AADV Search Results

jd 1801

Abstract: 3H103 Z68C d3s9
Contextual Info: 9NIMVHQ 00 I Jo I ; I I A3 a O N I M V U d 31V 3S 133HS o i ON £>N I wvdd y 1S3a 3CIOO 3 9 VO H S IN I 3 1H9I3M S319NV Did fr 03d S NO I I V O I I d dV 3Z I £ 1026 1-801 33dS N O I S d 3 A H S i l U d 3 Q V 3 H Q d V O aAdv !M 'd d IA IV !M 'd ÇIJJÔ

136b3

Abstract: B2321
Contextual Info: f u PERICOM AADVANCE D V A N C E INFORMATION 1NJ V PI5C16214 PI5C162214 2 5 0 i mi mi mi mi mi mi mi mi mi mi mi mi mi mi mi il mi mi mi mi mi mi mi mi mi mi mi mi mi mi mi mi mi mi mi mi mi mi mi mi mi mi mi mi i 3-to-l Bus-Select Switch Product Features:

C104A

Contextual Info: f u PERICOM AADVANCE D V A N C E INFORMATION 1NJ V PI5C16209 PI5C162209 25ft I ill ill ill ill ill ill ill ill ill ill ill ill ill ill ill II ill ill ill ill ill ill ill ill ill ill ill ill ill ill ill ill ill ill ill ill ill ill ill ill ill ill ill ill I

89x0

Abstract: 099Z
Contextual Info: o o o z u v m c A3d s o s t d m 3 A3d 133HS O N iM v y a 31V0S 099£ZZ' 6 Z .Z .0 0 a ^ H o i s n o 1H0I3M L V H S IN IJ STO NV Ol d V old e Ol d 2 Ol d L Ol d 0 =F 01 0 31 0 l dl S3 d on ONiMvaa 3 00 0 39V0 3ZIS e ro =F =f f ‘l V 0 l i y 3 A h u m ‘1 V N 3 I S

Contextual Info: ooozavmc A3a sost dm za A3U JO L:8 133HS ONiMVda y^oisno 31V3S 61100 UU91S< 0 1 Q 3 1 0 ld lS 3 d on 0NiMvya 3QOO 30V3 LV tO O Ll - f l l 3 Z IS 03dS yoioi^ {a33V^0Vd 3dVl 13^00d ‘sav31 3NIM lino ‘I0[t9'0]^0' ‘ivony^A ‘Aiamssv 3i0vid303y U 0 l| D J 0 d j0 3

962n

Contextual Info: 2 MEG x 16 ASYNC/PAGE/BURST CellularRAM MEMORY BURST CellularRAMTM MT45W2MW16BAFB Features Figure 1: 54-Ball VFBGA • Single device supports asynchronous, page, and burst operations • VCC, VCCQ Voltages 1.70V–1.95V VCC 1.70V–3.30V VCCQ • Random Access Time: 70ns

cr1 5 p26z

Contextual Info: 128Mb: 8 Meg x 16 Async/Page/Burst CellularRAM 1.5 Features Async/Page/Burst CellularRAMTM 1.5 MT45W8MW16BGX Features Figure 1: • Single device supports asynchronous, page, and burst operations • VCC, VCCQ voltages: – 1.7V–1.95V VCC – 1.7V–3.3V1 VCCQ

Contextual Info: 32Mb: 2 Meg x 16 Async/Page/Burst CellularRAM 1.0 Memory Features Async/Page/Burst CellularRAM 1.0 Memory MT45W2MW16BGB Features Figure 1: • Single device supports asynchronous, page, and burst operations • Random access time: 70ns • VCC, VCCQ voltages

BCR100

Contextual Info: 70 128Mb/64Mb Async/Page/Burst CellularRAM 1.5 Memory Figure 1: Features • Single device supports asynchronous, page, and burst operations • VCC, VCCQ voltages: 1.7V–1.95V VCC 1.7V–1.95V VCCQ • Random access time: 70ns • Burst mode READ and WRITE access:

SR52

Abstract: FY618 SR-52
Contextual Info: 8 MEG x 16 ASYNC/PAGE/BURST FLASH MEMORY FLASH MEMORY MT28F1284W18 1.8V Low Voltage, Extended Temperature Features Figure 1: 56-Ball VFBGA Dedicated commands to decrease programming times for both in-factory and in-system operations Fast programming algorithm FPA for fast PROGRAM

Transistor TT 2246

Abstract: TT 2206 datasheet apm 4906 TT 2206 transistor tt 2206 tt 2246 bt 7377 SOT-23 AAAA bc 5478 AAXZ
Contextual Info: SOT TOPMARKS: 2 and 4 Letter ID Coding SOT Topmarks − April 24, 2005 Sorted By Part Number Sorted By Topmark Part Prefix Number Suffix Topmark Package Part Prefix Number Suffix Topmark Package LM 4040A EM3−2.1 FZNG 3/SOT−23 MAX 1916 ZT 1111 6/SOT−23

jd 1801 data sheet

Abstract: AAAM SOT23-6 ABAA sot23 SOT23-6 JD 1801 fm 4213 ic AAHB LM 1117 bs33 SOT23-6 AAFQ
Contextual Info: SOT TOPMARKS: 2 and 4 Letter ID Coding SOT Topmarks − August 31, 2003 Sorted By Part Number Sorted By Topmark Part Prefix Number Suffix Topmark Package Part Prefix Number Suffix Topmark Package LM 4040A IM3−2.1 FZEF SOT23−3 MAX 809L UR AA SOT23−3 LM

FY541

Abstract: micron flash controller MT28F322D15FH-104BET
Contextual Info: ADVANCE‡ 2 MEG x 16 ASYNC/PAGE/BURST FLASH MEMORY FLASH MEMORY MT28F322D15FH Super Low Voltage, Extended Temperature FEATURES BALL ASSIGNMENT 58-Ball FBGA • Flexible dual-bank architecture* – Support for true concurrent operation with zero latency – Read bank a during program bank b and vice

MS-026D

Abstract: as5sp128k32dq
Contextual Info: COTSPEM PEM COTS AS5SP128K36DQ AS5SP128K36DQ SSRAM SSRAM SSRAM AustinSemiconductor, Semiconductor,Inc. Inc. Austin Parameter Symbol Cycle Time tCYC Cycle Time tCYC Cycle Time tCYC Clock Access Time tCD Clock Access Time tCD Clock Access Time tCD Output Enable

Contextual Info: S71WSxxxJ based MCPs Stacked Multi-Chip Product MCP 128/64 Megabit (8M/4M x 16-bit) CMOS 1.8 Volt-only, Simultaneous Read/Write, Burst Mode Flash Memory with CellularRAM PRELIMINARY Distinctive Characteristics MCP Features „ „ Power supply voltage of 1.7 to 1.95V

h11m

Contextual Info: poiuiup0/£¿6ot7dwo/eujoi|/ a 01 L u A3d d-in O L u 133H5 L°0 ¿6^ L ' 9 N I M V d O 33V0S ON 0 3 1 0 ItíiS3d 6¿¿00 9N]HVaa 3000 39V0 d 3 N 0 1 b n 0 LV 1H9I3M 3ZI5 03dS S N O U I S O d 8 + ^6 'U 3d A l ' l i d SS3dd ^Qdvoodnd ' A o a N a s s v d i o v i d d ü d d

FX109

Abstract: FY108 "NOR Flash" intel 28f MT28F644W18 FY113 FX113 FW117 fw12 FW118 FY114
Contextual Info: 4 MEG x 16 ASYNC/PAGE/BURST FLASH MEMORY FLASH MEMORY MT28F644W18 MT28F644W30 1.8V Low Voltage, Extended Temperature Features • • • • • • • Figure 1: 56-Ball VFBGA Flexible 4Mb multipartition architecture Single word 16-bit data bus Support for true concurrent operation with zero latency

Contextual Info: S71WS-N Stacked Multi-Chip Product MCP 1.8 Volt-only Simultaneous Read/Write, Burst-mode Flash Memory with CellularRAM ADVANCE INFORMATION Data Sheet 1RWLFH WR 5HDGHUV 7KLV GRFXPHQW VWDWHV WKH FXUUHQW WHFKQLFDO VSHFLILFDWLRQV UHJDUGLQJ WKH 6SDQVLRQ SURGXFW V GHVFULEHG KHUHLQ (DFK SURGXFW GHVFULEHG

Contextual Info: S71WS-N Stacked Multi-Chip Product MCP 1.8 Volt-only Simultaneous Read/Write, Burst-mode Flash Memory with CellularRAM ADVANCE INFORMATION Data Sheet 1RWLFH WR 5HDGHUV 7KLV GRFXPHQW VWDWHV WKH FXUUHQW WHFKQLFDO VSHFLILFDWLRQV UHJDUGLQJ WKH 6SDQVLRQ SURGXFW V GHVFULEHG KHUHLQ (DFK SURGXFW GHVFULEHG

S71WS512ND0BFWEP

Abstract: LZ 48H 526 71WS512ND0BFWEP BAX55 S71WS512 71WS512ND
Contextual Info: S71WS512Nx0/S71WS256Nx0 Based MCPs Stacked Multi-chip Product MCP 256/512 Megabit (32M/16M x 16 bit) CMOS 1.8 Volt-only Simultaneous Read/Write, Burst-mode Flash Memory with 128/64Megabit (8M/4M x 16-Bit) CELLULAR RAM ADVANCE INFORMATION Datasheet Distinctive Characteristics

Contextual Info: 64Mb: 4 Meg x 16 Async/Page/Burst CellularRAM 1.5 Memory Features Async/Page/Burst CellularRAM 1.5 Memory MT45W4MW16BCGB Features Figure 1: • Single device supports asynchronous, page, and burst operations • VCC, VCCQ voltages: – 1.7–1.95V VCC – 1.7–3.3V VCCQ1

D5138

Contextual Info: 80 / O S 08 t n L JO L A3y 133HS L :Í7 ONiMVda y^oisno 31V0S 6¿¿00 L V 01 Q 310ldlS3d 0NiMvya on 3QOO 33V0 Z7V T 1H0I3M 3 Z IS “ CL' “ - Ü3dS N O llVOnddV LULU^ 33ds lo n ao yd ‘gj UJUJ^ ^0Vd-Z ‘3inaon 1VN0 IS ‘AISIAGSSV Nld 3IWN S3!UOJ]98|3

X006

Abstract: RK 732 - 228
Contextual Info: U / 0 S08t Z JO L L :8 133HS ONiMVda y^^oisno 31V 0 S LV 6 Z .Z .0 0 01 Q310ldlS3d on 0NiMvya 3QO O tO O Ll - f l l 3 Z IS 30VO - 3 3 f L — 8 0 T [£l/0]Q 00’ 03dS NOLLVOIlddV yoioi^ ‘a^ov^ovd 3dvi i3^ood ‘sav3i 3NIM lin o ‘10 O 9‘0]SZ0’ ‘IVOIlfcGA

Contextual Info: ooozavm c A3& H A3 H JO 133HS O N iM v y a 31 VOS 6 1 1 0 0 Z 0 0 £ Z Z ~ O 0 1 a 3 io iu is 3 H ON 3NIMVUQ 3000 33V0 d B w o is n o LV ±H3I3M 3ZIS 03 dS NOIlVOIIddV 8 0 9 C -S 0 L Z L UOI^DJOdjOQ Dd S 0 IU 0 jp 9 |3 d ja w n N Id V d NSOd n v N o is J O ON