A81 DC Search Results
A81 DC Result Highlights (5)
Part | ECAD Model | Manufacturer | Description | Download | Buy |
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MGN1D050603MC-R7 | Murata Manufacturing Co Ltd | DC-DC 1W SM 5-6/-3V GAN |
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MGN1D120603MC-R7 | Murata Manufacturing Co Ltd | DC-DC 1W SM 12-6/-3V GAN |
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MGN1S1208MC-R7 | Murata Manufacturing Co Ltd | DC-DC 1W SM 12-8V GAN |
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MGN1S1212MC-R7 | Murata Manufacturing Co Ltd | DC-DC 1W SM 12-12V GAN |
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MGN1S0508MC-R7 | Murata Manufacturing Co Ltd | DC-DC 1W SM 5-8V GAN |
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A81 DC Price and Stock
Texas Instruments OPA810IDCKRHigh Speed Operational Amplifiers Single Channel High Performance 27 V |
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Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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OPA810IDCKR | 11,959 |
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OMRON Corporation H3CR-A8AC100-240/DC100-125Timers |
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H3CR-A8AC100-240/DC100-125 | 30 |
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Carling Technologies VLB1HWDC-A8100-0Rocker Switches VLB1HWDC-A8100-0 |
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VLB1HWDC-A8100-0 |
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Texas Instruments OPA810IDCKRG4High Speed Operational Amplifiers 27V, 140MHz, single channel, high performance, RRIO FET input op amp |
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Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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OPA810IDCKRG4 |
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A81 DC Datasheets Context Search
Catalog Datasheet | Type | Document Tags | |
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Contextual Info: WJ-A81 / SMA81 20 to 250 MHz TO-8 CASCADABLE AMPLIFIER ♦ ♦ ♦ ♦ ♦ AVAILABLE IN SURFACE MOUNT HIGH REVERSE ISOLATION: >30 dB TYP. HIGH GAIN: 24 dB (TYP.) HIGH LEVEL OUTPUT: +17 dBm (TYP.) LOW NOISE: 3.5 dB (TYP.) Outline Drawings A81 0.450 n (11-41)U |
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WJ-A81 SMA81 Inpu16 | |
A81-1
Abstract: CA81-1 SMA81-1
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A81-1 SMA81-1 MIL-STD-883 CA81-1 SMA81-1 | |
SMA81-1Contextual Info: Cascadable Amplifier 20 to 250 MHz A81-1 / SMA81-1 V3 Features • • • • Product Image High Reverse Isolation : >30 dBm TYP. Low Noise: 2.4 dB (TYP.) High Gain: 25 dB (TYP.) High Level Output: +13.5 dBm (TYP.) Description The A81-1 RF amplifier is a discrete hybrid design, which |
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A81-1 SMA81-1 MIL-STD-883 SMA81-1 | |
Contextual Info: * + , (-./ 0 1- 234 0 8 9 5 : 5 ; 5 : * ? 9 * < 5 : "<( < $ ; B 8 * 9 9 9 8 < 9 = > 9 9 F 9) 9 $* 9 A81 H ! < * 9) $ 5 5 5 ? *9 @ = ? *9 : + < 5 " << * 9 $* * (-.CDE 9 1FG8 ( 5 , 1-67 0 ! <: 9 * 5 A @ : (-.CDE 8 9 1FG8 9 @ ; * : 9 A81 H ! A G < ? * A G |
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Contextual Info: WJ-A81-2 / SMA81-2 20 to 500 MHz TO-8 CASCADABLE AMPLIFIER ♦ ♦ ♦ ♦ ♦ AVAILABLE IN SURFACE MOUNT HIGH OUTPUT POWER: +15.0 dBm TYP. HIGH EFFICIENCY: 29 mA @ + 15 VDC (TYP.) LOW NOISE 3.6 dB (TYP.) HIGH GAIN: >22.0 dB (TYP.) Outline Drawings A81-2 |
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WJ-A81-2 SMA81-2 A81-2 50-ohm | |
WJ-CA81-1
Abstract: WJ-A81-1 612025 ja81 TRANSISTOR 2N 4401
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A81-1 /SMA81-1 A81-1 50-ohm 17TC/W 1-800-WJ1-4401 WJ-CA81-1 WJ-A81-1 612025 ja81 TRANSISTOR 2N 4401 | |
CA81
Abstract: SMA81 A81 DC
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SMA81 MIL-STD-883 CA81 SMA81 A81 DC | |
A81 DCContextual Info: Cascadable Amplifier 20 to 250 MHz A81/ SMA81 V3 Features • • • • Product Image HIGH REVERSE ISOLATION: >30 dB TYP. HIGH GAIN: 26 dB (TYP.) HIGH LEVEL OUTPUT: +17 dBm (TYP.) LOW NOISE: 2.6 dB (TYP.) Description The A81 RF amplifier is a discrete hybrid design, which uses |
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SMA81 MIL-STD-883 SMA81rized A81 DC | |
Transistor BC 227Contextual Info: u jU A81-2/SMA81-2 20 to 500 MHz TO-8 CASCADABLE AMPLIFIER ♦ ♦ ♦ ♦ ♦ AVAILABLE IN SURFACE MOUNT HIGH OUTPUT POWER: +15.0 dBm TYP. HIGH EFFICIENCY: 29 mA @ + 15 VDC (TYP.) LOW NOISE 2.9 dB (TYP.) HIGH GAIN: >24.5 dB (TYP.) Outline Drawings A81-2 |
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A81-2/SMA81-2 A81-2 1-800-WJ1-4401 Transistor BC 227 | |
A81-3
Abstract: CA81-3 SMA81-3 A81 DC
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A81-3 SMA81-3 MIL-STD-883 CA81-3 SMA81-3 A81 DC | |
A81-3
Abstract: CA81-3 SMA81-3
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A81-3/ SMA81-3 A81-3 MIL-STD-883 CA81-3 SMA81-3 | |
Contextual Info: Cascadable Amplifier 20 to 500 MHz A81-2/ SMA81-2 V3 Features • • • • Product Image HIGH OUTPUT POWER: +15.0 dBm TYP. HIGH EFFICIENCY: 29 mA @ +15 Vdc (TYP.) LOW NOISE 2.9 dB (TYP.) HIGH GAIN: >24.5 dB (TYP.) Description The A81-2 RF amplifier is a discrete hybrid design, which uses |
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A81-2/ SMA81-2 A81-2 MIL-STD-883 | |
A81-2
Abstract: CA81-2 SMA81-2
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A81-2 SMA81-2 MIL-STD-883 CA81-2 SMA81-2 | |
Q69-X152
Abstract: a81smd A80-A600X Q69-X238 Q69-X138 a250 a81s A80-C90X EPCOS 600 04 O EPCOS 90 05 0
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RAB0177-2 RAB0166-L RAB0004-Q A80-C90X Q69-X141 A80-A230X Q69-X224 A80-A250X Q69-X292 A80-A350X Q69-X152 a81smd A80-A600X Q69-X238 Q69-X138 a250 a81s A80-C90X EPCOS 600 04 O EPCOS 90 05 0 | |
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a600
Abstract: A81-A600XG B88069X2990T502
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A81-A600XG B88069X2990T502 57845/VDE0845 a600 A81-A600XG B88069X2990T502 | |
IEC 60068-1
Abstract: A81-A150X B88069X2840S102
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A81-A150X B88069X2840S102 57845/VDE0845 IEC 60068-1 A81-A150X B88069X2840S102 | |
Contextual Info: Surge Arrester 2-Electrode-Arrester A81-A600XG Ordering code: B88069X2990T502 DC spark-over voltage 1 2) 600 ± 20 V % < 1100 < 950 V V < 1400 < 1100 V V Nominal impulse discharge current wave 8/20 µs) Single impulse discharge current (wave 8/20 µs) 20 |
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A81-A600XG B88069X2990T502 57845/VDE0845 | |
EPCOS 230 06 O
Abstract: A81-A230X B88069X2250S102
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A81-A230X B88069X2250S102 57845/VDE0845 EPCOS 230 06 O A81-A230X B88069X2250S102 | |
EPCOS 600 06 O
Abstract: IEC-60286-3 transistor smd marking KA smd A81 smd marking blue iec 60286 SMD MARKING CODE SMD MARKING CODE transistor smd transistor AB Datasheet A81-C90XSMD
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A81-C90XSMD B88069X1370T352 EPCOS 600 06 O IEC-60286-3 transistor smd marking KA smd A81 smd marking blue iec 60286 SMD MARKING CODE SMD MARKING CODE transistor smd transistor AB Datasheet A81-C90XSMD | |
A81-C90X
Abstract: B88069X1380S102
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A81-C90X B88069X1380S102 57845/VDE0845 A81-C90X B88069X1380S102 | |
EPCOS 230 05 O
Abstract: A81-A230X B88069X2250S102
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A81-A230X B88069X2250S102 57845/VDE0845 EPCOS 230 05 O A81-A230X B88069X2250S102 | |
A81-A800XP
Abstract: Arresters B88069X57
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A81-A800XP B88069X5701S102 A81-A800XP Arresters B88069X57 | |
Contextual Info: Surge arrester 2-electrode arrester Series/Type: Ordering code: A81-A600XG B88069X2990T502 Version/Date: Version: Issue 03 / 2009-11-12 6 Content of header bars 1 and 2 of data sheet will be automatically entered in headers and footers! Please fill in the |
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A81-A600XG B88069X2990T502 | |
Contextual Info: BAS19 BAS20 BAS21 SILICON PLANAR EPITAXIAL HIGH-SPEED DIODES Silicon planar epitaxial high-speed diodes PACKAGE OUTLINE DETAILS ALL DIMENSIONS IN mm Marking BAS19 = A8 BAS20 = A81 BAS21 = A82 _3.0_ 2.8 0.14 0.48 0.38 Pin configuration 1 = ANODE 2 = NC 3 = CATHODE |
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BAS19 BAS20 BAS21 BAS19 100fi BAS20 |