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    A4 DIODE Search Results

    A4 DIODE Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    CUZ24V Toshiba Electronic Devices & Storage Corporation Zener Diode, 24 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    XCUZ13V Toshiba Electronic Devices & Storage Corporation Zener Diode, 13.0 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    XCUZ36V Toshiba Electronic Devices & Storage Corporation Zener Diode, 36.0 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    CUZ12V Toshiba Electronic Devices & Storage Corporation Zener Diode, 12 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    MUZ5V6 Toshiba Electronic Devices & Storage Corporation Zener Diode, 5.6 V, USM Visit Toshiba Electronic Devices & Storage Corporation

    A4 DIODE Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    transistor 12n60c

    Abstract: 12N60c equivalent 30N120D1 13N50 equivalent 12n60c MOSFET 1200v 30a MOSFET 1000v 30a 30n120d CS20-22MOF1 12N60c MOSFET
    Text: ISOPLUS Summary Title Page Isolated Discrete Packages A4 - 1 ISOPLUS247TM A4 - 2 ISOPLUS i4-PACTM A4 - 3 ISOPLUS247 – ISOPLUS i4-PACTM Isolated Discrete Packages ISOPLUS247™ is the DCB isolated version of the PLUS247™-package TO247 without a mounting hole . The design


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    PDF ISOPLUS247TM ISOPLUS247TM PLUS247TM-package FBO16-08N FBE22-06N1 21-05QC 22-08N 75-01F 21-08i01 transistor 12n60c 12N60c equivalent 30N120D1 13N50 equivalent 12n60c MOSFET 1200v 30a MOSFET 1000v 30a 30n120d CS20-22MOF1 12N60c MOSFET

    IR-Laser-Diode

    Abstract: A4 diode IR-Laser-Diode DVD low noise 780nm laser diode "Photo Diode" cd photo diode ir laser diode cdr photo diode 650nm pick*up dvd*rom
    Text: Photo diode IC KOD-1082 Features DIMENSIONS Unit : Full CMOS Seven Channel, Integrated High Speed Photodiodes and Current to Voltage Transimpedance Amplifiers Four High Speed( 55/35MHz typ) Data Channels (A1/a1 ~ A4/a4) Two Low Speed Tracking Channels (E, F)


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    PDF KOD-1082 55/35MHz 780nm 650nm -81dBm IR-Laser-Diode A4 diode IR-Laser-Diode DVD low noise 780nm laser diode "Photo Diode" cd photo diode ir laser diode cdr photo diode 650nm pick*up dvd*rom

    cd photo diode

    Abstract: IR-Laser-Diode "Photo Diode" 650nm IR-Laser-Diode DVD photo diode CD pickup laser diode 780NM Laser-Diode DIODE A4 DVD RW circuit diagram
    Text: Photo diode IC KOD-1081 Features DIMENSIONS Full CMOS Seven Channel, Integrated High Speed Unit : Photodiodes and Current to Voltage Transimpedance Amplifiers Four High Speed( 55/35MHz typ) Data Channels (A1/a1 ~ A4/a4) Two Low Speed Tracking Channels (E, F)


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    PDF KOD-1081 55/35MHz 780nm 650nm -81dBm cd photo diode IR-Laser-Diode "Photo Diode" 650nm IR-Laser-Diode DVD photo diode CD pickup laser diode 780NM Laser-Diode DIODE A4 DVD RW circuit diagram

    Untitled

    Abstract: No abstract text available
    Text: www.fairchildsemi.com K A4 3 1 S/K A4 3 1 SA/K A4 3 1 SL Progra m m a ble Shunt Re gulat or Features Description • • • • The KA431S/KA431SA/KA431SL are three-terminal adjustable regulator series with a guaranteed thermal stability over applicable temperature ranges. The output


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    PDF KA431S/KA431SA/KA431SL DS400506

    A431

    Abstract: No abstract text available
    Text: www.fairchildsemi.com K A4 3 1 /K A4 3 1 A/K A4 3 1 L Progra m m a ble Shunt Re gulat or Features Description • • • • The KA431/KA431A/KA431L are three-terminal adjustable regulator series with a guaranteed thermal stability over applicable temperature ranges. The output voltage may be


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    PDF KA431/KA431A/KA431L DS400029 A431

    BAV70

    Abstract: BAV74
    Text: BAV70 / BAV74 BAV70 / 74 3 Connection Diagram 3 A4 2 1 1 SOT-23 3 2 MARKING A4 BAV74 BAV70 1 2 JA Small Signal Diode Absolute Maximum Ratings* Symbol VRRM TA = 25°C unless otherwise noted Parameter Maximum Repetitive Reverse Voltage Value Units 70 50 200


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    PDF BAV70 BAV74 OT-23 BAV70 BAV74

    BAV70

    Abstract: BAV74 BAV99 fairchild sot-23 bav70 FAIRCHILD DIODE
    Text: BAV70 / 74 3 CONNECTION DIAGRAMS A4 3 1 2 SOT-23 3 1 2 MARKING A4 BAV74 BAV70 1 JA 2 High Conductance Ultra Fast Diode Sourced from Process 1P. See BAV99 for characteristics. Absolute Maximum Ratings* Symbol TA = 25°C unless otherwise noted Parameter Value


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    PDF BAV70 OT-23 BAV74 BAV70 BAV99 BAV70oduct BAV74 fairchild sot-23 bav70 FAIRCHILD DIODE

    fairchild sot-23 bav70

    Abstract: sot-23 body marking A4 MARKING W2 SOT23 BAV70 ON marking code w2 sot23 fairchild s sot-23 Device Marking BAV70 BAV74 BAV99 sot-23 MARKING CODE A4
    Text: BAV70 / BAV74 BAV70 / 74 3 CONNECTION DIAGRAMS A4 3 1 2 SOT-23 3 1 BAV70 2 MARKING A4 BAV74 1 JA 2 High Conductance Ultra Fast Diode Sourced from Process 1P. See BAV99 for characteristics. Absolute Maximum Ratings* Symbol TA = 25°C unless otherwise noted


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    PDF BAV70 BAV74 OT-23 BAV70 BAV99 fairchild sot-23 bav70 sot-23 body marking A4 MARKING W2 SOT23 BAV70 ON marking code w2 sot23 fairchild s sot-23 Device Marking BAV74 sot-23 MARKING CODE A4

    BAV70

    Abstract: BAV74 1JA2 BAV70 ON diode bav70 a433
    Text: BAV70 / BAV74 Discrete POWER & Signal Technologies N BAV70 / 74 3 1 2 SOT-23 1 3 CONNECTION DIAGRAMS A4 3 2 MARKING A4 BAV74 BAV70 1 JA 2 High Conductance Ultra Fast Diode Sourced from Process 1P. Absolute Maximum Ratings* Symbol TA = 25°C unless otherwise noted


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    PDF BAV70 BAV74 OT-23 BAV70 BAV7V74 BAV74 1JA2 BAV70 ON diode bav70 a433

    Untitled

    Abstract: No abstract text available
    Text: MII 200-12 A4 MID 200-12 A4 MDI 200-12 A4 IC25 = 270 A VCES = 1200 V VCE sat typ. = 2.2 V IGBT Modules Short Circuit SOA Capability Square RBSOA MII MDI MID 3 3 3 1 2 3 11 10 9 8 9 1 11 10 2 1 11 10 8 9 8 1 2 2 E 72873 Symbol Conditions Maximum Ratings VCES


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    PDF

    ic equivalent MID 400

    Abstract: E72873
    Text: MII 300-12 A4 MID 300-12 A4 MDI 300-12 A4 IC25 = 330 A VCES = 1200 V VCE sat typ. = 2.2 V IGBT Modules Short Circuit SOA Capability Square RBSOA MII MID 3 MDI 3 3 1 2 3 11 10 9 8 9 1 11 10 2 1 11 10 8 9 8 1 2 2 E 72873 Symbol Conditions Maximum Ratings VCES


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    PDF load20 ic equivalent MID 400 E72873

    E72873

    Abstract: 20012 W8020 200-12A4 ic equivalent MID 400
    Text: MII 200-12 A4 MID 200-12 A4 MDI 200-12 A4 IC25 = 270 A VCES = 1200 V VCE sat typ. = 2.2 V IGBT Modules Short Circuit SOA Capability Square RBSOA MII MID 3 MDI 3 3 1 2 3 11 10 9 8 9 1 11 10 2 1 11 10 8 9 8 1 2 2 E 72873 Symbol Conditions Maximum Ratings VCES


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    PDF load16 E72873 20012 W8020 200-12A4 ic equivalent MID 400

    BAV70

    Abstract: BAV74
    Text: BAV70 / 74 BAV70 / 74 Connection Diagram 3 3 A4 2 1 1 BAV70 SOT-23 3 2 MARKING A4 BAV74 1 JA 2 Small Signal Diode Absolute Maximum Ratings * TA = 25°C unless otherwise noted Symbol VRRM Parameter Maximum Repetitive Reverse Voltage Value 70 50 Units V V IF AV


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    PDF BAV70 BAV70 OT-23 BAV74 BAV74

    Untitled

    Abstract: No abstract text available
    Text: BAV70 / 74 BAV70 / 74 Connection Diagram 3 3 A4 2 1 1 BAV70 SOT-23 3 2 MARKING A4 BAV74 1 JA 2 Small Signal Diode Absolute Maximum Ratings * TA = 25°C unless otherwise noted Symbol VRRM Parameter Maximum Repetitive Reverse Voltage Value 70 50 Units V V IF AV


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    PDF BAV70 BAV70 OT-23 BAV74

    Untitled

    Abstract: No abstract text available
    Text: Laser Diodes 808 nm High Brightness Laser Diode BLD-81-tt-20W-A4-C BLD-81-tt-30W-A4-C High Power Laser Diode Modules are manufactured by adopting specialized fibercoupling techniques, resulting in volume products with a high efficiency, stability and superior beam quality. The products are achieved by transforming the asymmetric


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    PDF BLD-81-tt-20W-A4-C BLD-81-tt-30W-A4-C

    Untitled

    Abstract: No abstract text available
    Text: MII 150-12 A4 MID 150-12 A4 MDI 150-12 A4 IC25 = 180 A VCES = 1200 V VCE sat typ. = 2.2 V IGBT Modules Short Circuit SOA Capability Square RBSOA MII MID MDI 3 3 3 1 2 3 11 10 9 8 9 1 11 10 2 1 11 10 Symbol Conditions VCES VCGR TJ = 25°C to 150°C TJ = 25°C to 150°C; RGE = 20 kW


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    PDF

    Untitled

    Abstract: No abstract text available
    Text: MII 150-12 A4 MID 150-12 A4 MDI 150-12 A4 IC25 = 180 A = 1200 V VCES VCE sat typ. = 2.2 V IGBT Modules Short Circuit SOA Capability Square RBSOA MII MID 3 MDI 3 3 1 2 3 11 10 9 8 9 1 11 10 2 1 11 10 8 9 1 2 2 Preliminary data Symbol Conditions VCES VCGR TJ = 25°C to 150°C


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    PDF D-68623

    Untitled

    Abstract: No abstract text available
    Text: Laser Diodes 976 nm High Brightness Laser Diode BLD-98-tt-20w-A4-C BLD-98-tt-30w-A4-C High Power Laser Diode Modules are manufactured by adopting specialized fibercoupling techniques, resulting in volume products with a high efficiency, stability and superior beam quality. The products are achieved by transforming the asymmetric


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    PDF BLD-98-tt-20w-A4-C BLD-98-tt-30w-A4-C

    Untitled

    Abstract: No abstract text available
    Text: BurrĆBrown Products from Texas Instruments OPA340 OPA2340 OPA4340 OP A4 340 OP A3 40 OPA 2340 OP A4 340 SBOS073A – SEPTEMBER 1997 – REVISED APRIL 2007 SINGLE-SUPPLY, RAIL-TO-RAIL OPERATIONAL AMPLIFIERS MicroAmplifier Series FEATURES DESCRIPTION •


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    PDF OPA340 OPA2340 OPA4340 SBOS073A

    Untitled

    Abstract: No abstract text available
    Text: MII 200-12 A4 MID 200-12 A4 MDI 200-12 A4 IC25 = 270 A = 1200 V VCES VCE sat typ. = 2.2 V IGBT Modules Short Circuit SOA Capability Square RBSOA MII MID 3 MDI 3 3 1 2 3 11 10 9 8 9 1 11 10 2 1 11 10 8 9 1 2 2 Preliminary data Symbol Conditions VCES VCGR TJ = 25°C to 150°C


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    PDF D-68623

    Untitled

    Abstract: No abstract text available
    Text: MII 300-12 A4 MID 300-12 A4 MDI 300-12 A4 IC25 = 330 A = 1200 V VCES VCE sat typ. = 2.2 V IGBT Modules Short Circuit SOA Capability Square RBSOA MII MID 3 MDI 3 3 1 2 3 11 10 9 8 9 1 11 10 2 1 11 10 8 9 1 2 2 Preliminary data Symbol Conditions VCES VCGR TJ = 25°C to 150°C


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    PDF D-68623

    Untitled

    Abstract: No abstract text available
    Text: BurrĆBrown Products from Texas Instruments OPA340 OPA2340 OPA4340 OP A4 340 OP A3 40 OPA 2340 OP A4 340 SBOS073A – SEPTEMBER 1997 – REVISED APRIL 2007 SINGLE-SUPPLY, RAIL-TO-RAIL OPERATIONAL AMPLIFIERS MicroAmplifier Series FEATURES DESCRIPTION •


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    PDF OPA340 OPA2340 OPA4340 SBOS073A

    Untitled

    Abstract: No abstract text available
    Text: Li IXYS Mil 200-12 A4 IGBT Modules ^C25 V CES V CE sat typ. Short Circuit SOA Capability MID 200-12 A4 MDI 200-12 A4 270 A 1200 V 2.2 V Square RBSOA Mil MID MDI ’ I I : : I' ' M sc^J 90-+ , 3 I 0 l Preliminary data TO Symbol Conditions Maximum Ratings VcES


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    PDF D-68623

    Untitled

    Abstract: No abstract text available
    Text: Mil 300-12 A4 Li IXYS IGBT Modules ^C25 V CES V CE sat typ. Short Circuit SOA Capability MID 300-12 A4 MDI 300-12 A4 330 A 1200 V 2.2 V Square RBSOA Mil MID MDI ’ I I : : I' ' , 3 I 0 M l sc^J 9 0 -+ Preliminary data T O E 72873 Symbol Conditions Maximum Ratings


    OCR Scan
    PDF D-68623