AF 830 05 Search Results

Contextual Info: SRAF820 - SRAF8150 Isolated 8.0 AMPS. Schottky Barrier Rectifiers ITO-220AC .185 4.7 .173(4.4) .406(10.3) .390(9.90) .124(3.16) .118(3.00) .134(3.4)DIA .113(3.0)DIA .112(2.85) .100(2.55) .272(6.9) .248(6.3) Features .606(15.5) .583(14.8) Isolated Plastic package.

B029A

Abstract: UN039
Contextual Info: Light Emittihg Diodes • Laser Modules ■ infrared Light Emitting Diodes incl. visible (for Fiber, Control) Applica­ tions Package If Type No. Vf max. AL typ. •L a s e r Module for Optical Communication Q tr.tl typ (ns) Type No. Package No. LN7301M005

SRAF820

Abstract: SRAF860
Contextual Info: SRAF820 THRU SRAF860 Isolation 8.0 AMPS. Schottky Barrier Rectifiers Voltage Range 20 to 100 Volts Current 8.0 Amperes ITO-220AC Features .185 4.7 .173(4.4) Low forward voltage drop High current capability High reliability High surge current capability .406(10.3)

MS-027

Abstract: 1404s JEDEC Jc-11 11321 AA
Contextual Info: b2 -H (b2) H H e/2 /8 \ 050 MAX-1 \ / I (b) EVEN L E A D S / S I D E .045 .035 050 MAX-i \ / T (b) - . (DATUM PLANE A) I .045 .035 ODD L E A D S / S I D E . (DATUM PLANE A) VIEW B JEDEC SOLID STATE P R O D U C T OUTLINES THIS STANDARD OUTLINE HAS BEEN PREPARED BY THE JEDEC JC-11

APT5517AFN

Abstract: APT6017AFN
Contextual Info: ADVANCED POWER TECHNOLOGY M'IE D • 0 5 5 7 ^ 0 ^ ClOOOS^e « A V P ADVANCED POWER - T 3 P I - i s TECHNOLOGY N F-Pack AF ) 7bT ^ A P T 6017A F N A P T 5517A F N 6 0 0 V 3 9 .0A 0 .1 7 r t 5 5 0 V 3 9 .0 A 0 .1 7 iß POWER MOS IV N - C H A N N E L EN H AN CEM EN T MODE HIGH VOLTAGE POW ER MOSFETÎj

rca 036

Abstract: TO18 package LM607 C30948E RCA Solid State
Contextual Info: R C A IDE D • VMoHbVS 0000040 7 INC/ ELECTRO OPTICS nc/i Solid State Detectors Electro Optics and Devices Developmental TvDe T ' tfr'~5r/ C30948E Photodiode Silicon Avalanche Photodiode Having Very High Modulation Capability ■ High Quantum Efficiency 85% typical at 830 and 900 nm

HX 830

Abstract: MI51TA-2 MI51TA-3
Contextual Info: MICRO IVllSllA-^ MI51TA-3 INFRARED EMITTING DIODE 04.98 0.196 DESCRIPTION 1.0 1.3 '(0.05) (0 .0 4 f MI51TA-2 & MI51TA-3 is GaAlAs infrared emitting diode molded in T -l 3/4 standard 5mm diam eter clear transparent lens. 87 (0.34) 1.0 (0.04) “ (0.04) af* X Ü ~ —

valox 553

Abstract: Ni250 PT-1-24-01-40 T-1S6-17-X-2
Contextual Info: r e v . I af NO. O F P O S. X .1 0 0 4 [2.54 ] 1 . 3 0 0 REF. [7.62 ] NO. OF POS. X .100 + .200 REF. [2.54-] [5. OB] r ONE PL A C E DEC IM ALS ± .1 [2.5] TWO PLAC E DEC IM ALS ± .01 [.25] TOLERANCES ARE: TH REE PL A C E D EC IM ALS ± .005[.13] AN GLES FOUR PLA C E D EC IM ALS ± .0 0 2 0 [.050 ]

Contextual Info: 1 3 4 THIS DRAWING 7 IS C O P Y R IG H T U N P U B L IS H E D . RELEASED BY 19 AMP IN COR POR ATE D. FOR ALL PUBLICATION R IG H T S 2 ,19 LOC R ES ER V ED . D IS T AF 50 D 32 CONTIN0005 STRIP LOCATED 8.38+0.08 SLOT TERN I NATES COPPER 3 ON AFTER RANGE; N05T

Contextual Info: 4 THIS DRAWING 0 IS C O P Y R IG H T 3 U N P U B L IS H E D . 19 RELEASED BY AMP IN COR POR ATE D. FOR ALL PUBLICATION R IG H T S 2 ,19 LOC R ES ER V ED . D IS T AF 50 DESCRIPTION L TR REV I D E N T I F I C A T I O N NUHBER F OR N A GN E T WI R E RANGE 40

Contextual Info: 4 THIS DRAWING 7 IS 3 U N P U B L IS H E D . C O P Y R IG H T RELEASED BY 19 AMP IN COR POR ATE D. FOR PUBLICATION ALL R IG H T S 2 ,19 LOC R ES ER V ED . D IS T AF 50 DESCRIPTION L TR REV I D E N T I F I C A T I O N NUHBER FOR N A G N E T WI R E RANGE D

cq 949

Abstract: fujitsu power amplifier GHz fujitsu phemt FUJITSU RF 053
Contextual Info: FMM5802X 27.5-31.5GHz Power Amplifier MMIC FEATURES • High Output Power: P ^ b = 25.5dBm Typ. • High Gain: G ^ b = 9dB (Typ.) • High PAE: riadd = 20% (Typ.) • Wide Frequency Band: 27.5-31.5 GHz

Brown Boveri itl 12-1

Abstract: ftl12-1 TRIODE itl redresseur
Contextual Info: Lu ftg ekü h lte Sendetriode fü r In du strie und N achrichtentechnik A ir-C o oled P ow er Trio de fo r In d u stry and C om m unication Triode à refroidissem en t par a ir pour l'industrie e t les télécom m unications Hauptdaten Q u ick Reference D ata

Contextual Info: ADVANCED POWER TECHNOLOGY MREJ> □asTTOT ooQosaa 231 m a v p A d vanc ed P o w e r T-SVtS T e c h n o lo g y 9 D 2 APT5011AFN 500V 49.0A a i l APT4511AFN 450V 49.0A 0.11 O S(2) POWER MOS IV N - CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MQSFCT# All A"

SML4511AFN

Abstract: LE17 SML5011AFN
Contextual Info: SEMELAB PLC bGE » • 0133107 00GGfl72 7=i3 ■■ S MLB MOS POWER "T-3a-\s INI = ^ = SEME LAB SML5011AFN SML4511AFN A 500V 49.0A 0.11 £2 450V 49.0A 0.11 £2 N - CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS MAXIMUM RATINGS All Ratings: Tc = 25°C unless otherwise specified.

LT 220 diode

Contextual Info: ADVANCED POWER TECHNOLOGY MIE D • QESTIOS GGOOSIS 7bT M A V P AD VAN CED P O W E R .[ t - 3pi-i s Te c h n o lo g y A P T 6017AFN A P T5 5 1 7 AFN 600V 3 9 .0A 0.17 ijj 550V 3 9 .0 A 0.17 ijj POWER MQS IV N- CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFET%

APT4511AFN

Abstract: APT5011AFN SD diode
Contextual Info: ADVANCED POWER T E CH NO LO GY □ 2 S 7 T 0 cî 000058a MIE D 231 M A V P A dvanced R o w er Techno lo g y APT5011AFN 500V 49.0A a i l APT4511AFN 450V 49.0A 0.11 POWER MOS IV N - CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFET# i i avi b i i i i i n a

CX120

Contextual Info: THE CONNOR-WINFIELD CORP. 2111 COMPREHENSIVE DRIVE. AURORA, IL 60505. FAX 630 851-5040. PHONE (630) 851-4722. HTTP://WWW.CONWIN.COM PRODUCT D ATA SHEET CRYSTAL CONTROLLED OSCILLATORS CW 0647 OFA3BB2AA 20MHZ SURFACE MOUNT 3.3V LVCMOS STRATUM 3 OCXO ABSOLUTE M AXIMUM RATING S

BCX70

Abstract: BCW60 BCX70RH BCX70RG Ttt95 BCW60R BCW60RA BCW60A BCW60B BCW60C
Contextual Info: ITT S E M I C O N D / I N T E R M E T A L L SDE D 4fcrfl2711 DD 05 S7Ô ISI BCW60, BCX70 NPN S ilico n Ep itaxial P lan ar T ran sis to rs for switching and AF amplifier applications. “ I— I— !" T£ Especially suited for automatic insertion in thick- and thin-fitm

Contextual Info: T C 7 4 H C 4 3 5 1 A K / A l- II TC74HC4352AP/AF TC74HC4353AP/AF T C 7 4H C 4351A P /A F T C 7 4H C 4352A P /A F T C 74H C 4353A P /A F 8 - C H A N N E L A N A L O G M U L T I P L E X E R / D E M U L T I P L E X E R WITH AD DRESS L A T C H D U A L 4 - C H A N N E L A N A L O G M U L T I P L E X E R / D E M U L T I P L E X E R W IT H AD DRESS L A T C H

3S035T-1

Abstract: tungsram 3S035T-1 12QR205 5Q105 4S040T-1 grg 250 5S045T SRS 4451 tungsram RS 329g
Contextual Info: TUNGSRAM 1> r SENDEROHREN SENDETRIODEN SENDETETRODEN SENDEPENTODEN •• GLEICHRICHTERRÖHREN HOCHSPANNUNGS­ GLEICHRICHTERRÖHREN THYRATRONS SENDITRONS ' • . -• MIKROWEILENRÖHREN REFLEXKLYSTRONS WANDERFELDRÖHREN T Y P E N V E R Z E IC H N IS TYP SEITE

ms3476 backshell

Contextual Info: T h is m i li t a r y stan dard is approved fo r use by a l l Departments and Agencies o f the Department o f D efense. S e le c t io n fo r a l l new e n g in e e rin g and design a p p lic a t io n s and f o r r e p e t i t iv e use s h a ll be made from t h is document when a p p lic a b le .

V23021

Abstract: SKiiP 81 AC 12 i t SKiiP 81 AC 12 i t 1 B12-XH-A
Contextual Info: s e MIKRO n V drm Irms for continuous operation, Tamb = 35 °C mounted V rrm on heatsink P16/260 F with axial fan S K F 16B-230-01 V rms V V 3 x 325 A 3 x 445 A 3 x 520 A SKiiP SKiiP SKiiP SKiiP W3C Thyristor 3~AC Switch recom. R C snubber R/Q C/|aF 23021

Contextual Info: 001 SDC-14600/05 ILC DATA DEVICE CORPORATION _ _ TWO CHANNEL 14- AND 16-BIT TRACKING S/D CONVERTERS FEATURES DESCRIPTION Fixed 14- or 16-Bit Resolution The SDC-14600/05 Series are small low cost dual synchro- or resolver-todigital converters. The SDC-14600