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    A3L DIODE Search Results

    A3L DIODE Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    CUZ24V Toshiba Electronic Devices & Storage Corporation Zener Diode, 24 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    XCUZ13V Toshiba Electronic Devices & Storage Corporation Zener Diode, 13.0 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    XCUZ36V Toshiba Electronic Devices & Storage Corporation Zener Diode, 36.0 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    CUZ12V Toshiba Electronic Devices & Storage Corporation Zener Diode, 12 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    MUZ5V6 Toshiba Electronic Devices & Storage Corporation Zener Diode, 5.6 V, USM Visit Toshiba Electronic Devices & Storage Corporation

    A3L DIODE Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    htc hd2 schematic

    Abstract: max1987 rG82855GM FW82801DBM RG82855 asus crb input voltage point lcd inverter board schematic TL494 ASUS sir s4 105a *6jk3
    Text: 5 4 3 2 1 FILE LIST THERMAL A3/A6 BLOCK DIAGRAM D 05 POWER IMVP4 BANIAS 24.5W FAN 35 03 37 38 39 40 41 42 43 44 45 04 PSB C North Bridge DDR A3N 855GM 266 A3L 852GM 266 CPU Celeron/ Banias/ Dothan(400) Celeron/ Banias/ Dothan(400) Celeron/ Banias/ Dothan(400)


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    PDF 855GM 852GM 855GM/GME 852GM/GMV/GME 855GME 852GME 852GMV ATA100 htc hd2 schematic max1987 rG82855GM FW82801DBM RG82855 asus crb input voltage point lcd inverter board schematic TL494 ASUS sir s4 105a *6jk3

    htc hd2 schematic

    Abstract: a6N37 asus crb input voltage point max1987 ASUS lcd inverter board schematic TL494 diode BUG C332 RG82855 rG82855GM KBC-M38857
    Text: 5 4 3 2 1 FILE LIST THERMAL A6Ne BLOCK DIAGRAM D 05 POWER IMVP4 BANIAS 24.5W FAN 35 03 37 38 39 40 41 42 43 44 45 04 PSB C North Bridge DDR A3N 855GM 266 A3L 852GM 266 CPU Celeron/ Banias/ Dothan(400) Celeron/ Banias/ Dothan(400) Celeron/ Banias/ Dothan(400)


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    PDF 855GM 852GM 855GM/GME 852GM/GMV/GME 855GME 852GME 852GMV ATA100 TPA0102 BC847BPN. htc hd2 schematic a6N37 asus crb input voltage point max1987 ASUS lcd inverter board schematic TL494 diode BUG C332 RG82855 rG82855GM KBC-M38857

    htc hd2 schematic

    Abstract: KBC-M38857 r2561 h946 D2041 C3931 L5631 ASUS RN10B smd diode a3l
    Text: 5 4 3 2 1 FILE LIST THERMAL A3 BLOCK DIAGRAM D 05 POWER IMVP4 BANIAS 24.5W FAN 35 03 37 38 39 40 41 42 43 44 45 04 PSB C North Bridge DDR A3N 855GM 266 A3L 852GM 266 CPU Celeron/ Banias/ Dothan(400) Celeron/ Banias/ Dothan(400) Celeron/ Banias/ Dothan(400)


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    PDF 855GM 852GM 855GM/GME 852GM/GMV/GME 855GME 852GME 852GMV ATA100 V5USB01 V5USB24 htc hd2 schematic KBC-M38857 r2561 h946 D2041 C3931 L5631 ASUS RN10B smd diode a3l

    MARK B3L

    Abstract: diode b2l A1L DIODE zener a1 7 HZU11A1L HZU11A2L HZU11A3L HZU11B1L HZU11B2L HZU11B3L
    Text: HZU-L Series Silicon Planar Zener Diode for Low Noise Application REJ03G0043-0400 Rev.4.00 Oct.29.2007 Features • • • • Diode noise level of this series is approximately 1/3-1/10 lower than the HZ series. Low leakage and low zener impedance. Wide spectrum from 5.2 V through 14.3 V of zener voltage provide flexible application.


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    PDF REJ03G0043-0400 REJ03G0043-0400 PTSP0002ZA-A MARK B3L diode b2l A1L DIODE zener a1 7 HZU11A1L HZU11A2L HZU11A3L HZU11B1L HZU11B2L HZU11B3L

    acs712elctr05bt

    Abstract: No abstract text available
    Text: VISHAY BCCOMPONENTS www.vishay.com Aluminum Capacitors Technical Note Power Management Solution Integrated Supercapacitor Charger By Gerald Tatschl MAL219699001E3 ENYCAPTM Capacitance Range: 1 F to 100 F Voltage Range: 2.3 V to 3.2 V 4 W Backup Power When Input Fails


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    PDF MAL219699001E3 MAL219699001E3 LTC33555. 03-Dec-14 acs712elctr05bt

    Untitled

    Abstract: No abstract text available
    Text: HZU-L Series Silicon Planar Zener Diode for Low Noise Application REJ03G0043-0400 Rev.4.00 Oct.29.2007 Features • • • • Diode noise level of this series is approximately 1/3-1/10 lower than the HZ series. Low leakage and low zener impedance. Wide spectrum from 5.2 V through 14.3 V of zener voltage provide flexible application.


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    PDF REJ03G0043-0400 PTSP0002ZA-A

    HZU11A1L

    Abstract: HZU11A2L HZU11A3L HZU11B1L HZU11B2L HZU11B3L HZU11C1L HZU11C2L PTSP0002ZA-A
    Text: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid


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    Untitled

    Abstract: No abstract text available
    Text: IMAGE SENSORS FTF2416C 4M Full-Frame CCD Image Sensor Preliminary specification DALSA Professional Imaging 2003 February 6 DALSA Professional Imaging Preliminary specification 4M Full-Frame CCD Image Sensor • APS compatible optical image format • 4M active pixels 2460H x 1640V


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    PDF FTF2416C FTF2416C 2460H

    Untitled

    Abstract: No abstract text available
    Text: IMAGE SENSORS DATA SHEET FTF2416M 4M Full Frame CCD Image Sensor Preliminary specification DALSA Professional Imaging 2006 October 30 DALSA Professional Imaging Preliminary Product Specification 4M Full-Frame CCD Image Sensor FTF2416M • APS compatible optical image format


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    PDF FTF2416M FTF2416M 2460H

    ftf2416m

    Abstract: ccd image sensor black 6 pin chip Dalsa Melles Griot BAS28 BAT74 BG40
    Text: IMAGE SENSORS DATA SHEET FTF2416M 4M Full Frame CCD Image Sensor Preliminary specification DALSA Professional Imaging 2006 October 30 DALSA Professional Imaging Preliminary Product Specification 4M Full-Frame CCD Image Sensor FTF2416M • APS compatible optical image format


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    PDF FTF2416M 2460H ftf2416m ccd image sensor black 6 pin chip Dalsa Melles Griot BAS28 BAT74 BG40

    mg15n2

    Abstract: No abstract text available
    Text: GTR MODULE SILICON N CHANNEL IGBT MG15N2YS1 HIGH POWER SWITCHING APPLICATIONS. MOTOR CONTROL APPLICATIONS. . High Input Impedance . High Speed : tf=1.0ns Max. trr=0. 5(is (Max.) . Low Saturation Voltage: V q t (sat)~5.OV(Max.) . Enhancement-Mode . Includes a Complete Half Bridge in one


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    PDF MG15N2YS1 mg15n2

    SP4850

    Abstract: HDSP-4830
    Text: H E W LE T TPACKARD m 10-Element Bar Graph Array Technical Data HLCP-J100 HDSP-4820 HDSP-4830 HDSP-4832 Features Description • Custom Multicolor Array Capability • Matched LEDs for Uniform Appearance • End Stackable • Package Interlock Ensures Correct Alignment


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    PDF 10-Element HLCP-J100 HDSP-4820 HDSP-4830 HDSP-4832 HDSP-4832/4836/4840/4850 HDSP4830 SP4850

    Untitled

    Abstract: No abstract text available
    Text: DALLAS SEMICONDUCTOR DS1284 Watchdog Timekeeper Chip PIN ASSIGNMENT FEATURES • Keeps track of hundredths of seconds, seconds, min­ utes, hours, days, date of the month, months, and years P z • Watchdog timer restarts an out-of-control processor |< n ic q


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    PDF 28-pin DS1284 28-PtN DS1284 28-PIN

    k 246 transistor fet

    Abstract: 100-P BUK571 BUK571-60A BUK571-60B K571 1e43
    Text: PHILIPS INTERNATIONAL 5fc,E D Philips Components • 711Dfi2b 324 ■ PHIN Data sheet B status Preliminary specification date of issue March 1991 Replaces BUK541-60A/B GENERAL DESCRIPTION N-channel enhancement mode logic level field-effect power transistor in a plastic full-pack


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    PDF BUK541-60A/B BUK571-60A/B BUK571 k 246 transistor fet 100-P BUK571-60A BUK571-60B K571 1e43

    13A 56

    Abstract: b5407-17
    Text: R208/201 Integral Modems * Rockwell R208/201 Bell 208A/B and Bell 201C Modem INTRODUCTION The Rockwell R208/201 is a synchronous 4800, 2400 and 1200 bits per second bps modem. It is designed for operation over the public switched telephone network (PSTN) as well as leased


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    PDF R208/201 R208/201 08A/B 08A/B, RS-232-C) 5001B J22198 13A 56 b5407-17

    93L425DC

    Abstract: 93425 1024x1 static ram
    Text: 93425/93L425 1024x1-Bit Static Random Access Memory FAIRCHILD A Schlumberger Company Memory and High Speed Logic Description The 93425 is a 1024-bit read/write Random Access Memory RAM , organized 1024 words by one bit. It is designed for high speed cache, control and buffer


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    PDF 93425/93L425 1024x1-Bit 16-Pin 1024-bit 93L425) 93425XX30 93425YY30 93L425XX35 93425YY40 93L425YY40 93L425DC 93425 1024x1 static ram

    Untitled

    Abstract: No abstract text available
    Text: F A IR C H IL D A Schlumberger Company 93Z667 8192 x 8-Bit Programmable Read Only Memory September 1986 PRELIMINARY INFORMATION Memory and High Speed Logic Description Connection Diagram The 93Z667 is a fully decoded 65,536-bit Programmable Read Only Memory PROM organized 8192 words by eight bits per


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    PDF 93Z667 536-bit 300-mit 24-Pin

    AC176

    Abstract: lr 3303 TC74AC160 ac171 74F160 AC-172
    Text: TC74AC160P/F/FN, TC74AC161P/F/FN, TC74AC162P/F/FN, TC74AC163P/F/FN SY N C H R O N O U S P R E S E T T A B L E 4 - B IT C O U N T E R T C 74 A C 1 80P/ F/ FN D E C A D E . A S Y N C H R O N O U S C L E A R T C 74 A C 1 «1P/ F/ FN B I N A R Y . A S Y N C H R O N O U S C L E A R


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    PDF TC74AC160P/F/FN, TC74AC161P/F/FN, TC74AC162P/F/FN, TC74AC163P/F/FN TC74AC160, TC74AC160/162 TC74AC162P/F/FW, TC74AC163P/F/FW TC74AC160/16Ü AC176 lr 3303 TC74AC160 ac171 74F160 AC-172

    M1012L

    Abstract: 7 segmen CASE DIODE A5L
    Text: QS7025A PRELIMINARY Q High-Speed CMOS 8K x 16 Asynchronous Dual-Port RAM FEATURES QS7025A DESCRIPTION High-speed asynchronous dual-port architecture Access times from either port, 20/25/35/55 ns Industry standard pin-out Independent port access and control


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    PDF QS7025A QS7025A 100-pin 84-pin 128K-bit 32-bit -40PC M1012L 7 segmen CASE DIODE A5L

    Untitled

    Abstract: No abstract text available
    Text: QS7026A, QS70261A PRELIMINARY High-Speed CMOS 16K x 16 Asynchronous Dual-Port RAM Ô QS7026A QS70261A FEATURES/BENEFITS • High-speed asynchronous dual-port architecture • Independent port access and control • Access times from either port, 25/35/45/55 ns


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    PDF QS7026A, QS70261A QS7026A QS70261A 100-pin 84-pin QS7026A

    Untitled

    Abstract: No abstract text available
    Text: QS7025A PRELIMINARY High-Speed CMOS 8K X 16 QS7025A Asynchronous Dual-Port RAM FEATURES/BENEFITS • • High-speed asynchronous dual-port architecture • Independent port access and control • Access times from either port, 25/35/45/55 ns • Master/slave pin, for width expansion


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    PDF QS7025A QS7025A 84-pin 100-pin MDSF-00010-04

    D3254

    Abstract: No abstract text available
    Text: QS7024A PRELIMINARY High-Speed CMOS 4K x 16 Asynchronous Dual-Port RAM Q FEATURES QS7024A DESCRIPTION High-speed asynchronous dual-port architecture Access times from either port, 20/25/35/55 ns Industry standard pin-out Independent port access and control


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    PDF QS7024A QS7024A 100-pin 84-pin 64Kbit 32-bit MDSF-00024-00 D3254

    A11R-A0R

    Abstract: 7 segmen QS7024A
    Text: QS7024A PRELIMINARY High-Speed CMOS 4K x 16 Asynchronous Dual-Port RAM Q FEATURES QS7024A DESCRIPTION High-speed asynchronous dual-port architecture Access times from either port, 20/25/35/55 ns Industry standard pin-out Independent port access and control


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    PDF QS7024A QS7024A 100-pin 84-pin 64Kbit 32-bit MDSF-00024-00 A11R-A0R 7 segmen

    vt16dp8

    Abstract: No abstract text available
    Text: VLSI Tech n o lo gy, in c . PRELIMINARY VT16DP8 1,024x16, 2 ,0 48 x8 DUAL-PORT RAM FEATURES DESCRIPTION • Organization: — Left port: 1,024 x 16 — Right port: 2,048 x 8 The VT16DP8 is a 16,384-bit dual­ port static random access memory. Its left port is organized as 1,024


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    PDF VT16DP8 024x16, VT16DP8 384-bit 16-bit