A9-70 FET Search Results

A970

Abstract: EPB018A7-70 igd 515 EPB018A5-70 EPB018A9-70 EPB018A9 A9-70 FET
Contextual Info: Excelics EPB018A5/A7/A9-70 DATA SHEET Super Low Noise High Gain Heterojunction FET     6 6  '  • • • NON-HERMETIC LOW COST CERAMIC 70 mil PACKAGE TYPICAL 0.50~0.90dB NOISE FIGURE AND 11.5~13.0dB ASSOCIATED GAIN AT 12GHz 0.3 X 180 MICRON RECESSED “ MUSHROOM” GATE

Contextual Info: IDTQS32384 HIGH-SPEED CMOS 10-BIT BUS SWITCH INDUSTRIAL TEMPERATURE RANGE QUICKSWITCH PRODUCTS HIGH-SPEED CMOS 10-BIT BUS SWITCH FEATURES: • • • • • • • IDTQS32384 DESCRIPTION: Enhanced N channel FET with no inherent diode to Vcc Ω bidirectional switches connect inputs to outputs

QS32861

Contextual Info: IDTQS32861 HIGH-SPEED CMOS QUICKSWITCH 10-BIT BUS SWITCH INDUSTRIAL TEMPERATURE RANGE QUICKSWITCH PRODUCTS HIGH-SPEED CMOS 10-BIT BUS SWITCH WITH FLOW-THROUGH PINOUT FEATURES: − − − − DESCRIPTION Enhanced N channel FET with no inherent diode to Vcc

QS3L2384

Abstract: SO24-2
Contextual Info: IDTQS3L2384 HIGH-SPEED LOW POWER CMOS 10-BIT BUS SWITCH INDUSTRIAL TEMPERATURE RANGE QUICKSWITCH PRODUCTS HIGH-SPEED LOW POWER CMOS 10-BIT BUS EXCHANGE SWITCH DESCRIPTION: FEATURES: − − − − − − Enhanced N channel FET with no inherent diode to Vcc

abe 429

Abstract: MwT-A9 MWT-A970
Contextual Info: M wT- A9 18 GHz High Gain, Low Noise GaAs FET MicroWave Technology 4268 Solar Way Fremont, CA 94538 510-651-6700 FAX 510-651-2208 FEATURES !-7*1 r •-* • +24.5 dBm OUTPUT POWER AT 12 GHz 67 • 9 dB SMALL SIGNAL GAIN AT 12 GHz ee — r 9B • 1.6 dB NOISE FIGURE AT 12 GHz

Contextual Info: IDTQS32862 HIGH-SPEED CMOS 10-BIT BUS SWITCH WITH ACTIVE ENABLES INDUSTRIAL TEMPERATURE RANGE QUICKSWITCH PRODUCTS HIGH-SPEED CMOS 10-BIT BUS SWITCH WITH ACTIVE HIGH AND LOW ENABLES DESCRIPTION: FEATURES: − − − − − Enhanced N channel FET with no inherent diode to Vcc

IDTQS32X2384

Contextual Info: IDTQS32X2384 HIGH-SPEED CMOS 20-BIT BUS SWITCH INDUSTRIAL TEMPERATURE RANGE QUICKSWITCH PRODUCTS HIGH-SPEED CMOS 20-BIT BUS SWITCH DESCRIPTION: FEATURES: • • • • • • • Enhanced N channel FET with no inherent diode to VCC Low propagation delay and zero ground bounce

IDTQS32X2384

Abstract: QS32X2384 diode b14
Contextual Info: IDTQS32X2384 HIGH-SPEED CMOS 20-BIT BUS SWITCH INDUSTRIAL TEMPERATURE RANGE QUICKSWITCH PRODUCTS HIGH-SPEED CMOS 20-BIT BUS SWITCH DESCRIPTION: FEATURES: • • • • • • • Enhanced N channel FET with no inherent diode to VCC Low propagation delay and zero ground bounce

QS3L2384

Contextual Info: IDTQS3L2384 HIGH-SPEED LOW POWER CMOS 10-BIT BUS SWITCH INDUSTRIAL TEMPERATURE RANGE QUICKSWITCH PRODUCTS HIGH-SPEED LOW POWER CMOS 10-BIT BUS EXCHANGE SWITCH DESCRIPTION: FEATURES: Enhanced N channel FET with no inherent diode to Vcc Low propagation delay, zero ground bounce

MWT-A970

Abstract: A9-70 FET
Contextual Info: MI CR O W A V E T E C H N O L O G Y bbE D IMRÜIV t > 1 2 m D D D D 0 D 2 ß b 3SÛ MwT - A9 18 GHz High Gain, Low Noise GaAs FET MicroWave Technology 4268 Solar Way Fremont, CA 94538 510-651-6700 FAX 510-651-2208 FEATURES I-7S1 • +24.5 dBm O UTPUT POW ER A T 12 GHz

mwt-970

Abstract: MwT-971 mwt 971 MWT-973
Contextual Info: MwT-9 18 GHz High Power GaAs FET DOWNLOAD ADDITIONAL DATA WWW.MWTINC.COM All Dimensions in Microns 75 FEATURES 67 • +26 dBm OUTPUT POWER AT 12 GHz • 8.5 dB SMALL SIGNAL GAIN AT 12 GHz • 0.3 MICRON REFRACTORY METAL/GOLD GATE • 750 MICRON GATE WIDTH

a970 transistor

Abstract: A970 MWT-A970 A973 mwt 971 transistor a970 A971 MwT-A9
Contextual Info: MwT-A9 18 GHz High Gain, Low Noise GaAs FET DOWNLOAD ADDITIONAL DATA WWW.MWTINC.COM All Dimensions in Microns 75 FEATURES • IDEAL FOR HIGH DYNAMIC RANGE RECEIVER APPLICATIONS • 1.6 dB NOISE FIGURE AT 12 GHz • +24.5 dBm OUTPUT POWER AT 12 GHz • 9 dB SMALL SIGNAL GAIN AT 12 GHz

transistor a970

Abstract: A970 a970 transistor MWT-A970 datasheet a970 MwT-A9 A971 A973
Contextual Info: MwT-A9 18 GHz High Gain, Low Noise GaAs FET DOWNLOAD ADDITIONAL DATA WWW.MWTINC.COM All Dimensions in Microns 75 FEATURES • IDEAL FOR HIGH DYNAMIC RANGE RECEIVER APPLICATIONS • 1.6 dB NOISE FIGURE AT 12 GHz • +24.5 dBm OUTPUT POWER AT 12 GHz • 9 dB SMALL SIGNAL GAIN AT 12 GHz

IDTQS32X2861

Abstract: QS32X2861
Contextual Info: IDTQS32X2861 HIGH-SPEED CMOS 20-BIT BUS SWITCH WITH FLOW-THRU PINOUT INDUSTRIAL TEMPERATURE RANGE QUICKSWITCH PRODUCTS HIGH-SPEED CMOS 20-BIT BUS SWITCH WITH FLOW-THRU PINOUT DESCRIPTION FEATURES: − − − − Enhanced N channel FET with no inherent diode to Vcc

diode a29

Contextual Info: QuickSwitch Products QS34XR245 High-Speed C M O S QuickSwitch t o ™ L o w Resistance MultiWidth™ Bus Switches ,in c. 3 2 - B it FEATURES/BENEFITS DESCRIPTION • Enhanced N channel FET with no inherent diode to Vcc • 2.5Q bidirectional switches connect inputs

Contextual Info: QuickSwitch Products H QS34XR245 High-Speed CMOS QuickSwitch S emiconductor , I nc . ADVANCE in f o r m a t io n 3 2 ' B it L ° W R e s is ta n c e Multi Width Bus Switches FEATURES/BENEFITS DESCRIPTION • Enhanced N channel FET with no inherent diode to Vcc

Power DIODE A30

Abstract: QS34XR245 b12 diode DIODE B12 41 QS34XR245Q3 QS3R245
Contextual Info: QS34XR245 QuickSwitch Products High-Speed CMOS QuickSwitch 32-Bit Low Resistance MultiWidthTM Bus Switches Q QUALITY SEMICONDUCTOR, INC. QS34XR245 FEATURES/BENEFITS DESCRIPTION • Enhanced N channel FET with no inherent diode to VCC • 2.5Ω bidirectional switches connect inputs

Contextual Info: QuickSwitch Products High-Speed CMOS qs34X245 qs 34x2245 QuickSwitch 32-Bit Multi Width Bus Switches Semiconductor, I nc. FEATURES/BENEFITS DESCRIPTION • Enhanced N channel FET with no inherent diode to Vcc • Bidirectional switches connect inputs

Contextual Info: VS] s ,c ™ in c . QuickSwitch® Products qs34xr245 High-Speed CMOS QuickSwitch 32-P'*Low Resistance MultiWidth™ pus Switches infoa “ n FEATURES/BENEFITS DESCRIPTION • Enhanced N channel FET with no inherent diode to Vcc • 2.5 Q. bidirectional switches connect inputs

diode A23

Abstract: QS3245 QS34X2245 QS34X245
Contextual Info: QS34X245, QS34X2245 QuickSwitch Products High-Speed CMOS QuickSwitch 32-Bit MultiWidthTM Bus Switches Q QUALITY SEMICONDUCTOR, INC. QS34X245 QS34X2245 FEATURES/BENEFITS DESCRIPTION • Enhanced N channel FET with no inherent diode to VCC • Bidirectional switches connect inputs

Contextual Info: 1 QuickS/vitch Products Hi gh-Speed CMOS Q ji ckSwi tch s iconducior,inc. QS34XR245 32- B t Low Resistance Multi Width™ Bus Switches FEATURES/BENEFITS DESCRIPTION • Enhanced N channel FET with no inherent diode to Vcc • 2.5i2 bidirectional switches connect inputs

Contextual Info: 1 QuickSwitch Products qs 34xr 245 High-Speed CMOS QuickSwitch 3 2 ' B i t Low Resistance MultiWidth Bus Switches s™ ico n d u cio r,in c. FEATURES/BENEFITS DESCRIPTION • Enhanced N channel FET with no inherent diode to Vcc • 2.5i2 bidirectional switches connect inputs

3474

Abstract: FST1632383 FST163383 IDT74FST1632383 IDT74FST163383 3UA48
Contextual Info: 20-BIT BUS EXCHANGE SWITCH IDT74FST163383 IDT74FST1632383 ADVANCE INFORMATION Integrated Device Technology, Inc. no noise of their own while providing a low resistance path for an external driver. These devices connect input and output ports through an n-channel FET. When the gate-to-source

in7895

Contextual Info: MwT-A9 IS GHz H igh G ain, Low N oise G aA s FET D O W N LO A D A D D IT IO N A L DATA WWWMWTINC.COM A l l D im e n s io n s in M ic r o n s FEATURES • • • • • • • C H I P T H I C K N E S S - 1 25 IDEAL FOR. HIGH DYNAMIC R.VNGE RECEIVER. APPLICATIONS