM DUAL 4Kx 18 SRAM, SINGLE 8Kx 18 SRAM CONFIGURABLE CACHE DATA SRAM FEATURES PIN ASSIG N M EN T Top View • Automatic WRITE cycle completion • Operates as two 4K x 18 SRAMs with common |
OCR Scan |
33MHz 25MHz | |
A17a
Abstract: diode A14A a43a SMA33CA A6.5CA SMA12CA a13a A45A A78A A18A marking
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2002/95/EC A17a diode A14A a43a SMA33CA A6.5CA SMA12CA a13a A45A A78A A18A marking | |
A91A
Abstract: A18A a39a mur 4520 A30A A11A a68a a75a btp 506 A36A
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OCR Scan |
TPSMA43A A91A A18A a39a mur 4520 A30A A11A a68a a75a btp 506 A36A | |
DUP1Contextual Info: FIJCRON TECHNOLOGY INC MICRON SSE T> • blllSMT DD037M3 DT4 ■ URN M T56C 2818 8 K x 18, DUAL 4 K x 18 C A CH E DATA SRAM ■ - ; CACHE DATA -0 4 - q q a i i |
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DD037M3 8Kx18 66MHz b00D37S2 DUP1 | |
mt90c
Abstract: MT56C0816EJ-25 mt56c0816
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OCR Scan |
MT56C0816 DUAL4KX16 52-Pin MT56CO016 mt90c MT56C0816EJ-25 | |
Contextual Info: M IC R O N * MT56C2818 8 K x 18, DUAL 4 K x 18 CACHE DATA SRAM CACHE DATA SRAM SINGLE 8Kx18 SRAM, DUAL 4KX18SRAM CONFIGURABLE CACHE DATA SRAM FEATURES PIN ASSIGNMENT Top View • A u tom atic W RITE cycle com pletion • O p erates a s tw o 4K x 18 SR A M s w ith com m on |
OCR Scan |
MT56C2818 8Kx18 4KX18SRAM | |
MARKING CODE LT DO-214AC
Abstract: marking 15C SMA TVS IEC801-2 IEC801-4 P4SMA10CA P4SMA220CA p4sma75a
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P4SMA220CA IEC801-2) IEC801-4) 10/1000us 10psec. 50mVpp MARKING CODE LT DO-214AC marking 15C SMA TVS IEC801-2 IEC801-4 P4SMA10CA P4SMA220CA p4sma75a | |
ATT7C314JContextual Info: iATsT Data Sheet November 1991 rMicroelectronics A TT7C 314J S ta tic , D u al-P o rt RAM 72K 8192 w ords x 9 b its Benefits Features • Full internal contention resolution transparent to the user ■ Word-size expansion capability ■ Parity bit available with 9-bit organization |
OCR Scan |
ATT7C31ample, ATT7C314J 68-Pin | |
Contextual Info: QS88180, Q QS88160 High-Speed CMOS Dual 4Kx16/18 SRAM with Latched Addresses QS88180 QS88160 FEATURES/BENEFITS • • • • Dual 4Kx18/16 allows 2-way set associative cache Byte enables for byte/Word read/write 20ns/25 ns/30ns/35 ns Taa Available in 52-pin PLCC |
OCR Scan |
QS88180, QS88160 4Kx16/18 QS88180 4Kx18/16 20ns/25 ns/30ns/35 52-pin 16-bit | |
a13b 5 pin
Abstract: A13B AMB0480 diode A14A IDTAMB0480 DDR2-533 DDR2-667 ADVANCED COMMUNICATION DEVICES A12A a12b 5 pin
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IDTAMB0480 AMB0480xxRJ8 AMB0480xxRJ AMB0480xxRH8 AMB0480xxRH a13b 5 pin A13B AMB0480 diode A14A IDTAMB0480 DDR2-533 DDR2-667 ADVANCED COMMUNICATION DEVICES A12A a12b 5 pin | |
Contextual Info: IDTAMB0480 ADVANCED MEMORY BUFFER FOR FULLY BUFFERED DIMM COMMERCIAL TEMPERATURE RANGE ADVANCED MEMORY BUFFER FOR FULLY BUFFERED DIMM MODULES DESCRIPTION: FEATURES: Advanced Memory Buffer for Fully buffered DIMMs 3.2 and 4 Gbit/s serial speeds DDR2-533 and 667 DRAM |
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IDTAMB0480 DDR2-533 AMB0480xxRJ8 AMB0480xxRJ AMB0480xxRH8 AMB0480xxRH | |
Contextual Info: QS88180, Q QS88160 High-Speed CMOS Dual 4Kx16/18 SRAM with Latched Addresses QS88180 QS88160 FEATURES/BENEFITS • Dual 4Kx18/16 allows 2-way set associative cache • Byte enables for byte/word read/write • 20ns/25 ns/30ns/35 ns Taa • Available in 52-pin PLCC |
OCR Scan |
QS88180, QS88160 4Kx16/18 QS88180 4Kx18/16 20ns/25 ns/30ns/35 52-pin 16-bit | |
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5DOF
Abstract: A12U HY628400 HAB 20-S
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HY628400 512Kx 288x8-bits speed-55/70/85/100ns 00b353 1DE01 -11-MAY95 5DOF A12U HAB 20-S | |
Contextual Info: QS88180, ô QS88160 High-Speed CMOS Dual 4Kx16/18 SRAM with Latched Addresses QS88180 QS88160 Preliminary FEATURES/BENEFITS • • • • • Dual 4Kx18/16 allows 2-way set associative cache Byte enables for byte/word read/write 20ns/25 ns/30ns/35 ns Taa commercial |
OCR Scan |
QS88180, QS88160 4Kx16/18 QS88180 4Kx18/16 20ns/25 ns/30ns/35 ns/30ns/35/45 MIL-STD-883, | |
R343C
Abstract: MIL-STD-883 Method 1019 UT28F256
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OCR Scan |
UT28F256 140mA MIL-STD-883, MIL-I-38535 R343C MIL-STD-883 Method 1019 | |
AEB DP1
Abstract: 0588 82385 A12A D815
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OCR Scan |
QS88180, QS88160 4Kx16/18 QS88180 QS88160 4Kx18/16 20ns/25 ns/30ns/35 ns/30ns/35/45 MIL-STD-883, AEB DP1 0588 82385 A12A D815 | |
Contextual Info: 4<ÌE D P r e v ie w • SöböMSb DDGlObl 5 h 5 ■ MMHS I H I I f T M S e p te m b e r 1 9 9 0 NATRA M H S HM 65688 DATASHEET 16kx4 ULTIMATE CMOS SRAM FEATURES ACCESS TIME MILITARY/INDUSTRIAL : 45/55 ns max COMMERCIAL : 35/45 ns (max) VERY LOW POWER CONSUMPTION |
OCR Scan |
16kx4 | |
Contextual Info: bEM'ìflSS 00SH2S3 MITSUBISHI LSIs 3D7 • M I T I M5M51008AP,FP,VP,RV-55L,-55LL 1048576-BIT 131072-WORD BY 8-BIT CM0S STATIC RAM DESCRIPTION The M 5 M 5 1 0 0 8 A P , FP, VP, RV are a 1 0 4 8 5 7 6 -b it CMOS PIN CONFIGURATION (TOP VIEW) static R A M organized as .131072 w ord by 8 - bit w hich are |
OCR Scan |
00SH2S3 M5M51008AP RV-55L -55LL 1048576-BIT 131072-WORD | |
A13B
Abstract: DQ17A-DQ0A A14B DQ4a DQ11A
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AS9C25512M2018L 19-bit A13B DQ17A-DQ0A A14B DQ4a DQ11A | |
A17a
Abstract: HY628400LLG55 HY628400LLG 6da6 HY628400LG A18A HY628400 tsop 338 IR 1A13 DA16
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OCR Scan |
HY628400 512KX 288x8-bits speed-55/70/85/100ns 1DE01 -11-MAY95 A17a HY628400LLG55 HY628400LLG 6da6 HY628400LG A18A tsop 338 IR 1A13 DA16 | |
A011 transistorContextual Info: QS88180, QS88160 High-Speed CMOS Dual 4Kx16/18 SRAM with Latched Addresses Q 7 QS88180 Q S88160 Preliminary FEATURES/BENEFITS • • • • • Dual 4Kx18/16 allows 2-way set associative cache Byte enables 1or byte/word read/write 20ns/25 ns/30ns/35 ns Taa commercial |
OCR Scan |
QS88180, QS88160 4Kx16/18 QS88180 S88160 4Kx18/16 20ns/25 ns/30ns/35 ns/30ns/35/45 MIL-STD-883, A011 transistor | |
F0016Contextual Info: “H Y U N D A I H Y 6 2 8 1 0 0 A S e r ie s 128K X 8-bit CMOS SRAM PRELIMINARY DESCRIPTION The HY628100A is a high-speed, low power and 131,072 x 8-bits CMOS static RAM fabricated using Hyundai’s high performance twin tub CMOS process technology. This high reliability process coupled with innovative circuit |
OCR Scan |
HY628100A HY628100AP HY628100ALP HY628100ALLP HY628100AG HY628100ALG HY628100ALLG HY628100AT1 F0016 |