A19 MARKING Search Results

IEC320-C8

Contextual Info: Issue Date: 2009-08-13 Page 1 of 3 Report Reference # E302267-A19-UL-1 COVER PAGE FOR TEST REPORT Product Category: Product Category CCN: Test Procedure: Product: Model/Type Reference: Power Supplies, Medical and Dental QQHM2, QQHM8 Component Recognition AC-DC Adaptor

Contextual Info: • A23SbOS 0035334 2 ■ SIEG Selection Guide SIEMENS AKTIEN6ESELLSCHAF M7E D EMI suppression chokes HF chokes, SMD chip inductors HF chokes, axial and unidirectional 0752 E—05 A19 M7E » ■ A23SbDS Q03flM33 M « S I E 6 B82412 EMI Suppression Chokes SIEMENS AKTIENGESELLSCHAF

A13 smd

Abstract: SMD a7 Transistor MT5C1001 a15 SMD
Contextual Info: SRAM MT5C1001 Limited Availability Austin Semiconductor, Inc. 1M x 1 SRAM PIN ASSIGNMENT Top View SRAM MEMORY ARRAY AVAILABLE AS MILITARY SPECIFICATIONS • SMD 5962-92316 • MIL-STD-883 A10 A11 A12 A13 A14 A15 NC A16 A17 A18 A19 Q WE\ Vss FEATURES •

smd transistor a9

Abstract: a15 SMD A19 SMD smd marking A5 10 35L A16 SMD SMD A18 Transistor SMD a7 Transistor smd diode a5 MT5C1001
Contextual Info: SRAM MT5C1001 Limited Availability Austin Semiconductor, Inc. 1M x 1 SRAM PIN ASSIGNMENT Top View SRAM MEMORY ARRAY AVAILABLE AS MILITARY SPECIFICATIONS • SMD 5962-92316 • MIL-STD-883 A10 A11 A12 A13 A14 A15 NC A16 A17 A18 A19 Q WE\ Vss FEATURES •

Contextual Info: Issue Date: 2005-12-05 Amendment 1 2006-04-03 Page 1 of 2 Report Reference # E135803-A19-UL-1 COVER PAGE FOR TEST REPORT Product Category: Product Category CCN: Test Procedure: Product: Model/Type Reference: Rating s : Power Supplies for Information Technology Equipment Including Electrical

Contextual Info: COMPONENT RESEARCH CO I bSE D • 53G3111 □□□□71T fill A19 Component Research METALLIZED POLYPHENYLENE SULFIDE A 1 9 S P E C IF IC A T IO N S CONSTRUCTION M etallized polyphenylene su lfid e d ie le ctric, herm etically sealed, extended metal film

Contextual Info: • A23SbOS 0035334 2 ■ SIE G Selection Guide SIEMENS AKTIEN6ESELLSCHAF M7E D EMI suppression chokes HF chokes, SMD chip inductors HF chokes, axial and unidirectional 0752 E—05 A19 M7E D ■ ô235bD5 QG3Ô437 1 « S I E G B82422 EMI Suppression Chokes

SMD MARKING A16

Contextual Info: SRAM MT5C1001 Limited Availability 1M x 1 SRAM PIN ASSIGNMENT Top View SRAM MEMORY ARRAY AVAILABLE AS MILITARY SPECIFICATIONS • SMD 5962-92316 • MIL-STD-883 A10 A11 A12 A13 A14 A15 NC A16 A17 A18 A19 Q WE\ Vss FEATURES • • • • • • • 32-Pin LCC (EC)

ts06 94V0

Abstract: GDH04 ADE02 ADE03 ADE04 ADE06 ADE08 ADE09 ADE10 ADF02
Contextual Info: A GD Series - Page A3 AD Series - Page A7 S Series - Page A11 DPU Series - Page A12 TS Series - Page A16 MRD Series - Page A17 DRD Series - Page A19 DRS Series - Page A27 Need more technical information? Consult your Thomas & Betts sales office listed on the back cover

ts06 94V0

Abstract: digital piano IC Augat Augat ADE02 10k resistor network SIP DRS-26 power resistor 0,25 ohms encapsulated rotary coded switch 16 positions DRS112 Augat mrd16s
Contextual Info: GD Series - Page A3 AD Series - Page A7 S Series - Page A11 DPU Series - Page A12 TS Series - Page A16 MRD Series - Page A17 DRD Series - Page A19 DRS Series - Page A27 Need more technical information? Consult your local Augat sales office AUGAT Inc. 452 John L. Dietsch Blvd.

NCL30082

Contextual Info: AND9131/D Designing a LED Driver with the NCL30080/81/82/83 www.onsemi.com Introduction As LED lighting finds its way into low wattage applications, lamp designers are challenged for a variety of conflicting requirements. Size is often dictated by the incumbent lamp and fixture size whether it’s A19, GU10,

A15NC

Abstract: A19 marking A18 marking
Contextual Info: SRAM FT5C1001 L 1M x 1 SRAM PIN ASSIGNMENT (Top View) SRAM MEMORY A. SPECIFICATIONS • Comm, Ind, Mil Temp • MIL-STD-883 M5004 non-compliant-B A10 A11 A12 A13 A14 A15 NC A16 A17 A18 A19 Q WE\ Vss FEATURES • • • • • • • 32-Pin LCC 32-Pin SOJ

a15 SMD

Contextual Info: SRAM MT5C1001 Limited Availability 1M x 1 SRAM PIN ASSIGNMENT Top View SRAM MEMORY ARRAY AVAILABLE AS MILITARY SPECIFICATIONS • SMD 5962-92316 • MIL-STD-883 A10 A11 A12 A13 A14 A15 NC A16 A17 A18 A19 Q WE\ Vss FEATURES • • • • • • • 32-Pin LCC (EC)

70pin ssop

Abstract: 64Mx32 D2732
Contextual Info: FEDR26V02G54N-02-01 OKI Semiconductor MR26V02G54N 64M–Word  32–Bit Page Mode Issue Date: Oct 19, 2006 P2ROM PIN CONFIGURATION TOP VIEW FEATURES Vcc 1 70 D28 Vss 2 69 D20 A24 3 68 D12 A23 4 67 D4 A22 5 66 D29 A21 6 65 D21 A20 7 64 D13 A19 8 63 D5 A18

Contextual Info: PRELIMINARY DATA SHEET MOS INTEGRATED CIRCUIT µ PD44321181, 44321361 32M-BIT ZEROSBTM SRAM FLOW THROUGH OPERATION Description The µPD44321181 is a 2,097,152-word by 18-bit and the µPD44321361 is a 1,048,576-word by 36-bit ZEROSB static RAM fabricated with advanced CMOS technology using full CMOS six-transistor memory cell.

Contextual Info: PRELIMINARY DATA SHEET MOS INTEGRATED CIRCUIT µ PD44321182, 44321362 32M-BIT ZEROSBTM SRAM PIPELINED OPERATION Description The µPD44321182 is a 2,097,152-word by 18-bit and the µPD44321362 is a 1,048,576-word by 36-bit ZEROSB static RAM fabricated with advanced CMOS technology using full CMOS six-transistor memory cell.

M15958

Abstract: MARKING C75
Contextual Info: PRELIMINARY DATA SHEET MOS INTEGRATED CIRCUIT µ PD44321181, 44321361 32M-BIT ZEROSBTM SRAM FLOW THROUGH OPERATION Description The µPD44321181 is a 2,097,152-word by 18-bit and the µPD44321361 is a 1,048,576-word by 36-bit ZEROSB static RAM fabricated with advanced CMOS technology using full CMOS six-transistor memory cell.

Contextual Info: PRELIMINARY DATA SHEET MOS INTEGRATED CIRCUIT µ PD44321181, 44321361 32M-BIT ZEROSBTM SRAM FLOW THROUGH OPERATION Description The µPD44321181 is a 2,097,152-word by 18-bit and the µPD44321361 is a 1,048,576-word by 36-bit ZEROSB static RAM fabricated with advanced CMOS technology using full CMOS six-transistor memory cell.

Contextual Info: PRELIMINARY DATA SHEET MOS INTEGRATED CIRCUIT µ PD44321182, 44321362 32M-BIT ZEROSBTM SRAM PIPELINED OPERATION Description The µPD44321182 is a 2,097,152-word by 18-bit and the µPD44321362 is a 1,048,576-word by 36-bit ZEROSB static RAM fabricated with advanced CMOS technology using full CMOS six-transistor memory cell.

Contextual Info: PRELIMINARY DATA SHEET MOS INTEGRATED CIRCUIT µ PD44321182, 44321362 32M-BIT ZEROSBTM SRAM PIPELINED OPERATION Description The µPD44321182 is a 2,097,152-word by 18-bit and the µPD44321362 is a 1,048,576-word by 36-bit ZEROSB static RAM fabricated with advanced CMOS technology using full CMOS six-transistor memory cell.

AN 15525

Abstract: transistor marking A19 DIODE marking A19 A19 marking RF2317 PCBA
Contextual Info: RF2317 LINEAR CATV AMPLIFIER RoHS Compliant & Pb-Free Product Typical Applications • CATV Distribution Amplifiers • Laser Diode Driver • Cable Modems • Return Channel Amplifier • Broadband Gain Blocks • Base Stations Product Description The RF2317 is a general purpose, low-cost high-linearity

48-PIN

Contextual Info: PRELIMINARY DATA SHEET MOS INTEGRATED CIRCUIT µPD23C16040BL, 23C16080BL 16M-BIT MASK-PROGRAMMABLE ROM 2M-WORD BY 8-BIT BYTE MODE / 1M-WORD BY 16-BIT (WORD MODE) PAGE ACCESS MODE Description The µPD23C16040BL and µPD23C16080BL are 16,777,216 bits mask-programmable ROM. The word organization is

transistor marking A19

Abstract: A6 marking
Contextual Info: DATA SHEET MOS INTEGRATED CIRCUIT PD44321181, 44321361 32M-BIT ZEROSBTM SRAM FLOW THROUGH OPERATION Description The μPD44321181 is a 2,097,152-word by 18-bit and the μPD44321361 is a 1,048,576-word by 36-bit ZEROSB static RAM fabricated with advanced CMOS technology using full CMOS six-transistor memory cell.

Contextual Info: DATA SHEET MOS INTEGRATED CIRCUIT PD44321182, 44321362 32M-BIT ZEROSBTM SRAM PIPELINED OPERATION Description The μPD44321182 is a 2,097,152-word by 18-bit and the μPD44321362 is a 1,048,576-word by 36-bit ZEROSB static RAM fabricated with advanced CMOS technology using full CMOS six-transistor memory cell.