marking ACY
Abstract: transistor ACY PNP acy transistor marking ACY SOT-23
Text: 2SA1313 SOT-23-3L Transistor PNP SOT-23-3L 1. BASE 2. EMITTER 2.92 3. COLLECTOR 0.35 1.17 Features Excellent hFE Linearity : hFE(2) =25(Min)at VCE =-6V,IC=- 400mA. High Voltage :VCEO=-50V(Min) Complements the 2SC3325. 2.80 1.60 0.15 1.90 MARKING : ACO,ACY
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2SA1313
OT-23-3L
OT-23-3L
400mA.
2SC3325.
-100mA
-10mA
-20mA
-100A
marking ACY
transistor ACY PNP
acy transistor
marking ACY SOT-23
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MAX805
Abstract: MAX690CPA MAX690 MAX704 MAX802 MAX804 MAX806 MAX690_EPA
Text: 19-0243; Rev 1; 9/94 3.0V/3.3V Microprocessor Supervisory Circuits ow ind tW se Re ail r-F r we to Po ara mp ail Co r-F we acy Po ccur A ery ld att h ho res p-B itc u Sw Th ck t Ba se Re t al Inpu ut nu Ma t t se np Re se Re ✓ MAX704 ✓ MAX802 ✓ MAX804
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MAX690
MAX704
MAX802
MAX805
MAX804
MAX806
MAX805
MAX690CPA
MAX690
MAX704
MAX802
MAX804
MAX806
MAX690_EPA
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Untitled
Abstract: No abstract text available
Text: High Frequency Switch Mode Li-Ion Battery Charger ADP3804 = Preliminary Technical Data FEATURES Li -Io n Bat t er y Ch ar g er Fi x ed 12,525 V, 12.600 V, o r A d j u st ab l e Bat t er y Vo l t ag e Hi g h En d -o f -Ch ar g e Vo l t ag e A ccu r acy ؎ 0.4% @ +25
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ADP3804
P3804.
P3804
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MAX805
Abstract: MAX690CPA MAX690 MAX704 MAX802 MAX804 MAX806
Text: 19-0243; Rev 1; 9/94 3.0V/3.3V Microprocessor Supervisory Circuits ow ind tW se Re ail r-F r we to Po ara mp ail Co r-F we acy Po ccur A ery ld att h ho res p-B itc u Sw Th ck t Ba se Re t al Inpu ut nu Ma t t se np Re se Re ✓ MAX704 ✓ MAX802 ✓ MAX804
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MAX690
MAX704
MAX802
MAX805
MAX804
MAX806
MAX805
MAX690CPA
MAX690
MAX704
MAX802
MAX804
MAX806
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marking ACY
Abstract: marking ACY SOT-23 transistor ACY PNP 2SA1313 2SC3325 aco transistor acy transistor
Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23-3L Plastic-Encapsulate Transistors 2SA1313 SOT-23-3L TRANSISTOR PNP FEATURES z Excellent hFE Linearity : hFE(2) =25(Min)at VCE =-6V,IC=- 400mA. z High Voltage :VCEO=-50V(Min) z Complements the 2SC3325.
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OT-23-3L
2SA1313
OT-23-3L
400mA.
2SC3325.
-100A
-100mA
-400mA
-100mA
-10mA
marking ACY
marking ACY SOT-23
transistor ACY PNP
2SA1313
2SC3325
aco transistor
acy transistor
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MAX6511
Abstract: marking ACY MAX6511UT065-T MAX6512 MAX6513 MAX6613 Aaoi marking marking code acw dfn AAPK
Text: 19-1819; Rev 2; 10/04 Low-Cost, Remote SOT Temperature Switches The MAX6511/MAX6512/MAX6513 are fully integrated, remote temperature switches that use an external P-N junction typically a diode-connected transistor as the sensing element to measure the remote temperature.
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MAX6511/MAX6512/MAX6513
MAX6511
MAX6513
MAX6512
T1433-1
T1433-2
marking ACY
MAX6511UT065-T
MAX6613
Aaoi marking
marking code acw dfn
AAPK
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marking code acw
Abstract: marking ACY SOT23-6 MARKING ada MAX6511
Text: 19-1819; Rev 2; 10/04 Low-Cost, Remote SOT Temperature Switches The MAX6511/MAX6512/MAX6513 are fully integrated, remote temperature switches that use an external P-N junction typically a diode-connected transistor as the sensing element to measure the remote temperature.
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MAX6511/MAX6512/MAX6513
MAX6511
MAX6513
MAX6512
T1433-2
marking code acw
marking ACY
SOT23-6 MARKING ada
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HY 1201
Abstract: No abstract text available
Text: MCP9509/10 Resistor-Programmable Temperature Switches Features Description • • • • Microchip Technology’s MCP9509/10 devices are programmable logic output temperature switches. The temperature switch threshold can be programmed with a single external resistor, which provides high design
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MCP9509/10
MCP9509/10
MCP9509
MCP9510
DS22114A-page
HY 1201
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Newmarket Transistors
Abstract: NKT Semiconductors Newmarket nkt NKT216 2N1305 NKT213 2N1309 germanium transistors NPN ACY21 OC72
Text: N ew m arket Sem iconductors Germanium A lloy Transistors P N P Germanium A llo y Transistors REFERENCE T A B LE Maximum ratings. C haracteristics at T 4 = 25°C. Code ACY ACY ACY ACY ACY ACY ACY ACY 17 18 19 20 21 22 39 40 BVC eo BVcao BV ebo IcM V V V A
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27714R
27716E
27717C
7718A
27719X
27710F
15627E
15628C
5629A
15631B
Newmarket Transistors
NKT Semiconductors
Newmarket nkt
NKT216
2N1305
NKT213
2N1309
germanium transistors NPN
ACY21
OC72
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IAO5 Sharp
Abstract: free transistor equivalent book 2sc siemens transistor asy 27 Diode BAY 61 TRANSISTOR BJ 131-6 tesla typ 202 thyristor Tesla z1072 HALL EFFECT 21E z1071
Text: SIEM EN S Semiconductor Manual Discrete Industrial Types 1974 ACY 23, ACY 32 PNP Transistors for AF pre-stages The ACY 23 and ACY 32 are alloyed germanium PNP transistors in the case 1 A 3 DIN 41871 sim. TO -1 . The leads are electrically insulated from the case. The
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Q60103-
thS10
to3530
to4600
to4600
IAO5 Sharp
free transistor equivalent book 2sc
siemens transistor asy 27
Diode BAY 61
TRANSISTOR BJ 131-6
tesla typ 202 thyristor
Tesla
z1072
HALL EFFECT 21E
z1071
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103MA
Abstract: Q62901-B1 transistor ACY PNP Q60103-Y32-F ACY 23 V legiert
Text: ACY 23 ACY 32 PIVIF’-Transistoren fü r NF-Vorstufen ACY 23 und ACY 32 sind legierte PNP-Germanium-Transistoren im Gehäuse 1 A 3 DIN 41 871 TO-1 ähnl. . Die Anschlüsse sind vom Gehäuse elektrisch isoliert. Der Kollektoranschluß wird mit einem roten Punkt am Gehäuserand gekennzeichnet. Die Transistoren sind besonders
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Q60I03-Y23-E
Q60I03-Y23-F
Q60130-Y32-E
Q60103-Y32-F
Q62901-B1
/ACY32
101mA
103MA
Q62901-B1
transistor ACY PNP
Q60103-Y32-F
ACY 23 V
legiert
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transistor ACY PNP
Abstract: acy transistor AF200 transistor W1A germanium af transistors Germanium Transistor hfcf 5101B AMB2560 ACY23
Text: ACY 23, ACY 32 PNP Transistors for AF pre-stages The ACY 23 and ACY 32 are alloyed germanium PNP transistors in the case 1 A 3 DIN 41871 sim. TO -1 . The leads are electrically insulated from the case. The collector terminal is indicated by a red dot on the case rim. The transistors are designed
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Q60103-
thS10
transistor ACY PNP
acy transistor
AF200
transistor W1A
germanium af transistors
Germanium Transistor
hfcf
5101B
AMB2560
ACY23
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transistor k520
Abstract: IC K520 transistor ACY PNP acy transistor 1518 B TRANSISTOR ACY23 ACY23V ACY32 Q60103-Y23-E Q60103-Y23-F
Text: 2SC D 023SbGS GGOMOMl H M S I E G • , _ PNP Transistors for AF Input Stages SIEMENS AKTIENGESELLSCHAF ACY 23 15C 04041 D f t C YA 2 ACY 23 and ACY 32 are alloyed germanium PNP transistors in 1 A 3 DIN 41871 case similar to TO-1 . All leads are electrically insulated from the case. The collector terminal
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ACY32
Q60103-Y23-E
Q60103-Y23-F
Q60103-Y32-E
Q60103-Y32-F
Q62901-B1
fl23SbOS
QQQ404b
ACY23
transistor k520
IC K520
transistor ACY PNP
acy transistor
1518 B TRANSISTOR
ACY23V
ACY32
Q60103-Y23-E
Q60103-Y23-F
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101F
Abstract: ACY23 ACY23V ACY32 ACY32V Q60103-Y23-E Q60103-Y23-F Q60103-Y32-E Q60103-Y32-F Q62901-B1
Text: 2SC D • 023SbOS 0004041 4 PNP Transistors for AF Input Stages SIEMENS AKTIENGESELLSCHAF ISIE6 1 5C 04041 D ACY23 ACY32 ACY 23 and ACY 32 are alloyed germanium PNP transistors in 1 A 3 DIN 41871 case similar to T0-1 . All leads are electrically insulated from the case. The collector terminal
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00QMQ41
ACY23
ACY32
Q60103-Y23-E
Q60103-Y23-F
Q60103-Y32-E
Q60103-Y32-F
Q62901-B1
fl23SbQS
000404b
101F
ACY23V
ACY32V
Q62901-B1
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Funkamateur
Abstract: zeilentransformator thyristor BT Germanium drossel funktionsgenerator ScansUX974 Hallgenerator tonkopf BT thyristor
Text: Fach abkürzungen Russisch 1 FUNKAMATEUR-lnformation Russische Abkürzungen auf dem G ebiet der Elektrotechnik/Elektronik und ihre deutsche Bedeutung A ABK ABM ABT AHM AHY AK AM AM AM AH AOM AI1B A nn A II^ M APr o APK APM APH APn APC A py Apy APJI Acy
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GP500
Abstract: ACY33 bnsu germanium af transistors Germanium Transistor transistor ACY PNP
Text: ACY33 PIMP Transistor fo r A F-driver and pow er stages The ACY 33 is a germanium PNP alloyed transistor in a case 1 A 3 DIN 41871 similar TO —1 . All leads are electrically insulated from the case. The collector terminal is indicated by a red dot on the rim of the case.
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ACY33
ACY33
--Y33
Q60103
GP500
bnsu
germanium af transistors
Germanium Transistor
transistor ACY PNP
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NKT275
Abstract: OC75 OC81DN OC72 OC78 NKT213 germanium transistors PNP oc75 oc76 ACY35 nkt 275
Text: PNP Germanium Transistors PNP Germanium A F Alloy Transistors in T 0 1 metal case Common Characteristics fr Vc£ Cob <VC B = 6 V , \E = 0 •6 V , lc = 1mA) 1 MHz Characteristics at T amb = 2 5 °C Maximum ratings Type Low Noise Types 40 pF B V C fO V B V CSO
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nkt 110/12
Abstract: ACY39 NKT221 germanium transistors PNP NKT 90 ACY20 ma902 ACY41 026 pnp
Text: PNP Germanium Transistors PN P Germanium A F A llo y Transistors in T 0 5 metal case fr <vce~ 6V-'c 1 m A Com m on Characteristics Type A C Y 18 19 20 21 22 39 A C Y 40 A C Y 41 A C Y 44 NKT221 N K T 222 N K T 223 N K T 224 N K T 225 N K T 226* N K T 227
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kt420
Abstract: ac176 CV7002 bc109 Transistor Equivalent list BSY95A diffused alloy BC146 BCY70 asy26
Text: Introduction This summary contains abridged information on the range of NKT semiconductor products, and the five main product groups are listed below. a HYBRID MICROCIRCUITS b) SILICON TRANSISTORS c) DIODES AND ANCILLIARY DEVICES d) GERMANIUM TRANSISTORS
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ksd 302 250v, 10a
Abstract: irf 5630 transistor 2SB 367 IRF 3055 AC153Y transistor ESM 2878 TIP 43c transistor 2sk116 bf199 bd643
Text: 5 transistor 1 A-Z datenlexikon data dictionary lexique de donnees enciclopedia dati lexicon de datos vergleichstabelle comparison table table d'equivalence tabella comparativa tabla comparativa ISBN 3-927486-00-0 Dieses Buch ist hinterlegt und urheberrechllich geschutzt. Alle
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CB-F36c
2SD1642
2SD2182,
2SC4489,
-08S-
ksd 302 250v, 10a
irf 5630
transistor 2SB 367
IRF 3055
AC153Y
transistor ESM 2878
TIP 43c transistor
2sk116
bf199
bd643
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Transistor 2SA 2SB 2SC 2SD
Abstract: 2SK596 2SC906 2SA1281 bup 3130 C3885A 2sd103 2SA1379 34d 937 086 bfq59
Text: cD/ transistor 2 0-u datenlexikon data dictionary lexique de donnees enciclopedia dati lexicon de datos vergleichstabelle comparison table table d'equivalence tabella comparativa tabla comparativa ISBN 3-927486-01-9 Dieses Buch ist hinterlegt und urheberrechtlich geschutzt. Alle
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transistor vergleichsliste
Abstract: OC44 AD149 ASZ16 siemens transistor asy 27 AF124 ASZ15 GD241 transistor gc301 AC125F
Text: TRANSISTOR VERGLEICHSLISTE Teil 1: G erm anium transistoren ra d io -television T ran sistorvergleichsliste T eil 1 : G erm anium transistoren TRANSISTOR V E R G L E I C H S LI S T E T eil 1: G erin an iu u itran sisto ren M IL IT Ä R V E R L A G D E R D E U T S C H E N D E M O K R A T IS C H E N
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Untitled
Abstract: No abstract text available
Text: HFA1113 S e m iconductor September 1998 850MHz, Low Distortion, Output Limiting, Programmable Gain, Buffer Amplifier The HFA1113 is a high speed Buffer featuring user programmable gain and output limiting coupled with ultra high speed performance. This buffer is the ideal choice for
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HFA1113
850MHz,
HFA1113
1600nm
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Untitled
Abstract: No abstract text available
Text: HFA1113 Semiconductor Data Sheet February 1999 850MHz, Low Distortion, Output Limiting, Programmable Gain, Buffer Amplifier The HFA1113 is a high speed Buffer featuring user programmable gain and output limiting coupled with ultra high speed performance. This buffer is the ideal choice for
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HFA1113
850MHz,
HFA1113
1-800-4-HARRIS
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