AD 142 TRANSISTOR Search Results

AD143

Abstract: ad148 ASZ1015 Germanium Power Devices
Contextual Info: GERMANIUM POWER TRANSISTORS PRO ELECTRON TYPES CURRENT C A IN at Type Number ^ 1*0 V ^ CEO y Y ebo y max 32 32 32 - 64 64 64 80 80 50 50 50 32 40 40 40 55 22 22 22 55 80 40 32 32 50 50 50 35 26 26 30 30 32 32 100 100 100 A D Y 10 ADY11 A D Y 12 AD Y13 A D Y 20

AD149

Abstract: ASZ18 ASZ15 ASZ1015 ASZ16 ADY26 AD148 ASZ1018 AD133 ASZ17
Contextual Info: GERMANIUM POWER TRANSISTORS PRO ELECTRON TYPES CURRENT C A IN at R. j-case °C !W max Outlines 0.35 0.35 0.35 0.35 0.35 0.35 1.5 1.5 1.5 1.5 1.5 1.5 127 127 127 127 127 127 A D 130— 111 — IV —V A D 131— III — IV — V 1 1 5 5 5 0.35 0.35 0.3 0.3

Contextual Info: SIEMENS SIPMOS Power Transistor • • • N channel Enhancement mode Avalanche-rated Type ^DS ¡0 11DS on BUZ 78 800 V 1.5 A 9.0 £2 Maxim um Ratings Parameter Continuous drain current, Tc = 25 'C Pulsed drain current, Tc = 25 °C Avalanche current, limited by Timax

Contextual Info: *SYNERGY UNIVERSAL SYSTEM ELEMENT USE SY1BPOO SEMICONDUCTOR DESCRIPTION FEATURES • Highest density logic via unique 6-transistor cell: + greatest functionality per unit area + shortest propagation delays ■ 888 core cells yield up to 1,665 routeable

SY2BP

Abstract: SY2BP00
Contextual Info: *SYNERGY UNIVERSAL SYSTEM ELEMENT USE SEMICONDUCTOR FEATURES SY2BP00 DESCRIPTION Highest density logic via unique 6-transistor cell: + greatest functionality per unit area + shortest propagation delays 2,184 core cells yield up to 3,640 routeable (equivalent) gates or 242 0-type flip-flops

Contextual Info: -Ætttrun Ä \Y Ä [L VERY HIGH VOLTAGE, FAST SWITCHING Devices. Inc. NPN TRIPLE DIFFUSED PLANAR POWER TRANSISTOR CHIP NUM BER (FORMERLY 42 CONTACT METALLIZATION B ase a n d emitter: > 30,000 A Aluminum Collector: Gold (Polished silicon or "C hrom e Nickel S ilver" also available)

JAN2N5157

Abstract: 2N54
Contextual Info: 8 3 6 8 6 0 2 SOL ITRON D E V I C E S INC lF|ä3bflbDS 95D 02851 OOOHfiSl b D |~ T - 3 3 ~ n -JtoUtran ra O M C T ÄTTÄIL ^ Devices, Inc. V E R Y HIGH VOLTAGE, FAST SW ITCHING NPN TRIPLE DIFFUSED PLANAR POW ER TRANSISTOR FORMERLY 42 CHIP N U M BER ¿1

sot-23 MARKING CODE ZA

Abstract: b0808 BCB47B BCB17-16 marking za sot89 2SB0151K marking k5 sot89 SOT 86 MARKING E4 n33 SOT-23 10Y sot-23
Contextual Info: SURFACE-MOUNTED DEVICE MARKINGS Because of their smali size, it's not possible to show types/ values on most surface-mounted components. The following tables show the code markings used to identify most common surface-mounted transistors and diodes. Note that the same

lad1 relay

Abstract: PICMG 3.0 Revision 2.0 plx 9054 plx 9030 fet data book free download 9656BA vhdl code for pci 9056 pci slot pinout 1542H plx 9052
Contextual Info: PCI 9656BA Data Book PCI 9656BA Data Book Version 1.0 March 2003 Website: Technical Support: Phone: FAX: http://www.plxtech.com http://www.plxtech.com/support/ 408 774-9060 800 759-3735 408 774-2169 2003 PLX Technology, Inc. All rights reserved. PLX Technology, Inc., retains the right to make changes to this product at any time, without notice. Products may

PCI 9054 Detailed Technical Specifications

Abstract: 1LD5 3LA-28 pci9656-ba pci plx 9656 plx 9656 PICMG 3 advancedtca specification PCI 9056 Detailed Technical Specifications PCI 9656-BA66BI
Contextual Info: PCI 9656BA Data Book PCI 9656BA Data Book Version 1.1 October 2003 Website: Technical Support: Phone: FAX: http://www.plxtech.com http://www.plxtech.com/support/ 408 774-9060 800 759-3735 408 774-2169 2003 PLX Technology, Inc. All rights reserved. PLX Technology, Inc., retains the right to make changes to this product at any time, without notice. Products may

LF 13471

Abstract: UFN140
Contextual Info: UNITRODE CORP 9347963 U N I T R O D E CORP 92D 10612 07^ $f-/ 5 POWER MOSFET TRANSISTORS ¡j^jjo 100 Volt, 0.085 Ohm N-Channel UFN142 UFN143 FEATURES • Fast Switching • Low Drive Current • Ease of Paralleling • No Second Breakdown • Excellent Temperature Stability

BFX85

Abstract: 8FX85 BFX84 BFX86 F016 ferranti
Contextual Info: »* <JS t ^NPN*' BFX84 BFX85 BFX86 ' Silicon planar medium power transistors 4 ZeTeX T h e B FX84 series o f tra n s is to rs is d esig n ed f o r sm all a n d m e d iu m sig nal, lo w and m e d iu m p o w e r a m p lific a tio n s a n d fo r g e n e ra l p u rp o se

HXTR-3685

Abstract: HXTR-3686 HXTR3685 HXTR 3685
Contextual Info: Whpì HEWLETT ll'/ U PACKARD Low Cost General Purpose Transistors Technical Data HXTR-3685 HXTR-3686 F eatures HXTR-3685 HXTR-3686 HXTR-3685 « Low Noise Figure: 1.8 dB Typical at 1 GHz • High Gain: 16.4 typ ical at 1 GHz at Noise Figure Bias • Low Cost Plastic Package

2SC2340

Abstract: NE568 MR 6500 BM74 2SC2339 NE56800 NE56803 NE56853 NE56854 NE56857
Contextual Info: NEC/ □427414 0001323 4 1SE D CALIFORNIA r-3 3 -c s NPN MEDIUM POWER MICROWAVE TRANSISTOR NE568 SER IES FEATURES DESCRIPTION AND APPLICATIONS • H IG H fs : 4.2 GHz The NE568 series of NPN silicon medium power transistors is designed for medium power S and C band linear amplifiers

vhdl code for pci 9056

Abstract: 1LD5 PCI9056 PCI 9056 Detailed Technical Specifications
Contextual Info: PCI 9056BA Data Book PCI 9056BA Data Book Version 1.1 October 2003 Website: Technical Support: Phone: Fax: http://www.plxtech.com http://www.plxtech.com/support/ 408 774-9060 800 759-3735 408 774-2169 2003 PLX Technology, Inc. All rights reserved. PLX Technology, Inc., retains the right to make changes to this product at any time, without notice. Products may

PCI9056

Abstract: 1LD5 PCI9030 3LD27 pci plx 9080 vhdl code for pci 9056
Contextual Info: PCI 9056BA Data Book PCI 9056BA Data Book Version 1.0 April 2003 Website: Technical Support: Phone: Fax: http://www.plxtech.com http://www.plxtech.com/support/ 408 774-9060 800 759-3735 408 774-2169 2003 PLX Technology, Inc. All rights reserved. PLX Technology, Inc., retains the right to make changes to this product at any time, without notice. Products may

TIP142

Abstract: TIP142 morocco TIP147 morocco TIP140 TIP141 TIP147 TIP147 TO-218 TIP145 TIP146
Contextual Info: TIP140/141/142 TIP145/146/147  COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS • ■ ■ ■ TIP141, TIP142, TIP145 AND TIP147 ARE STMicroelectronics PREFERRED SALESTYPES COMPLEMENTARY PNP - NPN DEVICES MONOLITHIC DARLINGTON CONFIGURATION INTEGRATED ANTIPARALLEL

MGW21N60ED

Contextual Info: MOTOROLA Order this document by MGW21N60ED/D SEMICONDUCTOR TECHNICAL DATA Preliminary Data Sheet MGW21N60ED Insulated Gate Bipolar Transistor N–Channel Enhancement–Mode Silicon Gate This Insulated Gate Bipolar Transistor IGBT is co–packaged with a soft recovery ultra–fast rectifier and uses an advanced

MGW21N60ED

Contextual Info: MOTOROLA Order this document by MGW21N60ED/D SEMICONDUCTOR TECHNICAL DATA Designer's  Data Sheet MGW21N60ED Insulated Gate Bipolar Transistor N–Channel Enhancement–Mode Silicon Gate This Insulated Gate Bipolar Transistor IGBT is co–packaged with a soft recovery ultra–fast rectifier and uses an advanced

rkm 33 transistor

Abstract: bkd transistor DTD133HKA BKD C6 DTB133HKA Transistor BJD 2SA1885 rkm 20 transistor 2SC5274 rkm transistor
Contextual Info: Transistors Abbreviated label symbols on mini molded type Abbreviated label symbols on mini molded type •E M T 3 and UMT3 labels On general transistors, the product and hpE rank are in­ dicated by 2 or 3 letters. On digital transistors, the product type is indicated by a 2-digit number.

bs170

Abstract: 5K02 MARKING BS
Contextual Info: SIEMENS BS 170 SIPMOS Small-Signal Transistor • N channel • Enhancement mode • Logic Level • ^GS th = 0.8.2.0V 5 VPT05158 Pin 1 Pin 2 S Type VDS b BS 170 60 V 0.3 A Type BS 170 BS 170 Ordering Code Q67000-S061 Q67000-S076 Pin 3 G ^DS(on) Package

MMBR951L

Abstract: BR951L MRF951 mrf9511l
Contextual Info: MOTOROLA SEM ICO NDUCTOR TECHNICAL DATA MRF951 M M BR951L M RF9511L The RF Line NPN Silicon Low Noise, High-Frequency Transistors Iq = 100 mA LOW NOISE HIGH FREQUENCY TRANSISTORS . . . d e sig ned for u se in high gain, lo w n o ise sm all-signal am p lifiers. This series features

rkm 33 transistor

Abstract: g1k bc848b rkm transistor DTB133HKA DTD133HKA MMST8598 TRANSISTOR MARKING CODE R2A rkm 35 transistor 2SA1885 marking W8 transistor
Contextual Info: Abbreviated markings on mini-mold transistors Transistors Abbreviated markings on mini-mold transistors !MPT3 labels The label on the MPT3 packages indicates the product, hFE rank, and month of manufacture using 4 letters. Codes B and AF indicate products.

IGBT 50 amp 1000 volt

Abstract: MGP20N60U
Contextual Info: MOTOROLA Order this document by MGP20N60U/D SEMICONDUCTOR TECHNICAL DATA Product Preview MGP20N60U Insulated Gate Bipolar Transistor N–Channel Enhancement–Mode Silicon Gate This Insulated Gate Bipolar Transistor IGBT uses an advanced termination scheme to provide an enhanced and reliable high