AB-40 INTEL Search Results

stk*402-270

Abstract: stk408 STK402-270 Sanyo audio amplifier STK402-200 STK402-240 STK408-000 series TM-35 stk402-000 stk402 110
Contextual Info: Ordering number : ENN7072 Thick-Film Hybrid IC STK402-270 Three-Channel Class AB Audio Power Amplifier IC 40 W + 40 W + 40 W Overview Package Dimensions The STK402-200 series products are audio power amplifier hybrid ICs that consist of optimally-designed

AB-40

Contextual Info: intel. AB-40 APPLICATION BRIEF 32-Bit Math Routines for the 8051 RICK SCHUE REGIONAL APPLICATIONS SPECIALIST INDIANAPOLIS, IN D IA N A October 1992 Order Number: 270530-002 Information in this document is provided in connection with Intel products. Intel assumes no liability whatsoev­

eer3016

Abstract: EER3016 transformer ZD101 22V ZD101 Fuse 250V 2A 56k 1kv 5d-9 BD101 IC301 1k 275vac
Contextual Info: www.fairchildsemi.com AB-50 LCD Monitor Applications LC-40W-FSDM07652R – 40 Watts Application FPS Device Input Voltage Range Rated Output Power LCD Monitor FSDM07652R 85–265 Vac 40W Output Voltage Rated Current 5V (2.0A) 12V (2.5A) Features • • •

EER-5345

Abstract: CTV-217W-KA5Q1565RF KA5Q1565RF 10D-9 eer5345 10D9 VR201 L202 ctv circuit diagram EER53
Contextual Info: www.fairchildsemi.com AB-40 Color TV Applications CTV-217W-KA5Q1565RF – 217 Watts Application FPS Device Input Voltage Range Rated Output Power C-TV KA5Q1565RF 85–265 Vac 217W Output Voltage Rated Current 125V (1.0A) 20V (1.0A) 16V (3.0A) 12V (2.0A)

transistor C3

Abstract: EC 401 TRANSISTOR
Contextual Info: BLF6G20-40 Power LDMOS transistor Rev. 01 — 19 January 2009 Product data sheet 1. Product profile 1.1 General description 40 W LDMOS power transistor for base station applications at frequencies from 1800 MHz to 2000 MHz. Table 1. Typical performance RF performance at Tcase = 25 °C in a common source class-AB production test circuit.

EER3530

Abstract: ST-40W-FSDM0565 LF102 EER-3530 FSDM0565 ST-40W BD101 FOD2741 FSDM0565R AB-55
Contextual Info: www.fairchildsemi.com AB-55 Set Top Box Applications ST-40W-FSDM0565 – 40 Watts Application FPS Device Input Voltage Range Rated Output Power Set Top Box FSDM0565R 85–265 Vac 40W Output Voltage Rated Current 3.3V (1.5A) 5.0V (1.0A) 9.0V (0.8A) 13V (1.0A)

stk*404-070

Abstract: STK404-130 STK404-070 STK404-050 STK404-090 STK404-140 transistor ac 125 equivalent stk404-120
Contextual Info: Ordering number : ENN7343 Thick-Film Hybrid IC STK404-070 One-Channel Class AB Audio Power Amplifier IC 40 W Overview Package Dimensions The STK404-000 series products are audio power amplifier hybrid ICs that consist of optimally-designed discrete component power amplifier circuits that have

Contextual Info: Package outline HBGA672: plastic thermal enhanced ball grid array package; 672 balls; body 40 x 40 x 1.2 mm; heatsink B D SOT835-1 A ball A1 index area A A2 A1 E A4 detail X C e1 f1 e AK AH AF AD AB Y V T P M K H F D B AJ AG AE e AC heatsink AA W U e2 R N

Contextual Info: Package outline HBGA1312: plastic thermal enhanced ball grid array package; 1312 balls; body 40 x 40 x 1.65 mm; heatsink B D SOT624-1 A ball A1 index area A E A2 A1 detail X C e1 AV AT AP AM AK AH AF AD AB Y V T P M K H F D B ∅w M C AW AU AR AN AL AJ AG

Contextual Info: Package outline HBGA600: plastic thermal enhanced ball grid array package; 600 balls; body 40 x 40 x 0.9 mm; heatsink B D SOT605-1 A ball A1 index area A A2 A1 E A4 detail X C e1 f1 e AK AH AF AD AB Y F B AJ AG AE e AC heatsink AA e2 R M D AL U T P H N L J

Contextual Info: Package outline HBGA1092: plastic thermal enhanced ball grid array package; 1092 balls; body 40 x 40 x 1.75 mm; heatsink SOT948-1 B D D1 A ball A1 index area E1 j E A A2 A1 detail X e1 e AV AT AP AM AK AH AF AD AB Y V T P M K H F D B ∅v ∅w b 1/2 e AU AR

AB-40

Abstract: 6 BIT MUL OF 8051 AB-40 intel B10M intel 8051 application intel 8051 application information
Contextual Info: AB-40 APPLICATION BRIEF 32-Bit Math Routines for the 8051 RICK SCHUE REGIONAL APPLICATIONS SPECIALIST INDIANAPOLIS INDIANA October 1992 Order Number 270530-002 Information in this document is provided in connection with Intel products Intel assumes no liability whatsoever including infringement of any patent or copyright for sale and use of Intel products except as provided in

Contextual Info: Package outline HBGA760: plastic thermal enhanced ball grid array package; 760 balls; body 40 x 40 x 1.75 mm; heatsink D D1 SOT846-1 B A ball A1 index area j E1 E A A2 A1 detail X C e1 e AK AH AF AD AB Y V T P M K H F D B ∅v ∅w b 1/2 e M M AJ AG e AE AC

Contextual Info: Package outline HBGA624: plastic thermal enhanced ball grid array package; 624 balls; body 40 x 40 x 1.75 mm; heatsink D D1 SOT860-1 B A ball A1 index area j E1 E A A2 A1 detail X C e1 e AK AH AF AD AB Y V T P M K H F D B ∅v ∅w b 1/2 e M M AJ AG e AE AC

Contextual Info: Package outline HBGA564: plastic thermal enhanced ball grid array package; 564 balls; body 40 x 40 x 1.75 mm; heatsink SOT799-1 B D A D1 ball A1 index area A j A2 E1 E A1 detail X C e1 e 1/2 e y1 C ∅v M C A B b y ∅w M C AK AH AF AD AB Y V T P M K H F D

Contextual Info: Package outline BGA956: plastic ball grid array package; 956 balls; body 40 x 40 x 1.75 mm SOT651-1 B D A D1 ball A1 index area A E1 E A2 A1 detail X C e1 b 1/2 e e y y1 C ∅v M C A B ∅w M C AV AU AT AR AP AN AM AL AK AJ AH AG AF AE AD AC AB AA Y W V U

Contextual Info: BLF6G10L-40BRN Power LDMOS transistor Rev. 3 — 16 November 2010 Product data sheet 1. Product profile 1.1 General description 40 W LDMOS power transistor for base station applications at frequencies from 700 MHz to 1 GHz. Table 1. Typical performance Typical RF performance at Tcase = 25 °C in a class-AB production test circuit.

Contextual Info: BLF6G10L-40BRN Power LDMOS transistor Rev. 2 — 27 August 2010 Preliminary data sheet 1. Product profile 1.1 General description 40 W LDMOS power transistor for base station applications at frequencies from 700 MHz to 1 GHz. Table 1. Typical performance Typical RF performance at Tcase = 25 °C in a class-AB production test circuit.

RO4350

Contextual Info: BLF6G10L-40BRN Power LDMOS transistor Rev. 3 — 16 November 2010 Product data sheet 1. Product profile 1.1 General description 40 W LDMOS power transistor for base station applications at frequencies from 700 MHz to 1 GHz. Table 1. Typical performance Typical RF performance at Tcase = 25 °C in a class-AB production test circuit.

810 souriau

Abstract: ATC100B RO4350 souriau 810
Contextual Info: BLF6G10L-40BRN Power LDMOS transistor Rev. 01 — 9 August 2010 Preliminary data sheet 1. Product profile 1.1 General description 40 W LDMOS power transistor for base station applications at frequencies from 700 MHz to 1 GHz. Table 1. Typical performance Typical RF performance at Tcase = 25 °C in a class-AB production test circuit.

Contextual Info: Package outline BGA564: plastic ball grid array package; 564 balls; body 40 x 40 x 1.75 mm SOT947-1 B D D1 A ball A1 index area E1 E A A1 A2 detail X e1 e ∅v ∅w b 1/2 e M M C C A B C y y1 C AK AJ AH AG AF AE AD AC AB AA Y W V U T R P N M L K J H G F E

Contextual Info: Package outline BGA760: plastic ball grid array package; 760 balls; body 40 x 40 x 1.75 mm SOT652-1 B D A D1 ball A1 index area A E1 E A2 A1 detail X C e1 b 1/2 e e y y1 C ∅v M C A B ∅w M C AK AJ AH AG AF AE AD AC AB AA Y W V U T R P N M L K J H G F E

Contextual Info: Package outline BGA656: plastic ball grid array package; 656 balls; body 40 x 40 x 1.75 mm SOT588-1 B D A D1 ball A1 index area A E1 E A2 A1 detail X C e1 b 1/2 e e y y1 C ∅v M C A B ∅w M C AK AJ AH AG AF AE AD AC AB AA Y W V U T R P N M L K J H G F E

Contextual Info: Package outline BGA658: plastic ball grid array package; 658 balls; body 40 x 40 x 1.75 mm SOT623-1 B D A D1 ball A1 index area A E1 E A2 A1 detail X C e1 b 1/2 e e y y1 C ∅v M C A B ∅w M C AK AH AF AD AB Y V T P M K H F D B AJ e AG AE AC AA W U e2 R N