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    A70 8 PIN IC Search Results

    A70 8 PIN IC Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    74HC4053FT Toshiba Electronic Devices & Storage Corporation CMOS Logic IC, SPDT(1:2)/Analog Multiplexer, TSSOP16B, -40 to 125 degC Visit Toshiba Electronic Devices & Storage Corporation
    7UL2T125FK Toshiba Electronic Devices & Storage Corporation One-Gate Logic(L-MOS), Buffer, SOT-765 (US8), -40 to 85 degC Visit Toshiba Electronic Devices & Storage Corporation
    7UL2T126FK Toshiba Electronic Devices & Storage Corporation One-Gate Logic(L-MOS), Buffer, SOT-765 (US8), -40 to 85 degC Visit Toshiba Electronic Devices & Storage Corporation
    74HC4051FT Toshiba Electronic Devices & Storage Corporation CMOS Logic IC, SP8T(1:8)/Analog Multiplexer, TSSOP16B, -40 to 125 degC Visit Toshiba Electronic Devices & Storage Corporation
    7UL1G07FU Toshiba Electronic Devices & Storage Corporation One-Gate Logic(L-MOS), Non-Inverter Buffer (Open Drain), USV, -40 to 85 degC Visit Toshiba Electronic Devices & Storage Corporation

    A70 8 PIN IC Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: 512K x 32 FLASH MODULE PUMA 68F16006/A-70/90/12/15 Elm Road, West Chirton, NORTH SHIELDS, Tyne & Wear NE29 8SE, England Tel. +44 0 191 2930500 Fax. +44 (0) 191 2590997 Description The PUMA 68F16006 is a high density 16Mbit CMOS 5V Only FLASH memory module in a


    Original     		PDF 68F16006/A-70/90/12/15 68F16006 16Mbit 150ns. JED-STD-020. 200pcs 183OC 225OC 219OC

    IC MARKING A60

    Abstract: 7KD MARKING marking B44
    Text: b42752S 00421flb 3fi7 M N E C E MOS INTEGRATED CIRCUIT /¿PD42 S 16400 L, 42 S 17400 L 16 M B IT D Y N A M IC RA M 3 .3 V F A S T P A G E M O D E PRELIM IN ARY IDESCRIPTIO N The NEC u PD42S16400L and u PD42S17400L are 4 194 304 words by 4 b its dynamic CMOS RAM


    OCR Scan     		PDF b42752S 00421flb uPD42S16400L uPD42S17400L PD42S16400L PD42S17400L //PD42S16400L) b427525 004EbBL> 475mil) IC MARKING A60 7KD MARKING marking B44

    LA80P

    Abstract: marking 80L
    Text: b427525 0042407 Tbb « N E C E MOS INTEGRATED CIRCUIT ju P D 4 2 S 1 6 1 8 0 L , 4 2 S 1 7 1 8 0 L , 4 2 S 1 8 1 8 0 L 16 M BIT D Y N A M IC RAM 3 .3 V FAST PAGE M O DE & BYTE R E A D /W R IT E M O DE -PRELIMINARY-DESCRIPTION The NEC ^PD42S16180L, u PD42S17180L and n PD42S18170L are 1 048 576 words by 18 b its


    OCR Scan     		PDF b427525 uPD42S16180L uPD42S17180L uPD42S18170L 475mil) P32VF-100-475A P32VF-100-475A LA80P marking 80L

    PD42S

    Abstract: No abstract text available
    Text: b427525 GQ4HSbT TEI « N E C E MOS INTEGRATED CIRCUIT jtiP D 4 2 S 1 6 1 9 0 L , 4 2 S 1 7 1 9 0 L , 4 2 S 1 8 1 9 0 L 16 M B IT D Y N A M IC RA M 3 .3 V FA ST P A G E M O D E & B Y T E W R IT E M O D E P R E LIM IN A R Y -D E S C R IP T IO N The NEC n PD42S16190L. ^ PD42S17190L and // PD42S18190L a re 1 048 576 words by 18 b i t s


    OCR Scan     		PDF b427525 uPD42S16190L uPD42S17190L uPD42S18190L b427525 0042bE 475mil) P32VF-100-475A P32VF-100-475A PD42S

    Untitled

    Abstract: No abstract text available
    Text: FLASH MEMORY 8 M 1M x 8/512 K x 16 BIT CMOS MBM29 DL800TA-70 - /M B M29 DL800BA-70/-90 -12 90/-1 2 • FEATURES • Single 3.0 V read, program, and erase Minimizes system level power requirements • Sim ultaneous operations Read-while-Erase or Read-while-Program


    OCR Scan     		PDF MBM29 DL800TA-70 DL800BA-70/-90 MBM29LV800TA/BA) 48-pin 48-ball 48030S OOTA-70/-90/-12/M L800B

    Untitled

    Abstract: No abstract text available
    Text: 128K x 32 FLASH MODULE mosaic semiconductor, inc. PUMA 68F4006/A-70/90/15 11403 W est Bernado Court, Suite 100, San Diego, CA 92127. Tel No: 619 674 2233, Issue 4.2 : November 1998 Fax No: (619) 674 2230 Description The PUMA 68F4006 is a 4Mbit CMOS 5V Only


    OCR Scan     		PDF 68F4006/A-70/90/15 68F4006 120ns. 24hrs 120secs 120-180secs 10-40secs

    Untitled

    Abstract: No abstract text available
    Text: FUJITSU SEMICONDUCTOR DATA SHEET DS05-20860-3E FLASH MEMORY B lB 8 M 1 M X 8 /5 1 2 K X 1 6 B IT MBM29DL300TA-?om-i!/MBM29DL800BA-70/-90/-12


    OCR Scan     		PDF DS05-20860-3E MBM29DL300TA- /MBM29DL800BA-70/-90/-12 MBM29LV800TA/BA) 48-pin BenL800B BGA-48P-M12) B480012S-2C-2

    29DL800TA

    Abstract: 29DL800BA 29dl800b fujitsu 29dl800 29DL800BA -90
    Text: FLASH MEMORY 8M 1M x 8/512K x 16 BIT CMOS M BM29 DL800TA-70/-90/-12/M BM29 DL800BA-70/-90/-12 • FEATURES • Single 3.0 V read, program, and erase Minimizes system level power requirements • Simultaneous operations Read-while-Erase or Read-while-Program


    OCR Scan     		PDF 8/512K DL800TA-70/-90/-12/M DL800BA-70/-90/-12 MBM29LV800TA/BA) 48-pin 48-ball F9811 29DL800TA 29DL800BA 29dl800b fujitsu 29dl800 29DL800BA -90

    Untitled

    Abstract: No abstract text available
    Text: November 1990 Edition 3.0 FUJITSU DATA SHEET : MB81C1001A-60/-70/-80/-10 CMOS 1,048,576 BIT NIBBLE MODE DYNAMIC RAM CMOS 1M x 1 Bit Nibble Mode DRAM The Fujitsu M B81C 1001A is a CM OS, fully decoded dynam ic RAM organized as 1,048,576 w ords x 1 bit. The M B81C 1001A has been designed fo r mainfram e


    OCR Scan     		PDF MB81C1001A-60/-70/-80/-10 MB81C1001A DIP-18P-M04 MB81C1A-80 MB81C1001A-10 24-LEAD FPT-24P-M04) F24020S-2C MB81C1001A-60

    PROTOCOL abs bosch

    Abstract: Bosch abs AD41 Bosch microcontroller PCA82C250 MSM9225 QFP44-P-910-0 MSM9225G bosch D738
    Text: O K I Sem iconductor Version 1.00, August 1998 Preliminary Short Spec MSM9225_ Autom otive CAN Controller, 1M bps GENERAL DESCRIPTIO N M SM 9225 is a high-speed autom otive LAN controller LSI conform ing to the C A N standard V 2.0b as developed b y Bosch, G erm any. Em ploying tw o-w ire serial data com m unication w ith N RZ non-return


    OCR Scan     		PDF MSM9225_ MSM9225 SM9225 470ki2 PCA82C250 PROTOCOL abs bosch Bosch abs AD41 Bosch microcontroller PCA82C250 QFP44-P-910-0 MSM9225G bosch D738

    Untitled

    Abstract: No abstract text available
    Text: PRELIMINARY DATA SHEET_ MOS INTEGRATED CIRCUIT MC-45V8AD64S 8M-WORD BY 64-BIT VIRTUAL CHANNEL SYNCHRONOUS DYNAMIC RAM MODULE SO DIMM Description The MC-45V8AD64S is a 8,388,608 words by 64 bits virtual channel synchronous dynamic RAM module (small


    OCR Scan     		PDF MC-45V8AD64S 64-BIT MC-45V8AD64S uPD4565161 sup64-71 64M-BIT

    a70 8 pin ic

    Abstract: No abstract text available
    Text: PRELIMINARY DATA SHEET_ MOS INTEGRATED CIRCUIT MC-45V8AB64S 8M-WORD BY 64-BIT VIRTUAL CHANNEL SYNCHRONOUS DYNAMIC RAM MODULE SO DIMM Description The MC-45V8AB64S is a 8,388,608 words by 64 bits virtual channel synchronous dynamic RAM module (small


    OCR Scan     		PDF MC-45V8AB64S 64-BIT MC-45V8AB64S uPD4565821 sup71 64M-BIT 144-PIN a70 8 pin ic

    Untitled

    Abstract: No abstract text available
    Text: L Q G IQ L F 3347 High-Speed Image Filter with Coefficient RAM D E V IC E S IN C O R P O R A T E D TI0N_ □ 80 M H z D ata In p u t an d C o m p u ta­ tion Rate □ Four 12 x 12-bit M ultipliers w ith Individual D ata and Coefficient Inputs □ Four 256 x 12-bit Coefficient Banks


    OCR Scan     		PDF 12-bit 32-bit 16-bit 120-pin LF3347 LF3347GC25

    29lv800ta

    Abstract: 29DL800BA
    Text: FLASH MEMORY CMOS 8 M 1M x 8/512 K x 16 BIT M B M29 D L800TA-70/-90/-12 /M B M29 D L800B A-70/-90/-12 • FEATURES • Single 3.0 V read, program, and erase Minimizes system level power requirements • Simultaneous operations Read-while-Erase or Read-while-Program


    OCR Scan     		PDF L800TA-70/-90/-12 L800B MBM29LV800TA/BA) 48-pin 48-ball D-63303 F9904 29lv800ta 29DL800BA

    Untitled

    Abstract: No abstract text available
    Text: O K I Semiconductor MSM5116160A_ 1,048,576-Word x 16-Bit DYNAMIC RAM : FAST PAGE MODE TYPE D ESCRIPTIO N The MSM5116160A is a 1,048,576-word x 16-bit dynam ic RAM fabricated in OKI's CMOS silicon gate technology. The MSM5116160A achieves high integration, high-speed operation, and low-power


    OCR Scan     		PDF MSM5116160A_ 576-Word 16-Bit MSM5116160A 42-pin 50/44-pin

    MSM51V18165A

    Abstract: MSM51V18165
    Text: O K I Semiconductor M SM 51V18165A_ 1,048,576-Ward x 16-Blt DYNAMIC RAM : FAST PAGE MODE TYPE WITH EDO DESCRIPTION The MSM51V18165A is a 1,048¿76-w ord x 16-bit dynam ic RAM fabricated in O KI’s CM OS silicon gate technology. The M SM 51V18165A achieves high integration, high-speed operation, and lowpower consumption due to quadruple polysilicon double metal CM OS. The M SM 51V18165A is


    OCR Scan     		PDF MSM51V18165A 576-Word 16-Btt MSM51V18165A 16-bit 42-pin /44-pin MSM51V18165

    Untitled

    Abstract: No abstract text available
    Text: P R E LIM IN A R Y DATA SH EE T_ MOS INTEGRATED CIRCUIT MC-45V8AB641 8M-WORD BY 64-BIT VIRTUAL CHANNEL SYNCHRONOUS DYNAMIC RAM MODULE UNBUFFERED TYPE Description The MC-45V8AB641 is a 8,388,608 words by 64 bits virtual channel synchronous dynamic RAM module on which 8


    OCR Scan     		PDF MC-45V8AB641 64-BIT MC-45V8AB641 uPD4565821 64M-BIT MC-45V8AB641F

    MSM51V18165A

    Abstract: 00E0343
    Text: • O K I S em iconductor MSM 5 1 V1 8 1 6 5 A 1,048,576-Word x 16-Bit DYNAMIC RAM : FAST PAGE MODE TYPE WITH EDO DESCRIPTION The MSM51V18165A is a 1,048,576-word x 16-bit dynamic RAM fabricated in OKI's CMOS silicon gate technology. The MSM51V18165A achieves high integration high-speed operation, an d lowpow er consumption due to quadruple polysilicon double metal CMOS. The MSM51V18166A is


    OCR Scan     		PDF MSM51V18165A 576-Word 16-Bit MSM51VI8165A MSM51V18165A 42-pin 50/44-pin 00E0343

    m51164

    Abstract: MSM5116405A M5116405
    Text: Um O K I Semiconductor MSM5 1 16405 A 4,194,304-Word x 4-Bit DYN A M IC RAM : FAST PAGE M O D E TYPE W ITH EDO DESCRIPTION The MSM5116405A is a 4,194,304-word x 4-bit dynamic RAM fabricated in OKI's CMOS silicon gate technology. The MSM5116405A achieves high integration, high-speed operation, and low-power


    OCR Scan     		PDF MSM5116405A_ 304-Word MSM5116405A 26/24-pin cycles/64 m51164 M5116405

    D016

    Abstract: MSM51V16165A
    Text: O K I Sem iconductor MSM5 1 V16165A 1,048,576-Word x 16-Bit DYNAMIC RAM : FAST PAGE MODE TYPE WITH EDO DESCRIPTION The MSM51V16165A is a 1,048,576-word x 16-bit dynamic RAM fabricated in OKI's CMOS silicon gate technology. The MSM51V16165A achieves high integration, high-speed operation, and lowpower consumption due to quadruple polysilicon double metal CMOS. The MSM51V16165A is


    OCR Scan     		PDF MSM51V16165A 576-Word 16-Bit MSM51V16165A 42-pin 50/44-pin D016

    MSM51V17805A

    Abstract: No abstract text available
    Text: O K I Semiconductor M S M 5 1 V 1 7 8 5 A 2,097,152-Word x 8-Bit DYNAMIC RAM : FAST PAGE MODE TYPE WITH EDO DESCRIPTION The MSM51V17805A is a 2,097,152-word x 8-bit dynam ic R A M fabricated in O K I's C M O S silicon gate technology. The MSM51V17805A achieves high integration, high-speed operation, and lowpow er consum ption due to quadruple polysilicon double m etal C M O S. The MSM51V17805A is


    OCR Scan     		PDF MSM51V17805A 152-Word MSM51V17805A 28-pin cycles/32

    29F800BA

    Abstract: No abstract text available
    Text: FLASH MEMORY CMOS 8 M 1M x 8/512 K x 16 BIT MBM29F800TA-70 WM BM29F800B A-70-go • FEATURES • Single 5.0 V read, write, and erase Minimizes system level power requirements • Compatible with JEDEC-standard commands Uses same software commands as E2PROMs


    OCR Scan     		PDF MBM29F800TA-70 BM29F800B 48-pin 44-pin F48030S MBM29 F800TA-70 -90/M F800BA-70 29F800BA

    Untitled

    Abstract: No abstract text available
    Text: SEC • •■ '*i pPD421x800/L, 42S1X800/L X = 6, 7 2,097,152 X 8-Bit Dynamic CMOS RAM NEC Electronics Inc. P relim inary Information S eptem ber 1992 Description The devices listed below are fast-page dynam ic RAMs organized as 2M words by 8 bits and designed to


    OCR Scan     		PDF pPD421x800/L, 42S1X800/L 42S16800 42S17800

    MSM51V16400A

    Abstract: No abstract text available
    Text: O K I Semiconductor MSM51 V16400 A_ 4,194,304-Word x 4-Bit DYNAMIC R AM : FA ST P A G E M O D E T Y P E DESCRIPTION The MSM51V16400A is a 4494,304-w ord x 4-bit dynam ic RAM fabricated in OKI's CMOS silicon gate technology. The MSM51V16400A achieves high integration, high-speed operation, a n d lowpo w er consum ption d u e to q u ad ru p le polysilicon double m etal CMOS. The MSM51V16400A is


    OCR Scan     		PDF MSM51V16400A_ 304-Word MSM51V16400A 26/24-pin 4096cycles/64ms