A12B 5 PIN Search Results

Contextual Info: January 1992 Semiconductor & DM93S46 High-Speed 6-Bit Identity Comparator General Description The DM93S46 is a very high speed 6-bit identity compara­ tor. The device compares two words of up to six bits and indicates identity in less than 12 ns. It is easily expandable

93S46

Abstract: 93s46 8 pin
Contextual Info: January 1992 DM93S46 High-Speed 6-Bit Identity Comparator General Description The DM93S46 is a very high speed 6-bit identity compara­ tor. The device compares two words of up to six bits and indicates identity in less than 12 ns. It is easily expandable

a13b 5 pin

Abstract: A13B AMB0480 diode A14A IDTAMB0480 DDR2-533 DDR2-667 ADVANCED COMMUNICATION DEVICES A12A a12b 5 pin
Contextual Info: IDTAMB0480 ADVANCED MEMORY BUFFER FOR FULLY BUFFERED DIMM COMMERCIAL TEMPERATURE RANGE ADVANCED MEMORY BUFFER FOR FULLY BUFFERED DIMM MODULES IDTAMB0480 PRODUCT BRIEF FEATURES: DESCRIPTION: • • • • • The fully buffered dual in-line memory module FB-DIMM is the next

Contextual Info: IDTAMB0480 ADVANCED MEMORY BUFFER FOR FULLY BUFFERED DIMM COMMERCIAL TEMPERATURE RANGE ADVANCED MEMORY BUFFER FOR FULLY BUFFERED DIMM MODULES DESCRIPTION: FEATURES: Advanced Memory Buffer for Fully buffered DIMMs 3.2 and 4 Gbit/s serial speeds DDR2-533 and 667 DRAM

A13B

Abstract: DQ17A-DQ0A A14B DQ4a DQ11A
Contextual Info: July 2004 Preliminary Information AS9C25512M2018L 2.5V 512K X 18 Synchronous Dual-port SRAM with 3.3V or 2.5V interface Features • True Dual-Port memory cells that allow simultaneous access of the same memory location • Organisation: 524,288 x 18 bits

DQ20A

Abstract: A17a DQ18A be2a A13B
Contextual Info: July 2004 Preliminary Information AS9C25256M2036L 2.5V 256K X 36 Synchronous Dual-port SRAM with 3.3V or 2.5V interface Features • True Dual-Port memory cells that allow simultaneous access of the same memory location • Organisation: 262,144 x 36 bits

A17a

Abstract: a17b A18B-A0B diode A14A A14A A15A A16A AS9C25256M2018L AS9C25512M2018L DQ17A
Contextual Info: September 2004 Preliminary Information AS9C25512M2018L AS9C25256M2018L 2.5V 512/256K X 18 Synchronous Dual-port SRAM with 3.3V or 2.5V interface Features • True Dual-Port memory cells that allow simultaneous access of the same memory location • Organisation: 524,288/262,144 x 18[1]

A17A

Abstract: A15A a17b diode A14A A11A A13A A14A AS9C25128M2036L AS9C25256M2036L be0b
Contextual Info: September 2004 Preliminary Information AS9C25256M2036L AS9C25128M2036L 2.5V 256/128K X 36 Synchronous Dual-port SRAM with 3.3V or 2.5V interface Features • True Dual-Port memory cells that allow simultaneous access of the same memory location • Organisation: 262,144/131,072 x 36[1]

DQ25A

Abstract: DQ20A DQ18A
Contextual Info: SG578288FG8SZUU April 27, 2006 Ordering Information Part Numbers Description Module Speed SG578288FG8SZDG 128Mx78 80 * (1GB), DDR2, 244-pin Mini-DIMM,Unbuffered, ECC, 2-Channel (128Mx39 (40), 512MB per Channel), 64Mx8 Based, DDR2-533-444, 36.83mm, 3Ω DQ termination, Green

A12B

Abstract: A14B a17b DS1280 A10B A11B A13B DS1280FP-80
Contextual Info: DS1280 DS1280 3-Wire to Bytewide Converter Chip PIN ASSIGNMENT • Adapts JEDEC bytewide memory A2R A1B A1R A0B A0R RST CLK GND VCC DQE CEB CER WEB WER OEB OER FEATURES to a 3-wire serial port • Supports 512K bytes of memory • 68-pin version provides arbitration mechanisms for

dallas ds1280

Abstract: A12B A18B a17b DS1280 A10B A11B A13B DS1280FP-80
Contextual Info: DS1280 DS1280 3-Wire to Bytewide Converter Chip PIN ASSIGNMENT • Adapts JEDEC bytewide memory A2R A1B A1R A0B A0R RST CLK GND VCC DQE CEB CER WEB WER OEB OER FEATURES to a 3-wire serial port • Supports 512K bytes of memory • 68-pin version provides arbitration mechanisms for

DS1280s

Abstract: dallas ds1280
Contextual Info: DS1280 DS1280 DALLAS SEMICONDUCTOR 3-Wire to Bytewide Converter Chip FEATURES PIN CONNECTIONS • Adapts JEDEC bytewide memory to a 3-wire serial port • Supports 512K bytes of memory • 68-pin version provides arbitration mechanisms for dual port operation

ATT7C314J

Contextual Info: iATsT Data Sheet November 1991 rMicroelectronics A TT7C 314J S ta tic , D u al-P o rt RAM 72K 8192 w ords x 9 b its Benefits Features • Full internal contention resolution transparent to the user ■ Word-size expansion capability ■ Parity bit available with 9-bit organization

SN10

Abstract: SN13 a12b
Contextual Info: 240pin Fully Buffered DDR2 SDRAM DIMMs based on 2Gb 1st ver. This Hynix’s Fully Buffered DIMM is a high-bandwidth & large capacity channel solution that has a narrow host interface. Hynix’s FB-DIMM features novel architecture including the Advanced Memory Buffer that

SN10

Abstract: SN13 "Raw Card J" DDR DIMM 512m non-ecc SPD
Contextual Info: 240pin Fully Buffered DDR2 SDRAM DIMMs based on 1Gb 1st ver. This Hynix’s Fully Buffered DIMM is a high-bandwidth & large capacity channel solution that has a narrow host interface. Hynix’s FB-DIMM features novel architecture including the Advanced Memory Buffer that isolates the DDR2

HYMP351F72AMP4D2-C4

Abstract: A13A dram card 60 SN10 SN13 hymp351f72amp4d2 DDR DIMM 512m non-ecc SPD DDR2 DIMM
Contextual Info: 240pin Fully Buffered DDR2 SDRAM DIMMs based on 1Gb A ver. This Hynix’s Fully Buffered DIMM is a high-bandwidth & large capacity channel solution that has a narrow host interface. Hynix’s FB-DIMM features novel architecture including the Advanced Memory Buffer that

NEC A15A

Abstract: dram card 60 SN13
Contextual Info: 240pin Fully Buffered DDR2 SDRAM DIMMs based on 1Gb A ver. This Hynix’s Fully Buffered DIMM is a high-bandwidth & large capacity channel solution that has a narrow host interface. Hynix’s FB-DIMM features novel architecture including the Advanced Memory Buffer that

Contextual Info: 240pin Fully Buffered DDR2 SDRAM DIMMs based on 1Gb E-ver. This Hynix’s Fully Buffered DIMM is a high-bandwidth & large capacity channel solution that has a narrow host interface. Hynix’s FB-DIMM features novel architecture including the Advanced Memory Buffer that

Contextual Info: 240pin Fully Buffered DDR2 SDRAM DIMMs based on 512 Mb B-ver. This Hynix’s Fully Buffered DIMM is a high-bandwidth & large capacity channel solution that has a narrow host interface. Hynix’s FB-DIMM features novel architecture including the Advanced Memory Buffer that

hynix DDR2 800 1GB SO DIMM

Abstract: HMP564F7FFP8C
Contextual Info: 240pin Fully Buffered DDR2 SDRAM DIMMs based on 512 Mb F-ver. This Hynix’s Fully Buffered DIMM is a high-bandwidth & large capacity channel solution that has a narrow host interface. Hynix’s FB-DIMM features novel architecture including the Advanced Memory Buffer that

SSTV16857

Abstract: DDR 333 pc2700 RDIMM PC2100 SN74SSTV32867 SN74SSTV32877 SN74SSTVF16857 SSTVF16857 a2b 340
Contextual Info: Application Report SCEA031 - January 2003 Application of the SN74SSTVF16857 in Planar PC2700 DDR-333 RDIMMs Tomdio Nana and Roland Pang Standard Linear & Logic ABSTRACT The high-capacity memory modules used in servers and workstations present a complex load to the memory controller used in these high-reliability, high-performance systems. To

HYMP151L72CP4

Contextual Info: 240pin Fully Buffered DDR2 SDRAM DIMMs based on 1Gb C-ver. This Hynix’s Fully Buffered DIMM is a high-bandwidth & large capacity channel solution that has a narrow host interface. Hynix’s FB-DIMM features novel architecture including the Advanced Memory Buffer that

Contextual Info: 240pin Fully Buffered DDR2 SDRAM DIMMs based on 512 Mb F-ver. This Hynix’s Fully Buffered DIMM is a high-bandwidth & large capacity channel solution that has a narrow host interface. Hynix’s FB-DIMM features novel architecture including the Advanced Memory Buffer that

Contextual Info: 240pin Fully Buffered DDR2 SDRAM DIMMs based on 512 Mb B-ver. This Hynix’s Fully Buffered DIMM is a high-bandwidth & large capacity channel solution that has a narrow host interface. Hynix’s FB-DIMM features novel architecture including the Advanced Memory Buffer that