ABLESTIK 190 Search Results

Ablecube

Abstract: ATM-0018 Ablestik ATM-0087 ablebond ablebond technical 8200C ATM-0089 ablebond ablestik ablestik ablebond
Contextual Info: PILOT TECHNICAL DATASHEET ABLEBOND 8200C ELECTRICALLY CONDUCTIVE DIE ATTACH ADHESIVE DESCRIPTION ABLEBOND® 8200C low bleed die attach adhesive is designed for small and medium sized dies across a variety of leadframes including PPF, Cu and Ag. This electrically conductive adhesive offers improved JEDEC

JEDEC JESD22-B116 free

Abstract: SUMIKON EME-G700 EME-G700 ablebond 3230 SUMItomo EME-G700 Sumitomo EME-G700 material Ablebond 84-1*SR4 Ablebond 8390 sumitomo G700 Tg ablebond 8390 cure time
Contextual Info: Integrated Device Technology, Inc. 2975 Stender Way, Santa Clara, CA - 95054 PRODUCT/PROCESS CHANGE NOTICE PCN PCN #: SR-0212-02 DATE: 12/20/2002 Product Affected: TSOP package family (see attachment for affected part #s). Date Effective: 3/20/2003 Contact: George Snell

Contextual Info: E l Stanford Microdevices Product Description SNA-200 Stanford Microdevices' SNA-200 is a GaAs monolithic broadband amplifier MMIC in die form. This amplifier provides !6dB of gain when biased at 50mA and 4V. DC-6.5 GHz, Cascadable GaAs MMIC Amplifier External DC decoupling capacitors determine low frequency

8361H

Abstract: CEL9200 CY7B9514V
Contextual Info: Cypress Semiconductor Qualification Report QTP# 98051 VERSION 1.0 April, 1999 ATM & SONET/SDH - SM13B Technology - Fab 2 CY7B9514V 3.3V Quad SONET Transceiver Cypress Semiconductor Quality and Reliability Department Cypress Semiconductor 3.3V Quad SONET Transceiver

84-1LMI

Abstract: NDA-310-D
Contextual Info: NDA-310-D  *D,Q3*D$V +%7 00,& ',675,%87 ' $03/, ,(5 '& 72 *+] 7\SLFDO $SSOLFDWLRQV • Narrow and Broadband Commercial and Military Radio Designs • Gain Stage or Driver Amplifiers for MWRadio/Optical Designs • Linear and Saturated Amplifiers GENERAL PURPOSE

Contextual Info: What HEWLETT mL'HM P A C K A R D B eam L ead PIN D iode Technical Data 5082-3900 Features • H igh B reak d o w n Voltage 200 V Minimum • Low C apacitance 0.02 pF Typical • R ugged C o n stru ctio n 2 grams Minimum Lead Pull • N itrid e P assiv ated

Contextual Info: e=DStanford Microdevices Product Description SNA-100 Stanford Microdevices’ SNA-100 is a GaAs monolithic broadband amplifier MMIC in die form. This amplifier provides 12dB of gain when biased at 50mA and 4V. DC-10 GHz, Cascadable GaAs MMIC Amplifier External DC decoupling capacitors determine low frequency

Dp 140c

Abstract: CY7C006 CY7C016 CY7C025 CY7C0251 JESD22 8361H
Contextual Info: Cypress Semiconductor Qualification Report QTP# 98302 VERSION 1.2 March, 1999 Dual Port SRAM - R28 Technology - Fab 2 CY7C025 8K x 16 Dual Port SRAM CY7C0251 8K x 18 Dual Port SRAM CY7C006 16K x 8 Dual Port SRAM CY7C016 16K x 9 Dual Port SRAM Cypress Semiconductor

C103 pnp

Abstract: transistor 131-G chip die npn transistor Ablestik 84-1LMIS
Contextual Info: Low Distortion, High Speed Rail-to-Rail Input/Output Amplifier AD8028-KGD-CHIP Known Good Die FEATURES High speed 190 MHz, –3 dB bandwidth G = +1 100 V/µs slew rate Low distortion 120 dBc @ 1 MHz SFDR 80 dBc @ 5 MHz SFDR Selectable input crossover threshold

Contextual Info: NDA-310-D 4 GaInP/GaAs HBT MMIC DISTRIBUTED AMPLIFIER DC TO 15GHz Typical Applications • Narrow and Broadband Commercial and • Gain Stage or Driver Amplifiers for MWRadio/Optical Designs Military Radio Designs • Linear and Saturated Amplifiers GENERAL PURPOSE

transistor 131-G

Contextual Info: Known Good Die Low Distortion, High Speed Rail-to-Rail Input/Output Amplifier AD8028-KGD-CHIPS FEATURES High speed 190 MHz, –3 dB bandwidth G = +1 100 V/µs slew rate Low distortion 120 dBc @ 1 MHz SFDR 80 dBc @ 5 MHz SFDR Selectable input crossover threshold

Ablestik 84-1LMIS

Abstract: chip die npn transistor
Contextual Info: Known Good Die Low Distortion, High Speed Rail-to-Rail Input/Output Amplifier AD8028-KGD-CHIPS FEATURES High speed 190 MHz, –3 dB bandwidth G = +1 100 V/µs slew rate Low distortion 120 dBc @ 1 MHz SFDR 80 dBc @ 5 MHz SFDR Selectable input crossover threshold

Contextual Info: • 4 4 4 7 5 6 4 D D D 1 70 1 5TD ■ H P A HEWLETT-PACKARD/ CHPNTS fj&fll H E W L E T T 1"MM PACKARD blE » Beam Lead PIN Diode Technical Data 5082-3900 Features • H igh B reak d o w n V oltage 200 V Minimum • Low C ap acitan ce 0.02 pF Typical • R ugged C o n stru ctio n

NDA-310-D

Abstract: VCC1
Contextual Info: NDA-310-D InGaP/GaAs HBT MMIC DISTRIBUTED AMPLIFIER DC TO 15GHz Typical Applications • Narrow and Broadband Commercial and • Gain Stage or Driver Amplifiers for MWRadio/Optical Designs Military Radio Designs • Linear and Saturated Amplifiers Product Description

Ablestik

Abstract: CY7C024 CY7C0241 CY7C139 CY7C144 CY7C145
Contextual Info: Cypress Semiconductor Qualification Report QTP# 98393 VERSION 1.3 March, 1999 Dual Port SRAM - R28 Technology - Fab 2 CY7C0241 4K x 18 Dual Port SRAM CY7C024 4K x 16 Dual Port SRAM CY7C145 8K x 9 Dual Port SRAM CY7C144 8K x 8 Dual Port SRAM CY7C139 4K x 9 Dual Port SRAM

NT 407 F transistor

Abstract: SNA-376 nt 407 f 100C 120C 135C 155C 84-1LMIT1 SNA-300
Contextual Info: Product Description SNA-300 Stanford Microdevices’ SNA-300 is a GaAs monolithic broadband amplifier MMIC in die form. This amplifier provides 22dB of gain when biased at 35mA and 4V. External DC decoupling capacitors determine low frequency response. The use of an external resistor allows for bias

Ablestik 84-1LMIT1 DATASHEET

Abstract: 84-1lmit1 100C 130C 155C SNA-400 SNA-476
Contextual Info: Product Description SNA-400 Stanford Microdevices’ SNA-400 is a GaAs monolithic broadband amplifier MMIC in die form. This amplifier provides 13dB of gain when biased at 70mA and 5.0V. P1dB and TOIP may be improved by 2dB by biasing @ 100mA. DC-8 GHz, Cascadable

Ablestik 84-1LMIT1

Abstract: 120C 155C 84-1LMIT1 SNA-200 SNA-276
Contextual Info: Product Description SNA-200 Stanford Microdevices’ SNA-200 is a GaAs monolithic broadband amplifier MMIC in die form. This amplifier provides 16dB of gain when biased at 50mA and 4V. External DC decoupling capacitors determine low frequency response. The use of an external resistor allows for bias

110C

Abstract: 140C 155C 84-1LMIT1 SNA-600 SNA-676 linear amplifier P1dB 36dBm
Contextual Info: Product Description SNA-600 Stanford Microdevices’ SNA-600 is a high-performance GaAs Heterojunction Bipolar Transistor MMIC in die form. A Darlington configuration is utilized for broadband performance to 6.5 GHz. DC-6.5 GHz, Cascadable GaAs MMIC Amplifier

NT1004

Abstract: Ablestik 84-1LMIT1 120C 155C 84-1LMIT1 DC-10 SNA-100 SNA-176 DB266
Contextual Info: Product Description SNA-100 Stanford Microdevices’ SNA-100 is a GaAs monolithic broadband amplifier MMIC in die form. This amplifier provides 12dB of gain when biased at 50mA and 4V. External DC decoupling capacitors determine low frequency response. The use of an external resistor allows for bias

NDA-310-D

Abstract: 84-1LMI Ablebond 190
Contextual Info: GaInP/GaAs HBT MMIC Distributed Amplifier NDA-310-D DC-15 GHz 6000048 Rev. A 1 Features Applications • • • • • • • Reliable low-cost HBT-based design 9 dB Gain, +14.8 dBm P1dB @ 2 GHz High P1dB of +15.0 dBm at 6.0 GHz and +9.4 dBm at 14.0 GHz

amplifier mmic 576

Abstract: SNA-500 SNA-576 SNA 586 datasheet 100C 130C 155C 84-1LMIT1
Contextual Info: Product Description SNA-500 Stanford Microdevices’ SNA-500 is a GaAs monolithic broadband amplifier in die form. This amplifier provides 19dB of gain when biased at 70mA and 5.0V. P1dB and TOIP may be improved by 2dB by baising @ 100mA. DC-3 GHz, Cascadable

Contextual Info: IStanford Microdevices Product Description SNA-600 Stanford M icrodevices’ SNA-600 is a high-perform ance GaAs Heterojunction Bipolar Transistor MMIC in die form. A Darlington configuration is utilized for broadband perfor­ mance to 6.5 GHz. DC-6.5 GHz, Cascadable

Contextual Info: Product Description SNA-300 Stanford M icrodevices’ SNA-300 is a GaAs m onolithic broad­ band am plifier MMIC in die form. This am plifier provides 22dB of gain when biased at 35m A and 4V. External DC decoupling capacitors determ ine low frequency response. The use of an external resistor allow s for bias