ADQ-32W
Abstract: No abstract text available
Text: 2 Way-90° Power Splitter/Combiner ADQ-32W+ Typical Performance Data FREQUENCY TOTAL LOSS1 AMPLITUDE UNBALANCE ISOLATION PHASE UNBALANCE FREQUENCY dB (dB) (dB) (deg.) (MHz) (MHz) S-1 S-2 1-2 104.0 106.0 108.0 110.0 115.0 120.0 140.0 160.0 180.0 200.0 220.0
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Way-90°
ADQ-32W+
ADQ-32W
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ADQ-32W
Abstract: No abstract text available
Text: 2 Way-0° Power Splitter/Combiner ADQ-32W+ Typical Performance Data TEST CONDITIONS: INPUT POWER = 0dBm @Temperature = +25°C FREQ. INSERTION LOSS dB (MHz) 50 60 70 80 90 95 100 104 105 110 115 120 125 130 135 140 145 150 160 170 180 190 200 210 220 230
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ADQ-32W+
ADQ-32W
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384298
Abstract: No abstract text available
Text: Surface Mount Power Splitter/Combiner 2 Way-90° 50Ω 104 to 340 MHz Maximum Ratings Operating Temperature Features -40°C to 85°C Storage Temperature ADQ-32W+ -55°C to 100°C Power Input as a splitter 0.5W max. Permanent damage may occur if any of these limits are exceeded.
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Way-90°
ADQ-32W+
CJ725
M127604
ED-12470/1
384298
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Untitled
Abstract: No abstract text available
Text: Surface Mount Power Splitter/Combiner 2 Way-90° 50Ω 104 to 340 MHz Maximum Ratings Operating Temperature Storage Temperature ADQ-32W+ Features -40°C to 85°C -55°C to 100°C Power Input as a splitter 0.5W max. • wideband, 104 to 340 MHz • good isolation, 20 dB typ.
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Way-90°
ADQ-32W+
CJ725
2002/95/EC)
PL-063)
M112755
ED-12470/1
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Untitled
Abstract: No abstract text available
Text: Surface Mount Power Splitter/Combiner 2 Way-90° 50Ω 104 to 340 MHz Maximum Ratings Features Operating Temperature Storage Temperature ADQ-32W+ -40°C to 85°C -55°C to 100°C Power Input as a splitter 0.5W max. Pin Connections SUMPORT 1 PORT 1 (0°)
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Way-90°
ADQ-32W+
CJ725
2002/95/EC)
PL-063)
M112755
ED-12470/1
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ADQ-32W
Abstract: CJ725
Text: Surface Mount Power Splitter/Combiner 2 Way-90° 50Ω 104 to 340 MHz Maximum Ratings Operating Temperature Storage Temperature ADQ-32W+ Features -40°C to 85°C -55°C to 100°C Power Input as a splitter 0.5W max. Permanent damage may occur if any of these limits are exceeded.
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Way-90°
ADQ-32W+
CJ725
2002/95/EC)
M127604
ED-12470/1
ADQ-32W
CJ725
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ADQ-32W
Abstract: CJ725 ADQ-32
Text: Surface Mount Power Splitter/Combiner 2 Way-90° 50Ω 104 to 340 MHz Maximum Ratings Operating Temperature Storage Temperature ADQ-32W+ Features -40°C to 85°C -55°C to 100°C Power Input as a splitter 0.5W max. Permanent damage may occur if any of these limits are exceeded.
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Way-90°
ADQ-32W+
CJ725
2002/95/EC)
M112755
ED-12470/1
ADQ-32W
CJ725
ADQ-32
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ADQ-32W
Abstract: No abstract text available
Text: 2 Way-0° Power Splitter/Combiner ADQ-32W+ Typical Performance Curves Insertion Loss Insertion Loss S-1 vs. TEMPERATURE 0.0 1 0.5 2 1.0 @ -40°C @ +25°C Insertion Loss dB Insertion Loss (dB) @ +85°C 3 4 5 6 7 1.5 2.0 2.5 3.0 3.5 Insertion Loss S-1 8 4.0
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ADQ-32W+
ADQ-32W
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Untitled
Abstract: No abstract text available
Text: Surface Mount Power Splitter/Combiner 2 Way-90° 50Ω 104 to 340 MHz Maximum Ratings Operating Temperature Features -40°C to 85°C Storage Temperature ADQ-32W+ -55°C to 100°C Power Input as a splitter 0.5W max. .
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Way-90Â
ADQ-32W+
CJ725
M127604
ED-12470/1
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ADQ-32W
Abstract: No abstract text available
Text: 2 Way-90° Power Splitter/Combiner ADQ-32W+ Typical Performance Curves Isolation Total Loss 34 5.0 32 4.5 Isolation dB Total Loss (dB) 30 4.0 3.5 3.0 2.5 28 26 24 22 20 2.0 Total Loss S-1 1.5 Total Loss S-2 1.0 100 120 140 160 180 200 220 240 260 280 300
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ADQ-32W+
ADQ-32W
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W958D6DBC
Abstract: No abstract text available
Text: W958D6DB 256Mb Async./Burst/Sync./A/D MUX 1. GENERAL DESCRIPTION Winbond x16 ADMUX products are high-speed, CMOS pseudo-static random access memory developed for lowpower, portable applications. The device has a DRAM core organized. These devices are a variation of the industrystandard Flash control interface, with a multiplexed address/data bus. The multiplexed address and data functionality
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W958D6DB
256Mb
A01-003
W958D6DBC
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Untitled
Abstract: No abstract text available
Text: W957D6HB 128Mb Async./Burst/Sync./A/D MUX 1. GENERAL DESCRIPTION Winbond x16 ADMUX products are high-speed, CMOS pseudo-static random access memory developed for lowpower, portable applications. The device has a DRAM core organized. These devices are a variation of the industrystandard Flash control interface, with a multiplexed address/data bus. The multiplexed address and data functionality
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W957D6HB
128Mb
A01-004
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012F
Abstract: reset nand flash 804aH
Text: MuxOneNAND512 KFM1216Q2M FLASH MEMORY MuxOneNAND SPECIFICATION Product Part No. VCC(core & IO) PKG MuxOneNAND512 KFM1216Q2M 1.8V(1.7V~1.95V) 48FBGA(LF) Version: Ver. 1.0 Date: August 4th, 2004 1 MuxOneNAND512(KFM1216Q2M) FLASH MEMORY Document Title MuxOneNAND
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MuxOneNAND512
KFM1216Q2M)
KFM1216Q2M
48FBGA
512Mb
012F
reset nand flash
804aH
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Samsung oneNand Mux
Abstract: samsung 1Gb nand flash SAMSUNG 256Mb NAND Flash Qualification Report KFM1216Q2M 48FBGA 8017h 2112b 1001Ah 803FH samsung 2GB Nand flash 121 pins
Text: MuxOneNAND512 KFM1216Q2M FLASH MEMORY MuxOneNAND SPECIFICATION Product Part No. VCC(core & IO) PKG MuxOneNAND512 KFM1216Q2M 1.8V(1.7V~1.95V) 48FBGA(LF) Version: Ver. 1.3 Date: June 15th, 2005 1 MuxOneNAND512(KFM1216Q2M) FLASH MEMORY INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS,
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MuxOneNAND512
KFM1216Q2M)
MuxOneNAND512
KFM1216Q2M
48FBGA
512Mb
Samsung oneNand Mux
samsung 1Gb nand flash
SAMSUNG 256Mb NAND Flash Qualification Report
KFM1216Q2M
8017h
2112b
1001Ah
803FH
samsung 2GB Nand flash 121 pins
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SAMSUNG 256Mb NAND Flash Qualification Report
Abstract: No abstract text available
Text: MuxOneNAND256 KFM5616Q1M FLASH MEMORY MuxOneNAND SPECIFICATION Product MuxOneNAND256 Part No. KFM5616Q1M VCC(core & IO) PKG 1.8V(1.7V~1.95V) 63FBGA(LF) Version: Ver. 1.1 Date: June 15th, 2005 1 MuxOneNAND256(KFM5616Q1M) FLASH MEMORY INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS,
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MuxOneNAND256
KFM5616Q1M)
KFM5616Q1M
63FBGA
80x11
SAMSUNG 256Mb NAND Flash Qualification Report
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F24d
Abstract: 63FBGA SAMSUNG 256Mb NAND Flash Qualification Reliability MUXOneNAND
Text: MuxOneNAND256 KFM5616Q1M FLASH MEMORY MuxOneNAND SPECIFICATION Product Part No. VCC(core & IO) PKG MuxOneNAND256 KFM5616Q1M 1.8V(1.7V~1.95V) 63FBGA(LF) Version: Ver. 1.1 Date: June 15th, 2005 1 MuxOneNAND256(KFM5616Q1M) FLASH MEMORY INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS,
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MuxOneNAND256
KFM5616Q1M)
MuxOneNAND256
KFM5616Q1M
63FBGA
80x11
F24d
SAMSUNG 256Mb NAND Flash Qualification Reliability
MUXOneNAND
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Untitled
Abstract: No abstract text available
Text: Numonyx StrataFlash Cellular Memory M18 Datasheet Product Features High-Performance Read, Program and Erase — 96 ns initial read access — 108 MHz with zero wait-state synchronous burst reads: 7 ns clock-to-data output — 133 MHz with zero wait-state synchronous
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512-Mbit
16-bit
256-Kbyte
x32SH
x16SB
x16/x32
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PF38F4060M
Abstract: PF38F4060 Numonyx StrataFlash M18 2N 8904 PF38F4060M0Y0B BU 3150 PF48F6000M0Y0BE Numonyx admux PF48F4000M0Y0CE W250 A1A
Text: Numonyx StrataFlash Cellular Memory M18 Datasheet Product Features High-Performance Read, Program and Erase — 96 ns initial read access — 108 MHz with zero wait-state synchronous burst reads: 7 ns clock-to-data output — 133 MHz with zero wait-state synchronous
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512-Mbit
16-bit
256-Kbyte
x32SH
x16SB
x16/x32
PF38F4060M
PF38F4060
Numonyx StrataFlash M18
2N 8904
PF38F4060M0Y0B
BU 3150
PF48F6000M0Y0BE
Numonyx admux
PF48F4000M0Y0CE
W250 A1A
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nokia 1100 LCD
Abstract: Nokia lcd 1100 circuit diagram of nokia 101
Text: Preliminary MuxOneNAND256 KFM5616Q1M FLASH MEMORY MuxOneNAND SPECIFICATION Product MuxOneNAND256 Part No. KFM5616Q1M VCC(core & IO) PKG 1.8V(1.7V~1.95V) 63FBGA(LF) Version: Ver. 1.1 Date: January 26th, 2005 1 Preliminary MuxOneNAND256(KFM5616Q1M) FLASH MEMORY
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MuxOneNAND256
KFM5616Q1M)
KFM5616Q1M
63FBGA
80x11
nokia 1100 LCD
Nokia lcd 1100
circuit diagram of nokia 101
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Untitled
Abstract: No abstract text available
Text: MuxOneNAND512 KFM1216Q2B-DxBx FLASH MEMORY KFM1216Q2B 512Mb MuxOneNAND B-die INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE. NOTHING IN THIS DOCUMENT SHALL BE CONSTRUED AS GRANTING ANY LICENSE,
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MuxOneNAND512
KFM1216Q2B-DxBx)
KFM1216Q2B
512Mb
80x11
KFM1216Q2B)
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KFM1216Q2B
Abstract: MUXOneNAND 63FBGA
Text: MuxOneNAND512 KFM1216Q2B-xEBx FLASH MEMORY KFM1216Q2B 512Mb MuxOneNAND B-die INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE. NOTHING IN THIS DOCUMENT SHALL BE CONSTRUED AS GRANTING ANY LICENSE,
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MuxOneNAND512
KFM1216Q2B-xEBx)
KFM1216Q2B
512Mb
80x11
KFM1216Q2B)
KFG1216Q2B)
67ball
KFM1216Q2B
MUXOneNAND
63FBGA
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2048B
Abstract: 63FBGA KFM1216Q2B
Text: MuxOneNAND512 KFM1216Q2B-DxBx FLASH MEMORY KFM1216Q2B 512Mb MuxOneNAND B-die INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE. NOTHING IN THIS DOCUMENT SHALL BE CONSTRUED AS GRANTING ANY LICENSE,
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MuxOneNAND512
KFM1216Q2B-DxBx)
KFM1216Q2B
512Mb
80x11
KFM1216Q2B)
2048B
63FBGA
KFM1216Q2B
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KFM1G16Q2C
Abstract: 8023-h b*137 63FBGA
Text: MuxOneNAND1Gb KFM1G16Q2C-xEBx FLASH MEMORY KFM1G16Q2C 1Gb MuxOneNAND C-die INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE. NOTHING IN THIS DOCUMENT SHALL BE CONSTRUED AS GRANTING ANY LICENSE,
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KFM1G16Q2C-xEBx)
KFM1G16Q2C
80x11
KFM1G16Q2C)
KFM1G16Q2C
8023-h
b*137
63FBGA
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NAND Flash controller ecc
Abstract: KFM1G16Q2C NANDFlashcontrollerecc Samsung oneNand Mux mas 1024b spare parts for mobile 63FBGA
Text: MuxOneNAND1Gb KFM1G16Q2C-xEBx FLASH MEMORY KFM1G16Q2C 1Gb MuxOneNAND C-die INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE. NOTHING IN THIS DOCUMENT SHALL BE CONSTRUED AS GRANTING ANY LICENSE,
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KFM1G16Q2C-xEBx)
KFM1G16Q2C
80x11
KFM1G16Q2C)
NAND Flash controller ecc
KFM1G16Q2C
NANDFlashcontrollerecc
Samsung oneNand Mux
mas 1024b
spare parts for mobile
63FBGA
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