C TV memory ic programme
Abstract: mitsubishi memory card busy 60 MF88M1-GMCAVXX 001FFFFH
Text: MITSUBISHI MEMORY CARD PRELIMINARY FLASH MEMORY CARDS MF82M1-GMCAVXX 8/16-bit Data Bus MF84M1-GMCAVXX Flash Memory Card MF88M1-GMCAVXX MF816M-GMCAVXX MF820M-GMCAVXX MF832M-GMCAVXX Connector Type MF82M1-GNCAVXX Two- piece 68-pin MF84M1-GNCAVXX MF88M1-GNCAVXX
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8/16-bit
MF82M1-GMCAVXX
MF84M1-GMCAVXX
MF88M1-GMCAVXX
MF816M-GMCAVXX
MF820M-GMCAVXX
MF832M-GMCAVXX
MF82M1-GNCAVXX
MF84M1-GNCAVXX
MF88M1-GNCAVXX
C TV memory ic programme
mitsubishi memory card busy 60
001FFFFH
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C TV memory ic programme
Abstract: d1340 MF816M-GMCAVXX MF816M-GNCAVXX MF820M-GMCAVXX MF820M-GNCAVXX MF82M1-GMCAVXX MF82M1-GNCAVXX mitsubishi memory card busy 60 MF84M1-GMCAVXX
Text: MITSUBISHI MEMORY CARD FLASH MEMORY CARDS MF82M1-GMCAVXX 8/16-bit Data Bus MF84M1-GMCAVXX MF88M1-GMCAVXX Flash Memory Card MF816M-GMCAVXX MF820M-GMCAVXX MF832M-GMCAVXX Connector Type MF82M1-GNCAVXX MF84M1-GNCAVXX Two- piece 68-pin MF88M1-GNCAVXX MF816M-GNCAVXX
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MF82M1-GMCAVXX
8/16-bit
MF84M1-GMCAVXX
MF88M1-GMCAVXX
MF816M-GMCAVXX
MF820M-GMCAVXX
MF832M-GMCAVXX
MF82M1-GNCAVXX
MF84M1-GNCAVXX
68-pin
C TV memory ic programme
d1340
MF816M-GMCAVXX
MF816M-GNCAVXX
MF820M-GMCAVXX
MF820M-GNCAVXX
MF82M1-GMCAVXX
MF82M1-GNCAVXX
mitsubishi memory card busy 60
MF84M1-GMCAVXX
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A5 GNC
Abstract: CY62128BLL-70ZRC CY62128B CY62128BLL-55SC CY62128BLL-55SI 0/mosfet A5 GNC
Text: CY62128B MoBL 128K x 8 Static RAM and three-state drivers. This device has an automatic power-down feature that reduces power consumption by more than 75% when deselected. 1CY62128B MoBL™ Features • 4.5V–5.5V operation • CMOS for optimum speed/power
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CY62128B
1CY62128B
A5 GNC
CY62128BLL-70ZRC
CY62128BLL-55SC
CY62128BLL-55SI
0/mosfet A5 GNC
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A5 GNC
Abstract: 62128b-55 CY62128BLL CY62128B CY62128BLL-55SC CY62128BLL-55SI CY62128BLL-55ZI 62128B-70 62128b70
Text: CY62128B MoBL 128K x 8 Static RAM Features automatic power-down feature that reduces consumption by more than 75% when deselected. • 4.5V – 5.5V operation • CMOS for optimum speed/power • Low active power 70 ns, LL version — 82.5 mW (max.) (15 mA)
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CY62128B
CY62128B
CY62128BLL-55ZC,
CY62128BLL-55ZAC,
CY62128BLL-55ZRC,
CY62128BLL-70ZAC,
CY62128BLL-70ZRI,
CY62128BLL-70ZRC
A5 GNC
62128b-55
CY62128BLL
CY62128BLL-55SC
CY62128BLL-55SI
CY62128BLL-55ZI
62128B-70
62128b70
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A5 GNC
Abstract: No abstract text available
Text: 28B MoBL CY62128B MoBL® 128K x 8 Static RAM Features power-down feature that reduces power consumption by more than 75% when deselected. • 4.5V–5.5V operation • CMOS for optimum speed/power • Low active power 70 ns, LL version — 82.5 mW (max.) (15 mA)
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CY62128B
A5 GNC
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a5 gnc
Abstract: A1 GNC
Text: CY62128BN MoBL 1-Mbit 128K x 8 Static RAM Functional Description[1] Features • Temperature Ranges The CY62128BN is a high-performance CMOS static RAM organized as 128K words by 8 bits. Easy memory expansion is provided by an active LOW Chip Enable (CE1), an active
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CY62128BN
32-lead
32-lead
a5 gnc
A1 GNC
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CY62128BLL-55SI
Abstract: CY62128B CY62128BLL-70SI
Text: CY62128B MoBL 128K x 8 Static RAM Functional Description[1] Features • Temperature Ranges — Commercial: 0°C to 70°C The CY62128B is a high-performance CMOS static RAM organized as 131,072 words by 8 bits. Easy memory expansion is provided by an active LOW Chip Enable CE1 ,
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CY62128B
CY62128B
CY62128BLL-55ZC,
CY62128BLL-55ZAC,
CY62128BLL-55ZRC,
CY62128BLL-70ZAC,
CY62128BLL-70ZRI,
CY62128BLL-70ZRC
CY62128BLL-55SI
CY62128BLL-70SI
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05300
Abstract: CY62128BLL-55SXI A5 GNC CY62128BLL-55SXC TSOP 87 CY62128B CY62128BLL-55ZXI
Text: CY62128B MoBL 128K x 8 Static RAM Functional Description[1] Features • Temperature Ranges The CY62128B is a high-performance CMOS static RAM organized as 131,072 words by 8 bits. Easy memory expansion is provided by an active LOW Chip Enable CE1 , an active HIGH Chip Enable (CE2), an active LOW Output
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CY62128B
CY62128B
CY62128BLL-55ZC,
CY62128BLL-55ZAC,
CY62128BLL-55ZRC,
CY62128BLL-70ZAC,
CY62128BLL-70ZRI,
CY62128BLL-70ZRC
05300
CY62128BLL-55SXI
A5 GNC
CY62128BLL-55SXC
TSOP 87
CY62128BLL-55ZXI
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a5 gnc
Abstract: CY62128BLL-55SXC CY62128B CY62128BLL-55SC cy62128bll-55zc cy62128bll
Text: CY62128B MoBL 1-Mbit 128K x 8 Static RAM Functional Description[1] Features • Temperature Ranges — Commercial: 0°C to 70°C The CY62128B is a high-performance CMOS static RAM organized as 131,072 words by 8 bits. Easy memory expansion is provided by an active LOW Chip Enable (CE1),
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CY62128B
CY62128B
CY62128BLL-55ZC,
CY62128BLL-55ZAC,
CY62128BLL-55ZRC,
CY62128BLL-70ZAC,
CY62128BLL-70ZRI,
CY62128BLL-70ZRC
a5 gnc
CY62128BLL-55SXC
CY62128BLL-55SC
cy62128bll-55zc
cy62128bll
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A5 GNC
Abstract: CY62128B
Text: CY62128B MoBL 1-Mbit 128K x 8 Static RAM Functional Description[1] Features • Temperature Ranges — Commercial: 0°C to 70°C The CY62128B is a high-performance CMOS static RAM organized as 131,072 words by 8 bits. Easy memory expansion is provided by an active LOW Chip Enable (CE1),
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CY62128B
CY62128B
sta128K
CY62128BLL-55ZC,
CY62128BLL-55ZAC,
CY62128BLL-55ZRC,
CY62128BLL-70ZAC,
CY62128BLL-70ZRI,
CY62128BLL-70ZRC
A5 GNC
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CY62128BN
Abstract: CY62128BNLL-55SXI CY62128BNLL-55ZXI CY62128BNLL-70SXA
Text: CY62128BN MoBL 1-Mbit 128K x 8 Static RAM Functional Description[1] Features • Temperature Ranges The CY62128BN is a high-performance CMOS static RAM organized as 128K words by 8 bits. Easy memory expansion is provided by an active LOW Chip Enable (CE1), an active
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CY62128BN
CY62128BN
CY62128BNLL-55SXI
CY62128BNLL-55ZXI
CY62128BNLL-70SXA
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Untitled
Abstract: No abstract text available
Text: THIS SPEC IS OBSOLETE Spec No: 001-06498 Spec Title: CY62128BN MOBL R 1-MBIT (128K X 8) STATIC RAM Sunset Owner: Anuj Chakrapani (AJU) Replaced by: None CY62128BN MoBL 1-Mbit (128K x 8) Static RAM Functional Description[1] Features • Temperature Ranges
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CY62128BN
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CY62128BNLL-70SXI
Abstract: CY62128BNLL-70ZXC CY62128BN CY62128BNLL-55SC CY62128BNLL-55SI CY62128BNLL-55SXC
Text: CY62128BN MoBL 1-Mbit 128K x 8 Static RAM Functional Description[1] Features • Temperature Ranges The CY62128BN is a high-performance CMOS static RAM organized as 128K words by 8 bits. Easy memory expansion is provided by an active LOW Chip Enable (CE1), an active
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CY62128BN
CY62128BN
CY62128BNLL-70SXI
CY62128BNLL-70ZXC
CY62128BNLL-55SC
CY62128BNLL-55SI
CY62128BNLL-55SXC
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CY62128BN
Abstract: CY62128BNLL-55SC CY62128BNLL-55SI CY62128BNLL-55SXC
Text: CY62128BN MoBL 1-Mbit 128K x 8 Static RAM Functional Description[1] Features • Temperature Ranges The CY62128BN is a high-performance CMOS static RAM organized as 128K words by 8 bits. Easy memory expansion is provided by an active LOW Chip Enable (CE1), an active
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CY62128BN
CY62128BN
CY62128BNLL-55SC
CY62128BNLL-55SI
CY62128BNLL-55SXC
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C8269
Abstract: 3.5 digits lcd display
Text: RCL Semiconductors Ltd. C9389E Touch Tone Calculator LSI GENERAL D E S C R IP T IO N C9389E is a CMOS LSI calculator chip with 8 digits arithmetic operations, single memory, extraction-of-square-root percentage calculation, auto power off and punctuation and touch tone
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C9389E
C9389E.
C9389E
C8269
3.5 digits lcd display
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Untitled
Abstract: No abstract text available
Text: HBLTEK f V H T1622 RAM Mapping 32x8 LCD Controller for I/O ^iC Features • • • • • • • • • • Operating voltage: 2.7V-5.2V Built-in RC oscillator 1/4 bias, 1/8 duty, frame frequency is 64Hz Max. 32x8 patterns, 8 commons, 32 segments Built-in internal resistor type bias generator
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T1622
32kHz
HT1622
HT1622.
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m55j2
Abstract: M23256 M23256A M23256AB1 M23256AF1 M23256B1 M23256F1 23256
Text: PRELIMINARY DATA 256K-BIT READ ONLY MEMORIES ACCESS TIM E 250 ns MAX CO M PLETELY STATIC OPERATION SINGLE + 5 V ± 10% POWER SUPPLY 32 7 6 8 x 8 BIT O RGANIZATION INPUTS AND OUTPUTS TTL COM PATIBLE THREE STATE OUTPUTS FOR DIRECT BUS INTERFACE M23256A OR DERING N UM B E R S : M23256B1
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256K-BIT
768x8
M23256A
M23256
M23256A
2144-bit
M23256
m55j2
M23256AB1
M23256AF1
M23256B1
M23256F1
23256
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M5M23160
Abstract: E5EM
Text: MITSUBISHI LS Is M5M23160-XXXP,FP,VP,RV 16777216-BIT 1048576-WORD BY 16-BIT CMOS MASK-PROGRAMMABLE ROM /16777216-BIT (2097152-WORD BY 8-BIT) CMOS MASK-PROGRAMMABLE ROM DESCRIPTION The M 5 M 231 60-X X X P (,F P ,V P or R V )is a 167772 16-bit mask-programmable high speed read-only memory.
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M5M23160-XXXP
16777216-BIT
1048576-WORD
16-BIT)
/16777216-BIT
2097152-WORD
16-bit
42pin
44pin
48pin
M5M23160
E5EM
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Untitled
Abstract: No abstract text available
Text: Advance Information lllln llll I W T DATA SHEET _ M September 1989 HM 65770 4 KX 4 HIGH SPEED CMOS SRAM WITH OUTPUT ENABLE FEATURES . FAST ACCESS TIME MILITARY : 25/35/45 ns max COMMERCIAL : 20/25/35/45 ns (max) . LOW POWER CONSUMPTION ACTIVE : 385 mW (max)
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asus schematic diagram
Abstract: asus f3 asus 74MC14 Asus P5 FJ 3528 asus block diagram asus diagram asus a6 EL B17 A017
Text: SLK BLOCK DIAGRAM V 2.00 < INTEL COPPERMINE GCL I N V ,LCD SBT OZ998 1,2,3 37 38 HOST BUS MEM BUS INTEL ON BOARD 64MB SDRAM CLOCKS 9248-10 1 c* CO I/O BOARD IC S SODIMM ONE SLOT 11 PCI BUS 10 USB P O R T *2 RJ-11 CARDBUS CONTREOLLER « I 1451 W 1 8 ,1 9 R J -4 5
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OZ998
RJ-11
8139C
M97338
NS97338
asus schematic diagram
asus f3
asus
74MC14
Asus P5
FJ 3528
asus block diagram
asus diagram
asus a6
EL B17 A017
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a5 gnc
Abstract: No abstract text available
Text: MITSUBISHI LSIs M5M5256CP,FP,KP,VP,RV-85LL,-85XL, -10LL.-10XL 262144-BIT 32768-WORD BY 8-BIT CM0S STATIC RAM DESCRIPTION This M 5M 5256C P , FP, KP, VP, RV is a 26;?14 4 - bit CMOS static RAM s organized as 3 2 7 6 8 -w o rd s by 8 -b its w hich s fabricated using h igh -pe rform an ce 3 polysilicon CMOS
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M5M5256CP
RV-85LL
-85XL,
-10LL
-10XL
262144-BIT
32768-WORD
5256C
5256CVP,
MEiM5256CVP
a5 gnc
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Untitled
Abstract: No abstract text available
Text: Raytheon Electronics Semiconductor Division R296XX/R297XX S tandard PROMs and P ow er-S w itched SPROMs Features Description • Devices are available in military -55°C to +125°C temperature range • Standard PROMs are offered in power-switched SPROM
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R296XX/R297XX
24-pin,
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OF128
Abstract: HM-65262C-5 65262
Text: IM III V I M É 9 March 1994 HM 65262 DATA SHEET_ 16 K x1 VERY LOW POWER CMOS SRAM FEATURES . . . . . . ACCESS TIME COMMERCIAL : 70 ns max MILITARY/INDUSTRIAL : 70/85 ns (max) VERY LOW POWER CONSUMPTION ACTIVE: 110 mW(typ) STANDBY : 2.0 fiW (typ)
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65262/Rev
00D3S1Ã
OF128
HM-65262C-5
65262
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Untitled
Abstract: No abstract text available
Text: TOSHIBA TC55257CPI/CFVCSPI/CFIVCTEI-85/10 SILICON GATE CMOS PRELIMINARY 32,768 WORD x 8 BIT STATIC RAM Description TheTC55257CPI is a 262,14^ bit CMOS static random access memory organized as 32,768 words by 8 bits and operated from a single 5V power supply. Advanced circuit techniques provide both high speed and low power features with an operating current of
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TC55257CPI/CFVCSPI/CFIVCTEI-85/10
TheTC55257CPI
TC55257CPI
TC55257CPI/CFI/CSPI/CFTI/CTRI-85/10
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