A2 SOT-323 MOSFET Search Results

SOT-353 MARKING 8v

Abstract: diode SM 88A MOSFET SC-59 power gs 069 SC-75 sot marking a1 353 marking 118 sot-323 marking 25 SOD-323 6C t marking code sot 23
Contextual Info: LESHAN RADIO COMPANY, LTD. Small Signal MOSFET 115 mA, 60 V L2N7002WT1G N–Channel SOT–323 • 3 We declare that the material of product compliance with RoHS requirements. 1 2 MAXIMUM RATINGS Rating Symbol Value Unit Drain–Source Voltage VDSS 60 Vdc Drain–Gate Voltage RGS = 1.0 MΩ

A2 SOT-323 mosfet

Abstract: marking N1 sc70
Contextual Info: MMBF2201NT1, NVF2201N Power MOSFET 300 mAmps, 20 Volts N−Channel SC−70/SOT−323 These miniature surface mount MOSFETs low RDS on assure minimal power loss and conserve energy, making these devices ideal for use in small power management circuitry. Typical applications are

MMBF2201NT1G

Abstract: MMBF2201NT1 On semiconductor date Code sot-323 marking N1 sc70
Contextual Info: MMBF2201NT1 Preferred Device Power MOSFET 300 mAmps, 20 Volts N−Channel SC−70/SOT−323 These miniature surface mount MOSFETs low RDS on assure minimal power loss and conserve energy, making these devices ideal for use in small power management circuitry. Typical applications are

MMBF2202PT1G

Abstract: A1 SOT323 MOSFET P-CHANNEL MMBF2202PT1 MMBF2202PT1G SOT-323 A2 SOT-323 mosfet
Contextual Info: MMBF2202PT1 Preferred Device Power MOSFET 300 mAmps, 20 Volts P−Channel SC−70/SOT−323 These miniature surface mount MOSFETs low RDS on assure minimal power loss and conserve energy, making these devices ideal for use in small power management circuitry. Typical applications are

Contextual Info: MMBF2201NT1, NVF2201N Power MOSFET 300 mAmps, 20 Volts N−Channel SC−70/SOT−323 These miniature surface mount MOSFETs low RDS on assure minimal power loss and conserve energy, making these devices ideal for use in small power management circuitry. Typical applications are

Contextual Info: MMBF2201N, NVF2201N Power MOSFET 300 mAmps, 20 Volts N−Channel SC−70/SOT−323 These miniature surface mount MOSFETs low RDS on assure minimal power loss and conserve energy, making these devices ideal for use in small power management circuitry. Typical applications are

Contextual Info: LESHAN RADIO COMPANY, LTD. Power MOSFET 130 mAmps, 50 Volts P–Channel SOT–323 These miniature surface mount MOSFETs reduce power loss conserve energy, making this device ideal for use in small power management circuitry. Typical applications are dc–dc converters, load

Contextual Info: LESHAN RADIO COMPANY, LTD. Power MOSFET 130 mAmps, 50 Volts P–Channel SOT–323 These miniature surface mount MOSFETs reduce power loss conserve energy, making this device ideal for use in small power management circuitry. Typical applications are dc–dc converters, load

LBSS84WT1G

Abstract: marking td sot323
Contextual Info: LESHAN RADIO COMPANY, LTD. Power MOSFET 130 mAmps, 50 Volts P–Channel SOT–323 These miniature surface mount MOSFETs reduce power loss conserve energy, making this device ideal for use in small power management circuitry. Typical applications are dc–dc converters, load

Contextual Info: LESHAN RADIO COMPANY, LTD. Power MOSFET 130 mAmps, 50 Volts P–Channel SOT–323 These miniature surface mount MOSFETs reduce power loss conserve energy, making this device ideal for use in small power management circuitry. Typical applications are dc–dc converters, load

Contextual Info: NTS4409N, NVS4409N Small Signal MOSFET 25 V, 0.75 A, Single, N−Channel, ESD Protection, SC−70/SOT−323 Features • • • • http://onsemi.com Advance Planar Technology for Fast Switching, Low RDS on Higher Efficiency Extending Battery Life AEC−Q101 Qualified and PPAP Capable − NVS4409N

LBSS84WT1G

Abstract: A2 SOT-323 mosfet
Contextual Info: LESHAN RADIO COMPANY, LTD. Power MOSFET 130 mAmps, 50 Volts P–Channel SOT–323 These miniature surface mount MOSFETs reduce power loss conserve energy, making this device ideal for use in small power management circuitry. Typical applications are dc–dc converters, load

transistor 6c x

Abstract: marking code 6c marking 6C
Contextual Info: LESHAN RADIO COMPANY, LTD. Small Signal MOSFET 115 mA, 60 V L2N7002WT1G N–Channel SOT–323 • 3 We declare that the material of product compliance with RoHS requirements. 1 • ESD Protected:1000V 2 MAXIMUM RATINGS Rating Symbol Value Unit Drain–Source Voltage

Contextual Info: LESHAN RADIO COMPANY, LTD. Small Signal MOSFET 115 mA, 60 V L2N7002WT1G N–Channel SOT–323 • 3 We declare that the material of product compliance with RoHS requirements. 1 2 MAXIMUM RATINGS Rating Symbol Value Unit Drain–Source Voltage VDSS 60 Vdc Drain–Gate Voltage RGS = 1.0 MΩ

Contextual Info: LESHAN RADIO COMPANY, LTD. Small Signal MOSFET 115 mA, 60 V L2N7002WT1G S-L2N7002WT1G N–Channel SOT–323 • 3 We declare that the material of product compliance with RoHS requirements. • ESD Protected:1000V • S- Prefix for Automotive and Other Applications Requiring

NTS4409N

Abstract: NTS4409NT1G
Contextual Info: NTS4409N Small Signal MOSFET 25 V, 0.75 A, Single, N−Channel, ESD Protection, SC−70/SOT−323 Features • Advance Planar Technology for Fast Switching, Low RDS on • Higher Efficiency Extending Battery Life • This is a Pb−Free Device http://onsemi.com

Contextual Info: NTS2101P Power MOSFET −8.0 V, −1.4 A, Single P−Channel, SC−70 Features • • • • Leading Trench Technology for Low RDS on Extending Battery Life −1.8 V Rated for Low Voltage Gate Drive SC−70 Surface Mount for Small Footprint (2 x 2 mm) Pb−Free Package is Available

NTS2101P

Abstract: NTS2101PT1 NTS2101PT1G A1 SOT323 MOSFET P-CHANNEL
Contextual Info: NTS2101P Power MOSFET −8.0 V, −1.4 A, Single P−Channel, SC−70 Features • • • • Leading Trench Technology for Low RDS on Extending Battery Life −1.8 V Rated for Low Voltage Gate Drive SC−70 Surface Mount for Small Footprint (2 x 2 mm) Pb−Free Package is Available

Contextual Info: NTS4101P Power MOSFET −20 V, −1.37 A, Single P−Channel, SC−70 Features • • • • Leading −20 V Trench for Low RDS on −2.5 V Rated for Low Voltage Gate Drive SC−70 Surface Mount for Small Footprint (2x2 mm) Pb−Free Package is Available

NTS4101P

Abstract: NTS4101PT1 NTS4101PT1G
Contextual Info: NTS4101P Power MOSFET −20 V, −1.37 A, Single P−Channel, SC−70 Features • • • • Leading −20 V Trench for Low RDS on −2.5 V Rated for Low Voltage Gate Drive SC−70 Surface Mount for Small Footprint (2x2 mm) Pb−Free Package is Available

P-Channel 1.8-V (G-S) MOSFET sot-323

Abstract: NTS4101P NTS4101PT1 NTS4101PT1G A1 SOT323 MOSFET P-CHANNEL
Contextual Info: NTS4101P Power MOSFET −20 V, −1.37 A, Single P−Channel, SC−70 Features • • • • Leading −20 V Trench for Low RDS on −2.5 V Rated for Low Voltage Gate Drive SC−70 Surface Mount for Small Footprint (2x2 mm) Pb−Free Package is Available

NTS4409N

Abstract: NTS4409NT1G
Contextual Info: NTS4409N Small Signal MOSFET 25 V, 0.75 A, Single, N−Channel, ESD Protection, SC−70/SOT−323 Features • Advance Planar Technology for Fast Switching, Low RDS on • Higher Efficiency Extending Battery Life • This is a Pb−Free Device http://onsemi.com

nts4001

Contextual Info: NTS4001N, NVS4001N Small Signal MOSFET 30 V, 270 mA, Single N−Channel, SC−70 Features • • • • • Low Gate Charge for Fast Switching Small Footprint − 30% Smaller than TSOP−6 ESD Protected Gate AEC−Q101 Qualified and PPAP Capable − NVS4001N

NTS4001N

Abstract: NTS4001NT1 NTS4001NT1G
Contextual Info: NTS4001N Small Signal MOSFET 30 V, 270 mA, Single N−Channel, SC−70 Features • • • • Low Gate Charge for Fast Switching Small Footprint − 30% Smaller than TSOP−6 ESD Protected Gate Pb−Free Package is Available http://onsemi.com V BR DSS RDS(on) TYP