A6 TSOP-6 MARKING Search Results

Contextual Info: ADVANCE MT28SF002 256K x 8 FLASH MEMORY 256K x 8 S m artV o lta g e FEATURES 40-Pin TSOP Type I FB-1 A16 A15 A14 A13 A12 A11 A9 A8 WE RP V pp WP NC A7 A6 A5 A4 A3 A2 A1 MARKING • Tim ing (5V V cr/3.3V Vcc) 60ns/90ns access -6 80ns/110ns access -8 100ns/150ns access

Contextual Info: DATA SHEET MOS INTEGRATED CIRCUIT µPD23C16000LW 16M-BIT MASK-PROGRAMMABLE ROM 2M-WORD BY 8-BIT BYTE MODE /1M-WORD BY 16-BIT (WORD MODE) Description The µPD23C16000LW is a 16,777,216 bits mask-programmable ROM. The word organization is selectable (BYTE mode: 2,097,152 words by 8 bits, WORD mode: 1,048,576 words by 16 bits).

UPD23C8000XGY-XXX-MKH

Abstract: UPD23C8000XCZ-XXX UPD23C8000XCZ
Contextual Info: DATA SHEET MOS INTEGRATED CIRCUIT µPD23C8000X 8M-BIT MASK-PROGRAMMABLE ROM 1M-WORD BY 8-BIT BYTE MODE /512K-WORD BY 16-BIT (WORD MODE) Description The µPD23C8000X is a 8, 388, 608 bits mask-programmable ROM. The word organization is selectable (BYTE mode: 1, 048, 576 words by 8 bits, WORD mode: 524, 288 words by 16 bits).

upd23c8000

Abstract: UPD23C80
Contextual Info: DATA SHEET MOS INTEGRATED CIRCUIT µPD23C8000LX 8M-BIT MASK-PROGRAMMABLE ROM 1M-WORD BY 8-BIT BYTE MODE /512K-WORD BY 16-BIT (WORD MODE) Description The µPD23C8000LX is a 8,388,608 bits mask-programmable ROM. The word organization is selectable (BYTE mode: 1,048,576 words by 8 bits, WORD mode: 524,288 words by 16 bits).

Contextual Info: DATA SHEET MOS INTEGRATED CIRCUIT µPD23C16000W 16M-BIT MASK-PROGRAMMABLE ROM 2M-WORD BY 8-BIT BYTE MODE /1M-WORD BY 16-BIT (WORD MODE) Description The µPD23C16000W is a 16,777,216 bits mask-programmable ROM. The word organization is selectable (BYTE mode: 2,097,152 words by 8 bits, WORD mode: 1,048,576 words by 16 bits).

Contextual Info: DATA SHEET MOS INTEGRATED CIRCUIT µPD23C16040A 16M-BIT MASK-PROGRAMMABLE ROM 2M-WORD BY 8-BIT BYTE MODE /1M-WORD BY 16-BIT (WORD MODE) PAGE ACCESS MODE Description The µPD23C16040A is a 16,777,216 bits mask-programmable ROM. The word organization is selectable (BYTE

Contextual Info: DATA SHEET MOS INTEGRATED CIRCUIT µPD23C32000L 32M-BIT MASK-PROGRAMMABLE ROM 4M-WORD BY 8-BIT BYTE MODE /2M-WORD BY 16-BIT (WORD MODE) Description The µPD23C32000L is a 33,554,432 bits mask-programmable ROM. The word organization is selectable (BYTE mode: 4,194,304 words by 8 bits, WORD mode: 2,097,152 words by 16 bits).

Contextual Info: DATA SHEET MOS INTEGRATED CIRCUIT µPD23C32000A 32M-BIT MASK-PROGRAMMABLE ROM 4M-WORD BY 8-BIT BYTE MODE /2M-WORD BY 16-BIT (WORD MODE) Description The µ PD23C32000A is a 33,554,432 bits mask-programmable ROM. The word organization is selectable (BYTE mode: 4,194,304 words by 8 bits, WORD mode: 2,097,152 words by 16 bits).

Contextual Info: DATA SHEET MOS INTEGRATED CIRCUIT µPD23C32040L 32M-BIT MASK-PROGRAMMABLE ROM 4M-WORD BY 8-BIT BYTE MODE /2M-WORD BY 16-BIT (WORD MODE) PAGE ACCESS MODE Description The µPD23C32040L is a 33,554,432 bits mask-programmable ROM. The word organization is selectable (BYTE

442000L-C12X

Contextual Info: DATA SHEET MOS INTEGRATED CIRCUIT µPD442000L-X 2M-BIT CMOS STATIC RAM 256K-WORD BY 8-BIT EXTENDED TEMPERATURE OPERATION Description The µPD442000L-X is a high speed, low power, 2,097,152 bits 262,144 words by 8 bits CMOS static RAM. The µPD442000L-X has two chip enable pins (/CE1, CE2) to extend the capacity. And battery backup is available.

Contextual Info: PRELIMINARY DATA SHEET MOS INTEGRATED CIRCUIT 20:27 µPD23C24000 24M-BIT MASK-PROGRAMMABLE ROM 3M-WORD BY 8-BIT BYTE MODE 1.5M-WORD BY 16-BIT(WORD MODE) Description The µPD23C24000 is a 25,165,824 bits mask-programmable ROM. The word organization is selectable (BYTE

Contextual Info: MX29F002/002N 2M-BIT [256K x 8] CMOS FLASH MEMORY FEATURES • • • • • • • • 262,144x 8 only Fast access time: 55/70/90/120ns Low power consumption - 30mA maximum active current 5MHz - 1uA typical standby current Programming and erasing voltage 5V ± 10%

29F002T

Contextual Info: MX29F002/002N 2M-BIT [256K x 8] CMOS FLASH MEMORY FEATURES • • • • • • • • 262,144x 8 only Fast access time: 55/70/90/120ns Low power consumption - 30mA maximum active current 5MHz - 1uA typical standby current Programming and erasing voltage 5V ± 10%

Contextual Info: PRELIMINARY‡ 128Mb: x4, x8, x16 DDR333 SDRAM Addendum MT46V32M4 – 8 Meg x 4 x 4 banks MT46V16M8 – 4 Meg x 8 x 4 banks MT46V8M16 – 2 Meg x 16 x 4 banks DOUBLE DATA RATE DDR SDRAM For the latest data sheet revisions, please refer to the Micron Web site: www.micron.com/dramds

66 pin tsop package

Abstract: 256mb ddr333 200 pin
Contextual Info: PREVIEW‡ 256Mb: x4, x8, x16 DDR333 SDRAM Addendum MT46V64M4 – 16 Meg x 4 x 4 banks MT46V32M8 – 8 Meg x 8 x 4 banks MT46V16M16 – 4 Meg x 16 x 4 banks DOUBLE DATA RATE DDR SDRAM For the latest data sheet revisions, please refer to the Micron Web site: www.micron.com/dramds

W29C020CP90N

Abstract: W29C020CP90Z
Contextual Info: W29C020C 256K x 8 CMOS FLASH MEMORY Table of Contents1. 2. 3. 4. 5. 6. 7. GENERAL DESCRIPTION . 3 FEATURES . 3

Contextual Info: MICRON SEMICONDUCTOR INC b3E D • b 111S 4 S OQD771E ORT ■ NRN ADVANCE M IC ü n Q N I sem ico nducto r.inc. MT48LC4M4R1 4 MEG X 4 SDRAM 3.3 VOLT, PULSED RAS, DUAL BANK, SELF REFRESH FEATURES • Fully synchronous; all signals excluding clock enable registered to positive edge of system clock

Contextual Info: DATA SHEET MOS INTEGRATED CIRCUIT µPD441000L-X 1M-BIT CMOS STATIC RAM 128K-WORD BY 8-BIT EXTENDED TEMPERATURE OPERATION Description The µPD441000L-X is a high speed, low power, 1,048,576 bits 131,072 words by 8 bits CMOS static RAM. The µPD441000L-X has two chip enable pins (/CE1, CE2) to extend the capacity.

ic-nc

Abstract: d23cxxxxx
Contextual Info: DATA SHEET MOS INTEGRATED CIRCUIT µPD23C16000W 16M-BIT MASK-PROGRAMMABLE ROM 2M-WORD BY 8-BIT BYTE MODE /1M-WORD BY 16-BIT (WORD MODE) Description The µPD23C16000W is a 16,777,216 bits mask-programmable ROM. The word organization is selectable (BYTE mode: 2,097,152 words by 8 bits, WORD mode: 1,048,576 words by 16 bits).

UPD23C8000XCZ

Abstract: UPD23C8000XCZ-XXX UPD23C8000X d23cxxxxx PD23C8000 UPD23C8000XGY-XXX-MKH UPD23C8000XGX-XXX UPD23C8000XGX UPD23C8000XG5XXX7JF
Contextual Info: DATA SHEET MOS INTEGRATED CIRCUIT µPD23C8000X 8M-BIT MASK-PROGRAMMABLE ROM 1M-WORD BY 8-BIT BYTE MODE /512K-WORD BY 16-BIT (WORD MODE) Description The µPD23C8000X is a 8, 388, 608 bits mask-programmable ROM. The word organization is selectable (BYTE mode: 1, 048, 576 words by 8 bits, WORD mode: 524, 288 words by 16 bits).

d23cxxxxx

Contextual Info: DATA SHEET MOS INTEGRATED CIRCUIT µPD23C16000LW 16M-BIT MASK-PROGRAMMABLE ROM 2M-WORD BY 8-BIT BYTE MODE /1M-WORD BY 16-BIT (WORD MODE) Description The µPD23C16000LW is a 16,777,216 bits mask-programmable ROM. The word organization is selectable (BYTE mode: 2,097,152 words by 8 bits, WORD mode: 1,048,576 words by 16 bits).

Contextual Info: DATA SHEET MOS INTEGRATED CIRCUIT µPD23C8000LX 8M-BIT MASK-PROGRAMMABLE ROM 1M-WORD BY 8-BIT BYTE MODE /512K-WORD BY 16-BIT (WORD MODE) Description The µPD23C8000LX is a 8,388,608 bits mask-programmable ROM. The word organization is selectable (BYTE mode: 1,048,576 words by 8 bits, WORD mode: 524,288 words by 16 bits).

ES29LV800EB-70TG

Abstract: es29lv800et-70tg ES29LV800ET-70WC ES29LV800 ES29LV800E ES29LV800ET-70TGI ES29LV800EB-70TGI ES29LV800ET70TG ES29LV800EB
Contextual Info: EE SS II Excel Semiconductor inc. ES29LV800E 8Mbit 1M x 8/512K x 16 CMOS 3.0 Volt-only, Boot Sector Flash Memory GENERAL FEATURES • Minimum 100,000 program/erase cycles per sector • 20 Year data retention at 125oC • Single power supply operation - 2.7V -3.6V for read, program and erase operations

MX29F022T

Contextual Info: MX29F022/022N 2M-BIT[256K x 8]CMOS FLASH MEMORY FEATURES • 262,144x 8 only • Fast access time: 55/70/90/120ns • Low power consumption • • • • • Status Reply • -30mA maximum active current -1uA typical standby current@5MHz Programming and erasing voltage 5V±10%