A2 SOT-23 MOSFET Search Results
A2 SOT-23 MOSFET Result Highlights (5)
Part | ECAD Model | Manufacturer | Description | Download | Buy |
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SSM3J332R |
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P-ch MOSFET, -30 V, -6 A, 0.042 Ω@-10 V, SOT-23F |
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SSM3J356R |
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P-ch MOSFET, -60 V, -2 A, 0.3 Ω@-10 V, SOT-23F |
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SSM3K361R |
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MOSFET, N-ch, 100 V, 3.5 A, 0.069 Ohm@10V, SOT-23F, AEC-Q101 |
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SSM3K341R |
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MOSFET, N-ch, 60 V, 6.0 A, 0.036 Ohm@10V, SOT-23F, AEC-Q101 |
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SSM3K357R |
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N-ch MOSFET, 60 V, 0.65 A, 1.8 Ω@5 V, SOT-23F, AEC-Q101 |
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A2 SOT-23 MOSFET Datasheets Context Search
Catalog Datasheet | Type | Document Tags | |
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Si2302DSContextual Info: Si2302DS N-Channel 1.25-W, 2.5-V Rated MOSFET Product Summary VDS V 20 rDS(on) (W) ID (A) 0.085 @ VGS = 4.5 V 2.8 0.115 @ VGS = 2.5 V 2.4 TO-236 (SOT-23) G 1 3 S D 2 Top View Si2302DS (A2)* *Marking Code Absolute Maximum Ratings (TA = 25_C Unless Otherwise Noted) |
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Si2302DS O-236 OT-23) S-53600--Rev. 22-May-97 | |
Si2302DSContextual Info: Si2302DS N-Channel 1.25-W, 2.5-V Rated MOSFET Product Summary VDS V 20 rDS(on) (W) ID (A) 0.085 @ VGS = 4.5 V 2.8 0.115 @ VGS = 2.5 V 2.4 TO-236 (SOT-23) G 1 3 S D 2 Top View Si2302DS (A2)* *Marking Code Absolute Maximum Ratings (TA = 25_C Unless Otherwise Noted) |
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Si2302DS O-236 OT-23) S-53600--Rev. 22-May-97 | |
Si2302DSContextual Info: Si2302DS Vishay Siliconix N-Channel 1.25-W, 2.5-V MOSFET PRODUCT SUMMARY VDS V 20 rDS(on) (W) ID (A) 0.085 @ VGS = 4.5 V 2.8 0.115 @ VGS = 2.5 V 2.4 TO-236 (SOT-23) G 1 3 S D 2 Top View Si2302DS (A2)* *Marking Code ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED) |
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Si2302DS O-236 OT-23) 18-Jul-08 | |
Si2302DSContextual Info: Si2302DS Vishay Siliconix N-Channel 1.25-W, 2.5-V MOSFET PRODUCT SUMMARY VDS V 20 rDS(on) (W) ID (A) 0.085 @ VGS = 4.5 V 2.8 0.115 @ VGS = 2.5 V 2.4 TO-236 (SOT-23) G 1 3 S D 2 Top View Si2302DS (A2)* *Marking Code ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED) |
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Si2302DS O-236 OT-23) S-53600--Rev. 22-May-97 | |
Si2302DSContextual Info: Si2302DS Vishay Siliconix N-Channel 1.25-W, 2.5-V MOSFET PRODUCT SUMMARY VDS V 20 rDS(on) (W) ID (A) 0.085 @ VGS = 4.5 V 2.8 0.115 @ VGS = 2.5 V 2.4 TO-236 (SOT-23) G 1 3 S D 2 Top View Si2302DS (A2)* *Marking Code ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED) |
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Si2302DS O-236 OT-23) 08-Apr-05 | |
Contextual Info: Si2302ADS New Product Vishay Siliconix N-Channel 1.25-W, 2.5-V MOSFET PRODUCT SUMMARY VDS V 20 rDS(on) (W) ID (A) 0.085 @ VGS = 4.5 V 2.4 0.115 @ VGS = 2.5 V 2.0 TO-236 (SOT-23) G 1 S 2 3 D Top View Si2302DS (A2)* *Marking Code ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED) |
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Si2302ADS O-236 OT-23) Si2302DS S-20171--Rev. 18-Mar-02 | |
SI2302DSContextual Info: Tem ic SÌ2302DS S e m i c o n d u c t o r s N-Channel 1.25-W, 2.5-V Rated MOSFET Product Summary V d s V H)S(on) (Q ) Id (A) 0.085 @ VGS = 4.5 V 2.8 0.115 @ Vgs = 2.5 V 2.4 20 TO-236 (SOT-23) G S T Ï Ï /' Top View SÎ2302DS (A2)* ♦Marking Code Absolute Maximum Ratings (Ta = 25 °C Unless Otherwise Noted) |
OCR Scan |
2302DS O-236 OT-23) S-53600-- 22-May-97 SI2302DS | |
SOT-353 MARKING 8v
Abstract: diode SM 88A MOSFET SC-59 power gs 069 SC-75 sot marking a1 353 marking 118 sot-323 marking 25 SOD-323 6C t marking code sot 23
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L2N7002WT1G SC-70) C330mm 360mm SOT-353 MARKING 8v diode SM 88A MOSFET SC-59 power gs 069 SC-75 sot marking a1 353 marking 118 sot-323 marking 25 SOD-323 6C t marking code sot 23 | |
2N16
Abstract: BC237 BCY72
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MGSF1P02ELT1 L218A MSC1621T1 MSC2404 MSD1819A MV1620 MV1624 MV1636 MV1640 MV1642 2N16 BC237 BCY72 | |
Contextual Info: NTS4409N, NVS4409N Small Signal MOSFET 25 V, 0.75 A, Single, N−Channel, ESD Protection, SC−70/SOT−323 Features • • • • http://onsemi.com Advance Planar Technology for Fast Switching, Low RDS on Higher Efficiency Extending Battery Life AEC−Q101 Qualified and PPAP Capable − NVS4409N |
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NTS4409N, NVS4409N SC-70/SOT-323 AEC-Q101 25plicable NTS4409N/D | |
BC237Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MGSF1N02LT1 Motorola Preferred Device Low rDS on Small-Signal MOSFETs TMOS Single N-Channel Field Effect Transistors Part of the GreenLine Portfolio of devices with energy– conserving traits. N–CHANNEL ENHANCEMENT–MODE |
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MGSF1N02LT1 Sur218A MSC1621T1 MSC2404 MSD1819A MV1620 MV1624 MV1636 MV1640 MV1642 BC237 | |
2n2222 h 331 transistors
Abstract: 2n2222 -331 transistors 2n2222 331 transistors BC237 2n2222 h 331 MARKING CODE diode sod123 W1
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MGSF3442XT1 T218A MSC1621T1 MSC2404 MSD1819A MV1620 MV1624 MV1636 MV1640 MV1642 2n2222 h 331 transistors 2n2222 -331 transistors 2n2222 331 transistors BC237 2n2222 h 331 MARKING CODE diode sod123 W1 | |
BC237
Abstract: MARKING CODE diode sod123 W1 K 2056 transistor
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MGSF3455XT1 T218A MSC1621T1 MSC2404 MSD1819A MV1620 MV1624 MV1636 MV1640 MV1642 BC237 MARKING CODE diode sod123 W1 K 2056 transistor | |
BC237Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Low rDS on Small-Signal MOSFETs TMOS Single P-Channel Field Effect Transistors Part of the GreenLine Portfolio of devices with energy–conserving traits. These miniature surface mount MOSFETs utilize Motorola’s |
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MMBF0202PLT1 ENHANCE218A MSC1621T1 MSC2404 MSD1819A MV1620 MV1624 MV1636 MV1640 MV1642 BC237 | |
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BC237Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MGSF1N03LT1 Motorola Preferred Device Low rDS on Small-Signal MOSFETs TMOS Single N-Channel Field Effect Transistors Part of the GreenLine Portfolio of devices with energy– conserving traits. N–CHANNEL ENHANCEMENT–MODE |
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MGSF1N03LT1 Sur218A MSC1621T1 MSC2404 MSD1819A MV1620 MV1624 MV1636 MV1640 MV1642 BC237 | |
BC237
Abstract: marking CODE N3 SOT223 marking N3
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MGSF1N03LT1 Sur218A MSC1621T1 MSC2404 MSD1819A MV1620 MV1624 MV1636 MV1640 MV1642 BC237 marking CODE N3 SOT223 marking N3 | |
BC237
Abstract: 31 MOSFET sot-323
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MMBF0201NLT1 Mo218A MSC1621T1 MSC2404 MSD1819A MV1620 MV1624 MV1636 MV1640 MV1642 BC237 31 MOSFET sot-323 | |
BC237Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MGSF1P02LT1 Motorola Preferred Device Low rDS on Small-Signal MOSFETs TMOS Single P-Channel Field Effect Transistors Part of the GreenLine Portfolio of devices with energy– conserving traits. P–CHANNEL ENHANCEMENT–MODE |
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MGSF1P02LT1 ENHANCEME218A MSC1621T1 MSC2404 MSD1819A MV1620 MV1624 MV1636 MV1640 MV1642 BC237 | |
BC237
Abstract: BC857A MARKING CODE diode sod123 W1
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BSS138LT1 OT-23 MSC1621T1 MSC2404 MSD1819A MV1620 MV1624 MV1636 MV1640 MV1642 BC237 BC857A MARKING CODE diode sod123 W1 | |
K 2056 transistor
Abstract: BC237
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BSS84LT1 T218A MSC1621T1 MSC2404 MSD1819A MV1620 MV1624 MV1636 MV1640 MV1642 K 2056 transistor BC237 | |
BF256
Abstract: BC237
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BSS84LT1 T218A MSC1621T1 MSC2404 MSD1819A MV1620 MV1624 MV1636 MV1640 MV1642 BF256 BC237 | |
BC237
Abstract: MARKING CODE diode sod123 W1
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MGSF3441XT1 T218A MSC1621T1 MSC2404 MSD1819A MV1620 MV1624 MV1636 MV1640 MV1642 BC237 MARKING CODE diode sod123 W1 | |
BC237
Abstract: diode H5
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MGSF1P02LT1 ENHANCEME218A MSC1621T1 MSC2404 MSD1819A MV1620 MV1624 MV1636 MV1640 MV1642 BC237 diode H5 | |
BC237
Abstract: 2N5551 SOT23 2n2222 sot-23 418 motorola j112 fet free transistor BC547 temperature 2N3819 junction fet
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BSS138LT1 OT-23 MSC1621T1 MSC2404 MSD1819A MV1620 MV1624 MV1636 MV1640 MV1642 BC237 2N5551 SOT23 2n2222 sot-23 418 motorola j112 fet free transistor BC547 temperature 2N3819 junction fet |