A4 DIODE Search Results

Contextual Info: www.fairchildsemi.com K A4 3 1 S/K A4 3 1 SA/K A4 3 1 SL Progra m m a ble Shunt Re gulat or Features Description • • • • The KA431S/KA431SA/KA431SL are three-terminal adjustable regulator series with a guaranteed thermal stability over applicable temperature ranges. The output

A431

Contextual Info: www.fairchildsemi.com K A4 3 1 /K A4 3 1 A/K A4 3 1 L Progra m m a ble Shunt Re gulat or Features Description • • • • The KA431/KA431A/KA431L are three-terminal adjustable regulator series with a guaranteed thermal stability over applicable temperature ranges. The output voltage may be

Contextual Info: Li IXYS Mil 200-12 A4 IGBT Modules ^C25 V CES V CE sat typ. Short Circuit SOA Capability MID 200-12 A4 MDI 200-12 A4 270 A 1200 V 2.2 V Square RBSOA Mil MID MDI ’ I I : : I' ' M sc^J 90-+ , 3 I 0 l Preliminary data TO Symbol Conditions Maximum Ratings VcES

fairchild sot-23 bav70

Abstract: sot-23 body marking A4 MARKING W2 SOT23 BAV70 ON marking code w2 sot23 fairchild s sot-23 Device Marking BAV70 BAV74 BAV99 sot-23 MARKING CODE A4
Contextual Info: BAV70 / BAV74 BAV70 / 74 3 CONNECTION DIAGRAMS A4 3 1 2 SOT-23 3 1 BAV70 2 MARKING A4 BAV74 1 JA 2 High Conductance Ultra Fast Diode Sourced from Process 1P. See BAV99 for characteristics. Absolute Maximum Ratings* Symbol TA = 25°C unless otherwise noted

Contextual Info: Mil 300-12 A4 Li IXYS IGBT Modules ^C25 V CES V CE sat typ. Short Circuit SOA Capability MID 300-12 A4 MDI 300-12 A4 330 A 1200 V 2.2 V Square RBSOA Mil MID MDI ’ I I : : I' ' , 3 I 0 M l sc^J 9 0 -+ Preliminary data T O E 72873 Symbol Conditions Maximum Ratings

ic equivalent MID 400

Abstract: E72873
Contextual Info: MII 300-12 A4 MID 300-12 A4 MDI 300-12 A4 IC25 = 330 A VCES = 1200 V VCE sat typ. = 2.2 V IGBT Modules Short Circuit SOA Capability Square RBSOA MII MID 3 MDI 3 3 1 2 3 11 10 9 8 9 1 11 10 2 1 11 10 8 9 8 1 2 2 E 72873 Symbol Conditions Maximum Ratings VCES

E72873

Abstract: 20012 W8020 200-12A4 ic equivalent MID 400
Contextual Info: MII 200-12 A4 MID 200-12 A4 MDI 200-12 A4 IC25 = 270 A VCES = 1200 V VCE sat typ. = 2.2 V IGBT Modules Short Circuit SOA Capability Square RBSOA MII MID 3 MDI 3 3 1 2 3 11 10 9 8 9 1 11 10 2 1 11 10 8 9 8 1 2 2 E 72873 Symbol Conditions Maximum Ratings VCES

ixys 150-12

Abstract: E72873 resistor 240 diode A4 56 ic equivalent MID 400
Contextual Info: MII 150-12 A4 MID 150-12 A4 MDI 150-12 A4 IC25 = 180 A VCES = 1200 V VCE sat typ. = 2.2 V IGBT Modules Short Circuit SOA Capability Square RBSOA MII MID MDI 3 3 3 1 2 3 11 10 9 8 9 1 11 10 2 1 11 10 Symbol Conditions VCES VCGR TJ = 25°C to 150°C TJ = 25°C to 150°C; RGE = 20 kW

Contextual Info: MII 200-12 A4 MID 200-12 A4 MDI 200-12 A4 IC25 = 270 A = 1200 V VCES VCE sat typ. = 2.2 V IGBT Modules Short Circuit SOA Capability Square RBSOA MII MID 3 MDI 3 3 1 2 3 11 10 9 8 9 1 11 10 2 1 11 10 8 9 1 2 2 Preliminary data Symbol Conditions VCES VCGR TJ = 25°C to 150°C

ES760

Contextual Info: Li IXYS Mil 150-12 A4 IGBT Modules ^C 25 V CES V C E s a t typ. Short Circuit SOA Capability MID 150-12 A4 MDI 150-12 A4 180 A 1200 V 2.2 V Square RBSOA M il MID ’ I I MDI I' ' M : : sc^J 9 0 -+ , 3 I l P re lim in a ry data TO S ym bo l C o n d itio n s

Contextual Info: OPA4872-EP OP A4 87 2 www.ti.com. SBOS444 – DECEMBER 2008 4:1 HIGH-SPEED MULTIPLEXER

Contextual Info: OPA4872 OP A4 87 2 www.ti.com . SBOS346B – JUNE 2007 – REVISED AUGUST 2008 4:1 High-Speed Multiplexer

0002K

Abstract: 550-12A4
Contextual Info: MID 550-12 A4 MDI 550-12 A4 IGBT Modules IC25 = 670 A VCES = 1200 V VCE sat typ. = 2.3 V Short Circuit SOA Capability Square RBSOA MID MDI 3 3 1 2 3 11 10 9 1 11 10 8 9 8 1 2 2 E 72873 Preliminary data Symbol Conditions Maximum Ratings VCES VCGR TJ = 25°C to 150°C

27CI6

Contextual Info: MII 200-12 A4 IGBT Modules ^C25 Short Circuit SOA Capability V CES V CE sat typ. MID 200-12 A4 270 A 1200 V 2.2 V Square RBSOA MID MDI Preliminary data E 72873 Symbol C onditions Maximum Ratings V qeS Tj = 25°C to 150°C 1200 V VCGR Tj = 25°C to 150°C; RGE = 20 k il

ic equivalent MID 400

Abstract: E72873 550-12A4 high power free wheeling diode
Contextual Info: MID 550-12 A4 MDI 550-12 A4 IGBT Modules IC25 = 670 A VCES = 1200 V VCE sat typ. = 2.3 V Short Circuit SOA Capability Square RBSOA MID MDI 3 3 1 2 3 11 10 9 1 11 10 8 9 8 1 2 2 E 72873 Symbol Conditions Maximum Ratings VCES VCGR TJ = 25°C to 150°C TJ = 25°C to 150°C; RGE = 20 kW

Contextual Info: LESHAN RADIO COMPANY, LTD. Monolithic Dual Switching Diode Common Cathode LBAV70LT1G FEATURE • We declare that the material of product 3 compliance with RoHS requirements. 1 DEVICE MARKING AND ORDERING INFORMATION Device Marking 2 Shipping LBAV70LT1G A4

marking a7

Abstract: marking a1 marking A4 BAV99 BAW56 A7 marking bav99 marking Diode BAV99 SOT23 A4 marking diode diode bav70
Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO.,LTD SOT-23 Plastic-Encapsulate Diodes BAW56/BAV70/BAV99 SOT-23 SWITCHING DIODE FEATURES z Fast Switching Speed z For General Purpose Switching Applications z High Conductance BAW56 Marking: A1 BAV70 Marking: A4

Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO.,LTD SOT-23 Plastic-Encapsulate Diodes BAW56/BAV70/BAV99 SOT-23 SWITCHING DIODE FEATURES z Fast Switching Speed z For General Purpose Switching Applications z High Conductance BAW56 Marking: A1 BAV70 Marking: A4

Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO.,LTD SOT-23 Plastic-Encapsulate Diodes BAW56/BAV70/BAV99 SOT-23 SWITCHING DIODE FEATURES z Fast Switching Speed z For General Purpose Switching Applications z High Conductance BAW56 Marking: A1 BAV70 Marking: A4

BAV70

Contextual Info: BAV70 Silicon Epitaxial Planar Switching Diode FEATURES Small package Low forward voltage Fast reverse recovery time Small total capacitance APPLICATIONS Marking Code: A4 Ultra high speed switching application SOT-23 Plastic Package Absolute Maximum Ratings Ta = 25℃

IR switch

Abstract: marking a4 BAV70
Contextual Info: BAV70 SILICON EPITAXIAL PLANAR SWITCHING DIODE Features • Small package • Low forward voltage • Fast reverse recovery time • Small total capacitance 3 2 1 Applications Marking Code: A4 SOT-23 Plastic Package • Ultra high speed switching application

Contextual Info: MII 300-12 A4 IGBT Modules ^C 25 Short Circuit SOA Capability VCES V C E sa t typ. MID 300-12 A4 330 A 1200 V 2.2 V Square RBSOA MID MDI P relim inary data E 72873 S ym bo l C o n d itio n s M axim um R atings V qeS T j = 25°C to 150°C 1200 V V CGR T j = 25°C to 150°C ; RGE = 20 k il

sod-23

Abstract: diode sod23 SOD 23 marking a7 SOD23 marking A4 marking A1 diode marking a4 MARKING A4 transistor SILICON SWITCHING DIODE
Contextual Info: BAV70 SWITCHING DIODE PRODUCT SUMMARY SOT-23 SOD-23 Plastic-Encapsulate Diodes FEATURES Fast Switching Speed For General Purpose Switching Applications High Conductance BAW56 Marking: A1 BAV70 Marking: A4 BAV99 Marking: A7 Pb-free; RoHS-compliant MAXIMUM RATINGS @TA=25°C

LM-101-A4

Contextual Info: LM-101-A4 650nm Diode Laser Module Multi purpose, high quality, low cost red laser diode module. Driver electronics already included. Laser class II device Specifications 25°C Min. Optical CW Output Power PO Center Wavelength λC Output Aparture Beam Size at 6M