ABB 5STP 12 Search Results

ABB 5STP 12

Contextual Info: VDSM ITAVM ITRMS ITSM VT0 rT = = = = = = 8500 V 1200 A 1880 A 35000 A 1.25 V 0.480 mΩ Ω Phase Control Thyristor 5STP 12N8500 Doc. No. 5SYA1044-02 Sep. 01 • Patented free-floating silicon technology • Low on-state and switching losses • Designed for traction, energy and industrial applications

5STP12F4240

Contextual Info: 5STP 12F4240 5STP 12F4240 Old part no. TV 918-1201-42 Phase Control Thyristor Properties § High operational capability § Possibility of serial and parallel connection Applications § Controlled rectifiers § AC drives Key Parameters V DRM, V RRM = 4 200

12M6500

Abstract: abb s 212 ABB thyristor 5 5STP12M6500
Contextual Info: VDSM ITAVM ITRMS ITSM VT0 rT = = = = = = 6500 V 1330 A 2080 A 22000 A 1.20 V 0.600 mΩ Ω Phase Control Thyristor 5STP 12M6500 Doc. No. 5SYA1004-03 Sep. 01 • Patented free-floating silicon technology • Low on-state and switching losses • Designed for traction, energy and industrial applications

08G6500

Abstract: 5STP 08G6500
Contextual Info: Key Parameters VDSM = 6500 ITAVM = 815 ITRMS = 1270 ITSM = 11600 VT0 = 1.22 rT = 0.970 V A A A V mΩ Phase Control Thyristor 5STP 08G6500 Doc. No. 5SYA 1006-02 May, 98 Features • Patented free-floating silicon technology • Low on-state and switching losses

Contextual Info: Key Parameters VDSM = 8500 ITAVM = 1150 ITRMS = 1806 ITSM = 35000 VT0 = 1.25 rT = 0.480 V A A A V mΩ Phase Control Thyristor 5STP 12N8500 Preliminary Doc. No. 5SYA 1044-01 May, 98 Features • Patented free-floating silicon technology • Low on-state and switching losses

5STP 12F4200

Contextual Info: VDSM ITAVM ITRMS ITSM VT0 rT = = = = = = 4200 V 1150 A 1800 A 15000 A 0.95 V 0.575 mΩ Ω Phase Control Thyristor 5STP 12F4200 Doc. No. 5SYA1021-03 Jan. 02 • Patented free-floating silicon technology • Low on-state and switching losses • Designed for traction, energy and industrial applications

Contextual Info: VDRM ITAVM ITRMS ITSM V T0 rT = = = = = = 2200 V 862 A 1354 A 12x103 A 1V 0.404 mΩ Ω Phase Control Thyristor 5STP 09D2201 Doc. No. 5SYA1059-01 March 03 • Low on-state and switching losses • Designed for traction, energy and industrial applications

ABB 4600

Abstract: ABB 5STP 12 5STP12F4200 5STP 12F4200
Contextual Info: Key Parameters VDSM = 4200 ITAVM = 1225 ITRMS = 1920 ITSM = 15000 VT0 = 0.95 rT = 0.575 V A A A V mΩ Phase Control Thyristor 5STP 12F4200 Doc. No. 5SYA 1021-02 April, 98 Features • Patented free-floating silicon technology • Low on-state and switching losses

12M6500

Contextual Info: Key Parameters VDSM = 6500 ITAVM = 1200 ITRMS = 1880 ITSM = 22000 VT0 = 1.20 rT = 0.600 V A A A V mΩ Phase Control Thyristor 5STP 12M6500 Doc. No. 5SYA 1004-02 May, 98 Features • Patented free-floating silicon technology • Low on-state and switching losses

Contextual Info: 5STP 12F4201 5STP 12F4201 Old part no. TV 918-1200-42 Phase Control Thyristor Properties High operational capability Possibility of serial and parallel connection Applications Controlled rectifiers AC drives Key Parameters V DRM , V RRM = 4 200 I TAVm = 1 247

12F400

Abstract: 5STP12F4201 OCT10
Contextual Info: 5STP 12F4201 5STP 12F4201 Old part no. TV 918-1200-42 Phase Control Thyristor Properties § High operational capability § Possibility of serial and parallel connection Applications § Controlled rectifiers § AC drives Key Parameters V DRM, V RRM = 4 200

Contextual Info: VDRM IT AV M IT(RMS) ITSM VT0 rT = 2800 V = 1400 A = 2210 A = 18x103 A = 0.82 V = 0.37 m Phase Control Thyristor 5STP 16F2800 Doc. No. 5SYA1022-04 May 12 Patented free-floating silicon technology Low on-state and switching losses Designed for traction, energy and industrial applications

Contextual Info: VDRM IT AV M IT(RMS) ITSM VT0 rT = 4200 V = 1150 A = 1800 A = 15x103 A = 0.95 V = 0.575 mΩ Phase Control Thyristor 5STP 12F4200 Doc. No. 5SYA1021-04 May 07 • Patented free-floating silicon technology • Low on-state and switching losses • Designed for traction, energy and industrial applications

5STP08G6500

Abstract: ABB thyristor 5
Contextual Info: VDSM ITAVM ITRMS ITSM VT0 rT = = = = = = 6500 V 760 A 1200 A 11600 A 1.22 V 0.970 mΩ Ω Phase Control Thyristor 5STP 08G6500 Doc. No. 5SYA1006-03 Sep. 01 • Patented free-floating silicon technology • Low on-state and switching losses • Designed for traction, energy and industrial applications

Contextual Info: VDSM ITAVM ITRMS ITSM VT0 rT = = = = = = 4200 V 1150 A 1800 A 15000 A 0.95 V 0.575 mΩ Ω Phase Control Thyristor 5STP 12F4200 Doc. No. 5SYA1021-03 Sep. 01 • Patented free-floating silicon technology • Low on-state and switching losses • Designed for traction, energy and industrial applications

Contextual Info: VDRM IT AV M IT(RMS) ITSM VT0 rT = 6500 V = 1370 A = 2160 A = 21.9x103 A = 1.18 V = 0.632 m Phase Control Thyristor 5STP 12K6500 Doc. No. 5SYA1069-03 Jan.11 • Patented free-floating silicon technology  Low on-state and switching losses  Designed for traction, energy and industrial applications

5STP25L5200

Abstract: 25L5200 thyristor 5STP 25L5200 5SYA1008-06
Contextual Info: VDRM IT AV M IT(RMS) ITSM VT0 rT = 5200 V = 2760 A = 4340 A = 55x103 A = 1V = 0.225 m Phase Control Thyristor 5STP 25L5200 Doc. No. 5SYA1008-06 Dec. 12 Patented free-floating silicon technology Low on-state and switching losses Designed for traction, energy and industrial applications

12N7800

Abstract: 5STP 12N7800 5SYA1044-02
Contextual Info: VDSM = 8500 V ITAVM = 1200 A ITRMS = 1880 A ITSM = 35000 A VT0 = 1.25 V rT = 0.480 mΩ Phase Control Thyristor 5STP 12N8500 Doc. No. 5SYA1044-02 Sep.00 • Patented free-floating silicon technology • Low on-state and switching losses • Designed for traction, energy and industrial applications

5STP03D6500

Abstract: abb phase control thyristors 5stp 03d6500
Contextual Info: VDRM IT AV M IT(RMS) ITSM VT0 rT = 6500 V = 380 A = 600 A = 4.5x103 A = 1.2 V = 2.3 m Phase Control Thyristor 5STP 03D6500 Doc. No. 5SYA1055-03 June 12 • Patented free-floating silicon technology  Low on-state and switching losses  Designed for traction, energy and industrial applications

Contextual Info: VDRM IT AV M IT(RMS) ITSM VT0 rT = 8500 V = 1200 A = 1880 A = 35x103 A = 1.25 V = 0.48 mΩ Phase Control Thyristor 5STP 12N8500 Doc. No. 5SYA1044-03 May 07 • Patented free-floating silicon technology • Low on-state and switching losses • Designed for traction, energy and industrial applications

Contextual Info: VDRM IT AV M IT(RMS) ITSM VT0 rT = 4200 V = 1150 A = 1800 A = 19x103 A = 0.95 V = 0.575 mW Phase Control Thyristor 5STP 12F4200 Doc. No. 5SYA1021-06 Jul 13 • Patented free-floating silicon technology · Low on-state and switching losses · Designed for traction, energy and industrial applications

5sya2020

Abstract: A125 B125 C125
Contextual Info: VDRM VDSM IT AV M IT(RMS) ITSM V(T0) rT = = = = = = = 5600 6500 1370 2160 21.9x103 1.18 0.632 V V A A A V mΩ Phase Control Thyristor 5STP 12K6500 Doc. No. 5SYA1069-01 May 04 • Patented free-floating silicon technology • Low on-state and switching losses

abb phase control thyristors

Contextual Info: V DRM I T AV M I T(RMS) I TSM V T0 rT = 6500 V = 1370 A = 2160 A = 21.9x103 A = 1.18 V = 0.632 m Phase Control Thyristor 5STP 12K6500 Doc. No. 5SYA1069-02 Aug 10 • Patented free-floating silicon technology  Low on-state and switching losses  Designed for traction, energy and industrial applications

ABB 5STP

Contextual Info: VDRM IT AV M IT(RMS) ITSM VT0 rT = 5200 V = 2537 A = 3985 A = 55x103 A = 1V = 0.225 m Phase Control Thyristor 5STP 25M5200 Doc. No. 5SYA1071-03 Dec. 12 Patented free-floating silicon technology Low on-state and switching losses Designed for traction, energy and industrial applications