A235BQ5 Search Results

transistor BD 800

Abstract: transistor BD 110
Contextual Info: ESC D • A235bQ5 DDQMB? 4 M SIEG NPN Silicon Planar Transistor SIEMENS A K T I E N6 ES EL LSC HA F BD 524 0^ 377 T - 3 3 - a ST D - BD 524 is an epitaxial NPN silicon planar transistor in TO 126 plastic package 12 A 3 DIN 41869, sheet 4 . It is particularly intended for use as driver transistor in horizontal

Contextual Info: SIEM ENS High-Performance 8-Bit CMOS Single-Chip Microcontroller SAB 80C517/80C537 Advanced Information SAB 80C517 SAB 80C537 Microcontroller with factory mask-programmable ROM Microcontroller for external ROM • Versions for 12 MHz and 16 MHz operating frequency

U1615

Contextual Info: SIEMENS TDA 6612-5 TV-Stereo-Sound Bipolar IC Preliminary Data Features The TDA 6612-5 represents a complete TV-stereo system controlled by the I2C Bus according to German TV-Stereo standard. • All functions inclusive matrix adjustment are I2C Bus controlled

Contextual Info: SIEMENS Mini Smart Preliminary data • • • • • • • • • BSP 350 High-side Switch Short-circuit protection Overtemperature protection Overload protection Reverse battery protection Switching inductive load Clamp of negative output voltage with inductive loads

MARKING CODE SMD JW

Abstract: TXC CXO A51AC isdn modem 2S34 chmn m1p7 SAB-R3000
Contextual Info: SIEMENS AKTIEN6ESELLSCHAF 47E D • ô53St.0S QQBbbSa Ô m S l E ú SAB 82532 1 INTRODUCTION The Enhanced Serial Communication Controller ESCC2 SAB 82532 is a data communication device with two symmetrical serial channels. It has been designed to implement high-speed com­

sda0808

Contextual Info: tüE 1 • «235tOS 0050247 857 « S I E G SIEMENS SIEMENS AKTIENfiESELLSCHAF Microprocessor-Compatible 8-Bit A/D Converters with 8-Channel Multiplexer Prelim inary Data SDA 0808 SDA 1808 ACM OS 1C Features • • • • • • • • • • • • •

Contextual Info: SIEMENS BUZ 382 SIPMOS Power Transistor • N channel • Enhancement mode V'IOys6 • FREDFET 3 Pin 1 Pin 2 Type BUZ 382 Vbs 400 V b 12.5 A flbSfon 0.4 w Pin 3 D G S Package Ordering Code TO-218AA C67078-A3207-A2 Maximum Ratings Parameter Symbol Drain source voltage

T39 diode

Contextual Info: flSBSbOS ODSDÔTÔ 2 HI SIE6 SIEMENS AK TIE NGESELLSC HAF S IE iV 1 E i\S S 4?E D "T -3 9 -3 Î SIMOPAC MOSFET Modules A = 500 V à 48 A ^ D S o n ) a 0.12 Q VM • • • • • • BSM 151 (C) BSM 151 R Power module Single switch N channel Enhancement mode

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KJE transistor

Abstract: KJE 17 transistor NT 101 transistor AC151 AC151 transistor kje KJE ZO transistor ac 151 k 151 transistor Q60103-X151-F1
Contextual Info: 2SC D • fi235bQS 0004035 ISIE6 AC 151 AC 151 r PNP Germanium Transistors SIEMENS AKTIENGESELLSCHAF C 04035 T- 0 9 - U Not for new design for AF input and driver stages of medium performance AC 151 and AC 151 r are alloyed germanium PNP transistors in 1A 3 DIN 41871 case

5N521

Abstract: BFQ71 VCE05181 bfq 85 Q62702-F775 siemens Pm 90 87 transistor zo 103 MA 7S 714
Contextual Info: SIEMENS BFQ71 NPN Silicon RF Transistor • For broadband amplifiers up to 2 GHz and fast non-saturated switches at collector currents from 1 mA to 20 mA. • Hermetically sealed ceramic package. • HiRel/Mil screening available. B CECC-type available: CECC 50002/260.

BTS 302

Abstract: siemens LAL 2.25 BTS410G BTS302 ZENER A24 e3040 410H DIODE smd Wj 20/BTS 302
Contextual Info: SIEMENS BTS 41 OG PROFET • High-side switch • Short-circuit protection • Overtemperature protection • Overload protection • Load dump protection1 • Undervoltage and overvoltage shutdown with auto-restart and hysteresis • Reverse battery protection ’ /

siemens Package Outlines P-LCC

Contextual Info: SIEMENS PEB 2055 PEF 2055 Electrical Characteristics 6 Electrical Characteristics Absolute Maximum Ratings Parameter Symbol min. max. ta 70 85 ^stg -6 5 125 6C Vs vr max -0 .4 Vdd + 0-4 V 6 V T’a Storage temperature Maximum voltage on any pin Unit -4 0 Ambient temperature under bias: PEB

Contextual Info: SIEM ENS äE35b05 □ □TbL.fig L>E1 5-V Low-Drop Fixed Voltage Regulator TLE 4278 G Preliminary Data Features • • • • • • • • • • • • Output voltage tolerance < ± 2 % Very low current consumption Separated reset and watchdog output

Contextual Info: SIEMENS Dynamic Differential Hall Effect Sensor 1C TLE 4923 Preliminary Bipolar 1C Features • • • • • • • • • • • • • Advanced performance Higher sensitivity Symmetrical thresholds High piezo resistivity Reduced power consumption

siemens igbt BSM 200 GA 120

Abstract: siemens igbt BSM 300 igbt module bsm 300 igbt BSM 300 GA 120 siemens igbt BSM 10 siemens igbt BSM 300 ga 120 siemens igbt BSM 200 GA 100 SIS00025 C67070-A2017-A70 siemens igbt chip
Contextual Info: SIEMENS BSM 300 GA 120 DN2 IGBT Power Module • Single switch • Including fast free-wheeling diodes • Package with insulated metal base plate Package Ordering Code BSM 300 G A 120 DN2 1200V 430A SINGLE SWITCH 1 C67076-A2007-A70 BSM 300 GA 120 DN2 S 1200V 430A

siemens sda 30c164

Abstract: pwm fa 552 0071547 SBUR MB SDA30C164 TRANSISTOR BC 187 30C164 soh dl6 P07C SAB-C501
Contextual Info: SIEM EN S ICs for Consumer Electronics 8-Bit Microcontroller, ROMLESS SDA 30C164 * Preliminary Data Sheet 11.94 fl23Sb05 T4Ö \ SDA30C164 Revision History: Original Version: 11.94 Previous Releases: Page Subjects changes since last revision Data Classification

Contextual Info: SIEMENS PEB 20550 PEF 20550 Overview 1 Overview The PEB 20550 Extended Line Card Controller is a highly integrated controller circuit optimized for line card and key system applications. It combines all functional blocks necessary to manage up to 32 digital (ISDN or proprietary) or 64 analog subscribers.

Contextual Info: •I Ô235L.05 OQÔIBbS 345 ■ SIEMENS S m art Q uad C hann el Low -S ide Sw itch T L E 5216 G Prelim inary Data Features • Overload protection • Short circuit protection • Cascadeable serial diagnostic interface • Overvoltage protection • nC compatible input

Q67000-S271

Abstract: transistor bb BSP452 E6327
Contextual Info: SIEM EN S BSP 452 MiniSmart Preliminary Data • • • • • • • • • • • High-side switch Short-circuit protection Input protection Overtemperature protection with hysteresis Overload protection Overvoltage protection Overvoltage shutdown Switching inductive load

Contextual Info: Metallized Polypropylene Film Capacitors MKP Coated (Powder Dipped) B 32 612 . B 32 614 Wound MKP capacitors Construction • Dielectric: polypropylene • Wound capacitor technology • Epoxy resin coating (UL 94 V-0) Features • High pulse strength

Contextual Info: SIEMENS 3.3V 8M x 64-Bit EDO-ORAM Module 3.3V 8M x 72-Bit EDO-DRAM Module HYM64V8005GU-50/-60/-70 HYM64V8045GU-50/-60/-70 HYM72V8005GU-50/-60/-70 HYM72V8045GU-50/-60/-70 168pin unbuffered DIMM Module with serial presence detect Preliminary Information •

Contextual Info: S IE M E N S Device Specifications C515 10 Device Specifications 10.1 Absolute Maximum Ratings Ambient temperature under bias TA . 0 ‘C to + 110 'C Storage temperature (TSJ). - 65 "C to + 150 “C

kpy 12

Abstract: KPY 16
Contextual Info: Silicon Piezoresistive Relative Pressure Sensor KPY 41-R KPY 46-R Features • • • • Low pressure and temperature hysteresis Fast response High sensitivity and linearity Fatigue free monocrystaline silicon diaphragm giving high load cycle stability • High long term stability