AB-1 NATIONAL Search Results

Contextual Info: 1 DIGITAL Semiconductor 21340-AB Overview The DIGITAL Sem iconductor 21340-AB 10/100-M b/s B uffered Port Switch also called the 21340-A B is an intelligent, m ultisegm ent, four-port buffered repeater building block. The 21340-AB can be used to build a variety o f advanced Ethernet

Contextual Info: TDA1308 Class-AB stereo headphone driver Rev. 5 — 14 March 2011 Product data sheet 1. General description The TDA1308 is an integrated class-AB stereo headphone driver contained in an SO8 or a TSSOP8 plastic package. The device is fabricated in a 1 m Complementary Metal

TDA1308

Abstract: TDA1308T TDA1308TT TDA1308 application notes TDA1308A TDA1308AUK IEC wiring schematic symbols
Contextual Info: TDA1308 Class-AB stereo headphone driver Rev. 5 — 14 March 2011 Product data sheet 1. General description The TDA1308 is an integrated class-AB stereo headphone driver contained in an SO8 or a TSSOP8 plastic package. The device is fabricated in a 1 m Complementary Metal

handbook of shipboard electromagnetic shielding practices

Abstract: ASTM-A-753 MIL-B-857 MIL-STD-463 s41 hall effect sensor s41 hall effect sensor s41 s41 hall effect sensor S9300-AW-EDG-010 Bendix synchro control transformer MIL-C-915
Contextual Info: S9407-AB-HBK-010 Revision 2 HANDBOOK OF SHIPBOARD ELECTROMAGNETIC SHIELDING PRACTICES This document supersedes S9407-AB-HBK-010, Revision 1 date published 30 September 1989 APPROVED FOR PUBLIC RELEASE; DISTRIBUTION IS UNLIMITED Published by Direction of Commander, Naval Sea Systems Command

display expansion

Abstract: lpc interface schematic
Contextual Info: Display Expansion Board - User’s Guide Copyright 2012 Embedded Artists AB Display Expansion Board Get Up-and-Running Quickly and Start Developing Your Application On Day 1! EA-USG-1209 Rev A Display Expansion Board - User’s Guide Page 2 Embedded Artists AB

sqfp 14x20

Abstract: 74ALSXX P51XA-G3 OTP-e PC 74 HCT 32 P sQFP 14X14 TDA1308 equivalent SG 2368 tqfp 14x14 tray TDA1308 application notes
Contextual Info: Philips Semiconductors Product specification Class AB stereo headphone driver TDA1308 FEATURES GENERAL DESCRIPTION • Wide temperature range The TDA1308 is an integrated class AB stereo headphone driver contained in an SO8 or a DIP8 plastic package. The device is fabricated in a 1 mm CMOS process and has

INS8251N

Abstract: USART 8251 INS8080A INS8224 8251 microprocessor block diagram 8251 usart programming ta 8251 3 pins terminal block INS8251J rd 3153
Contextual Info: National Semiconductor Novem ber 1980 n 00 io 01 INS8251 Programmable Communication Interface Features T h e IN S 8 2 5 1 is a p rog ram m ab le U n iversal S y n c h ro n o u s / • S y n c h ro n o u s O p e ratio n s • S y n c h ro n o u s M o d e C ap ab ilitie s

Contextual Info: LM49200, LM49200TLEVAL www.ti.com LM49200 SNAS459A – MAY 2009 – REVISED APRIL 2013 Stereo Class AB Audio Subsystem with a True Ground Headphone Amplifier Check for Samples: LM49200, LM49200TLEVAL FEATURES APPLICATIONS • • • • 1 2 • • • •

Contextual Info: LM49200, LM49200TLEVAL www.ti.com LM49200 SNAS459A – MAY 2009 – REVISED APRIL 2013 Stereo Class AB Audio Subsystem with a True Ground Headphone Amplifier Check for Samples: LM49200, LM49200TLEVAL FEATURES APPLICATIONS • • • • 1 2 • • • •

Contextual Info: LM49200, LM49200TLEVAL www.ti.com LM49200 SNAS459A – MAY 2009 – REVISED APRIL 2013 Stereo Class AB Audio Subsystem with a True Ground Headphone Amplifier Check for Samples: LM49200, LM49200TLEVAL FEATURES APPLICATIONS • • • • 1 2 • • • •

optocoupler bi-directional

Contextual Info: VISHAY LH1539AAC/ AACTR/ AB Vishay Semiconductors 1 Form A Photo Darlington Telecomswitch SMD DIP Features • Solid State Relay and Autopolarity Optocoupler in One 8-pin Package • Isolation Test Voltage, 5300 VRMS • Surface Mountable • Optocoupler - Bidirectional Current Detection

210 optocoupler

Abstract: LH1525 LH1539AAC LH1539AACTR LH1539AB
Contextual Info: VISHAY LH1539AAC/ AACTR/ AB Vishay Semiconductors 1 Form A Photo Darlington Telecomswitch SMD DIP Features • Solid State Relay and Autopolarity Optocoupler in One 8-pin Package • Isolation Test Voltage, 5300 VRMS • Surface Mountable • Optocoupler - Bidirectional Current Detection

Contextual Info: VISHAY LH1539AAC/ AACTR/ AB Vishay Semiconductors 1 Form A Photo Darlington Telecomswitch SMD DIP Features • Solid State Relay and Autopolarity Optocoupler in One 8-pin Package • Isolation Test Voltage, 5300 VRMS • Surface Mountable • Optocoupler - Bidirectional Current Detection

LH1525

Abstract: LH1539AAC LH1539AACTR LH1539AB smd optocoupler
Contextual Info: VISHAY LH1539AAC/ AACTR/ AB Vishay Semiconductors 1 Form A Photo Darlington Telecomswitch SMD DIP Features • Solid State Relay and Autopolarity Optocoupler in One 8-pin Package • Isolation Test Voltage, 5300 VRMS • Surface Mountable • Optocoupler - Bidirectional Current Detection

nxp TRANSISTOR SMD 13

Contextual Info: BLA6G1011-200R Power LDMOS transistor Rev. 02 — 1 March 2010 Preliminary data sheet 1. Product profile 1.1 General description 200 W LDMOS power transistor for avionics applications at frequencies from 1030 MHz to 1090 MHz. Table 1. Test information Typical RF performance at Tcase = 25 °C in a class-AB production test circuit.

Contextual Info: BLF6G10L-40BRN Power LDMOS transistor Rev. 3 — 16 November 2010 Product data sheet 1. Product profile 1.1 General description 40 W LDMOS power transistor for base station applications at frequencies from 700 MHz to 1 GHz. Table 1. Typical performance Typical RF performance at Tcase = 25 °C in a class-AB production test circuit.

Contextual Info: BLF6G10L-40BRN Power LDMOS transistor Rev. 2 — 27 August 2010 Preliminary data sheet 1. Product profile 1.1 General description 40 W LDMOS power transistor for base station applications at frequencies from 700 MHz to 1 GHz. Table 1. Typical performance Typical RF performance at Tcase = 25 °C in a class-AB production test circuit.

RO4350

Contextual Info: BLF6G10L-40BRN Power LDMOS transistor Rev. 3 — 16 November 2010 Product data sheet 1. Product profile 1.1 General description 40 W LDMOS power transistor for base station applications at frequencies from 700 MHz to 1 GHz. Table 1. Typical performance Typical RF performance at Tcase = 25 °C in a class-AB production test circuit.

Contextual Info: BLF6G05LS-200RN Power LDMOS transistor Rev. 1 — 11 May 2011 Objective data sheet 1. Product profile 1.1 General description 200 W LDMOS power transistor for base station applications at frequencies from 460 MHz to 470 MHz. Table 1. Typical performance Typical RF performance at Tcase = 25 °C in a class-AB production test circuit.

810 souriau

Abstract: ATC100B RO4350 souriau 810
Contextual Info: BLF6G10L-40BRN Power LDMOS transistor Rev. 01 — 9 August 2010 Preliminary data sheet 1. Product profile 1.1 General description 40 W LDMOS power transistor for base station applications at frequencies from 700 MHz to 1 GHz. Table 1. Typical performance Typical RF performance at Tcase = 25 °C in a class-AB production test circuit.

Headphone Amplifiers

Abstract: 24v Audio amplifier class AB Amplifier With Active Output Clipping "Headphone Amplifiers" 32 headphone amplifier class AB mosfet class ab rf naturalsounding mosfet power amplifier class D SIGNAL PATH designer CLASS AB MOSFET RF amplifier
Contextual Info: SIGNAL PATH designer Expert tips and techniques for PowerWise® energy-efficient design No. 118 Feature Article . 1-5 Energy-Efficient Solutions .2 PowerWise® Class G versus Class AB Headphone Amplifiers — By Richard Gomez, Audio Product Engineer

J122 SMD TRANSISTOR

Abstract: BLC6G22L-40BN/2 800B BLF6G22L-40BN
Contextual Info: BLF6G22L-40BN Power LDMOS transistor Rev. 1 — 30 August 2010 Product data sheet 1. Product profile 1.1 General description 40 W LDMOS power transistor for base station applications at frequencies from 2000 MHz to 2200 MHz. Table 1. Typical performance RF performance at Tcase = 25 °C in a common source class-AB production test circuit.

Contextual Info: BLF6G22L-40BN Power LDMOS transistor Rev. 1 — 30 August 2010 Product data sheet 1. Product profile 1.1 General description 40 W LDMOS power transistor for base station applications at frequencies from 2000 MHz to 2200 MHz. Table 1. Typical performance RF performance at Tcase = 25 °C in a common source class-AB production test circuit.

BLF6G13L-250P

Abstract: JESD625-a 250WF
Contextual Info: BLF6G13L-250P; BLF6G13LS-250P Power LDMOS transistor Rev. 1 — 2 November 2010 Objective data sheet 1. Product profile 1.1 General description 250 W LDMOS power transistor intended for CW applications at a frequency of 1.3 GHz. Table 1. Test information Typical RF performance at Tcase = 25 °C; IDq = 100 mA; in a class-AB production test circuit.