ABB 12 30 01 Search Results

abb RXMA 2

Abstract: RK 211 185 rk 211 185ad abb relay B03-1003E RK211 B03-1211E RXMA 2 RK 211 189 B03-9301E
Contextual Info: l i m i ASEA B R O W N BO VERI Type RXMA 2 Auxiliary relay, 10, 12 or 15 contacts B03-1211E Page 1 June 30, 1982 Data subject to change without notice ABB Relays Abstract V • Self-reset • DC voltage operated • 10, 12 or 15 medium- trip- duty contacts:

Contextual Info: 5SDD 10T1800 5SDD 10T1800 Old part no. D 806C-1010-18 Rectifier Diode Properties Industry standard housing Suitable for parallel operation High operating temperature Low forward voltage drop Key Parameters V RRM = 1 800 I FAVm = 1 013 I FSM = 13 500 V TO = 0.934

5SDD10T1800

Abstract: 5SDD 10T1800 5SDD10T1600 KA-241 10T16
Contextual Info: 5SDD 10T1800 5SDD 10T1800 Old part no. D 806C-1010-18 Rectifier Diode Properties § Industry standard housing § Suitable for parallel operation § High operating temperature § Low forward voltage drop Key Parameters = 1 800 V RRM = 1 013 I FAVm = 13 500

Contextual Info: PRELIMINARY 5SDF 0102C0400 5SDF 0102C0400 High Frequency Welding Diode Properties • High forward current capability • Low forward and reverse recovery losses  High operational reliability Applications  Welding equipment  High current application up to 10 kHz

knx wiring diagram

Abstract: electronic transformer halogen 1X58 x 2101 cf helvar SA 216 CORE electronic transformer halogen lamp D0203 F0004 electronic halogen transformer design
Contextual Info: ABB i-bus EIB / KNX 2CDC 071 013 F0005 Switch Actuator, x-fold, 10 AX, MDRC SA/S x.10.1, 2CDG 110 0xx R0011 The 10 A Switch Actuators are modular installation devices in proM design for installation in the distribution board on 35 mm mounting rails. The connection to the ABB i-bus®

5SDD10T1800

Contextual Info: 5SDD 10T1800  5SDD 10T1800 Old part no. D 806C-1010-18 Rectifier Diode Properties • Industry standard housing • Suitable for parallel operation  High operating temperature  Low forward voltage drop Key Parameters = 1 800 V RRM = 1 013 I FAVm

ABB 12 30 01

Abstract: 5SDF0102C0400 diode tfr
Contextual Info: PRELIMINARY 5SDF 0102C0400 5SDF 0102C0400 High Frequency Welding Diode Properties • High forward current capability • Low forward and reverse recovery losses  High operational reliability Applications  Welding equipment  High current application up to 10 kHz

5SDF0102C0400

Contextual Info: PRELIMINARY 5SDF 0102C0400 5SDF 0102C0400 High Frequency Welding Diode Properties • High forward current capability • Low forward and reverse recovery losses  High operational reliability Applications  Welding equipment  High current application up to 10 kHz

Contextual Info: VCE IC = = 1200 V 150 A IGBT Module LoPak4 SPT 5SNS 0150V120100 Doc. No. 5SYA1524-01 June 04 • Low-loss, rugged IGBT SPT chip-set • EMC friendly switching characteristics • Low profile compact baseless package for good power cycling • Suitable for snap-on gate-driver

Contextual Info: 5SDD 0135Z0401 5SDD 0135Z0401 Housingless Welding Diode Properties • High forward current capability • Low forward and reverse recovery losses Applications  Welding equipment  High current application up to 2 kHz Key Parameters = 400 V RRM = 13 526

A1701

Abstract: ABB 60947-7-1 ABB 1snk 505 210 r0000 c1003 D0201 IEC 60947-7-1 A1101 C1008 S0201 ABB 1snk 505 310 r0000
Contextual Info: Technical Datasheet 1SNK 161 003 D0201 20/01/10 Catalogue Page 1SNK 161 003 S0201 ZS4-D2 Screw Clamp Terminal Block Double deck Save space: - High wiring density on two decks, - Connection of conductors up to 4 mm² CB certified 12 AWG in just 5.2 mm 0.205 in spacing.

ABB thyristor 5

Abstract: 5SGA20H4502
Contextual Info: VDRM ITGQM ITSM VT0 rT VDClin = = = = = = 4500 2000 13 1.80 0.85 2200 V A kA V Gate turn-off Thyristor 5SGA 20H4502 mΩ V Doc. No. 5SYA 1210-01 Aug. 2000 • Patented free-floating silicon technology • Low on-state and switching losses • Annular gate electrode

f0208

Abstract: R1000 R9000
Contextual Info: Power supply CP-E 12/2.5 2CDC 271 013 F0t06 Primary switch mode power supply Data sheet � � � � � Features              Rated output voltage 12 V DC Output voltage adjustable via front‑face rotary potentiometer “OUTPUT Adjust”

FR 306 Diode

Contextual Info: PRELIMINARY 5SDF 0103Z0400 5SDF 0103Z0400 High Frequency Housingless Welding Diode Properties • High forward current capability • Low forward and reverse recovery losses Applications  Welding equipment  High current application up to 10 kHz Key Parameters

Contextual Info: 5SDD 0120C0200  5SDD 0120C0200 Old part no. DS 879D-12000-02 Welding diode Properties • High forward current capability • Low forward and reverse recovery losses  High operational reliability Applications  Welding equipment  High current application up to 2000 Hz

Contextual Info: 5SDD 0120C0400  5SDD 0120C0400 Old part no. DS 879D-12000-04 Welding diode Properties • High forward current capability • Low forward and reverse recovery losses  High operational reliability Applications  Welding equipment  High current application up to 2000 Hz

GTO thyristor ABB

Abstract: ABB 5SGA ABB GTO ABB thyristor 5
Contextual Info: VDRM ITGQM ITSM VT0 rT VDClin = = = = = = 2500 1500 10 1.55 0.63 1400 V A kA V Gate turn-off Thyristor 5SGA 15F2502 mΩ V Doc. No. 5SYA 1214-01 Aug. 2000 • Patented free-floating silicon technology • Low on-state and switching losses • Annular gate electrode

25H2501

Contextual Info: VDRM ITGQM ITSM VT0 rT VDClin = = = = = = 2500 2500 16 1.66 0.57 1400 V A kA V Gate turn-off Thyristor 5SGA 25H2501 mΩ V Doc. No. 5SYA1206-01 Dec. 04 • Patented free-floating silicon technology • Low on-state and switching losses • Annular gate electrode

20H2501

Abstract: 5sga20h2501
Contextual Info: VDRM ITGQM ITSM VT0 rT VDClin = = = = = = 2500 2000 16 1.66 0.57 1400 V A kA V mW V Gate turn-off Thyristor 5SGA 20H2501 Doc. No. 5SYA1205-01 Jun. 04 • Patented free-floating silicon technology · Low on-state and switching losses · Annular gate electrode

0135Z0400

Abstract: diode fr 207
Contextual Info: 5SDD 0135Z0400  5SDD 0135Z0400 Housingless Welding Diode Properties • High forward current capability • Low forward and reverse recovery losses Applications  Welding equipment  High current application up to 2 kHz Key Parameters = 400 V RRM

Contextual Info: 5SDD 0105Z0401 5SDD 0105Z0401 Housingless Welding Diode Properties • High forward current capability • Low forward and reverse recovery losses Applications  Welding equipment  High current application up to 2000 Hz Key Parameters = 400 V RRM = 10 502

A0201

Abstract: 1SNK 505 061 R0000 D0201 ABB 60947-7-1 A1701 A1101 C1003 C1008 S0201 IEC 60947-7-1
Contextual Info: Technical Datasheet 1SNK 161 001 D0201 20/01/10 Catalogue Page 1SNK 161 001 S0201 ZS4 Screw Clamp Terminal Block Feed-through Save space by connecting conductors up to 4 mm² CB certified 12 AWG in just 5.2 mm 0.205 in spacing. 48.8 1.92" 56.3 2.22" 53 2.09"

JB5-10

Abstract: A1701 IEC 60947-7-1 A1101 C1003 C1008 S0201 1SNK 900 650 R0000 D0201
Contextual Info: Technical Datasheet 1SNK 161 007 D0201 20/01/10 Catalogue Page 1SNK 161 007 S0201 ZS4-D1 Screw Clamp Terminal Block Double deck -E  ase one potential distribution on 4 independent screw clamps, - Save space by connecting conductors up to 4 mm² CB certified 12 AWG in just

0150V1

Abstract: 5SYA2017
Contextual Info: VCE IC = = 1200 V 150 A IGBT Module LoPak4 SPT 5SNS 0150V120100 Doc. No. 5SYA1524-01 Dez. 04 • Low-loss, rugged IGBT SPT chip-set • EMC friendly switching characteristics • Low profile compact baseless package for good power cycling • Suitable for snap-on gate-driver