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    A7000 Search Results

    A7000 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    SIT5347AC-FP-33VTA70.000000 SiTime 60 to 220 MHz, ±0.1 to ±0.25 ppm precision Super-TCXO Datasheet
    SIT5347AI-FQ-33N0A70.00000 SiTime 60 to 220 MHz, ±0.1 to ±0.25 ppm precision Super-TCXO Datasheet
    SIT5347AC-FQ-33VTA70.000000 SiTime 60 to 220 MHz, ±0.1 to ±0.25 ppm precision Super-TCXO Datasheet
    SIT8944BI-18-18SA70.000000 SiTime 1 to 110 MHz, Extended Temperature (-55 °C to 125 °C) Oscillator Datasheet
    SIT5347AI-FQ-30VTA70.000000 SiTime 60 to 220 MHz, ±0.1 to ±0.25 ppm precision Super-TCXO Datasheet
    SF Impression Pixel

    A7000 Price and Stock

    Century Spring Corp TA-7000SCS

    LO= 0.36, SO= 0.125, W= 0.029
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey TA-7000SCS Box 1,104 1
    • 1 $3.93
    • 10 $3.93
    • 100 $3.7306
    • 1000 $2.94526
    • 10000 $2.94526
    Buy Now

    Mercury Electronic Ind Co Ltd QMQF326D25-2.0A-70.000

    XTAL OSC TCXO 70.0000MHZ LVDS
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey QMQF326D25-2.0A-70.000 250 3
    • 1 -
    • 10 $27.75
    • 100 $15.25
    • 1000 $13.75
    • 10000 $13.75
    Buy Now

    Mercury Electronic Ind Co Ltd QMQF326T33-2.0A-70.000

    XTAL OSC TCXO 70.0000MHZ CMOS
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey QMQF326T33-2.0A-70.000 250 3
    • 1 -
    • 10 $27.75
    • 100 $15.25
    • 1000 $13.75
    • 10000 $13.75
    Buy Now

    Mercury Electronic Ind Co Ltd QMQF574T25-2.0A-70.000

    XTAL OSC TCXO 70.0000MHZ CMOS
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey QMQF574T25-2.0A-70.000 250 3
    • 1 -
    • 10 $29.75
    • 100 $17.25
    • 1000 $15.55
    • 10000 $15.55
    Buy Now

    Mercury Electronic Ind Co Ltd QMQF576D33-2.0A-70.000

    XTAL OSC TCXO 70.0000MHZ LVDS
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey QMQF576D33-2.0A-70.000 250 3
    • 1 -
    • 10 $29.75
    • 100 $17.25
    • 1000 $15.55
    • 10000 $15.55
    Buy Now

    A7000 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    SA6954

    Abstract: S29WS064N S29WS128N S29WS256N WS128N FFC00
    Text: S29WSxxxN MirrorBit Flash Family S29WS256N, S29WS128N, S29WS064N 256/128/64 Megabit 16/8/4 M x 16-Bit CMOS 1.8 Volt-only Simultaneous Read/Write, Burst Mode Flash Memory PRELIMINARY Distinctive Characteristics Architectural Advantages „ Single 1.8 volt read, program and erase (1.70 to


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    PDF S29WSxxxN S29WS256N, S29WS128N, S29WS064N 16-Bit) SA6954 S29WS064N S29WS128N S29WS256N WS128N FFC00

    STR 6267

    Abstract: str f 6267 str 6267 f str 5707 STR F 9208 L datasheet str 5707 STR D 5707 str 6853 F918 f4148
    Text: DISTRIBUTORS July 1997 ALABAMA Hamilton Hallmark 4890 University Sq., #1 Huntsville, AL 35805 P#205/837-8700 F#205/830-2565 Marshall 3313 Memorial Pkwy So., 150 Huntsville, AL 35803 P#205/881-9235 F#205/881-1490 Pioneer 4835 University Square Huntsville, AL 35816


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    PDF 51itzerland 3-15F, Omraniye-81257-Omraniye STR 6267 str f 6267 str 6267 f str 5707 STR F 9208 L datasheet str 5707 STR D 5707 str 6853 F918 f4148

    C000H-DFFFH

    Abstract: 24Blocks FB0000h-FBFFFFh 9F0000h-9FFFFFh C10000h-C1FFFFh FF4000h-FF5FFFh 8a0000h8affffh
    Text: ADVANCED INFORMATION MX29LW128T/B/U/D 128M-BIT [16M x 8 / 8M x 16] SINGLE VOLTAGE 3V ONLY PAGE MODE FLASH MEMORY FEATURES GENERAL • 8M word x 16 Bit /16M Byte x 8 Bit switchable Power Supply Voltage - VCC=2.7V to 3.6V for read, erase and program operation


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    PDF MX29LW128T/B/U/D 128M-BIT JAN/27/2003 MAR/28/2003 MAY/16/2003 MAY/29/2003 C000H-DFFFH 24Blocks FB0000h-FBFFFFh 9F0000h-9FFFFFh C10000h-C1FFFFh FF4000h-FF5FFFh 8a0000h8affffh

    PROCESSOR

    Abstract: mp 9141 es dc-dc mp 9141 es CX5520 GXm-180B 2.9V 70C power module si 3101 schematic diagram Geode GXm Processor tag 8514 30054 gxm-266b
    Text: Geode GXm Processor Integrated x86 Solution with MMX Support General Description The National Semiconductor Geode™ GXm processor is an advanced 32-bit x86 compatible processor offering high performance, fully accelerated 2D graphics, a 64-bit synchronous DRAM controller and a PCI bus controller,


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    PDF 32-bit 64-bit PROCESSOR mp 9141 es dc-dc mp 9141 es CX5520 GXm-180B 2.9V 70C power module si 3101 schematic diagram Geode GXm Processor tag 8514 30054 gxm-266b

    JESD97

    Abstract: M29DW128F TSOP56 6C80
    Text: M29DW128F 128 Mbit 16Mb x8 or 8Mb x16, Multiple Bank, Page, Boot Block 3V supply Flash memory Feature summary • Supply voltage – VCC = 2.7V to 3.6V for Program, Erase and Read – VPP =12V for Fast Program (optional) ■ Asynchronous Random/Page Read


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    PDF M29DW128F TSOP56 32-Word 16Mbit 48Mbit 16Mbit TBGA64 JESD97 M29DW128F TSOP56 6C80

    SA452

    Abstract: SA336 SA424 120R S29GL512N SA487 EE8000 a78000a7ffff c58000c5ffff SA4871
    Text: Am29LV2562M Data Sheet RETIRED PRODUCT This product has been retired and is not available for designs. For new and current designs, S29GL512N supersedes Am29LV2562M and is the factory-recommended migration path. Please refer to the S29GL512N Data Sheet for specifications and ordering information. Availability of this


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    PDF Am29LV2562M S29GL512N S29GL512N SA452 SA336 SA424 120R SA487 EE8000 a78000a7ffff c58000c5ffff SA4871

    S29WS256N

    Abstract: S71WS512NE0BFWZZ
    Text: S71WS512NE0BFWZZ Stacked Multi-Chip Product MCP Flash Memory and pSRAM CMOS 1.8 Volt, Simultaneous Operation, Burst Mode Flash Memory and Pseudo-Static RAM ADVANCE INFORMATION DISTINCTIVE CHARACTERISTICS GENERAL DESCRIPTION MCP Features The S71WS512 Series is a product line of stacked Multi-Chip


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    PDF S71WS512NE0BFWZZ S71WS512 S29WS256N 54MHz 128Mb 96-ball S71WS512NE0BFWZZ S29WS256N

    M29W128FL

    Abstract: Memory Protection Devices M29W128FH JESD97 M29W128F TSOP56
    Text: M29W128FH M29W128FL 128 Mbit 8Mb x 16 or 16Mb x 8, Page, Uniform Block 3V Supply Flash Memory Feature summary • Supply voltage – VCC = 2.7 to 3.6V for Program, Erase and Read – VPP =12V for Fast Program (optional) ■ Asynchronous Random/Page Read


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    PDF M29W128FH M29W128FL Words/16 TSOP56 32-Word 64-Bytes) M29W128FL Memory Protection Devices M29W128FH JESD97 M29W128F TSOP56

    FL128P

    Abstract: SPANSION FL128P
    Text: S25FL128P 128 Megabit CMOS 3.0 Volt Flash Memory with 104-MHz SPI Serial Peripheral Interface Bus Data Sheet S25FL128P Cover Sheet Notice to Readers: This document states the current technical specifications regarding the Spansion product(s) described herein. Each product described herein may be designated as Advance Information,


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    PDF S25FL128P 104-MHz S25FL128P FL128P SPANSION FL128P

    samsung electronics ba41

    Abstract: BA175
    Text: Preliminary FLASH MEMORY K8C56 57 15ET(B)M 256Mb M-die MLC NOR Specification INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE. NOTHING IN THIS DOCUMENT SHALL BE CONSTRUED AS GRANTING ANY LICENSE,


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    PDF K8C56 256Mb A0-A23 000000FH 000001FH 000002FH 0000000H samsung electronics ba41 BA175

    BA379

    Abstract: BA377 BA339 BA438 BA429 BA416 ba-302 BA512 BA308 ba324
    Text: K8A5615ET B A NOR FLASH MEMORY Document Title 256M Bit (16M x16) Synchronous Burst , Multi Bank NOR Flash Memory Revision History Revision No. History Draft Date Remark 0.0 Advanced March 15, 2004 Advance 0.1 Revision - Change the speed code 7B : 90ns @54MHz -> 7B : 88.5ns @54MHz


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    PDF K8A5615ET 54MHz 22ECH 22FCH 22EDH 22FDH K8A56156ET 70ns--- BA379 BA377 BA339 BA438 BA429 BA416 ba-302 BA512 BA308 ba324

    NS064N

    Abstract: S29NS128N S29NS256N VDC048 S29NS256
    Text: S29NSxxxN MirrorBitTM Flash Family S29NS256N, S29NS128N, S29NS064N 256/128/64 Megabit 16/8/4M x 16-bit , CMOS 1.8 Volt-only Simultaneous Read/Write, Multiplexed, Burst Mode Flash Memory ADVANCE INFORMATION Distinctive Characteristics „ Single 1.8 volt read, program and erase (1.70


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    PDF S29NSxxxN S29NS256N, S29NS128N, S29NS064N 16/8/4M 16-bit) 32-Word S29NS256/128/64N NS064N S29NS128N S29NS256N VDC048 S29NS256

    JESD97

    Abstract: M29DW128F TSOP56 esn 234 D2578 5PWA
    Text: M29DW128F 128 Mbit 16Mb x8 or 8Mb x16, Multiple Bank, Page, Boot Block 3V supply Flash memory Features summary • Supply Voltage – VCC = 2.7V to 3.6V for Program, Erase and Read – VCCQ= 1.65V to 3.6V for Input/Output – VPP =12V for Fast Program (optional)


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    PDF M29DW128F TSOP56 32-Word TBGA64 16Mbit 48Mbit 16Mbit JESD97 M29DW128F TSOP56 esn 234 D2578 5PWA

    IS29GL256

    Abstract: No abstract text available
    Text: IS29GL256 256 Megabit 32768K x 8-bit / 16384K x 16-bit Flash Memory Page mode Flash Memory, CMOS 3.0 Volt-only FEATURES • Single power supply operation - Full voltage range: 2.7 to 3.6 volts read and write operations • High performance - Access times as fast as 90 ns


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    PDF IS29GL256 32768K 16384K 16-bit) 8-word/16-byte 32-word/64-byte 128-word/256-byte 8-word/16byte IS29GL256 IS29GL256-JTLE

    MX29GL256FLT2I-90Q

    Abstract: MX29GL256FHT MX29GL256 MX29GL256FHT2I-90Q MX29GL256F MX29GL256FL MX29GL256FH 29GL256 MX29GL256FLXFI-90Q PM1544
    Text: MX29GL256F MX29GL256F DATASHEET P/N:PM1544 REV. 0.02, OCT. 18, 2010 1 PRELIMINARY MX29GL256F SINGLE VOLTAGE 3V ONLY FLASH MEMORY FEATURES GENERAL FEATURES • Power Supply Operation - 2.7 to 3.6 volt for read, erase, and program operations - MX29GL256F H/L: VI/O=VCC=2.7V~3.6V, VI/O voltage must tight with VCC


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    PDF MX29GL256F PM1544 MX29GL256F 64KW/128KB 16-byte/8-word 64-byte/32-word 128-word 100mA MX29GL256FLT2I-90Q MX29GL256FHT MX29GL256 MX29GL256FHT2I-90Q MX29GL256FL MX29GL256FH 29GL256 MX29GL256FLXFI-90Q PM1544

    S25FL129

    Abstract: S25FL129P s25fl129p0 FL129P footprint WSON S25FL128P SA255 SCK FAB024 footprint WSON-8 reader sa223 FAC024
    Text: S25FL129P 128-Mbit CMOS 3.0 Volt Flash Memory with 104-MHz SPI Serial Peripheral Interface Multi I/O Bus Data Sheet S25FL129P Cover Sheet Notice to Readers: This document states the current technical specifications regarding the Spansion product(s) described herein. Each product described herein may be designated as Advance Information,


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    PDF S25FL129P 128-Mbit 104-MHz S25FL129P S25FL129 s25fl129p0 FL129P footprint WSON S25FL128P SA255 SCK FAB024 footprint WSON-8 reader sa223 FAC024

    asme SA388

    Abstract: gl128m A2113 S29GL256 E78000 S29GL128N TSOP56 S29GL128N sa32sa35 S29GLxxxM BGA-63
    Text: S29GL-M MirrorBitTM フラッシュファミリ S29GL256MS29GL128MS29GL064MS29GL032M 256M ビット,128M ビット,64M ビット,および 32M ビット, 3.0V 単一電源,ページモードフラッシュメモリ 0.23µm MirrorBit プロセステクノロジ


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    PDF S29GL-M S29GL256MS29GL128MS29GL064MS29GL032M S29GL128MS29GL128N S29GL256MS29GL256N S29GLxxxN 00-B-5 S29GL032M LAA064 asme SA388 gl128m A2113 S29GL256 E78000 S29GL128N TSOP56 S29GL128N sa32sa35 S29GLxxxM BGA-63

    120R

    Abstract: C8800
    Text: Am29LV2562M Data Sheet July 2003 The following document specifies Spansion memory products that are now offered by both Advanced Micro Devices and Fujitsu. Although the document is marked with the name of the company that originally developed the specification, these products will be offered to customers of both AMD and


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    PDF Am29LV2562M 120R C8800

    DQ141

    Abstract: No abstract text available
    Text: M29DW128F 128 Mbit 16Mb x8 or 8Mb x16, Multiple Bank, Page, Boot Block 3V Supply, Flash Memory PRELIMINARY DATA Features summary • Supply Voltage – VCC = 2.7V to 3.6V for Program, Erase and Read – VCCQ= 1.65V to 3.6V for Input/Output – VPP =12V for Fast Program (optional)


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    PDF M29DW128F 32-Word 16Mbit 48Mbit 16Mbit DQ141

    l256mh113

    Abstract: L256ML123R
    Text: Am29LV256M Data Sheet September 2003 The following document specifies Spansion memory products that are now offered by both Advanced Micro Devices and Fujitsu. Although the document is marked with the name of the company that originally developed the specification, these products will be offered to customers of both AMD and


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    PDF Am29LV256M l256mh113 L256ML123R

    Untitled

    Abstract: No abstract text available
    Text: Geode GX1 Processor Series Low Power Integrated x86 Solution General Description The National Semiconductor Geode™ GX1 processor series is a line of integrated processors specifically designed to power information appliances for entertainment, education, and business. Serving the needs of consumers and business professionals alike, it’s the perfect


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    PDF

    06SEC

    Abstract: BA213 16N10 BA167 BA184 15ET BA244 BA242 K8F5615ETM samsung nor flash
    Text: K8F56 57 15ET(B)M NOR FLASH MEMORY 256Mb M-die MLC NOR Specification INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE. NOTHING IN THIS DOCUMENT SHALL BE CONSTRUED AS GRANTING ANY LICENSE, EXPRESS OR IMPLIED, BY ESTOPPEL OR OTHERWISE,


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    PDF K8F56 256Mb 070000h-07FFFFh 060000h-06FFFFh 050000h-05FFFFh 040000h-04FFFFh 030000h-03FFFFh 020000h-02FFFFh 010000h-01FFFFh 00C000h-00FFFFh 06SEC BA213 16N10 BA167 BA184 15ET BA244 BA242 K8F5615ETM samsung nor flash

    Untitled

    Abstract: No abstract text available
    Text: Am29LV128MH/L Data Sheet July 2003 The following document specifies Spansion memory products that are now offered by both Advanced Micro Devices and Fujitsu. Although the document is marked with the name of the company that originally developed the specification, these products will be offered to customers of both AMD and


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    PDF Am29LV128MH/L

    hec0470-01-230

    Abstract: OT75 825A4620G HEC0470 9v connector dc9v LR38236
    Text: REV. S t a t u s AC -D C UL/CSA ADAPTOR DC 9V 1200mA REVISION 02/2 1/92 YN A. Electrical specifications 1. Input voltage: AC 120V ± 1 0 % 60 Hz ±0.5 Hz 2. Output voltage and current: DC 9V at 1200mA REVISION A Mn 100% Load TEMECULA 108 7.1 VDC MIN WAS CARSON


    OCR Scan
    PDF 1200mA 120mA 1200mA condensation0471 825A4620G hec0470-01-230 OT75 825A4620G HEC0470 9v connector dc9v LR38236