AD 161 TRANSISTOR Search Results

decodeur

Abstract: tda 1025 demodulateur tda1057 regulateur de tension tda 1057 "PAL Decoder" modulateur de couleur 8A35
Contextual Info: CB-179 T0-116 CB-161 CB-2 T.V. R ad io (continued) Radio T. V. (suite) A pplication s Ap plicatio n s Type Type S uffix Suffixe Case B oîtie r 2 CB-161 Temperature compensated fixed voltage regulator Régulateur de tension fixe com ­ pensé en température

AD162

Abstract: AD161 ad 162 AD 161 valvo transistoren valvo AD-161 germanium transistoren ScansUX7 ad161ad
Contextual Info: AD 162 GERMANIUM - PNP - NF - LEISTUNGSTRANSISTOR für Endstufen, als Transistorpaar für Gegentakt-B-Schaltungen, mit AI 161 als komplementäres Paar Mechanische Daten: GehKuse: Metal1 9 A 2 nach DIN 41875 Der Kollektor ist mit dem Metal1gehäuse 1e itend verbunden.

AD161

Abstract: ad 161 AD162 Valvo Aa valvo transistoren valvo ad 162 AD-161 lastwiderstand-zulassig ScansUX7
Contextual Info: AD 161 G E R M A N I U M ~ NF N - NF - L E I S T U N G S T R A N S I S T O R f/Ir Ends t u f e n , Mechanische mit A D 162 als k o m p l e m e n t S r e s Daten: Gehffuse: Metall 9 A 2 n ach D I N 41 max. 8,9 10,3 *Q6 875 * D e r K o l l e k t o r ist mit

fmr461

Contextual Info: REJ09B0019-0091Z R8C/10 Group 16 Hardware Manual RENESAS 16-BIT SINGLE-CHIP MICROCOMPUTER M16C FAMILY / R8C /Tiny SERIES Preliminary Before using this material, please visit our website to confirm that this is the most current document available. Rev. 0.91

ad 161 transistor

Contextual Info: Advanced Technical Information High Voltage, High Gain IXBH 16N170 IXBT 16N170 TM BIMOSFET Monolithic Bipolar MOS Transistor VCES = 1700 V = 25 A IC25 VCE sat = 3.3 V Symbol Test Conditions Maximum Ratings VCES T J = 25°C to 150°C 1700 V VCGR T J = 25°C to 150°C; RGE = 1 MΩ

752 J 1600 V CAPACITOR

Abstract: 16N170 BiMOSFET
Contextual Info: Advanced Technical Information High Voltage, High Gain IXBH 16N170 IXBT 16N170 TM BIMOSFET Monolithic Bipolar MOS Transistor VCES = 1700 V = 25 A IC25 VCE sat = 3.3 V Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 1700 V VCGR TJ = 25°C to 150°C; RGE = 1 MW

Contextual Info: Advanced Technical Information High Voltage, High Gain IXBH 42N170 IXBT 42N170 TM BIMOSFET Monolithic Bipolar MOS Transistor VCES = 1700 V = 75 A IC25 VCE sat = 3.3 V Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 1700 V VCGR TJ = 25°C to 150°C; RGE = 1 MW

42N170

Contextual Info: Advanced Technical Information High Voltage, High Gain IXBH 42N170 IXBT 42N170 TM BIMOSFET Monolithic Bipolar MOS Transistor VCES = 1700 V IC25 = 75 A VCE sat = 3.3 V Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 1700 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ

16N170

Contextual Info: Advanced Technical Information High Voltage, High Gain IXBH 16N170A IXBT 16N170A TM BIMOSFET Monolithic Bipolar MOS Transistor VCES IC25 VCE sat tfi(typ) Symbol Test Conditions Maximum Ratings VCES T J = 25°C to 150°C 1700 V VCGR T J = 25°C to 150°C; RGE = 1 MΩ

16N170A

Abstract: diode 22 161 smd
Contextual Info: Advanced Technical Information High Voltage, High Gain IXBH 16N170A IXBT 16N170A TM BIMOSFET Monolithic Bipolar MOS Transistor VCES IC25 VCE sat tfi(typ) Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 1700 V VCGR TJ = 25°C to 150°C; RGE = 1 MW

capacitor 0,1 mF 50V

Abstract: 2.4 ghz 2 WATTS POWER AMPLIFIER SCHEMATIC DIAGRAM G200 2000 watts power amplifier circuit diagram
Contextual Info: PTF 10137 12 Watts, 1.0 GHz GOLDMOS Field Effect Transistor Description The PTF 10137 is a 12 Watt LDMOS FET intended for large signal amplifier applications to 1.0 GHz. It operates at 60% efficiency with 18 dB of gain. Nitride surface passivation and full gold metallization

transistor buz 36

Abstract: transistor buz 19 BUZ11 transistor buz 10 al p80 transistor transistor buz 11 C67078-S1330-A3 transistor buz 90 BUZ 140 L
Contextual Info: SIEM ENS SIPMOS Power Transistor • • • • BUZ 11 AL N channel Enhancement mode Logic Level Avalanche-rated Type VDS /d •^DS on Package 1> Ordering Code BUZ 11 AL 50 V 26 A 0.055 Q TO-220 AB C67078-S1330-A3 Maximum Ratings Parameter Symbol Values

FZH 161

Abstract: FZH 111 FZH 181 transistor I 17-13 0773 CBC 184 transistor FZH 175 S3230 FZH 165 FZH 165 b fzh 171
Contextual Info: What HEWLETT wHHM P A C K A R D 4.8 V NPN Common Em itter Medium Power Output Transistor Technical Data AT-31625 Features • 4.8 Volt Operation • +28.0 dBm Pout @ 900 MHz, Typ. MSOP-3 Surface Mount Plastic Package Outline 25 • 70% C ollector Efficiency

mdd 1051

Abstract: circuit k 3683 916c Transistors marking WZ ke marking transistor transistor xl 3001 S9614
Contextual Info: . . . . . . . .l: :;. . . . . . . . . . . . . . . . . .’. . . . . . . . MIIA3.1950W9B 12 Ne.rch 1970 SUPERSEDING MIL.T.1950W9A 12 hub? 19s9 MSLITARY SPfXfFffXTfON .-. SFADCONDUCTOR DEVICE, TRANSISTOR, PNP, GBfMi14NIUM, HIGH-FREQUENCY

MUNICH256 - PEB 20256

Abstract: 20256 ram munich256 hdlc PEF 20256 DD25 MUNICH256 NC20 NC22 NC24 PEF 20256 E
Contextual Info: Data Sheet, DS2, April 2001 MUNICH256 Multichannel Network Interface Controller for HDLC/PPP PEB 20256 E Version 2.1 Datacom N e v e r s t o p t h i n k i n g . Edition 04.2001 Published by Infineon Technologies AG, St.-Martin-Strasse 53, D-81541 München, Germany

Contextual Info: ZETEX ZXT12N20DX SuperS0T4 DUAL 20V NPN SILICON LOW SATURATION SWITCHING TRANSISTOR SUMMARY Vceo=20V; Rsat = 40m il; lc= 3.5A DESCRIPTION T his n e w 4th g e n e ra tio n u ltra lo w sa tu ra tio n tra n s is to r u tilise s th e Z ete x m a trix s tru c tu re c o m b in e d w ith ad va nce d a sse m b ly te c h n iq u e s to give

UFN150

Abstract: UFN152
Contextual Info: UFN150 UFN151 UFN152 UFN153 POWER MOSFET TRANSISTORS 100 Volt, 0.055 Ohm N-Channel FEATURES • Fast Switching • Low Drive Current • Ease of Paralleling • No Second Breakdown • Excellent Temperature Stability DESCRIPTION The Unitrode power MOSFET design utilizes the most advanced technology available.

30n50 mosfet

Abstract: DSE119-06AS VM0400-02F MCC SMD DIODE 300-06DA smd43 35-06AS 500-06DA 250-12DA mosfet p channel
Contextual Info: Contents Insulated Gate Bipolar Transistors IGBT Package style vCES Tc = 2S°C 2. TO-247 SMD 1a. TO-263AA 2a. TO-247 SMD Page A V 1 600 20 48 3.0 2.7 3 600 60 2.5 2 600 75 2.7 1 600 20 20 2.5 3.0 600 48 60 60 2.7 2.9 2.5 600 16 25 16 2.5 600 48 2.7 7 600

2.4 ghz 5 WATTS POWER AMPLIFIER SCHEMATIC DIAGRAM

Abstract: 2.4 ghz 2 WATTS POWER AMPLIFIER SCHEMATIC DIAGRAM G200 2.4 ghz 4 WATTS POWER AMPLIFIER SCHEMATIC DIAGRAM
Contextual Info: PTF 10147 10 Watts, 1.0 GHz GOLDMOS Field Effect Transistor Description • The PTF 10147 is a 10 Watt LDMOS FET intended for large signal amplifier applications to 1.0 GHz. It operates at 58% efficiency and 16.5 dB of gain. Nitride surface passivation and full gold metallization

2222A

Contextual Info: Who1 PHAECWKLAERTDT mLKM 4.8 VNPN Common Emitter Medium Power Output Transistor Ifechnical Data AT-31625 Features • 4.8 V olt O peration • +28.0 dBm P, U @ 900 MHz, Typ* MSOP-3 Surface Mount Plastic Package O utline 25 • 70% C ollector E fficiency @ 900 MHz, Typ.

Contextual Info: PTF 10136 6 Watts, 1.0 GHz GOLDMOS Field Effect Transistor Description • The PTF 10136 is a common source N-channel enhancement-mode lateral MOSFET intended for large signal amplifier applications to 1.0 GHz. It is rated at 6 watts power output. Nitride surface passivation and

G200

Contextual Info: PTF 10136 6 Watts, 1.0 GHz GOLDMOS Field Effect Transistor Description • The PTF 10136 is a 6 Watt LDMOS FET intended for large signal amplifier applications to 1.0 GHz. It operates at 57% efficiency with 19 dB of gain. Nitride surface passivation and full gold metallization

Contextual Info: 32E D • Ô S 3 b 3 2 Q Q ü l 7 QSb 0 H S I P . N P N Silicon RF Transistor BFS 17P S I E M E N S / SPCL-, S E M I C O N D S r ~ 31 _ • For broadband amplifiers up to 1 GHz at collector currents from 1 to 20 mA. 6 CECC-type available: CECC 50002/262.

MRF947RT3

Abstract: z149 MRF947AT1
Contextual Info: MOTOROLA Order this document by MMBR941LT1/D SEMICONDUCTOR TECHNICAL DATA The RF Line NPN Silicon Low Noise, H igh-Frequency Transistors D esigned for use in high gain, lo w noise s m a ll-s ig n a l am plifiers. T his series fea tu res e xce lle n t b ro ad ban d linearity and is offere d in a v a rie ty o f packages.