A170 VS Search Results

Contextual Info: biME D • 7ET4b21 □ □□bc!3fl 53b H P R X A170 R Powerex, Inc., 200 HHIIs Street, Youngwood, Pennsylvania 15697-1800 (412) 925-7272 Powerex, Europe, S.A. 428 Avenue G. Durand, BP107, 72003 Le Mans, France (43) 41.14.14 POülEREX INC SHÎCO/l R&Ctifî&r

a1870

Abstract: 1N5162 A187A 1N3261 1N3262 A170A A177 A180 A180A A187
Contextual Info: RECTIFIERS 100 TO 150 AMPERES JIE DEC TYPE 1N3289-96 GE TYPE SPECIFICATIONS •f A170 A177 - A 180 A 187 A V operation) 100 100 100 160 150 150 T c = <°C> 130 130 130 125 143 110 Max. average fo rw a rd cu rre n t (1 phase m 1N3260-75 A70 V RM (surge)

BP107

Abstract: A170 A170PM hi voltage rectifier 50 amperes
Contextual Info: A _ A170 R Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 (412) 925-7272 Powerex, Europe, S.A. 428 Avenue G. Durand, BP107, 72003 Le Mans, France (43) 41.14.14 SUiCOfì ROCtÌfÌGr ^ q q A m p e re s A v e ra g e

A180P

Abstract: a1870 GE a70b a170 VS A177M 1N3261 1N3262 A170A A170M A180
Contextual Info: RECTIFIERS 100 TO 150 AMPERES 1N3289-96 JIE DEC T Y P E 1N3260-75 GE T Y P E A70 A170 A177 - A180 A187 SPEC IFICATIO N S Max. average forward current 1 phase •f m ( A V operation) 100 100 100 160 150 150 130 130 130 125 143 110 T c = <°C> V RM (surge)

Burndy penetrox

Abstract: Burndy penetrox A penetrox a70p penetrox A 1N3290R a1870 A187E ge 1n3289 1N3261
Contextual Info: RECTIFIERS 100 TO 150 AMPERES JIE DEC TYPE 1N 3 2 8 9 -9 6 1 N 3 2 6 0 -7 5 A70 A170 A177 - A180 A187 A V operation) 100 100 100 160 150 150 T c = <°C> 130 130 130 125 143 110 GE TYPE SP E C IF IC A T IO N S •f Max. average forward current (1 phase

AS 15 -g

Abstract: WED8L24257V
Contextual Info: WED8L24257V Asynchronous SRAM, 3.3V, 256Kx24 FEATURES DESCRIPTION 256Kx24 bit CMOS Static The WED8L24257VxxBC is a 3.3V, twelve megabit SRAM constructed with three 256Kx8 die mounted on a multi-layer laminate substrate. With 10 to 15ns access times, x24 width and a 3.3V

a1870

Abstract: A137N 1N3261 1N3262 A170A A177 A180 A180A A187 A187A
Contextual Info: FAST R EC O VER Y RECTIFIERS SELECTOR GUIDE 2000 1500 1000 « 900 600 700 § 500 s 400 5 300 § 200 ! j 600 z H _l O > fOO 90 80 70 60 50 I 3 6 12 20 25 3 0 100 140 2 5 0 4 0 0 75 0 IK AVERAGE CURRENT-AMPERES S T A N D A R D RECTIFIERS SELECTOR GUIDE 3000

WED8L24257V

Abstract: DSP5630X
Contextual Info: WED8L24257V Asynchronous SRAM, 3.3V, 256Kx24 FEATURES DESCRIPTION n 256Kx24 bit CMOS Static The WED8L24257VxxBC is a 3.3V, twelve megabit SRAM constructed with three 256Kx8 die mounted on a multi-layer laminate substrate. With 10 to 15ns access times, x24 width and a 3.3V

Contextual Info: W49F020 256K x 8 CMOS FLASH MEMORY 1. GENERAL DESCRIPTION The W49F020 is a 2-megabit, 5-volt only CMOS flash memory organized as 256K × 8 bits. The device can be programmed and erased in-system with a standard 5V power supply. A 12-volt VPP is not required. The unique cell architecture of the W49F020 results in fast program/erase operations with

W49L401

Abstract: W49L401T
Contextual Info: W49L401 T 256K x 16 CMOS FLASH MEMORY 1. GENERAL DESCRIPTION The W49L401(T) is a 4-megabit, 3.3-volt only CMOS flash memory organized as 256K × 16 bits. The device can be programmed and erased in-system with a standard 3.3-volt power supply. A 12-volt VPP

Contextual Info: W49F020 256K x 8 CMOS FLASH MEMORY 1. GENERAL DESCRIPTION The W49F020 is a 2-megabit, 5-volt only CMOS flash memory organized as 256K × 8 bits. The device can be programmed and erased in-system with a standard 5V power supply. A 12-volt VPP is not required. The unique cell architecture of the W49F020 results in fast program/erase operations with

winbond w49f002up12b

Abstract: W49F002UP12B WINBOND W49F002U-12B W49F002U-12B Winbond W49F002U W49F002U
Contextual Info: W49F002U 256K x 8 CMOS FLASH MEMORY GENERAL DESCRIPTION The W49F002U is a 2-megabit, 5-volt only CMOS flash memory organized as 256K × 8 bits. The device can be programmed and erased in-system with a standard 5V power supply. A 12-volt VPP is not required. The unique cell architecture of the W49F002U results in fast program/erase operations

W49F020T

Abstract: W49F020
Contextual Info: W49F020 256K x 8 CMOS FLASH MEMORY 1. GENERAL DESCRIPTION The W49F020 is a 2-megabit, 5-volt only CMOS flash memory organized as 256K × 8 bits. The device can be programmed and erased in-system with a standard 5V power supply. A 12-volt VPP is not required. The unique cell architecture of the W49F020 results in fast program/erase operations with

W49F002A-12

Abstract: ortec 142 W49F002A ortec 533
Contextual Info: Preliminary W49F002A 256K x 8 CMOS FLASH MEMORY GENERAL DESCRIPTION The W49F002A is a 2-megabit, 5-volt only CMOS flash memory organized as 256K × 8 bits. The device can be programmed and erased in-system with a standard 5V power supply. A 12-volt VPP is

tpec

Abstract: XX555 W49L401 W49L401T
Contextual Info: W49L401 T 256K x 16 CMOS FLASH MEMORY GENERAL DESCRIPTION The W49L401(T) is a 4-megabit, 3.3-volt only CMOS flash memory organized as 256K × 16 bits. The device can be programmed and erased in-system with a standard 3.3-volt power supply. A 12-volt VPP

w49f002up12b

Abstract: W49F002U-12B W49F002U
Contextual Info: W49F002U 256K x 8 CMOS FLASH MEMORY GENERAL DESCRIPTION The W49F002U is a 2-megabit, 5-volt only CMOS flash memory organized as 256K × 8 bits. The device can be programmed and erased in-system with a standard 5V power supply. A 12-volt VPP is not required. The unique cell architecture of the W49F002U results in fast program/erase operations

W29F002

Abstract: W49F002 W49F002B W49F002N W49F002U n70b a170 VS W29F W29F002B
Contextual Info: Preliminary W49F002/B/U/N 256K x 8 CMOS FLASH MEMORY GENERAL DESCRIPTION The W49F002/B/U/N is a 2-megabit, 5-volt only CMOS flash memory organized as 256K × 8 bits. The device can be programmed and erased in-system with a standard 5V power supply. A 12-volt

W29F020

Abstract: W49F020 W49F020-70 W49F020-90
Contextual Info: Preliminary W49F020 256K x 8 CMOS FLASH MEMORY GENERAL DESCRIPTION The W49F020 is a 2-megabit, 5-volt only CMOS flash memory organized as 256K × 8 bits. The device can be programmed and erased in-system with a standard 5V power supply. A 12-volt VPP is not

Contextual Info: Preliminary W49F002U 256K x 8 CMOS FLASH MEMORY GENERAL DESCRIPTION The W49F002U is a 2-megabit, 5-volt only CMOS flash memory organized as 256K × 8 bits. The device can be programmed and erased in-system with a standard 5V power supply. A 12-volt VPP is

W49F002U12BN

Abstract: W49F002U w49f002up12b W49F002UP W49F002UP12N W49F002U90BN W49F002U-12B
Contextual Info: W49F002U 256K x 8 CMOS FLASH MEMORY GENERAL DESCRIPTION The W49F002U is a 2-megabit, 5-volt only CMOS flash memory organized as 256K × 8 bits. The device can be programmed and erased in-system with a standard 5V power supply. A 12-volt VPP is not required. The unique cell architecture of the W49F002U results in fast program/erase operations

W49F002U12BN

Abstract: W49F002UP12Z winbond w49f002up12b W49F002U-12BN W49F002U90BN W49F002U-12B W49F002UP12B
Contextual Info: W49F002U Data Sheet 256K x 8 CMOS FLASH MEMORY Table of Content1. 2. 3. 4. 5. 6. GENERAL DESCRIPTION . 3 FEATURES . 3

Contextual Info: FM22LD16 4-Mbit 256 K x 16 F-RAM Memory 2-Mbit (128 K × 16) F-RAM Memory Features Functional Overview • 4-Mbit ferroelectric random access memory (F-RAM) logically organized as 256 K × 16 ❐ Configurable as 512 K × 8 using UB and LB 14 ❐ High-endurance 100 trillion (10 ) read/writes

SST31LF021E

Abstract: 32-PIN
Contextual Info: 2 Megabit Flash + 1 Megabit SRAM ComboMemory SST31LF021E Advance Information FEATURES: • Organized as 256K x8 Flash + 128K x8 SRAM • Latched Address and Data for Flash • Single 3.0-3.6V Read and Write Operations • • Flash Fast Erase and Byte-Program:

SST31LF021

Abstract: SST31LF021E
Contextual Info: 2 Mbit Flash + 1 Mbit SRAM ComboMemory SST31LF021 / SST31LF021E SST31LF021 / 021E2Mb Flash x8 + 1Mb SRAM (x8) Monolithic ComboMemories Data Sheet FEATURES: • Monolithic Flash + SRAM ComboMemory – SST31LF021/021E: 256K x8 Flash + 128K x8 SRAM • Single 3.0-3.6V Read and Write Operations