ADC 2300 E Search Results

Contextual Info: Freescale Semiconductor Technical Data Document Number: MRF8P23080H Rev. 1, 11/2010 RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs Designed for W-CDMA and LTE base station applications with frequencies from 2300 to 2620 MHz. Can be used in Class AB and Class C for all typical

Contextual Info: Freescale Semiconductor Technical Data Document Number: MRF8S23120H Rev. 0, 11/2010 RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs MRF8S23120HR3 MRF8S23120HSR3 Designed for LTE base station applications with frequencies from 2300 to

j350 TRANSISTOR

Contextual Info: Freescale Semiconductor Technical Data Document Number: MHT1006N Rev. 0, 5/2014 RF Power LDMOS Transistor N-Channel Enhancement-Mode Lateral MOSFET RF power transistor suitable for industrial heating applications from 728 to 2700 MHz. Device is capable of both CW and pulse operation.

CRYDOM d2440

Abstract: 956 relay 24 D2415 D2415-C DC300S15-C 956 relay A2440 A2415-C A2440-C D2440-C
Contextual Info: Form C SOLID STATE RELAY, 6Adc, 15Adc, 15Aac, 40Aac AC OR DC OUTPUT & DC OR DRY SWITCH CONTROL CRYDQM M O D EL N U M B ER S • True Break-Before-Make Solid State Relay • LED Indicators • Internal Snubber Network Provided • Opto-lsolated Input Circuits

Contextual Info: Freescale Semiconductor Technical Data Document Number: MRF8P23160WH Rev. 0, 12/2011 RF Power Field Effect Transistors MRF8P23160WHR3 MRF8P23160WHSR3 N-Channel Enhancement-Mode Lateral MOSFETs Designed for base station applications with wide instantaneous bandwidth

Contextual Info: Enabling the Mobile Experience High Performance RF for wireless infrastructure Unleash the performance of your RF and microwave designs www.nxp.com/unleash-rf Enabling the Mobile Experience The future is mobile. And mobility means the freedom to innovate, communicate, connect and win.

Contextual Info: Form C SOLID STATE RELAY, 6Adc, 15Adc, 15Aac, 40Aac AC OR DC OUTPUT & DC OR DRY SWITCH CONTROL • True Break-Before-Make Solid State Relay • LED Indicators • Internal Snubber Network Provided • Opto-lsolated Input Circuits CRYDOM M O D EL N U M B ER S

j292

Abstract: aft23h200-4s2l
Contextual Info: Document Number: AFT23H200−4S2L Rev. 1, 5/2013 Freescale Semiconductor Technical Data RF Power LDMOS Transistor N−Channel Enhancement−Mode Lateral MOSFET AFT23H200−4S2LR6 This 45 watt asymmetrical Doherty RF power LDMOS transistor is designed for cellular base station applications covering the frequency range of

A114

Abstract: A115 AN1955 C101 JESD22 MRF6S23100H MRF6S23100HR3 MRF6S23100HSR3 Nippon capacitors
Contextual Info: Freescale Semiconductor Technical Data Document Number: MRF6S23100H Rev. 0, 8/2005 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs MRF6S23100HR3 MRF6S23100HSR3 Designed for 802.16 WiBro and dual mode applications with frequencies

j686

Abstract: FERRITE BEAD 1000 OHM 0805 Nippon capacitors
Contextual Info: Freescale Semiconductor Technical Data Document Number: MRF6S231100H Rev. 0, 8/2005 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs MRF6S23100HR3 MRF6S23100HSR3 Designed for 802.16 WiBro and dual mode applications with frequencies

NIPPON CAPACITORS

Contextual Info: Freescale Semiconductor Technical Data Document Number: MRF6P23190H Rev. 1, 5/2006 RF Power Field Effect Transistor N - Channel Enhancement - Mode Lateral MOSFET Designed for CDMA base station applications with frequencies from 2300 to 2400 MHz. Suitable for WiMAX, WiBro and multicarrier amplifier applications.

MRF8S23120HR3

Abstract: AN1955 C3225JB2A334KT j162 MRF8S23120H C5750X7R1H106KT
Contextual Info: Freescale Semiconductor Technical Data Document Number: MRF8S23120H Rev. 0, 11/2010 RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs MRF8S23120HR3 MRF8S23120HSR3 Designed for LTE base station applications with frequencies from 2300 to

NIPPON CAPACITORS

Contextual Info: Freescale Semiconductor Technical Data Document Number: MRF6P23190H Rev. 0, 10/2005 RF Power Field Effect Transistor N - Channel Enhancement - Mode Lateral MOSFET Designed for 802.16 WiBro and dual mode applications with frequencies from 2300 to 2400 MHz. Suitable for Class AB feedforward and predistortion

GSC356-HYB2500

Abstract: ATC600F1R0JT250XT atc600f100jt250xt J930 MRF8P23080HR3 ATC600F0R8JT250XT
Contextual Info: Freescale Semiconductor Technical Data Document Number: MRF8P23080H Rev. 1, 11/2010 RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs Designed for W-CDMA and LTE base station applications with frequencies from 2300 to 2620 MHz. Can be used in Class AB and Class C for all typical

GSC356-HYB2500

Abstract: GRM21BR71H105KA12 ATC600F100JT250XT MRF8P23080H J930 ATC600F5R6JT250XT J935 ATC600F180
Contextual Info: Freescale Semiconductor Technical Data Document Number: MRF8P23080H Rev. 0, 5/2010 RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs Designed for W-CDMA and LTE base station applications with frequencies from 2300 to 2400 MHz. Can be used in Class AB and Class C for all typical

MAX5881

Abstract: MAX19693 MAX19692 SLVS ST max19693 datasheet MAX19588 SLVS max2015 MAX1436 MAX19515
Contextual Info: High-Speed ADCs, DACs, & AFEs 11th Edition September 2008 Industry’s lowest power, dual-channel 10-bit, 130Msps ADC has superior dynamic performance Extensive feature set minimizes external component count The MAX19517 ADC is a member of Maxim’s pin-compatible family of ultra-low-power, dual-channel

op amplifiers single-ended to differential converter

Abstract: AD8275 AD8138 AD8139 ADA4927 ADA4927-1 ADA4937-1 ADA4938-1 ADA4939-1 differential to single-ended conversion
Contextual Info: Driver Amplifiers For Analog-To-Digital Converters Don Tuite Analog/Power Editor FREQUENTLY ASKED QUESTIONS ED Online 20791 What amplifiers are used to drive analog-to-digital converters ADCs ? Possibilities include single-ended and differential inputs and outputs,

LT5579

Abstract: LT5554 LT5578 LT5570 LT5557
Contextual Info: LT5579 1.5GHz to 3.8GHz High Linearity Upconverting Mixer FEATURES n n n n n n n n n DESCRIPTION The LT 5579 mixer is a high performance upconverting mixer optimized for frequencies in the 1.5GHz to 3.8GHz range. The single-ended LO input and RF output ports

AD-MSDPDA900-EVB

Abstract: LTE baseband AD8375 xilinx digital Pre-distortion ADF4350 AD-MSDPDX2150-EVB ADL5375 GSM 900 modulation matlab AD5611 AD9516
Contextual Info: Mixed Signal Digital Predistortion Evaluation Platform AD-MSDPD-EVB High performance RF and mixed signal transmit and observation signal chains seamlessly integrated on one board Full implementation of 16-bit I/Q data to 18 dBm RF output with 12 dB of fine analog gain control and 122.88 MHz of

C8051F921

Abstract: C8051F912 AN358 Silabs C8051F920 c8051f930_lib "embedded systems" firmware AN358 design rules C8051*930 CRYSTAL 20 mhZ
Contextual Info: AN358 O PTIMIZING L OW - P OWER O PERATION OF T H E C8051F9 X X Relevant Devices This application note applies to the following devices: C8051F930, C8051F931, C8051F920, C8051F921, C8051F912, C8051F911, C8051F902, C8051F901, C8051F990, C8051F991, C8051F996, C8051F997, C8051F980, C8051F981, C8051F982, C8051F983,

Contextual Info: Freescale Semiconductor Technical Data Document Number: MRF6VP2600H Rev. 5.1, 7/2010 RF Power Field Effect Transistor N-Channel Enhancement-Mode Lateral MOSFET Designed primarily for wideband applications with frequencies up to 500 MHz. Device is unmatched and is suitable for use in broadcast applications.

Contextual Info: DESCRIPTION T h e M L -8 9 1 and M L -8 9 1 R are three electrode tubes design ed specifically for use as m odulators, am plifiers or oscillators in rad io tran sm ittin g service. T h e cathode o f each type is a pure-tungsten filam ent. T h e M L -8 9 1 has a watercooled anode capable o f d issip a tin g 6 k W w ith m oderate

Contextual Info: SMT POWER INDUCTORS Shielded Drum Core - P1174 Series Height: 2.8mm Max Footprint: 6.7mm x 4.5mm Max Current Rating: up to 3.0A Inductance Range: 1µH to 5000µH Electrical Specifications @ 25°C — Operating Temperature -40°C to +130°C Inductance @ 0ADC

POWER MOSFET Rise Time 1000V NS

Abstract: MOSFET 1000v 30a inverter circuit 200v to 100v mosfet 10a 500v mosfet 400 V 10A OM9027SP1 OM9028SP1 OM9029SP1 OM9030SP1 OM9Q27SP1
Contextual Info: OM9027SP1 OM9029SP1 OM9Q28SP1 OM9030SP1 UNCOMMITTED POWER MOSFET AND HIGH SPEED RECTIFIER IN 6-PIN PACKAGE 100V Thru 1000V, 4A To 30A Power MOSFET And High Speed Rectifier In One Package FEATURES • • • • • M O S F E T And Common Cathode Rectifier In O ne Package