Semikron 50 04 a3
Abstract: Semikron skd 50/04 Semikron SKB 50/02 a3 semikron skd 50/08 SKB 7 04 SKB 7 08 SKB 7 / 12 SKB 7 02 semikron skd 50/02 Semikron SKB 7 /04
Text: VRSM VRRM 50 A 64 °C 50 A (92 °C) Rmin Ω Types Rmin Ω SKB 50/02 A3 SKB 50/04 A3 SKB 50/08 A3 SKB 50/12 A3 SKB 50/14 A3 SKB 50/16 A3 0,1 0,3 0,4 0,6 0,7 0,8 SKD 50/02 A3 SKD 50/04 A3 SKD 50/08 A3 SKD 50/12 A3 SKD 50/14 A3 SKD 50/16 A3 0,1 0,2 0,4 0,6
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P1A/120
P1A/120
Semikron 50 04 a3
Semikron skd 50/04
Semikron SKB 50/02 a3
semikron skd 50/08
SKB 7 04
SKB 7 08
SKB 7 / 12
SKB 7 02
semikron skd 50/02
Semikron SKB 7 /04
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semikron skkt 26/12
Abstract: skke 15/14 semikron skkt 31 semikron skkd 15/12 semipack skMt semipack skkt 31 SKKT 26-12 semipack 1 semipack skkt semipack skkt 15/16
Text: VRRM VRSM IFRMS maximum value for continuous operation 24 A2); 28 A3) 24 A2); 28 A3) 60 A SEMIPACK 0 SKKD 15 SKKE 15 SEMIPACK® 1 SKKD 26 IFAV (sin. 180; Tcase = 71 °C) V V 17,5 A3) 17,5 A3) 38 A 500 700 400 600 – SKKD 15/06 SKKE 15/04 SKKE 15/06 –
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O-240
semikron skkt 26/12
skke 15/14
semikron skkt 31
semikron skkd 15/12
semipack skMt
semipack skkt 31
SKKT 26-12
semipack 1
semipack skkt
semipack skkt 15/16
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Untitled
Abstract: No abstract text available
Text: www.fairchildsemi.com K A3 8 4 2 B/K A3 8 4 3 B/K A3 8 4 4 B/ K A3 8 4 5 B SM PS Cont rolle r Features Description • • • • The KA3842B/KA3843B/KA3844B/KA3845B are fixed frequency current-mode PWM controller. They are specially designed for Off - Line and DC-to-DC converter
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KA3842B/KA3843B/KA3844B/KA3845B
KA3842B
KA3844B
KA3843B
KA3845B
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SEMIPACK0
Abstract: Semikron 50 04 a3 C3185 9B19 b17 diode skke15 Semikron 60 08 a3 semipack 1
Text: VRSM VRRM V V 500 700 900 1300 1500 1700 400 600 800 1200 1400 1600 IFRMS maximum values for continuous operation 24 A2); 28 A3) 24 A2); 28 A3) 60 A IFAV (sin. 180; Tcase = 71 °C) 17,5 A3) 17,5 A3) 38 A – SKKD 15/06 SKKD 15/08 SKKD 15/12 SKKD 15/14 SKKD 15/16
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3A/125
SEMIPACK0
Semikron 50 04 a3
C3185
9B19
b17 diode
skke15
Semikron 60 08 a3
semipack 1
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Untitled
Abstract: No abstract text available
Text: Laser Diodes Ant Series- 9x× nm High Brightness Laser Diode BLD-91-tt-30W-A3-F-10-c-l-22 BLD-94-tt-30W-A3-F-10-c-l-22 BLD-98-tt-30W-A3-F-10-c-l-22 High Power Laser Diode Modules are manufactured by adopting specialized fibercoupling techniques, resulting in volume products with a high efficiency, stability and
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BLD-91-tt-30W-A3-F-10-c-l-22
BLD-94-tt-30W-A3-F-10-c-l-22
BLD-98-tt-30W-A3-F-10-c-l-22
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Untitled
Abstract: No abstract text available
Text: MII 145-12 A3 MID 145-12 A3 MDI 145-12 A3 IC25 = 160 A VCES = 1200 V VCE sat typ. = 2.2 V IGBT Modules Short Circuit SOA Capability Square RBSOA MII MDI MID 1 1 7 6 3 4 5 2 3 4 5 Symbol Conditions VCES VCGR TJ = 25°C to 150°C TJ = 25°C to 150°C; RGE = 20 kW
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10012
Abstract: No abstract text available
Text: MII 100-12 A3 MID 100-12 A3 MDI 100-12 A3 IC25 = 135 A VCES = 1200 V VCE sat typ. = 2.2 V IGBT Modules Short Circuit SOA Capability Square RBSOA MII MID 7 6 3 4 5 2 MDI 1 1 3 4 5 Symbol Conditions VCES VCGR TJ = 25°C to 150°C TJ = 25°C to 150°C; RGE = 20 kW
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E72873
Abstract: 0443k ic equivalent MID 400
Text: MII 145-12 A3 MID 145-12 A3 MDI 145-12 A3 IC25 = 160 A = 1200 V VCES VCE sat typ. = 2.2 V IGBT Modules Short Circuit SOA Capability Square RBSOA MII MID 7 6 3 4 5 2 MDI 1 1 3 4 5 Symbol Conditions VCES VCGR TJ = 25°C to 150°C TJ = 25°C to 150°C; RGE = 20 kW
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Untitled
Abstract: No abstract text available
Text: MII 145-12 A3 MID 145-12 A3 MDI 145-12 A3 IC25 = 160 A = 1200 V VCES VCE sat typ. = 2.2 V IGBT Modules Short Circuit SOA Capability Square RBSOA MII MID 1 7 6 3 4 5 2 MDI 1 3 4 5 1 7 6 3 2 1 4 5 6 7 3 2 2 E 72873 Preliminary data Symbol Conditions Maximum Ratings
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D-68623
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0443k
Abstract: E72873 ic equivalent MID 400 MDI11
Text: MII 100-12 A3 MID 100-12 A3 MDI 100-12 A3 IC25 = 135 A VCES = 1200 V VCE sat typ. = 2.2 V IGBT Modules Short Circuit SOA Capability Square RBSOA MII MID 7 6 3 4 5 2 MDI 1 1 3 4 5 Symbol Conditions VCES VCGR TJ = 25°C to 150°C TJ = 25°C to 150°C; RGE = 20 kW
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Untitled
Abstract: No abstract text available
Text: MII 75-12 A3 MID 75-12 A3 MDI 75-12 A3 IC25 = 90 A VCES = 1200 V VCE sat typ. = 2.2 V IGBT Modules Short Circuit SOA Capability Square RBSOA MII MID 7 6 3 4 5 2 MDI 1 1 3 4 5 Symbol Conditions VCES VCGR TJ = 25°C to 150°C TJ = 25°C to 150°C; RGE = 20 kW
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MII 75-12 A3
Abstract: ixys 75-12 A3 DIODE E72873 TR 7512
Text: MII 75-12 A3 MID 75-12 A3 MDI 75-12 A3 IC25 = 90 A VCES = 1200 V VCE sat typ. = 2.2 V IGBT Modules Short Circuit SOA Capability Square RBSOA MII MID 7 6 3 4 5 2 MDI 1 1 3 4 5 Symbol Conditions VCES VCGR TJ = 25°C to 150°C TJ = 25°C to 150°C; RGE = 20 kW
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C2C36
Abstract: VPW09197 BAS21U SC74
Text: BAS21U Silicon Switching Diode Array 5 4 6 For high-speed switching applications Internal galvanic isolated diodes 3 2 in one package 1 VPW09197 C1 C2 C3 6 5 4 1 2 3 A1 A2 A3 EHA07291 Type BAS21U Marking Pin Configuration Package JSs 1=A1 2=A2 3=A3 4=C3 5=C2 6=C1 SC74
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BAS21U
VPW09197
EHA07291
EHB00028
Aug-07-2001
C2C36
VPW09197
BAS21U
SC74
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marking 6c1
Abstract: BAS16U SC74
Text: BAS16U Silicon Switching Diode Array 5 For high-speed switching applications 4 6 Internal galvanic isolated diodes in one package 3 C1 C2 C3 6 5 4 2 1 VPW09197 1 2 3 A1 A2 A3 EHA07291 Type Marking BAS16U A6s Pin Configuration Package 1=A1 2=A2 3=A3 4=C3 5=C2 6=C1 SC74
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BAS16U
VPW09197
EHA07291
Jul-06-2001
EHB00025
EHB00022
marking 6c1
BAS16U
SC74
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Untitled
Abstract: No abstract text available
Text: OP A3 48 OP A2 3 48 OP A3 OPA348 OPA2348 OPA4348 ¨ 48 OP A4 34 8 www.ti.com SBOS213G – NOVEMBER 2001 – REVISED MARCH 2013 1MHz, 45µA, CMOS, Rail-to-Rail OPERATIONAL AMPLIFIERS Value Line Series Check for Samples: OPA348, OPA2348, OPA4348 FEATURES DESCRIPTION
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OPA348
OPA2348
OPA4348
SBOS213G
OPA348,
OPA2348,
SC70-5,
OT23-8
TSSOP-14
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3 bit magnitude comparator
Abstract: 74f85 diode 439 b14
Text: MC54/74F85 4-BIT MAGNITUDE COMPARATOR The MC54/74F85 is a 4-Bit Magnitude Comparator which compares two 4-Bit words A0-A3, B0-B3 , A3, B3 being the most significant inputs. Operation is not restricted to binary codes; the device will work with any monotonic code.
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MC54/74F85
MC54/74F85
3 bit magnitude comparator
74f85
diode 439 b14
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4348A
Abstract: 2348A
Text: OP A3 48 OP A2 3 48 OP A3 OPA348 OPA2348 OPA4348 ¨ 48 OP A4 34 8 www.ti.com SBOS213F – NOVEMBER 2001 – REVISED OCTOBER 2012 1MHz, 45µA, CMOS, Rail-to-Rail OPERATIONAL AMPLIFIERS Value Line Series Check for Samples: OPA348, OPA2348, OPA4348 FEATURES DESCRIPTION
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OPA348
OPA2348
OPA4348
SBOS213F
OPA348,
OPA2348,
SC70-5,
OT23-8
TSSOP-14
4348A
2348A
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Semikron 50 04 a3
Abstract: semikron bridge rectifier sk 8 25 08 motor SKD skd50 skb 32 LD1020 w17510 SKB 14 08
Text: SEMIKRON V rsm I d Teas e = • • . 50 A (64 °C) V rrm V 200 400 800 1200 1600 50 A (92 °C) a Types Rmin SKB SKB SKB SKB SKB 0,1 0,3 0,4 0,6 0,8 SKD SKD SKD SK D SK D 0,1 0,2 0,4 0,6 0,8 50/02 A3 50/04 A3 50/08 A3 50/12 A3 50/16 A3 Symbol Conditions
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P1/120
P1/120F
I/120
/120F
SKB50
SKD50
Semikron 50 04 a3
semikron bridge rectifier sk 8 25 08
motor SKD
skd50
skb 32
LD1020
w17510
SKB 14 08
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diode 14512 H
Abstract: No abstract text available
Text: Li IXYS Mil 145-12 A3 MID 145-12 A3 MDI 145-12 A3 IGBT Modules lC25 = 160 A Short Circuit SOA Capability ^ ces ” ^ Square RBSOA ^CE sat typ. = ^ Mil MID I Ir 7C ^J 6 0 -+ ^ MDI I 11 l. o1 M : : ^ l iïjÔ jj E 72873 Preliminary data Symbol Conditions Maximum Ratings
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D-68623
diode 14512 H
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Untitled
Abstract: No abstract text available
Text: Li IXYS Mil 75-12 A3 MID 75-12 A3 MDI 75-12 A3 IGBT Modules lC25 = 90 A Short Circuit SOA Capability ^ ces ” ^ Square RBSOA ^ C E s a t typ. = Mil MID I Ir 7C ^J 6 0 -+ ^ MDI I 11 l. o1 M : : ^ ^ l iïjÔ jj E 72873 Preliminary data Symbol Conditions
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D-68623
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IXYS DS 145
Abstract: diode 14512 H
Text: ÖIXYS Mil 145*12 A3 MIO 145*12 A3 U m 145-12 A3 IGBT M odules lC25 = 160 A Short Circuit SOA Capability Square RBSOA ^ ces ” ^ ^ C E s a t t yP. = M il MID I ^ ^-2 V MDI E' : : 60—I- isÖL • i : E 72873 P relim in ary data S ym bo l C o n d itio n s
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60--I-
D-68623
IXYS DS 145
diode 14512 H
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Untitled
Abstract: No abstract text available
Text: OIXYS MH 75-12 A3 IGBT Modules ^C25 V CES V CE sat typ. Short Circuit SOA Capability Square RBSOA MID MID 75-12 A3 MDI 75*12 A3 90 A 1200 V 2.2 V MDI E 72873 Preliminary data Symbol Conditions Maximum Ratings V qeS VCGR Tj = 25°C to 150°C 1200 V Tj = 25°C to 150°C; RGE = 20 k il
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D-68623
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Untitled
Abstract: No abstract text available
Text: se MIKROn zurück V rsm V rrm Ifrms maximum value for continuous operation 24 A2*; 28 A3> 24 A2*; 28 A3> Ifav sin. 180; Tcase = 7 17,5 A3> 60 A SEMIPACK 0 SKKD 15 SKKE 15 38 A SEMIPACK® 1 SKKD 26 °C) V V 500 400 S K K E 15/04 - 700 600 S K K D 15/06
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11mill
KT01510
44J------------------
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TS 100-12
Abstract: No abstract text available
Text: ÖIXYS MH 100*12 A3 MIO 100*12 A3 Um 100-12 A3 IGBT M odules lC25 = 135 A Short Circuit SOA Capability ^ ces ” ^ Square RBSOA ^ C E s a t t yP. = M il MID I ^ ^-2 V MDI E' : : 60—I- • i : E 72873 P relim in ary data S ym bo l C o n d itio n s M ax im u m R atin g s
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60--I-
D-68623
TS 100-12
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