A1962 TOSHIBA Search Results

A1962 TOSHIBA Result Highlights (5)

Part	ECAD Model	Manufacturer	Description	Download	Buy
TCR3DG28		Toshiba Electronic Devices & Storage Corporation	LDO Regulator, Fixed Output, 2.8 V, 300 mA, WCSP4E
TCKE812NA		Toshiba Electronic Devices & Storage Corporation	eFuse IC (electronic Fuse), 4.4 to 18 V, 5.0 A, Auto-retry, Fixed Over Voltage Clamp, WSON10B
TK2R4A08QM		Toshiba Electronic Devices & Storage Corporation	MOSFET, N-ch, 80 V, 100 A, 0.00244 Ohm@10V, TO-220SIS
TPH9R00CQH		Toshiba Electronic Devices & Storage Corporation	MOSFET, N-ch, 150 V, 64 A, 0.009 Ohm@10V, SOP Advance / SOP Advance(N)
CUZ30V		Toshiba Electronic Devices & Storage Corporation	Zener Diode, 30 V, USC

A1962 TOSHIBA Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
transistor a1962 Abstract: a1962 a1962 TOSHIBA Toshiba transistor A1962 2Sa1962 2SA1962 TOSHIBA TOSHIBA A1962 2SC5242 Contextual Info: A1962 TOSHIBA Transistor Silicon PNP Triple Diffused Type 2SA1962 Power Amplifier Applications Unit: mm • High breakdown voltage: VCEO = −230 V min • Complementary to 2SC5242 • Recommended for 80-W high-fidelity audio frequency amplifier output stage.	Original	2SA1962 2SC5242 transistor a1962 a1962 a1962 TOSHIBA Toshiba transistor A1962 2Sa1962 2SA1962 TOSHIBA TOSHIBA A1962 2SC5242	PDF
Toshiba transistor A1962 Abstract: a1962 TOSHIBA A1962 TOSHIBA A1962 transistor a1962 2SA1962 TOSHIBA 360MAX Contextual Info: A1962 TOSHIBA Transistor Silicon PNP Triple Diffused Type 2SA1962 Power Amplifier Applications Unit: mm • High breakdown voltage: VCEO = −230 V min • Complementary to 2SC5242 • Recommended for 80-W high-fidelity audio frequency amplifier output stage.	Original	2SA1962 2SC5242 2-16C1A Toshiba transistor A1962 a1962 TOSHIBA A1962 TOSHIBA A1962 transistor a1962 2SA1962 TOSHIBA 360MAX	PDF
Toshiba transistor A1962 Abstract: a1962 transistor a1962 TOSHIBA A1962 a1962 TOSHIBA 2SA1962 TOSHIBA 2SA1962 2SC5242 Contextual Info: A1962 TOSHIBA Transistor Silicon PNP Triple Diffused Type 2SA1962 Power Amplifier Applications Unit: mm • High breakdown voltage: VCEO = −230 V min • Complementary to 2SC5242 • Recommended for 80-W high-fidelity audio frequency amplifier output stage.	Original	2SA1962 2SC5242 Toshiba transistor A1962 a1962 transistor a1962 TOSHIBA A1962 a1962 TOSHIBA 2SA1962 TOSHIBA 2SA1962 2SC5242	PDF
Toshiba transistor A1962 Contextual Info: A1962 TOSHIBA Transistor Silicon PNP Triple Diffused Type 2SA1962 Power Amplifier Applications Unit: mm • High breakdown voltage: V CEO = −230 V min • Complementary to 2SC5242 • Recommended for 80-W high-fidelity audio frequency amplifier output stage.	Original	2SA1962 2SC5242 Toshiba transistor A1962	PDF
Contextual Info: A1962 TOSHIBA Transistor Silicon PNP Triple Diffused Type 2SA1962 Power Amplifier Applications Unit: mm • High breakdown voltage: VCEO = −230 V min • Complementary to 2SC5242 • Recommended for 80-W high-fidelity audio frequency amplifier output stage.	Original	2SA1962 2SC5242	PDF
transistor a1962 Abstract: Toshiba transistor A1962 A1962 2SA1962 TOSHIBA 2SA1962 transistor 2sc5242 a1962 TOSHIBA Contextual Info: A1962 TOSHIBA Transistor Silicon PNP Triple Diffused Type 2SA1962 Power Amplifier Applications • Unit: mm High breakdown voltage: V CEO = −230 V min • Complementary to 2SC5242 • Recommended for 80-W high-fidelity audio frequency amplifier output stage.	Original	2SA1962 2SC5242 2-16C1A transistor a1962 Toshiba transistor A1962 A1962 2SA1962 TOSHIBA 2SA1962 transistor 2sc5242 a1962 TOSHIBA	PDF