AEROFLEX GAN POWER AMPLIFIER Search Results

GaN amplifier

Abstract: Aeroflex GaN power amplifier GaN Amplifier 18GHz PA020180-3922 rf power amplifier with s parameters
Contextual Info: Broadband Standard Product PA020180-3922 GaN High Power Amplifier Module Broadband Power 2GHz to 18GHz 8Watts CW March 11, 2009 Preliminary www.aeroflex.com/bband DESCRIPTION FEATURES Our new industry leading broadband power amplifier designs provide performance without sacrificing output power. The ultra wideband performance

SMA 65/125

Abstract: sub-d 50 pin sub-d 37 pin Aeroflex GaN power amplifier
Contextual Info: Broadband Standard Product PA022023-38 GaN High Efficiency Power Amplifier 6 Watts from 2.2GHz to 2.3GHz February 9, 2009 www.aeroflex.com/bband DESCRIPTION FEATURES The PA022023-38 is a Narrow band high efficiency power amplifier and is ideal for use as a stable IF Amplifier, wireless, point-to-point

Aeroflex GaN power amplifier

Abstract: tms 980 GaN amplifier PA001005-28
Contextual Info: Broadband Standard Product PA001005-28 GaN Medium Power Amplifier 100MHz to 500MHz February 9, 2009 www.aeroflex.com/bband DESCRIPTION FEATURES The PA001005-28 is a power amplifier in a compact package and is ideal for use as a stable gain block, IF Amplifier or medium Power

GaN amplifier

Abstract: Aeroflex GaN power amplifier PA001040-32
Contextual Info: Broadband Standard Product PA001040-32 GaN High Efficiency Driver Amplifier Broadband Power 100MHz to 4GHz February 9, 2009 www.aeroflex.com/bband DESCRIPTION FEATURES The PA001040-32 is a broadband high efficiency driver amplifier in a compact package and is ideal for use as a stable gain block, IF

CMPA0060002F

Abstract: CMPA0060002F-TB CMPA2560002F
Contextual Info: CMPA0060002F 2 W, 20 MHz - 6000 MHz, GaN MMIC Power Amplifier Cree’s CMPA0060002F is a gallium nitride GaN High Electron Mobility Transistor (HEMT) based monolithic microwave integrated circuit (MMIC). GaN has superior properties compared to silicon or gallium

Contextual Info: CMPA0060002F 2 W, 20 MHz - 6000 MHz, GaN MMIC Power Amplifier Cree’s CMPA0060002F is a gallium nitride GaN High Electron Mobility Transistor (HEMT) based monolithic microwave integrated circuit (MMIC). GaN has superior properties compared to silicon or gallium

CMPA0060002F

Abstract: cmpa0060002f applications note GaN amplifier CMPA0060002F Tecdia Cree Microwave CMPA0060002F-TB CMPA2560002F Aeroflex GaN power amplifier
Contextual Info: CMPA0060002F 2 W, 20 MHz - 6000 MHz, GaN MMIC Power Amplifier Cree’s CMPA0060002F is a gallium nitride GaN High Electron Mobility Transistor (HEMT) based monolithic microwave integrated circuit (MMIC). GaN has superior properties compared to silicon or gallium

TBT-06M20

Abstract: CMPA0060002F SMF3-12 aeroflex SMF3-12
Contextual Info: CMPA0060002F 2 W, 20 MHz - 6000 MHz, GaN MMIC Power Amplifier Cree’s CMPA0060002F is a gallium nitride GaN High Electron Mobility Transistor (HEMT) based monolithic microwave integrated circuit (MMIC). GaN has superior properties compared to silicon or gallium

CMPA0060002F

Abstract: Tecdia CMPA0060002F-TB Cree Microwave CMPA2560002F SMF3-12 RF-35-0100-CH
Contextual Info: PRELIMINARY CMPA0060002F 2 W, 20 MHz - 6000 MHz, GaN MMIC Power Amplifier Cree’s CMPA0060002F is a gallium nitride GaN High Electron Mobility Transistor (HEMT) based monolithic microwave integrated circuit (MMIC). GaN has superior properties compared to silicon or gallium

CMPA0060002F

Abstract: CMPA0060002F-TB CMPA2560002F JESD22
Contextual Info: CMPA0060002F 2 W, 20 MHz - 6000 MHz, GaN MMIC Power Amplifier Cree’s CMPA0060002F is a gallium nitride GaN High Electron Mobility Transistor (HEMT) based monolithic microwave integrated circuit (MMIC). GaN has superior properties compared to silicon or gallium

westcode scr

Abstract: toko filters westcode diodes TOKO INDUCTORS tyco igbt mitsubishi sic MOSFET KU SERIES CHEMICON capacitor nujira NATIONAL IGBT welding transformer SCR
Contextual Info: 90461431 RF, Microwave Components Your Global Source for RF, Microwave and Power Conversion Products Our valued suppliers Click on the supplier name below to visit their storefront on www.rell.com Richardson Electronics’ RF, Wireless & Power Division designs and distributes

Contextual Info: The State of RF/microwave Switch Devices Pat Hindle, Microwave Journal Editor RF and microwave switches are used extensively in wireless systems for signal routing finding wide use in switching signals from antennas to the transmit and receive chains. They are one of

EPC8004

Contextual Info: APPLICATION NOTE: AN015 eGaN FETs for Multi-MHz Applications Introducing a Family of eGaN FETs for Multi-Megahertz Hard Switching Applications EFFICIENT POWER CONVERSION Michael de Rooij, PhD, Johan Strydom, PhD The ultra high speed switching capabilities of gallium nitride transistors have now been

Sony CXA1191M

Abstract: philips ecg master replacement guide FZK101 YD 803 SGS FZK 101 Siemens CMC 707 am radio receiver philips ecg semiconductors master replacement guide CXA1191M ym2612 ecg semiconductors master replacement guide
Contextual Info: Untitled HAM RADIO FILE - Various pinouts saved from the Chipdir 2010 http://www.chipdir.org/ 0512d -0512d +-\/-+ 1 -|5V in gnd in|- 24 2 -|5V in gnd in|- 23 3 -|5V in gnd in|- 22